Datasheet NTJD4401N, NVJD4401N Datasheet (ON Semiconductor)

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Page 1

NTJD4401N, NVJD4401N

MOSFET – Dual, N-Channel,

Small Signal, ESD Protection, SC-88

20 V

Features

• Small Footprint (2 x 2 mm)

• Low Gate Charge N−Channel Device

• ESD Protected Gate

• Same Package as SC−70 (6 Leads)

• AEC−Q101 Qualified and PPAP Capable − NVJD4401N

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Load Power Switching

• Li−Ion Battery Supplied Devices

• Cell Phones, Media Players, Digital Cameras, PDAs

• DC−DC Conversion

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current (Based on R

Power Dissipation (Based on R

Continuous Drain Current (Based on R

Power Dissipation (Based on R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Continuous Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

)

THERMAL RESISTANCE RATINGS (Note 1)

Parameter Symbol Typ Max Units

Junction−to−Ambient – Steady State

Junction−to−Lead (Drain) – Steady State

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.

= 25°C unless otherwise stated)

DSS

Steady

State

Steady

State

Steady

State

Steady

State

TA = 25°C

TA = 85°C 0.46

TA = 25°C

TA = 85°C 0.14

TA = 25°C

TA = 85°C 0.65

TA = 25°C

TA = 85°C 0.29

t ≤10 ms

STG

400 458

194 252

20 V

±12 V

0.63

0.27

0.91

0.55

±1.2 A

−55 to 150

0.63 A

260 °C

°C

°C/W

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(BR)DSS

20 V

Typ ID Max

DS(on)

0.29 W @ 4.5 V

0.36 W @ 2.5 V

0.63 A

SC−88 (SOT−363)

Top View

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

SC−88/SOT−363

CASE 419B

STYLE 28

TD = Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

TD M G

S1 G1 D2

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.

May, 2019 − Rev. 7

1 Publication Order Number:

NTJD4401N/D

Page 2

NTJD4401N, NVJD4401N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise stated)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

= 0 V, I

= 0 V, V

= 250 mA

= 16 V 1.0

= ±12 V 10

20 27 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

= VDS, ID = 250 mA

= 4.5 V, I

= 2.5 V, I

= 4.0 V, I

= 0.63 A 0.29 0.375 W

= 0.40 A 0.36 0.445

= 0.63 A 2.0 S

0.6 0.92 1.5 V

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= 4.5 V, V

= 0.63 A

= 20 V

= 10 V,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time tr 0.227

Turn−Off Delay Time td

(ON)

(OFF)

= 4.5 V, V

= 0.5 A, R

= 20 W

= 10 V,

0.083 ms

0.786

Fall Time tf 0.506

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

= 0 V,

=0.23 A

= 0 V, dIS/dt = 100 A/ms,

= 0.63 A

= 25°C 0.76 1.1

= 125°C 0.63

0.410

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

22 mV/ °C

−2.1 mV/ °C

33 46

13 22

2.8 5.0

1.3 3.0

0.1

0.2

0.4

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Page 3

NTJD4401N, NVJD4401N

1.4

1.2

VGS = 4.5 V to 2.2 V

VGS = 2 V

0.8

0.6

0.4

DRAIN CURRENT (AMPS)

0.2

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.7 VGS = 4.5 V

0.6

0.5

0.4

TYPICAL PERFORMANCE CURVES (T

1.2

0.8

0.6

0.4

DRAIN CURRENT (AMPS)

0.2

0.7

0.6

0.5

0.4

TJ = 125°C

TJ = 25°C

1.8 V

1.6 V

1.4 V

1.2 V

108

= 25°C unless otherwise noted)

VDS ≥ 10 V

TJ = 125°C

25°C

0.4

0.8

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

VGS = 2.5 V

TJ = 125°C

TJ = 25°C

TJ = −55°C

1.6

21.2 2.4

0.3

0.2

TJ = 25°C

TJ = −55°C

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0 1.4

DS(on),

0.4 1

0.2 0.6

ID, DRAIN CURRENT (AMPS)

1.20.8

Figure 3. On−Resistance vs. Drain Current and

Temperature

ID = 0.63 A

= 4.5 V

1.8

and 2.5 V

1.6

1.4

1.2

DRAIN−TO−SOURCE

DS(on),

0.8

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

TJ, JUNCTION TEMPERATURE (°C)

50 125100

75 150

0.3 TJ = −55°C

0.2

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0.2 0.6

0 1.4

DS(on),

0.4 1

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Temperature

TJ = 25°C

VGS = 0 V

C, CAPACITANCE (pF)

52015

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

iss

oss

rss

100

1.20.8

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Capacitance Variation

Page 4

NTJD4401N, NVJD4401N

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

0 0.6

0.40.2 1.4

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

TYPICAL PERFORMANCE CURVES (T

0.7

G(TOT)

0.6

0.5

0.4

0.3

0.2

, SOURCE CURRENT (AMPS)

0.1

10.8

ID = 0.63 A

= 25°C

1.2

= 25°C unless otherwise noted)

VGS = 0 V

TJ = 150°C

TJ = 25°C

0.60.40

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

0.8

Figure 8. Diode Forward Voltage vs. Current

10.2

1000

D = 0.5

0.2

100

0.1

0.05

0.02

0.01

r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE

SINGLE PULSE

0.0010.00010.00001

100 10001010.10.010.000001

PULSE TIME t,(s)

Figure 9. Thermal Response

ORDERING INFORMATION

Device Package Shipping

NTJD4401NT1G SC−88

3000 / Tape & Reel

(Pb−Free)

NVJD4401NT1G SC−88

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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Page 5

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

SCALE 2:1

654

123

bbb H

TOP VIEW

ccc

SIDE VIEW END VIEW

RECOMMENDED

SOLDERING FOOTPRINT*

0.30

0.65

PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

aaa H D

aaa C

2X 3 TIPS

0.66

SEATING PLANE

2.50

DIMENSIONS: MILLIMETERS

Cddd

A-B D

DETAIL A

CASE 419B−02

ISSUE Y

DETAIL A

GAGE PLANE

DATE 11 DEC 2012

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.

4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H.

5. DATUMS A AND B ARE DETERMINED AT DATUM H.

6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.

7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT.

MILLIMETERS

DIM MIN NOM MAX

A −−− −−− 1.10 A1 0.00 −−− 0.10 A2 0.70 0.90 1.00 0.027 0.035 0.039

b 0.15 0.20 0.25

C 0.08 0.15 0.22

D 1.80 2.00 2.20

2.00 2.10 2.20

E1 1.15 1.25 1.35

e 0.65 BSC

L 0.26 0.36 0.46

L2 0.15 BSC 0.006 BSC aaa 0.15 0.006 bbb 0.30 0.012 ccc 0.10 0.004 ddd

0.10 0.004

INCHES

MIN NOM MAX

−−− −−− 0.043

0.000 −−− 0.004

0.006 0.008 0.010

0.003 0.006 0.009

0.070 0.078 0.086

0.078 0.082 0.086

0.045 0.049 0.053

0.026 BSC

0.010 0.014 0.018

GENERIC

MARKING DIAGRAM*

XXXMG

XXX = Specific Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

STYLES ON PAGE 2

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98ASB42985B

SC−88/SC70−6/SOT−363

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 2

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Page 6

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE Y

DATE 11 DEC 2012

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

STYLE 7:

PIN 1. SOURCE 2

2. DRAIN 2

3. GATE 1

4. SOURCE 1

5. DRAIN 1

6. GATE 2

STYLE 13:

PIN 1. ANODE

2. N/C

3. COLLECTOR

4. EMITTER

5. BASE

6. CATHODE

STYLE 19:

PIN 1. I OUT

2. GND

3. GND

4. V CC

5. V EN

6. V REF

STYLE 25:

PIN 1. BASE 1

2. CATHODE

3. COLLECTOR 2

4. BASE 2

5. EMITTER

6. COLLECTOR 1

STYLE 2:

CANCELLED

STYLE 8:

CANCELLED

STYLE 14:

PIN 1. VREF

2. GND

3. GND

4. IOUT

5. VEN

6. VCC

STYLE 20:

PIN 1. COLLECTOR

2. COLLECTOR

3. BASE

4. EMITTER

5. COLLECTOR

6. COLLECTOR

STYLE 26:

PIN 1. SOURCE 1

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

STYLE 3:

CANCELLED

STYLE 9:

PIN 1. EMITTER 2

2. EMITTER 1

3. COLLECTOR 1

4. BASE 1

5. BASE 2

6. COLLECTOR 2

STYLE 15:

PIN 1. ANODE 1

2. ANODE 2

3. ANODE 3

4. CATHODE 3

5. CATHODE 2

6. CATHODE 1

STYLE 21:

PIN 1. ANODE 1

2. N/C

3. ANODE 2

4. CATHODE 2

5. N/C

6. CATHODE 1

STYLE 27:

PIN 1. BASE 2

2. BASE 1

3. COLLECTOR 1

4. EMITTER 1

5. EMITTER 2

6. COLLECTOR 2

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. COLLECTOR

4. EMITTER

5. BASE

6. ANODE

STYLE 10:

PIN 1. SOURCE 2

2. SOURCE 1

3. GATE 1

4. DRAIN 1

5. DRAIN 2

6. GATE 2

STYLE 16:

PIN 1. BASE 1

2. EMITTER 2

3. COLLECTOR 2

4. BASE 2

5. EMITTER 1

6. COLLECTOR 1

STYLE 22:

PIN 1. D1 (i)

2. GND

3. D2 (i)

4. D2 (c)

5. VBUS

6. D1 (c)

STYLE 28:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment.

STYLE 5:

PIN 1. ANODE

2. ANODE

3. COLLECTOR

4. EMITTER

5. BASE

6. CATHODE

STYLE 11:

PIN 1. CATHODE 2

2. CATHODE 2

3. ANODE 1

4. CATHODE 1

5. CATHODE 1

6. ANODE 2

STYLE 17:

PIN 1. BASE 1

2. EMITTER 1

3. COLLECTOR 2

4. BASE 2

5. EMITTER 2

6. COLLECTOR 1

STYLE 23:

PIN 1. Vn

2. CH1

3. Vp

4. N/C

5. CH2

6. N/C

STYLE 29:

PIN 1. ANODE

2. ANODE

3. COLLECTOR

4. EMITTER

5. BASE/ANODE

6. CATHODE

STYLE 6:

PIN 1. ANODE 2

2. N/C

3. CATHODE 1

4. ANODE 1

5. N/C

6. CATHODE 2

STYLE 12:

PIN 1. ANODE 2

2. ANODE 2

3. CATHODE 1

4. ANODE 1

5. ANODE 1

6. CATHODE 2

STYLE 18:

PIN 1. VIN1

2. VCC

3. VOUT2

4. VIN2

5. GND

6. VOUT1

STYLE 24:

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. CATHODE

5. CATHODE

6. CATHODE

STYLE 30:

PIN 1. SOURCE 1

2. DRAIN 2

3. DRAIN 2

4. SOURCE 2

5. GATE 1

6. DRAIN 1

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98ASB42985B

SC−88/SC70−6/SOT−363

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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Page 7

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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