Datasheet OM11N55SA, OM11N60SA Datasheet (OMNIREL)

POWER MOSFET IN HERMETIC ISOLATED

DRAIN

GATE

SOURCE

TO-254AA PACKAGE

600V & 550V, 11 Amp, N-Channel
MOSFET In Hermetic Metal Package

FEATURES

• Isolated Hermetic Metal Package

• Fast Switching

• Low R

• Available Screened To MIL-S-19500, TX, TXV And S

• Ceramic Feedthroughs Also Available

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. The device breakdown ratings provide a substantial
voltage margin for stringent applications such as 270 VDC aircraft power and/or
rectified 230 VAC power (line operation). They are ideally suited for Military
requirements where small size, high performance and high reliability are required,
and in applications such as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high energy pulse circuits.

DS(on)

OM11N60SA
OM11N55SA

4 11 R1
Supersedes 2 04 R0

MAXIMUM RATINGS

PART NUMBER V

OM11N60 600V .50 11A
OM11N55 550V .44 11A

DS

SCHEMATIC

3.1 - 19

R

DS(on)

I

D(MAX)

3.1

3.1

G

D

S

G

D

S

OM11N60SA - OM11N55SA

ELECTRICAL CHARACTERISTICS: T

= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted

C

STATIC P/N OM11N60SA STATIC P/N OM11N55SA

Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions

BV

Drain-Source Breakdown 600 V VGS= 0, BV

DSS

Voltage I

V

Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV

GS(th)

I

Gate-Body Leakage ± 100 nA VGS= ± 20 V I

GSS

I

Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I

DSS

Current 0.2 1.0 mA V

I

On-State Drain Current

D(on)

V

Static Drain-Source On-State 3.1 V VGS= 10 V, ID= 5.5 A V

DS(on)

R

DS(on)

R

DS(on)

3.1 - 20

DYNAMIC DYNAMIC

g

fs

C

iss

C

oss

C

rss

T

d(on)

t

r

T

d(off)

t

f

1

Voltage
Static Drain-Source On-State .47 .50 VGS= 10 V, ID= 5.5 A R
Resistance

1

Static Drain-Source On-State 1.0 VGS= 10 V, ID= 5.5 A, R
Resistance

1

Forward Transductance
Input Capacitance 3000 pF VGS= 0 C
Output Capacitance 440 pF VDS= 25 V C
Reverse Transfer Capacitance 220 pF f = 1 MHz C
Turn-On Delay Time 55 ns VDD= 210 V, ID@ 7.0 A T
Rise Time 75 ns Rg= 5 W, RL= 30 W t
Turn-Off Delay Time 225 ns T
Fall Time 135 ns t

1

11.0 A VDS> I

1

5.0 S(W) VDS 2 V

= 250 mA Voltage ID= 250 mA

D

= 0.8 Max. Rat., VGS= 0, Current 0.2 1.0 mA VDS= 0.8 Max. Rat., VGS= 0,

DS

T

= 125° C TC= 125° C

C

x R

D(on)

, VGS= 10 V I

DS(on)

TC= 125 C Resistance

(W)(W)

(MOSFET) switching times are
essentially independent of
operating temperature.

, ID= 5.5 A g

DS(on)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

Continuous Source Current - 11 A Modified MOSPOWER I

S

(Body Diode) symbol showing (Body Diode) symbol showing

I

Source Current

SM

(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t

Reverse Recovery Time 700 ns TJ= 150 C,IF= IS,t

rr

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

1

1

- 52 A the integral P-N I

- 1.4 V TC= 25 C, IS= -11 A, VGS= 0 VSDDiode Forward Voltage

dl

/ds = 100 A/ms dlF/ds = 100 A/ms

F

Drain-Source Breakdown 550 V VGS= 0,

DSS

Gate-Threshold Voltage 2.0 4.0 V VDS= V

GS(th)

Gate-Body Leakage Forward ±100 nA VGS= ± 20 V

GSSF

Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0

DSS

On-State Drain Current

D(on)

Static Drain-Source On-State 3.3 V VGS= 10 V, ID= 5.5 A

DS(on)

DS(on)

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

S

SM

rr

1

Voltage
Static Drain-Source On-State .37 .44 VGS= 10 V, ID= 5.5 A
Resistance

1

Static Drain-Source On-State .88 VGS= 10 V, ID= 5.5 A,

1

Forward Transductance
Input Capacitance 3000 pF VGS= 0
Output Capacitance 440 pF VDS= 25 V
Reverse Transfer Capacitance 220 pF f = 1 MHz
Turn-On Delay Time 55 ns VDD= 210 V, ID@ 7.0 A
Rise Time 75 ns Rg= 5 W, RL= 30 W
Turn-Off Delay Time 225 ns
Fall Time 135 ns

Continuous Source Current - 11 A Modified MOSPOWER

Source Current

Reverse Recovery Time 700 ns TJ= 150 C,IF= IS,

1

1

1

1

11.0 A VDS> I

5.0 S(W) VDS 2 V

- 52 A the integral P-N

- 1.4 V TC= 25 C, IS= -11 A, VGS= 0

, I

= 250 mA

GS

D

x R

D(on)

, VGS= 10 V

DS(on)

TC= 125 C

, ID= 5.5 A

DS(on)

(MOSFET) switching times are
essentially independent of
operating temperature.

OM11N60SA - OM11N55SA

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)

Symbol Parameter OM11N60 OM11N55 Units

V

DGR

V

DS

I

D

I

D

I

DM

P

D

P

D

Drain Source Voltage 600 550 V
Drain Gate Voltage (RGS= 1.0 M ) 600 550 V
Continuous Drain Current @ TC= 25°C 11 11 A
Continuous Drain Current @ TC= 100°C 7.2 7.2 A
Pulsed Drain Current

1

52 52 A
Max. Power Dissipation @ TC= 25°C 125 125 W
Max. Power Dissipation @ TC= 100°C 50 50 W
Linear Derating Factor Jct. to Case 1.0 1.0 W/°C
Linear Derating Factor Jct. to Ambient .020 .020 W/°C

TJ, T

stg

Operating and Storage Temp. Range -55 to 150 °C
Lead Temperature (1/16" from case for 10 sec.) 300 300 °C

1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.

THERMAL RESISTANCE (Maximum at TA= 25°C)

R

thJC

R

thJA

Junction-to-Case 1.0 1.0 °C/W
Junction-to-Ambient (Free Air Operation) 50 50 °C/W

3.1 - 21

3.1

OM11N60SA - OM11N55SA

205 Crawford Street, Leominster, MA 01 453 USA [phone] FAX [phone]

.144 DIA.

.050
.040

.260
.249

.685
.665

.800
.790

.545
.535

.550
.510

.045
.035

.550
.530

.150 TYP.

.150 TYP.

.005

.040 DIA.
3 PLCS.

.150

.260
MAX

.040

.940

.500
MIN.

.150

.125

2 PLCS.

.290

.125 DIA.

2 PLS.

.200

.540

.250

.740

.540

.100
2 PLCS.

.300

MECHANICAL OUTLINES

TO-254 AA Package

3.1

Standard Products are supplied with glass feedthroughs, for ceramic feedthroughs, add letter “C” to part number,

For Z-Pack configuration, add letter “Z” to part number, Example - OMXXXXSAZ

Omnirel AZ Package

Example - OMXXXXCSA