Datasheet ntzd3156c-d Datasheet

Page 1

NTZD3156C

Small Signal MOSFET

20 V, 540 mA / −20 V, −430 mA Complementary N− and P−Channel MOSFETs with Integrated Pull Up/Down Resistor and ESD Protection

Features

• Leading Trench Technology for Low RDS(on) Performance

• High Efficiency System Performance

• Low Threshold Voltage

• Integrated G−S Resistor on Both Devices

• ESD Protected Gate

• Small Footprint 1.6 x 1.6 mm

• These are Pb−Free Devices

Applications

• Load/Power Switching with Level Shift

• Portable Electronic Products such as GPS, Cell Phones, DSC, PMP,

Bluetooth Accessories

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

N−Channel Continuous Drain Current (Note 1)

P−Channel Continuous Drain Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current N−Channel

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq [1 oz] including traces).

= 25°C unless otherwise specified)

DSS

Steady

State

t v 5 s

Steady

State

t v 5 s

Steady

State

t v 5 s

P−Channel

TA = 25°C

TA = 85°C 390

TA = 25°C 570

TA = 25°C −430

TA = 85°C −310

TA = 25°C −455

TA = 25°C P

tp = 10 ms

STG

20 V

±6 V

540

250

280

1500

−750

−55 to

150

350 mA

260 °C

°C

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Max

(BR)DSS

N−Channel

20 V

P−Channel

−20 V

Max

DS(on)

0.55 W @ 4.5 V

0.7 W @ 2.5 V

0.9 W @ 1.8 V

0.9 W @ −4.5 V

1.2 W @ −2.5 V

2.0 W @ −1.8 V

(Note 1)

540 mA

−430 mA

PINOUT: SOT−563

(Note: Microdot may be in either location)

Top View

SOT−563−6 CASE 463A

STYLE 9

ZC = Specific Device Code M = Date Code G = Pb−Free Package

MARKING DIAGRAM

ZC M G

ORDERING INFORMATION

Device Package Shipping

NTZD3156CT1G SOT−563 4000 / Tape & Reel

NTZD3156CT2G SOT−563 4000 / Tape & Reel

NTZD3156CT5G SOT−563 8000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

†

September, 2008 − Rev. 0

1 Publication Order Number:

NTZD3156C/D

Page 2

NTZD3156C

Thermal Resistance Ratings

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 2)

Junction−to−Ambient – t = 5 s (Note 2) 304

2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

116

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter Symbol N/P Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

BR)DSS/TJ

DSS

GSS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Gate Threshold

Temperature Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

GS(TH)/TJ

DS(on)

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

ISS

OSS

RSS

ISS

OSS

RSS

3. Pulse Test: pulse width v300 ms, duty cycle v2%

VGS = 0 V

ID = 250 mA

ID = −250 mA

−20

20 mV/°C

N VGS = 0 V, VDS = 16 V

TJ = 25°C

1.0 mA

P VGS = 0 V, VDS= −16 V −1.0

N VGS = 0 V, VDS = 16 V

TJ = 125°C

2.0 mA

P VGS = 0 V, VDS= − 16V −5.0

VDS = 0 V, VGS = ±4.5 V

$50 mA

P $50

VGS = V

ID = 250 mA

ID = −250 mA

0.45 1.0

−0.45 −1.0

2.0 −mV/°C

N VGS = 4.5 V, ID = 540 mA 0.19 0.55

P VGS = −4.5V, ID = −430 mA 0.39 0.9

N VGS = 2.5 V, ID = 500 mA 0.26 0.7

P VGS = −2.5V, ID = −300 mA 0.53 1.2

N VGS = 1.8 V, ID = 350 mA 0.36 0.9

P VGS = −1.8V, ID = −150 mA 0.72 2.0

N VDS = 10 V, ID = 540 mA 1.46

P VDS = −10 V, ID = −430 mA 1.18

f = 1 MHz, VGS = 0 V

= 16 V

f = 1 MHz, VGS = 0 V

= −16 V

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Page 3

NTZD3156C

ELECTRICAL CHARACTERISTICS (T

Parameter

Symbol N/P Test Condition Min Typ Max Unit

= 25°C unless otherwise specified)

CHARGES, CAPACITANCES AND GATE RESISTANCE

Total Gate Charge

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

G(TOT)

G(TH)

VGS = 4.5 V, VDS = 10 V; ID = 540 mA

VGS = −4.5 V, VDS = −10 V; ID = −430 mA

SWITCHING CHARACTERISTICS (VGS = V) (Note 4)

Turn−On Delay Time t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

Turn−On Delay Time t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

VGS = 4.5 V, VDD = 10 V, ID = 540 mA,

= 10 W

VGS = −4.5 V, VDD = −10 V, ID = −430 mA,

= 10 W

Drain−Source Diode Characteristics

Forward Diode Voltage V

VGS = 0 V, TJ = 25°C

P IS = −350 mA −0.77 −1.2

VGS = 0 V, TJ = 125°C

P IS = −350 mA 0.63

Reverse Recovery Time t

P IS = −350 mA 14.6

VGS = 0 V,

dIS/dt = 100 A/ms

4. Switching characteristics are independent of operating junction temperatures

1.39 2.5

0.1

0.26

0.39

1.49 2.5

0.1

0.3

0.37

7.7

5.3

9.2

6.5

19.5

IS = 350 mA 0.77 1.2

IS = 350 mA 0.65

IS = 350 mA 9.4

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Page 4

NTZD3156C

N−CHANNEL TYPICAL PERFORMANCE CURVES (T

1.0

4.5V

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, DRAIN CURRENT (A)

0.2

0.1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Figure 1. On−Region Characteristics

0.5

0.45

0.40

0.35

VGS = 2.5 V, 2.0 V

1.8 V

, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 1.6 V

VGS = 1.4 V

VGS = 1.2 V

ID = 0.54 A T

TJ = 25°C

= 25°C

= 25°C unless otherwise noted)

1.2 VDS w 10 V

1.0

0.8

0.6

0.4

, DRAIN CURRENT (A)

0.2

TJ = 125°C

0.6 0.8 1.0 1.2 1.4

, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

0.50 TJ = 25°C

0.45

0.40

0.35

TJ = 25°C

TJ = −55°C

1.6 1.8

VGS = 1.8 V

0.30

0.25

RESISTANCE (W)

0.20

, DRAIN−TO−SOURCE CURRENT

0.15

DS(on)

0.10 123456

, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

1.6 ID = 0.54 A

= 10 V

1.4

1.2

, DRAIN−TO−SOURCE

0.8

DS(on)

RESISTANCE (NORMALIZED)

0.30

0.25

, DRAIN−TO−SOURCE

RESISTANCE (W)

0.20

DS(on)

0.15

VGS = 2.5 V

VGS = 4.5 V

0.10

0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

100

, LEAKAGE (nA)

DSS

TJ = 150°C

TJ = 125°C

0.6

−50 −25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

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2 4 6 8 10 12 14 16 18 20

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

Page 5

NTZD3156C

N−CHANNEL TYPICAL PERFORMANCE CURVES (T

150

VGS = 0 V

125

100

ISS

C, CAPACITANCE (pF)

0 5 10 15 20

OSS

RSS

DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

100

VDD = 10 V I

= 0.54 A

= 4.5 V

t, TIME (ns)

TJ = 25°C

d(off)

d(on)

= 25°C unless otherwise noted)

4.5

3.5

2.5

1.5

0.5

, GATE−TO−SOURCE VOLTAGE (V)

0 0.2 0.4 0.6 0.8 1 1.2 1.4

ID = 0.54 A T

= 25°C

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

0.5 VGS = 0 V T

= 25°C

0.4

0.3

0.2

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

, SOURCE CURRENT (A)

0.1

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.90

0.1 VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

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Page 6

NTZD3156C

P−CHANNEL TYPICAL PERFORMANCE CURVES (T

0.9

−4.5 V

0.8

0.7

0.6

0.5

0.4

0.3

, DRAIN CURRENT (A)

0.2

−I

0.1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

−V

Figure 11. On−Region Characteristics

1.0

0.9

0.8

0.7

0.6

RESISTANCE (W)

0.5

, DRAIN−TO−SOURCE CURRENT

0.4

DS(on)

0.3 123456

−2.5 V VGS = −1.8 V

VGS = −2.0 V

VGS = −1.6 V

TJ = 25°C

VGS = −1.4 V

VGS = −1.2 V

, DRAIN−TO−SOURCE VOLTAGE (V)

ID = −0.43 A T

= 25°C

, GATE−TO−SOURCE VOLTAGE (V)

Figure 13. On−Resistance versus

Gate−to−Source Voltage

= 25°C unless otherwise noted)

1.0

VDS ≤ 10 V

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, DRAIN CURRENT (A)

0.2

−I

TJ = 125°C

0.1

0.6 0.8 1.0 1.2 1.4

−V

, GATE−TO−SOURCE VOLTAGE (V)

Figure 12. Transfer Characteristics

1.0 TJ = 25°C

0.9

0.8

0.7

0.6

0.5

0.4

, DRAIN−TO−SOURCE

RESISTANCE (W)

0.3

DS(on)

0.2

0.1

0.15 0.25 0.35 0.45 0.55

−ID, DRAIN CURRENT (A)

Figure 14. On−Resistance versus Drain

Current and Gate Voltage

TJ = 25°C

TJ = −55°C

1.6 1.8

VGS = −1.8 V

VGS = −2.5 V

VGS = −4.5 V

0.65 0.75

1.6 ID = −0.43 A

= −4.5 V

1.4

1.2

, DRAIN−TO−SOURCE

0.8

DS(on)

RESISTANCE (NORMALIZED)

0.6

−50 −25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (°C)

Figure 15. On−Resistance Variation with

Temperature

1000

100

, LEAKAGE (nA)

DSS

−I

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VGS = 0 V

TJ = 150°C

TJ = 125°C

5101420

−V

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 16. Drain−to−Source Leakage Current

versus Voltage

Page 7

NTZD3156C

P−CHANNEL TYPICAL PERFORMANCE CURVES (T

150

VGS = 0 V

125

ISS

100

C, CAPACITANCE (pF)

0 5 10 15 20

OSS

RSS

DRAIN−TO−SOURCE VOLTAGE (V)

Figure 17. Capacitance Variation

100

VDD = −10 V I

= −0.44 A

= −4.5 V

t, TIME (ns)

TJ = 25°C

d(off)

d(on)

= 25°C unless otherwise noted)

4.5 Q

3.5

2.5

1.5

, GATE−TO−SOURCE VOLTAGE (V)

0.5

−V 0 0.2 0.4 0.6 0.8 1 1.2 1.6

ID = −0.43 A T

= 25°C

Qg, TOTAL GATE CHARGE (nC)

Figure 18. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

0.5 VGS = 0 V T

= 25°C

0.4

0.3

0.2

1.4

1 10 100

RG, GATE RESISTANCE (W)

Figure 19. Resistive Switching Time Variation

versus Gate Resistance

, SOURCE CURRENT (A)

0.1

−I

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.90

0.1

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 20. Diode Forward Voltage versus

Current

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Page 8

−X−

12 3

0.08 (0.003) X

−Y−

6 5 PL

NTZD3156C

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SOLDERING FOOTPRINT*

0.3

0.0118

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.50 0.55 0.60 b 0.17 0.22 0.27 C

0.08 0.12 0.18 0.003 0.005 0.007

D 1.50 1.60 1.70 E 1.10 1.20 1.30 e 0.5 BSC L 0.10 0.20 0.30

1.50 1.60 1.70

STYLE 9:

PIN 1. SOURCE 1

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

INCHES

MIN NOM MAX

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

0.45

0.0177

1.0

1.35

0.0394

0.0531

0.5

0.0197

SCALE 20:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTZD3156C/D