Datasheet ntzd3155c-d Datasheet

NTZD3155C

Small Signal MOSFET

Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package.

Features

•Leading Trench Technology for Low RDS(on) Performance

•High Efficiency System Performance

•Low Threshold Voltage

•ESD Protected Gate

•Small Footprint 1.6 x 1.6 mm

•These are Pb-Free Devices

Applications

•DC-DC Conversion Circuits

•Load/Power Switching with Level Shift

•Single or Dual Cell Li-Ion Battery Operated Systems

•High Speed Circuits

•Cell Phones, MP3s, Digital Cameras, and PDAs

MAXIMUM RATINGS (T

Parameter

Drain-to-Source Voltage V

Gate-to-Source Voltage V

N-Channel Continuous Drain Current (Note 1)

P-Channel Continuous Drain Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current N-Channel

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq [1 oz] including traces).

= 25°C unless otherwise specified)

J

Symbol Value Unit

DSS

Steady

State

t v 5 s

Steady

State

t v 5 s

Steady

State

t v 5 s

P-Channel

TA = 25°C

TA = 85°C 390

TA = 25°C 570

TA = 25°C -430

TA = 85°C -310

TA = 25°C -455

TA = 25°C P

tp = 10 ms

T

I

DM

STG

T

GS

D

S

D

L

20 V

±6 V

540

250

280

1500

-750

-55 to 150

350 mA

260 °C

mA

mW

mA

°C

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Max

I

D

V

(BR)DSS

N-Channel

20 V

P-Channel

-20 V

R

Typ

DS(on)

0.4 W @ 4.5 V

0.5 W @ 2.5 V

0.7 W @ 1.8 V

0.5 W @ -4.5 V

0.6 W @ -2.5 V

1.0 W @ -1.8 V

(Note 1)

540 mA

-430 mA

PINOUT: SOT-563

S

1

G

D

2

1

3

2

Top View

D

6

5

4

1

G

2

S

2

MARKING

6

1

SOT-563-6 CASE 463A

TW = Specific Device Code M = Date Code G = Pb-Free Package

(Note: Microdot may be in either location)

DIAGRAM

TW MG

G

ORDERING INFORMATION

Device Package Shipping

NTZD3155CT1G SOT-563

(Pb-Free)

NTZD3155CT2G SOT-563

(Pb-Free)

NTZD3155CT5G SOT-563

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

4000 / Tape & Reel

8000 / Tape & Reel

†

© Semiconductor Components Industries, LLC, 2007

May, 2007 - Rev. 2

1 Publication Order Number:

NTZD3155C/D

NTZD3155C

Thermal Resistance Ratings

Parameter Symbol Max Unit

Junction-to-Ambient – Steady State (Note 2)

R

q

JA

Junction-to-Ambient – t = 5 s (Note 2) 447

2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

500

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter Symbol N/P Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

V(

BR)DSS/TJ

DSS

GSS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Gate Threshold

Temperature Coefficient

Drain-to-Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

C

ISS

OSS

RSS

ISS

OSS

RSS

3. Pulse Test: pulse width v300 ms, duty cycle v2%

N

P

VGS = 0 V

ID = 250 mA

ID = -250 mA

20

-20

18 mV/°C

N VGS = 0 V, VDS = 16 V

TJ = 25°C

1.0 mA

P VGS = 0 V, VDS= -16 V -1.0

N VGS = 0 V, VDS = 16 V

TJ = 125°C

2.0 mA

P VGS = 0 V, VDS= - 16V -5.0

P

VDS = 0 V, VGS = ±4.5 V

$2.0 mA

N $5.0

N

P

VGS = V

DS

ID = 250 mA

ID = -250 mA

0.45 1.0

-0.45 -1.0

-1.9 -mV/ °C

N VGS = 4.5 V, ID = 540 mA 0.4 0.55

P VGS = -4.5V, ID = -430 mA 0.5 0.9

N VGS = 2.5 V, ID = 500 mA 0.5 0.7

P VGS = -2.5V, ID = -300 mA 0.6 1.2

N VGS = 1.8 V, ID = 350 mA 0.7 0.9

P VGS = -1.8V, ID = -150 mA 1.0 2.0

N VDS = 10 V, ID = 540 mA 1.0

P VDS = -10 V, ID = -430 mA 1.0

80 150

N

f = 1 MHz, VGS = 0 V

V

= 16 V

DS

13 25

10 20

105 175

P

f = 1 MHz, VGS = 0 V

V

= -16 V

DS

15 30

10 20

V

W

S

pF

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NTZD3155C

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol N/P Test Condition Min Ty p Max Unit

CHARGES, CAPACITANCES AND GATE RESISTANCE

Total Gate Charge

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Q

G(TOT)

G(TH)

G(TOT)

G(TH)

GS

GD

GS

GD

N

VGS = 4.5 V, VDS = -10 V; ID = 540 mA

VGS = -4.5 V, VDS = 10 V; ID = -380 mA

P

SWITCHING CHARACTERISTICS (VGS = V) (Note 4)

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Of f Delay Time t

d(OFF)

Fall Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Of f Delay Time t

d(OFF)

Fall Time t

r

f

r

f

N

VGS = 4.5 V, VDD = -10 V, ID = 540 mA,

R

P

VGS = -4.5 V, VDD = 10 V, ID = -215 mA,

R

Drain-Source Diode Characteristics

Forward Diode Voltage V

Reverse Recovery Time t

SD

RR

N

VGS = 0 V, TJ = 25°C

P IS = -350 mA -0.8 -1.2

N

P IS = -350 mA 13

VGS = 0 V,

dIS/dt = 100 A/ms

4. Switching characteristics are independent of operating junction temperatures

= 10 W

G

= 10 W

G

1.5 2.5

0.1

0.2

0.35

1.7 2.5

0.1

0.3

0.4

6.0

4.0

16

8.0

10

12

35

19

IS = 350 mA 0.7 1.2

IS = 350 mA 6.5

nC

ns

V

ns

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3

NTZD3155C

N-CHANNEL TYPICAL PERFORMANCE CURVES (T

1.2

5.5 V

1.0

0.8

1.8 V

VGS = 1.6 V

VGS = 2.0 V to 2.2 V

0.6

VGS = 1.4 V

0.4

, DRAIN CURRENT (A)

D

I

0.2

0

VGS = 1.2 V

VGS = 1.0 V

012345678910

V

, DRAIN-TO-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics

1.0

0.9

0.8

0.7

0.6

RESISTANCE (W)

0.5

, DRAIN-TO-SOURCE CURRENT

0.4

DS(on)

R

0.3 123456

VGS, GATE-T O-SOURCE VOLTAGE (V)

Figure 3. On-Resistance versus

Gate-to-Source Voltage

TJ = 25°C

ID = 0.54 A T

= 25°C

J

= 25°C unless otherwise noted)

J

1.8 VDS w 10 V

1.6

TJ = -55°C

1.4

1.2

TJ = 100°C

1.0

0.8

0.6

, DRAIN CURRENT (A)

0.4

D

I

TJ = 25°C

0.2

0

0.5 1.0 1.5 2.0 2.5 3.0

VGS, GATE-T O-SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

0.9

TJ = 25°C

0.8

VGS = 1.8 V

0.7

0.6

, DRAIN-TO-SOURCE

0.5

RESISTANCE (W)

DS(on)

0.4

R

VGS = 2.5 V

VGS = 4.5 V

0.3

0.2 0.4 0.6 0.8 1 1.2 I

, DRAIN CURRENT (A)

D

Figure 4. On-Resistance versus Drain Current

and Gate Voltage

2

1.8

1.6

1.4

1.2

, DRAIN-TO-SOURCE

1

DS(on)

R

0.8

RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150

ID = 0.54 A V

GS

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation with

Temperature

= 4.5 V

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4

1000

VGS = 0 V

TJ = 150°C

100

, LEAKAGE (nA)

DSS

I

TJ = 100°C

10

2 4 6 8 101214161820

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 6. Drain-to-Source Leakage Current

versus Voltage

NTZD3155C

N-CHANNEL TYPICAL PERFORMANCE CURVES (T

200

150

VGS = 0 V

100

50

C, CAPACITANCE (pF)

100

VDS = 0 V

C

OSS

0

0 5 10 15 20

V

DS

DRAIN-T O-SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

VDS = 10 V I

= 0.2 A

D

= 4.5 V

V

GS

t

d(OFF)

TJ = 25°C

C

ISS

= 25°C unless otherwise noted)

J

5

V

DS

4

Q

T

V

3

2

Q

1

, GATE-T O-SOURCE VOLTAGE (V)

GS

V

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

GS

Q

GD

ID = 0.54 A T

= 25°C

J

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate-to-Source and

Drain-to-Source Voltage versus Total Charge

0.6 VGS = 0 V T

= 25°C

0.5

0.4

J

GS

20

16

12

8

4

0

, DRAIN-TO-SOURCE VOLTAGE (V)

DS

V

10

t, TIME (ns)

t

f

t

r

t

d(ON)

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

0.3

0.2

, SOURCE CURRENT (A)

S

I

0.1

0

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

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NTZD3155C

0.8

0.6

P-CHANNEL TYPICAL PERFORMANCE CURVES (T

1

VGS = -2 V

TJ = 25°C

-1.6 V

VGS = -1.8 V

1

0.8

0.6

= 25°C unless otherwise noted)

J

VDS ≥ -10 V

-1.4 V

0.4

DRAIN CURRENT (A)

D,

0.2

-I

-1.2 V

-1 V

0

1

0

-V

, DRAIN-TO-SOURCE VOLTAGE (V)

DS

5

632

4

710

89

Figure 1. On-Region Characteristics

0.8

0.75

0.7

0.65

0.6

0.55

0.5

0.45

DRAIN-T O-SOURCE RESISTANCE (W)

0.4 16

DS(on),

R

24

-VGS, GATE-T O-SOURCE VOLTAGE (V)

35

ID = -0.43 A T

= 25°C

J

0.4

DRAIN CURRENT (A)

D,

0.2

-I

TJ = -55°C

25°C

0

0.5

100°C

1

-VGS, GATE-T O-SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

1.4 TJ = 25°C

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

DRAIN-T O-SOURCE RESISTANCE (W)

0.5

0.1 1.0

DS(on),

R

0.2 0.3 0.4

VGS = -1.8 V

VGS = -2.5 V

0.5 0.6 0.7 0.8 0.9

-ID, DRAIN CURRENT (A)

21.5 2.5

Figure 3. On-Resistance vs. Gate-to-Source

Voltage

1.6 ID = -0.43 A

V

= -4.5 V

GS

1.4

1.2

1

DRAIN-T O-SOURCE

0.8

DS(on),

R

RESISTANCE (NORMALIZED)

0.6

-50 0-25 25

75 150

50 125100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation with

Temperature

10000

1000

, LEAKAGE (nA)

100

DSS

-I

10

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6

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 100°C

24 8

610 1814

, DRAIN-TO-SOURCE VOLTAGE (V)

-V

DS

12

Figure 6. Drain-to-Source Leakage Current

vs. Voltage

2016

NTZD3155C

250

VGS = 0 V

200

C

150

100

C

C, CAPACITANCE (pF)

50

0

100

10

t, TIME (ns)

1

P-CHANNEL TYPICAL PERFORMANCE CURVES (T

TJ = 25°C

ISS

5

4

3

= 25°C unless otherwise noted)

J

Q

T

-V

DS

2

OSS

C

RSS

510

DRAIN-T O-SOURCE VOLTAGE (V)

15

20

Q

GS

1

GATE-T O-SOURCE VOLTAGE (V)

GS,

0

-V 021

Q

GD

0.4 0.6 0.8

Q

, TOTAL GATE CHARGE (nC)

G

Figure 7. Capacitance Variation Figure 8. Gate-to-Source and

Drain-to-Source Voltage vs. Total Charge

0.6 VGS = 0 V T

= 25°C

J

t

d(OFF)

0.4

0.2

, SOURCE CURRENT (AMPS)

S

-I

0

-V

, SOURCE-TO-DRAIN VOLTAGE (V)

SD

t

d(ON)

t

f

t

r

VDD = -10 V I

= -0.215 A

D

= -4.5 V

V

GS

101

, GATE RESISTANCE (W)

R

G

100

-V

ID = -0.215 A T

= 25°C

J

1.40.2 1.2

0.70.50.3

GS

10

9

8

7

6

5

4

3

2

1

DRAIN-T O-SOURCE VOLTAGE (VOLTS)

0

1.81.6

0.80.60.4

DS,

-V

0.9

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

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Figure 10. Diode Forward Voltage vs. Current

7

D

-X-

6

12 3

e

45

b

0.08 (0.003) X

-Y-

6 5 PL

NTZD3155C

PACKAGE DIMENSIONS

SOT-563, 6 LEAD

CASE 463A-01

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

A

L

E

H

E

C

M

Y

SOLDERING FOOTPRINT*

0.3

0.0118

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.50 0.55 0.60 b 0.17 0.22 0.27 C

0.08 0.12 0.18 0.003 0.005 0.007

D 1.50 1.60 1.70 E 1.10 1.20 1.30 e 0.5 BSC L 0.10 0.20 0.30

H

1.50 1.60 1.70

E

INCHES

MIN NOM MAX

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

0.45

0.0177

1.0

1.35

0.0394

0.0531

0.5

0.0197

mm

ǒ

SCALE 20:1

inches

Ǔ

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTZD3155C/D