Datasheet ntzd3152p Datasheet

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NTZD3152P

Small Signal MOSFET

−20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563

Features

• Low R

Improving System Efficiency

DS(on)

• Low Threshold Voltage

• ESD Protected Gate

• Small Footprint 1.6 x 1.6 mm

• These are Pb−Free Devices

Applications

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Management

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current

(Note 1)

Power Dissipation

(Note 1)

Continuous Drain Current

(Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 5 s (Note 1) 447

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in. sq. [1 oz.] including traces).

= 25°C unless otherwise noted.)

DSS

Steady

State

t v 5 s

TA = 25°C

TA = 85°C −310

Steady State P

TA = 25°C

TA = 85°C −328

t v 5 s P

tp = 10 ms

STG

−20 V

±6.0 V

−430

250 mW

−455

280 mW

−750 mA

−55 to

150

−350 mA

260 °C

500

°C/W

°C

http://onsemi.com

(BR)DSS

−20 V

SOT−563−6

CASE 463A

(Note: Microdot may be in either location)

Typ ID Max

DS(on)

0.5 W @ −4.5 V

0.6 W @ −2.5 V

1.0 W @ −1.8 V

P−Channel

MOSFET

−430 mA

MARKING DIAGRAM

TU = Specific Device Code M = Date Code G = Pb−Free Package

TU M G

PINOUT: SOT−563

Top View

ORDERING INFORMATION

Device Package Shipping

NTZD3152PT1G

NTZD3152PT1H

NTZD3152PT5G

NTZD3152PT5H

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

SOT−563

(Pb−Free)

SOT−563

(Pb−Free)

4000 / Tape & Reel

8000 / Tape & Reel

†

March, 2010 − Rev. 2

1 Publication Order Number:

NTZD3152P/D

Page 2

NTZD3152P

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted.)

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

(BR)DSS

(BR)DSS/TJ

DSS

VGS = 0 V, ID = −250 mA

VGS = 0 V TJ = 25°C −1.0 mA

VDS = −16 V TJ = 125°C −2.0

Gate−to−Source Leakage Current I

GSS

VDS = 0 V, VGS = "4.5 V "2.0

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold

Temperature Coefficient

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = −250 mA

VGS = −4.5 V, ID = −430 mA 0.5 0.9 W

VGS = −2.5 V, ID = −300 mA 0.6 1.2

VGS = −1.8 V, ID = −150 mA 1.0 2.0

Forward Transconductance g

VDS = −10 V, ID = −430 mA 1.0 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1.0 MHz,

= −16 V

VGS = −4.5 V, VDS = −10 V,

= −215 mA

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(on)

d(off)

VGS = −4.5 V, VDD = −10 V,

= −215 mA, RG = 10 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

VGS = 0 V,

= −350 mA

VGS = 0 V, dISD/dt = 100 A/ms,

IS = −350 mA

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

−20 V

18 mV/°C

−0.45 −1.0 V

−1.9 mV/°C

105 175

15 30

10 20

1.7 2.5

0.1

0.3

0.4

TJ = 25°C −0.8 −1.2 V

13 ns

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Page 3

NTZD3152P

0.8

0.6

TYPICAL PERFORMANCE CURVES (T

VGS = −2 V

VGS = −1.8 V

TJ = 25°C

−1.6 V

= 25°C unless otherwise noted)

VDS ≥ −10 V

0.8

0.6

−1.4 V

0.4

−1.2 V

DRAIN CURRENT (AMPS)

0.2

−I

−1 V

−V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

632

710

Figure 1. On−Region Characteristics

0.8

0.75

0.7

0.65

0.6

0.55

0.5

0.45

DRAIN−TO−SOURCE RESISTANCE (W)

0.4 16

DS(on),

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

ID = −0.43 A T

= 25°C

DRAIN CURRENT (AMPS)

0.2

−I

25°C

0.5

TJ = −55°C

100°C

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

1.4 TJ = 25°C

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

DRAIN−TO−SOURCE RESISTANCE (W)

0.5

0.1 1.0

DS(on),

0.2 0.3 0.4

VGS = −1.8 V

VGS = −2.5 V

0.5 0.6 0.7 0.8 0.9

−ID, DRAIN CURRENT (AMPS)

21.5 2.5

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.6 ID = −0.43 A

= −4.5 V

1.4

1.2

DRAIN−TO−SOURCE

0.8

DS(on),

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

75 150

50 125100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

10000

1000

, LEAKAGE (nA)

100

DSS

−I

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Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 100°C

24 8

610 1814

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

2016

Page 4

NTZD3152P

DS,

(

)

TYPICAL PERFORMANCE CURVES (T

250

VGS = 0 V

TJ = 25°C

200

ISS

150

100

OSS

RSS

C, CAPACITANCE (pF)

510

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

100

d(off)

d(on)

, GATE RESISTANCE (W)

VDD = −10 V I

= −0.215 A

= −4.5 V

101

100

t, TIME (ns)

= 25°C unless otherwise noted)

−V

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

021

−V

0.4 0.6 0.8

, TOTAL GATE CHARGE (nC)

Drain−to−Source Voltage vs. Total Charge

0.6 VGS = 0 V T

= 25°C

0.4

0.2

, SOURCE CURRENT (AMPS)

−I

−V

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−V

ID = −0.215 A T

= 25°C

1.40.2 1.2

0.70.50.3

VOLTS

DRAIN−TO−SOURCE VOLTAGE

1.81.6

−V

0.80.60.4

0.9

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

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Figure 10. Diode Forward Voltage vs. Current

Page 5

−X−

12 3

0.08 (0.003) X

−Y−

6 5 PL

NTZD3152P

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SOLDERING FOOTPRINT*

0.3

0.0118

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.50 0.55 0.60 b 0.17 0.22 0.27 C

0.08 0.12 0.18 0.003 0.005 0.007

D 1.50 1.60 1.70 E 1.10 1.20 1.30 e 0.5 BSC L 0.10 0.20 0.30

1.50 1.60 1.70

INCHES

MIN NOM MAX

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

0.45

0.0177

1.0

1.35

0.0394

0.0531

0.5

0.0197

SCALE 20:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTZD3152P/D