Page 1
tm
NZT902
NPN Low Saturation Transistor
• These devices are designed with high current gain and
low saturation voltage with collector currents up to 3A continuous.
September 2006
4
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
NZT902 NPN Low Saturation Transistor
Absolute Maximum Ratings* T
=25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T
Symbol Parameter Value
P
D
R
θJA
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm.
Electrical Characteristics* T
Collector-Emitter Voltage 90 V
Collector-Base Voltage 120 V
Emitter-Base Voltage 5 V
Collector Current - Continuous 3 A
Junction Temperature 150 °C
Storage Temperature Range - 55 ~ +150 °C
=25°C unless otherwise noted
a
Units
Total Device Dissipation 1 W
Thermal Resistance, Junction to Ambient 125 °C/W
= 25°C unless otherwise noted
a
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
obo
f
T
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage IC = 10mA
Collector-Base Breakdown Voltage IC = 100µA
Emitter-Base Breakdown Voltage IE = 100µA
Collector-Base Cutoff Current VCB = 100V
VCB = 100V, Ta = 100 °C
Emitter-Base Cutoff Current VEB = 4V
DC Current Gain IC = 0.1A, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
Collector-Emitter Saturation Voltage IC = 0.1A, IB = 5.0mA
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
Base-Emitter Saturation Voltage IC = 1A, IB = 100mA
Output Capacitance VCB = 10V, IE = 0, f = 1MHz
Transition Frequency IC = 100mA, VCE = 5V, f = 100MHz
90 V
120 V
5 V
100
10
100 nA
80
80
25
50
250
600
1.25 V
35 pF
75 MHz
mV
mV
mV
nA
uA
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
NZT902 Rev. B
Page 2
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
0.40
0.35
0.30
0.25
0.20
0.15
0.10
Collector Curr ent, Ic [A]
0.05
0.00
0.0 0.5 1.0 1.5 2.0
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
Ib=0.2m A
Collector-Emitter Voltage, Vce[V]
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
350
150oC
300
250
200
150
100
hfe, Current Gain
50
0
1E-3 0.01 0.1 1
-25oC
-50oC
75oC
25oC
Collector Current, [A]
Vce=2V
NZT902 NPN Low Saturation Transistor
0.5
B=10
0.4
0.3
150oC
75oC
1.2
B=10
1.0
0.8
-25oC
-50oC
25oC
0.2
0.1
Vce(sat), Saturation Voltage,[V]
0.0
0.1 1
Collector Current, [A]
-25oC
-50oC
0.6
25oC
0.4
75oC
150oC
Vbe(sat), Saturation Voltage,[V]
0.2
0.01 0.1 1
Collector Current, [A]
Figure 5. Output Capacitance Figure 6. Power Dissipation vs
Ambient Temperature
80
70
60
[pF]
obo
50
40
30
20
10
Output Capacitance, C
0 20406080100
f=1mhz
Reverse Voltage, VR[V]
1.5
1.0
0.5
Pd, Power Dissipation,[W]
0.0
0 25 50 75 100 125 150
Case Temperature, TC[oC]
NZT902 Rev. B
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 9. SOA
10
Icmax
1
NZT902 NPN Low Saturation Transistor
0.1
0.01
Collector Current. Ic[A]
1E-3
0.1 1 10 100
Collector-Emmiter Voltage, Vce[V]
Vceo(Max)
NZT902 Rev. B
3 www.fairchildsemi.com
Page 4
Mechanical Dimensions
1
SOT-223
3.00
±0.10
MAX1.80
±0.20
1.75
±0.20
0.08MAX
+0.04
0.06
–0.02
NZT902 NPN Low Saturation Transistor
±0.20
0.65
±0.30
2.30 TYP
(0.95) (0.95)
±0.20
.60
(0.46)
(0.89)
4.60
6.50
±0.25
±0.20
0.70
±0.10
3.50
(0.60) (0.60)
0.25
+0.10
–0.05
7.00
0°~10°
Dimensions in Millimeters
4 www.fairchildsemi.com
NZT902 Rev. B
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
®
FAST
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
2
I
C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Across the board. Around the world.™
The Power Franchise
®
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
®
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
®
UltraFET
UniFET™
VCX™
Wire™
®
Programmable Active Droop™
NZT902 NPN Low Saturation Transistor
NZT902 NPN Low Saturation Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a li fe support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or eff ectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a produ ct
NZT902 Rev. B
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
5 www.fairchildsemi.com
Rev. I20
Loading...