Datasheet nus3116mt Datasheet

NUS3116MT

Main Switch Power MOSFET and Dual Charging BJT

-12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low V

ce(sat)

Transistors,

3x3mm WDFN Package

This device integrates one high performance power MOSFET and two low V optimizing charging performance in the battery-powered portable electronics.

Features

•High Performance Power MOSFET

•Dual-Low V

•3.0x3.0x0.8 mm WDFN Package

•Independent Pin-out Provides Circuit Flexibility

•Low Profile (<0.8 mm) for Easy Fit in Thin Environments

•This is a Pb-Free Device

Applications

•Main Switch and Battery Charging Mux for Portable Electronics

•Optimized for Commercial PMUs from Top Suppliers (See Figure 2)

transistors, greatly reducing the layout space and

ce(sat)

Transistors as Charging Power Mux

ce(sat)

1

C

2

3

D

8

7

6

http://onsemi.com

MOSFET

V

(BR)DSS

-12 V

V

MAX V

CEO

-30 V -2.0 A

V

MAX V

CEO

-30 V -2.0 A

1

DFN8

CASE 506BC

3116 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

(Note: Microdot may be in either location)

R

32 mW @ -4.5 V

44 mW @ -2.5 V

Low V

ce(sat)

Low V

ce(sat)

8

TYP ID MAX

DS(on)

PNP (Wall)

MAX IC MAX

EBO

-8.0 V

PNP (USB)

MAX IC MAX

EBO

-8.0 V

MARKING DIAGRAM

1

3116

AYWWG

G

-6.2 A

4

mCOOL™ 3x3 Pin Connections

(Top View)

Figure 1. Simple Schematic

© Semiconductor Components Industries, LLC, 2007

May, 2007 - Rev. 0

5

NUS3116MTR2G WDFN8

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

ORDERING INFORMATION

Device Package Shipping

3000/Tape & Reel

(Pb-Free)

Publication Order Number:

NUS3116MT/D

†

NUS3116MT

P-Channel Power MOSFET Maximum Ratings (T

Parameter

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1) Steady State

= 25°C unless otherwise stated)

J

TA = 25°C

Symbol Value Units

DSS

GS

I

D

-12 V

±8.0 V

-5.47

A

TA = 85°C -4.0

t ≤ 5 s TA = 25°C -6.2

Power Dissipation (Note 1)

Steady State

t ≤ 5 s 2.2

Continuous Drain Current (Note 2, Minimum Pad) Steady State

TA = 25°C

P

D

I

D

1.7

-4.4

W

A

TA = 85°C -3.2

Power Dissipation (Note 2) TA = 25°C P

Pulsed Drain Current

tp = 10 ms

I

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode)

2

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) T

DM

I

D

STG

S

L

1.14 W

-25 A

-55 to 150 °C

-2.8 A

260 °C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient – Steady State (Note 2) R

Junction-to-Ambient – t < 10 s (Note 2) R

Junction-to-Ambient – Steady State (Note 1) R

Junction-to-Ambient – t < 10 s (Note 1) R

Symbol Max Units

q

JA

q

JA

q

JA

q

JA

110 °C/W

56 °C/W

72 °C/W

40 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

2. Surface-mounted on FR4 board using the minimum recommended pad size of 0.5 in sq, 1 oz. Cu.

P-Channel MOSFET Electrical Characteristics (T

Parameter

Symbol Test Condition Min Typ Max Units

= 25°C unless otherwise specified)

J

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient

Drain-to-Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%

VGS = 0 V, ID = -250 mA

ID = -250 mA, ref to 25°C

VGS = 0 V,

V

= -12 V

DS

TJ = 25°C -1.0 mA

TJ = 125°C -10

-12.0 V

-10.1 mV/°C

VDS = 0 V, VGS = ±8 V ±200 nA

VGS = VDS, ID = -250 mA

-0.45 -0.67 -1.1 V

2.68 mV/°C

VGS = -4.5 V, ID = -3.0 A 32 40 mW

VGS = -2.5 V, ID = -3.0 A 44 50

VDS = -16 V, ID = -3.0 A 5.9 S

http://onsemi.com

2

NUS3116MT

P-Channel MOSFET Electrical Characteristics (T

= 25°C unless otherwise specified)

J

Parameter UnitsMaxTypMinTest ConditionSymbol

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

C

ISS

OSS

RSS

G(tot)

G(th)

GD

GS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Rise Time t

Turn-Of f Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Recovery Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

rr

a

b

RR

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%

VGS = 0 V, f = 1.0 MHz,

VDS = -12 V

VGS = -4.5 V, VDS = -12 V,

I

= -3.0 A

D

VGS = -4.5 V, VDD = -12 V,

I

= -3.0 A, RG = 3.0

D

VGS = 0 V,

I

= -1.0 A

S

TJ = 25°C -0.66 -1.2

TJ = 125°C -0.54

VGS = 0 V,

dISD/dt = 100 A/ms,

= -1.0 A

I

S

1329

200

116

13

1.5

2.2

2.9

8

17.5

80

56.5

70.8

14.3

56.4

44 nC

pF

nC

ns

V

ns

Dual-PNP Transistors Maximum Ratings (T

Parameter

Collector-Emitter Voltage V

Collector-Base Voltage V

Emitter-Base Voltage V

Collector Current, Continous I

Collector Current, Pulsed (Note 4) I

Operating Junction and Storage Temperature TJ, T

Thermal Resistance Dissipation P

Thermal Resistance (Note 5)

Thermal Resistance Dissipation P

Thermal Resistance (Note 6)

= 25°C unless otherwise stated)

J

Symbol Value Units

CEO

CBO

EBO

C

STG

D

R

q

JA

D

R

q

JA

4. Single Pulse: Pulse Width = 1 ms

5. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

6. Surface-mounted on FR4 board using the minimum recommended pad size of 100 mm

2

, 1 oz. Cu.

-30 V

-8.0 V

-2.0 A

-6.0 A

-55 to 150 °C

1.5 W

83 °C/W

810 mW

155 °C/W

http://onsemi.com

3

NUS3116MT

Dual-PNP Transistors Electrical Characteristics (T

Parameter

OFF CHARACTERISTICS

Collector-Emitter Voltage

Collector-Base Voltage V

Emitter-Base Voltage V

Collector-Emitter Cutoff Current I

ON CHARACTERISTICS

DC Current Gain (Note 7)

DC Current Gain (Note 7) h

Collector-Emitter Saturation Voltage V

Input Capacitance C

Output Capacitance C

7. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%

from WALL

Symbol Test Condition Min Typ Max Units

V

CEO

CBO

EBO

CES

h

FE

CE(sat)

ibo

obo

1

= 25°C unless otherwise stated)

J

IC = -10 mA, IB = 0 -30 V

IC = -0.1 mA, IE = 0 -30 V

IE = -0.1 mA, IC = 0 -8.0 V

V

= -30 V -0.1

CES

IC = -1.0 A, VCE = -2.0 V 100 200 -

IC = -2.0 A, VCE = -2.0 V 100 200 -

IC = -1.0 A, IB = -0.01 A 0.22 V

IC = -1.0 A, IB = -0.1 A 0.12 V

IC = -2.0 A, IB = -0.2 A 0.24 V

VEB = -0.5 V, f = 1.0 MHz 240 400 pF

VCB = -3.0 V, f = 1.0 MHz 50 100 pF

8

CHR_ctl

mA

from USB

Supply

Voltage

V

DD

R_sns

2

3

D

4

Figure 2. Typical Application Circuit

C

7

USB_ctl

6

BAT_FET_N

5

Main Battery

http://onsemi.com

4

NUS3116MT

TYPICAL CHARACTERISTICS - MOSFET

6

5

4

3

2

, DRAIN CURRENT (A)

D

-I 1

0

-1.7 - -8.0 V

-VDS, DRAIN-TO-SOURCE VOLTAGE (V) -VGS, GATE-T O-SOURCE VOLTAGE (V)

Figure 3. On-Region Characteristics Figure 4. Transfer Characteristics

0.05 VGS = 4.5 V

0.04

0.03

TJ = 100°C

TJ = 25°C

-1.6 V

-1.5 V

VGS = -1.4 V

TJ = 25°C

6

5

4

3

2

, DRAIN CURRENT (A)

D

-I 1

6543210

0

0.05

0.04

0.03

VDS ≥ -10 V

TJ = 25°C

TJ = 100°C

TJ = -55°C

2.01.51.00.5

TJ = 25°C

VGS = -2.5 V

VGS = -4.5 V

, DRAIN-TO-SOURCE RESISTANCE (W)

0.02

DS(on)

R

Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Drain Current and

1.6 ID = -3 A

V

= -4.5 V

1.4

1.2

1.0

, DRAIN-TO-SOURCE

0.8

DS(on)

R

RESISTANCE (NORMALIZED)

0.6

GS

TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 7. On-Resistance Variation with

TJ = -55°C

, DRAIN-TO-SOURCE RESISTANCE (W)

0.02

654321

DS(on)

-ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A)

R

Gate Voltage

10,000

1,000

, LEAKAGE (nA)

DSS

-I

150

1251007550250-25-50

100

VGS = 0 V

TJ = 150°C

TJ = 100°C

Figure 8. Drain-to-Source Leakage Current

Temperature

vs. Voltage

654321

12108642

http://onsemi.com

5

NUS3116MT

TYPICAL CHARACTERISTICS - MOSFET

2800

2400

VDS = 0 V

C

iss

VGS = 0 V

TJ = 25°C

2000

1600

C

iss

1200

C

rss

800

C, CAPACITANCE (pF)

C

oss

400

0

-V

GS-VDS

GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)

Figure 9. Capacitance Variation

1,000

100

VDD = -12 V I

= -3.0 A

D

= -4.5 V

V

GS

t

d(off)

t

f

10

1286420-2-4

6

V

DS

5

Q

T

4

3

Q

2

1

, GATE-T O-SOURCE VOLTAGE (V)

GS

0

-V

gs

Q

gd

Qg, TOTAL GATE CHARGE (nC)

Figure 10. Gate-to-Source and

Drain-to-Source Voltage vs. Total Charge

10

VGS = 0 V

1

TJ = 150°C

V

GS

ID = -3 A T

= 25°C

J

TJ = 25°C

TJ = -55°C

12

10

8

6

4

2

, DRAIN-TO-SOURCE VOLTAGE (V)

DS

0

-V

14121086420

t

d(on)

r

t, TIME (ns)

10

1

RG, GATE RESISTANCE (W)

Figure 11. Resistive Switching Time Variation

vs. Gate Resistance

100

Single Pulse

T

C

10

1

, DRAIN CURRENT (A)

0.1

D

-I

0.01

Figure 13. Maximum Rated Forward Biased

0.1

, SOURCE CURRENT (A)

S

-I

0.01

100101

Figure 12. Diode Forward Voltage vs. Current

= 25°C

100 ms

1 ms

10 ms

R

Limit

DS(on)

Thermal Limit

dc

Package Limit

-VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Safe Operating Area

-V

, SOURCE-TO-DRAIN VOLTAGE (V)

SD

Mounted on 2″ sq. FR4 board (0.5″ sq. 2 oz. Cu single sided) with MOSFET die operating.

1001010.1

1.00.80.60.40.20

http://onsemi.com

6

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

, EFFECTIVE TRANSIENT

JA

q

R

0.01

THERMAL RESPONSE

0.001

Single Pulse

NUS3116MT

TYPICAL CHARACTERISTICS - MOSFET

1E+001E-011E-031E-04 1E-021E-051E-06

t, TIME (s)

Figure 14. FET Thermal Response

1E+01 1E+02 1E+03

http://onsemi.com

7

NUS3116MT

TYPICAL CHARACTERISTICS - BJT

0.60

0.55

TJ = 25°C IC/IB = 100

0.50

0.45

0.40

0.35

0.30

0.25

0.20

, COLLECTOR EMITTER

0.15

SATURATION VOLTAGE (V)

0.10

CE(sat)

V

0.05 0

IC, COLLECTOR CURRENT (A)

Figure 15. Collector Emitter Saturation Voltage

vs. Collector Current

725 675 625 575 525 475 425 375 325 275

, DC CURRENT GAIN

FE

225

h

175 125

150°C (2.0 V)

25°C (2.0 V)

-55 °C (2.0 V)

75

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 17. DC Current Gain vs. Collector

Current

IC/IB = 10

0.60

0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20

, COLLECTOR EMITTER

0.15

SATURATION VOLTAGE (V)

0.10

CE(sat)

V

0.05

1010.10.010.001

, BASE EMITTER

BE(sat)

V

SATURATION VOLTAGE (V)

1010.10.010.001

IC/IB = 100

0

IC, COLLECTOR CURRENT (A)

-55 °C

150°C

Figure 16. Collector Emitter Saturation Voltage

vs. Collector Current

1.0 IC/IB = 100

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

-55 °C

25°C

150°C

Figure 18. Base Emitter Saturation Voltage vs.

Collector Current

25°C

1010.10.010.001

1.0 VCE = -1.0 V

0.9

0.8

0.7

0.6

, BASE EMITTER

0.5

BE(on)

0.4

V

TURN-ON VOLTAGE (V)

0.3

0.2

Figure 19. Base Emitter Turn-On Voltage vs.

-55 °C

25°C

150°C

, COLLECTOR CURRENT (A)

I

C

Collector Current

1.0

0.8

0.6

0.4

0.2

, COLLECTOR-EMITTER VOLTAGE (V)

0

CE

V

1010.10.010.001

http://onsemi.com

8

10 mA

IB, BASE CURRENT (mA)

Figure 20. Saturation Region

500 mA300 mA100 mA

1001010.10.01

NUS3116MT

TYPICAL CHARACTERISTICS - BJT

300

275

250

225

200

175

150

, INPUT CAPACITANCE (pF)

ibo

125

C

100

90

80

70

60

50

40

, OUTPUT CAPACITANCE (pF)

30

obo

C

76543210

20

VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)

35 45

Figure 21. Input Capacitance Figure 22. Output Capacitance

40302520151050

http://onsemi.com

9

REFERENCE

2X

0.10 C

8X

PIN ONE

2X

0.05 C

8X

0.10 C

D2

L

D

A

B

E

TOP VIEW

(A3)

SIDE VIEW

A1

G2

G3

D3

e

14

NUS3116MT

PACKAGE DIMENSIONS

DFN8, 3x3, 0.65P

CASE 506BC-01

ISSUE O

A

SEATING PLANE

C

2.55

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND

0.30mm.

4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.

MILLIMETERS

DIM MIN MAX

A 0.70 0.80 A1 0.00 0.05 A3 0.20 REF

b 0.25 0.35

D 3.00 BSC D2 1.00 1.20 D3 0.95 1.15

E 3.00 BSC E2 1.70 1.90

e 0.65 BSC G2 0.15 REF G3 0.20 REF

K 0.20 ---

L 0.25 0.45

STYLE 1:

PIN 1. EMITTER1

SOLDERING FOOTPRINT*

1

1.28

3.30

2. EMITTER2

3. COLLECTOR

4. SOURCE

5. DRAIN

6. GATE

7. BASE2

8. BASE1

8X

0.35

1.15

1.10

2X

E2

1.80

8X

K

58

8X

b

0.10 B

BOTTOM VIEW

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0.05ACC

NOTE 3

DIMENSIONS: MILLIMETERS

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

0.65

PITCH

8X

0.52

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected]

N. American Technical Support: 800-282-9855 Toll Free USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81-3-5773-3850

http://onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local Sales Representative

NUS3116MT/D

10