Datasheet NX7460LE-BA, NX7460LE-CA, NX7460LE Datasheet (NEC)

Page 1
DATA SHEET
LASER DIODE
NX7460LE
1 480 nm EDFA APPLICATION
InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
DESCRIPTION
The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output power, high efficiency, and stable fundamental mode.
FEATURES
• InGaAsP strained MQW DC-PBH laser diode
• High output power Pf = 120 mW MIN. @ IF = 550 mA CW
• Internal optical isolator, thermoelectric cooler and InGaAs monitor photo diode
• Hermetically sealed 14-pin butterfly package
• Single mode fiber pigtail
• Wide operating temperature range TC = 0 to +65 °C
+1.0
–0.0
1.25
13.3
8.89±0.13
4.0±0.15
5.6
8.2±0.2
0.30
1.0
15.24
2.54
7
8
0.5
20.83±0.13
26.04±0.13
29.97±0.25
14
4– 2.67
22.3
1
Optical Fiber (SMF) Length: 1 m MIN.
PACKAGE DIMENSIONS
in millimeters
φ
0.9
6.0
12.7±0.15
5.15
Pin No.
1 2 3 4 5 6 7
TOP VIEW
#7
Case
PD
LD
#8
PIN CONNECTIONS
Function
Cooler Anode Thermistor PD Anode PD Cathode Case Ground NC NC
Thermistor
Pin No.
8 9
10 11
12 13 14
#1
+
Cooler
#14
Function
NC NC LD Anode, Case Ground LD Cathode NC Case Ground Cooler Cathod
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
The mark
••••
shows major revised points.
©
1999
Page 2
ORDERING INFORMATION
Part Number Available Connector NX7460LE Without Connector NX7460LE-BA With FC-PC Connector NX7460LE-CA With SC-PC Connector
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)
Parameter Symbol Ratings Unit
NX7460LE
Forward Current of LD I Reverse Voltage of LD V Forward Current of PD I Reverse Voltage of PD V Operating Case Temperature T Storage Temperature T
Lead Soldering Temperature (10 s)
F
R
F
R
C
stg
sld
T
700 mA
2.0 V 10 mA 20 V
–20 to +65 °C –40 to +85 °C
260 °C
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25 °C, TC = 0 to +65 °C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit Threshold Current I Forward Voltage V Optical Output Power from Fiber P Center Wavelength Spectrum Width Isolation I
th
CW 25 35 mA
F
IF = 550 mA 2.2 2.7 V
f
IF = 550 mA 120 140 mW
λ
C
IF = 550 mA, RMS (–20 dB) 1 470 1 480 1 490 nm
σ
IF = 550 mA, RMS (–20 dB) 4.0 8.0 nm
S
1 470 nm to 1 490 nm 20 dB
2
Data Sheet P14127EJ2V0DS00
Page 3
ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Monitor PD: T
Parameter Symbol Conditions MIN. TYP. MAX. Unit
LD
= 25 °C, TC = 0 to +65 °C)
NX7460LE
Monitor Current I Monitor Dark Current I Tracking Error
f
γ = 10 log
*1
P
120 mW
m
VR = 5 V, IF = 550 mA 500 1 000 1 500
D
VR = 5 V 2.0 10 nA
*1
γ
Im = const. 0.5 dB
P
f
(mW)
X
f
P
0I
ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Thermistor and TEC: T
Parameter Symbol Conditions MIN. TYP. MAX. Unit
LD
= 25 °C, TC = 0 to +65 °C)
m
f
(25 ˚C) = 120 mW)
(@P
TLD = TC = 25 ˚C
T
LD
= 25 ˚C
C
= 0 to +65 ˚C
T
I
m
µ
A
Thermistor Resistanc e R TLD = 25 °C 9.5 10.0 10.5 k B Constant B 3 300 3 400 3 500 K
Cooler Current I Cooler Voltage V Cooling Capacity
*1
T = TC – T
LD
C
T = 40 K 1.0 1.25 A
C
T = 40 K 3.5 4.3 V
*1
T
IC = 1.25 A, IF = 660 mA 40 K
Data Sheet P14127EJ2V0DS00
3
Page 4
TYPICAL CHARACTERISTICS (TC = 25 °C)
OPTICAL OUTPUT POWER FROM FIBER vs. FORWARD CURRENT
150
(mW)
f
100
50
Optical Output Powr from Fiber P
0 300 600
F
Forward Current I
(mA)
NX7460LE
LONGITUDINAL MODE
Relative Intensity (10 dB/div.)
1 480 1 5301 430
Wavelength λ (nm)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet P14127EJ2V0DS00
Page 5
LD FAMILY FOR DENSE WDM APPLICATION
Absolute Maximum Rat i ngs Typical Characteristi cs
Part Number
T
(°C)
C
stg
T
(°C)
th
I
(mA) TYP. MIN. TYP.
f
P
(mW)
λ
C
(nm)
NX7460LE
Description Package
NDL7540PA
20 to +65
NX7460LE 0 to +65
NX8501 Series 0 to +65 NX8561JD NX7660JC NDL7910P
NX8562LB NX8563LB
*1 *2 *3
*1
*1
0 to +65
20 to +65
20 to +70
20 to +65
20 to +65
Under development Wavelength selectable for ITU-T standards upon request Wavelength selectable for ITU-T standards
40 to +85 40 90 1 480 1 480 nm pump LD
40 to +85 25 120 1 480 1 480 nm pump LD
40 to +85 20 2 1 510 Telemetry Coaxial
40 to +85 20 3 1 510 Telemetry DIP
40 to +85 15 5 1 625 Telemetry DIP
40 to +85 7 0.5
40 to +85 20 20
40 to +85 20 10
1 550
1 550 ITU-T
module
module
*2
2.5 G EA modulator integrated module
*2
1 550 CW LD module BFY
*3
1 550 CW LD module BFY
BFY
BFY
BFY
Data Sheet P14127EJ2V0DS00
5
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NX7460LE
REFERENCE
Document Name Document No. NEC semiconductor device reliability/quality control system C11159E Quality grades on NEC semic onductor devices C11531E Semiconductor device mounting technology manual C10535E SEMICONDUCTOR SELECTION GUI DE Products & Packages (CD-ROM ) X13769X
6
Data Sheet P14127EJ2V0DS00
Page 7
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal.
NEC Corporation
NEC Building, 7-1, Shiba 5-chome, Minato-ku, Tokyo 108-01, Japan
Type number: Manufactured: Serial Number: This product conforms to FDA regulations as applicable to standards 21 CFR Chapter 1. Subchapter J.
DANGER
INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture
NX7460LE
Data Sheet P14127EJ2V0DS00
7
Page 8
NX7460LE
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.
Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.
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M7 98. 8
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