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OM130STC
RADIATION HARDENED POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE N-CHANNEL
100V, 10 Amp, N-Channel, Radiation Hardened
Power MOSFET In A Hermetic Metal Package
FEATURES
• Rated As Radiation Hard
• Avalanche Energy Rated
• Isolated Hermetic Package
• Low R
• High Switching Speeds
• Screened to TX, TXV And S Levels
DESCRIPTION
This N-Channel Power MOSFET product is in a hermetic package and features the
latest radiation hard power semiconductor. This semiconductor die is processed to
achieve hardened characteristics. Total dose hardness is available at 100K and
1000K rads with neutron hardness at 1E14 N/CM2. Dose rate hardness, without
current limiting, is to rates of 1E9 rads/sec, and with current limiting 2E12 rads/sec.
The heavy ion survival rate, from a single event drain burn out, is a linear energy
transfer (LET) of 35 at 80 Volts.
DS(on)
4 11 R0
ABSOLUTE MAXIMUM RATINGS T
Drain Source Voltage, VDS...............................................100 V
Drain Gate Voltage (RGS= 20KW), V
Continuous Drain Current, ID............................................10.2 A
Continuous Drain Current, ID @ 100°C ....................................6.4 A
Pulsed Drain Current, I
Max. Power Dissipation, PD..............................................70 W
Max. Power Dissipation, PD @ 100°C......................................32 W
Linear Derating Factor............................................... .51W/°C
Operating Temperature, TJ ...................................-55°C TO +150°C
Storage Temperature, T
Lead Temperature - 1/16” from case for 10 sec ............................300°C
................................................41 A
DM
....................................-55°C TO +175°C
stg
RAD HARDNESS RATING T
CHARACTERISTIC INITIAL 10K 100K 1MEG
BV
R
DSS
DS(on)
V
GS
100V 100V 100V 95V
.20W .20W .20W .28W
2.0 - 4.0V 2.0 - 4.0V 2.0 - 4.0V 1.5 - 4.5V
3.1 - 13
..................................100 V
DGR
= 25°C
C
= 25°C
C
POST RADIATION - RADS
3.1
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OM130STC
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
G
D
S
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
3.1
ELECTRICAL CHARACTERISTICS: (T
= 25°C unless otherwise noted)
C
STATIC P/N OM130STC (100V)
Parameter Min. Typ. Max. Units Test Conditions
BV
Drain-Source Breakdown
DSS
Voltage I
V
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mA
GS(th)
Gate-Body Leakage ± 100 nA VGS= ± 20 V
I
GSS
I
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0
DSS
Current
I
On-State Drain Current
D(on)
R
Static Drain-Source On-State
DS(on)
Resistance
R
Static Drain-Source On-State
DS(on)
Resistance
1
1
1
100 V
0.2 1.0 mA
10.2 A VDS 2 V
0.20 V
0.40
DYNAMIC
gfsForward Transductance
C
Input Capacitance 680 pF VGS= 0
iss
C
Output Capacitance 340 pF VDS= 25 V
oss
C
Reverse Transfer Capacitance 115 pF f = 1 MHz
rss
t
Turn-On Delay Time 25 ns VDD= 50 V, ID@ 6 A
d(on)
t
Rise Time 65 ns Rg= 12 W, VDS= 10 V
r
t
Turn-Off Delay Time 35 ns
d(off)
t
Fall Time 38 ns
f
1
4.0 S(W) VDS 2 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current
S
(Body Diode) symbol showing
I
SM
Source Current
1
(Body Diode) Junction rectifier.
VSDDiode Forward Voltage
V
Diode Forward Voltage
SD
t
Reverse Recovery Time
rr
1
1
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
- 12 A
- 56 A
- 2.5 V
- 2.5 V TC= 25 C, IS= -12 A, VGS= 0
250 ns
VGS= 0,
= 250 mA
D
V
= 0.8 Max. Rat., VGS= 0,
DS
T
= 125° C
C
GS
, VGS= 10 V
DS(on)
= 10 V, ID= 6 A
VGS= 10 V, ID= 6 A,,
TC= 125 C
(W)
Modified MOSPOWER
the integral P-N
T
C
, ID= 6 A
DS(on)
= 25 C, IS= -12 A, VGS= 0
TJ= 25 C, IF= -12A,
dl
/ds = 100 A/ms
F
MECHANICAL OUTLINE ORDERING INFORMATION
Omnirel Part Number
OM130S TC DS
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
123
Substrate Type Screening Leve
S = Insulated Standard M = Commercial
N = Non-Isolated T = TX
Package - TO-257AA
Feedthrough construction ceramic Radiation Level - rads
S = Space
D = 10K
R = 100K
H = 1Meg
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