Datasheet ntzs3151p Datasheet

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NTZS3151P

Small Signal MOSFET

−20 V, −950 mA, P−Channel SOT−563

Features

• Low R

• Low Threshold Voltage

• Small Footprint 1.6 x 1.6 mm

• These are Pb−Free Devices

Applications

• Load/Power Switches

• Battery Management

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

Improving System Efficiency

DS(on)

(BR)DSS

−20 V

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Typ ID Max

DS(on)

120 mW @ −4.5 V

144 mW @ −2.5 V

195 mW @ −1.8 V

P−Channel MOSFET

−950 mA

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current

(Note 1)

Power Dissipation

(Note 1)

Continuous Drain Current

(Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

= 25°C unless otherwise noted.)

Symbol Value Unit

DSS

Steady

State

t v 5 s

TA = 25°C

TA = 70°C −690

Steady State P

TA = 25°C

TA = 70°C −760

t v 5 s P

tp = 10 ms

STG

−20 V

±8.0 V

−860

170 mW

−950

210 mW

−4.0 A

−55 to

150

−360 mA

260 °C

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 5 s (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in. sq. [1 oz.] including traces).

720

°C/W

600

MARKING

SOT−563−6 CASE 463A

TX = Specific Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

DIAGRAM

TX M G

PINOUT: SOT−563

Top View

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.

March, 2006 − Rev. 2

1 Publication Order Number:

NTZS3151P/D

Page 2

NTZS3151P

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted.)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = −250 mA

VGS = 0 V TJ = 25°C −1.0 mA

VDS = −20 V TJ = 125°C −5.0

VDS = 0 V, VGS = "8.0 V "100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold

Temperature Coefficient

Drain−to−Source On Resistance

GS(TH)

GS(TH)/TJ

VGS = VDS, ID = −250 mA

VGS = −4.5 V, ID = −950 mA 120 150 mW

VGS = −4.5 V, ID = −770 mA 112 142

DS(on)

VGS = −2.5 V, ID = −670 mA 144 200

VGS = −1.8 V, ID = −200 mA 195 240

Forward Transconductance g

VDS = −10 V, ID = −810 mA 3.1 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1.0 MHz,

= −16 V

VGS = −4.5 V, VDS = −10 V;

= −770 mA

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = −4.5 V, VDD = −10 V,

= −950 mA, RG = 6.0 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

VGS = 0 V,

= −360 mA

VGS = 0 V, dIS/dt = 100 A/ms,

= −360 mA

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

−20 V

−13 mV/°C

−0.45 −1.0 V

2.4 mV/°C

458

5.6

0.6

0.9

1.2

5.0

23.7

TJ = 25°C −0.64 −0.9

TJ = 125°C −0.5

10.5 ns

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Page 3

NTZS3151P

3.5

VGS = −3 V

VGS = −2 V

2.5

1.5

DRAIN CURRENT (AMPS)

−I

0.5

−V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.3 VGS = −4.5 V

0.2

TYPICAL PERFORMANCE CURVES (T

−1.8 V

TJ = 25°C

−1.6 V

−1.4 V

−1.2 V

−1 V

2.5

31.51

3.5 5

4 4.5

3.5

2.5

1.5

DRAIN CURRENT (AMPS)

−I

0.5

0.3

0.2

= 25°C unless otherwise noted)

VDS ≥ −10 V

TJ = −55°C

25°C

0.5

125°C

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

VGS = −1.8 V

21.5 3

2.5

TJ = 125°C

0.1

TJ = 25°C

TJ = −55°C

DRAIN−TO−SOURCE RESISTANCE (W)

DS(on),

−ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Drain Current and

Temperature

1.8 ID = −0.95 A

= −4.5 V

1.6

1.4

1.2

DRAIN−TO−SOURCE

DS(on),

0.8

RESISTANCE (NORMALIZED)

VGS = −2.5 V

VGS = −4.5 V

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

DS(on),

0.5 1 1.5

−ID, DRAIN CURRENT (AMPS)

2 2.5 3 3.5 4

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

, LEAKAGE (nA)

DSS

−I

1000

VGS = 0 V

TJ = 150°C

TJ = 125°C

0.6

−50 0−25 25

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

50 125100

Temperature

75 150

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100

02015

−V

510

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

Page 4

NTZS3151P

DS,

(

)

TYPICAL PERFORMANCE CURVES (T

1000

900

800

VDS = 0 V VGS = 0 V

RSS

TJ = 25°C

700

600

500

ISS

400

300

C, CAPACITANCE (pF)

200

OSS

100

−VGS−V

510 10

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

1000

VDD = −25 V I

= −0.95 A

= −4.5 V

100

d(off)

d(on)

101

, GATE RESISTANCE (W)

100

t, TIME (ns)

= 25°C unless otherwise noted)

−V

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

063

−V

, TOTAL GATE CHARGE (nC)

Drain−to−Source Voltage vs. Total Charge

1.2 VGS = 0 V T

= 25°C

1.0

0.8

0.6

0.4

, SOURCE CURRENT (AMPS)

0.2

−I

−V

0.30.2

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−V

ID = −0.77 A T

= 25°C

0.70.50.1

0.80.60.4

VOLTS

DRAIN−TO−SOURCE VOLTAGE

−V

0.9

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

ORDERING INFORMATION

Device Package Shipping

NTZS3151PT1G SOT−563

4000 / Tape & Reel

(Pb−Free)

NTZS3151PT5G SOT−563

8000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

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Page 5

−X−

12 3

0.08 (0.003) X

−Y−

6 5 PL

NTZS3151P

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SOLDERING FOOTPRINT*

0.3

0.0118

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.50 0.55 0.60 b 0.17 0.22 0.27 C

0.08 0.12 0.18 0.003 0.005 0.007

D 1.50 1.60 1.70 E 1.10 1.20 1.30 e 0.5 BSC L 0.10 0.20 0.30

1.50 1.60 1.70

INCHES

MIN NOM MAX

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

0.45

0.0177

1.0

1.35

0.0394

0.0531

0.5

0.0197

SCALE 20:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTZS3151P/D