Datasheet ntud3169cz Datasheet

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NTUD3169CZ

Small Signal MOSFET

20 V, 220 mA / −200 mA, Complementary,

1.0 x 1.0 mm SOT−963 Package

Features

• Complementary MOSFET Device

• Offers a Low R

Package

Solution in the Ultra Small 1.0x1.0 mm

DS(on)

• 1.5 V Gate Voltage Rating

• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely

Thin Environments such as Portable Electronics.

• This is a Pb−Free Device

Applications

• Load Switch with Level Shift

• Optimized for Power Management in Ultra Portable Equipment

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

N−Channel Continuous Drain Current (Note 1)

P−Channel Continuous Drain Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current N−Channel

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.

2. Pulse Test: pulse width v300 ms, duty cycle v2%

= 25°C unless otherwise specified)

DSS

Steady

State

t v 5 s

Steady

State

t v 5 s

Steady

State

t v 5 s

P−Channel

TA = 25°C

TA = 85°C 160

TA = 25°C 280

TA = 25°C −200

TA = 85°C −140

TA = 25°C −250

TA = 25°C P

tp = 10 ms

STG

20 V

±8 V

220

125

200

800

−600

−55 to

150

200 mA

260 °C

°C

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(BR)DSS

N−Channel

20 V

P−Channel

20 V

Max ID Max

DS(on)

1.5 W @ 4.5 V

2.0 W @ 2.5 V

3.0 W @ 1.8 V

4.5 W @ 1.5 V

5.0 W @ −4.5 V

6.0 W @ −2.5 V

7.0 W @ −1.8 V

10 W @ −1.5 V

0.22 A

−0.2 A

PINOUT: SOT−963

Top View

MARKING DIAGRAM

SOT−963

CASE 527AD

2 = Specific Device Code M = Date Code G = Pb−Free Package

2 M G

ORDERING INFORMATION

Device Package Shipping

NTUD3169CZT5G SOT−963

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

8000 /

Tape & Reel

†

August, 2008 − Rev. 0

1 Publication Order Number:

NTUD3169CZ/D

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NTUD3169CZ

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State, Minimum Pad (Note 3)

Junction−to−Ambient – t v 5 s (Note 3) 600

3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.

1000

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter Symbol N/P Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(BR)DSS

VGS = 0 V

Zero Gate Voltage Drain Current

N VGS = 0 V, VDS = 5.0 V

DSS

P VGS = 0 V, VDS = −5.0 V

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

DSS

GSS

N VGS = 0 V, VDS = 16 V

P VGS = 0 V, VDS= −16 V −100

P ±100

VDS = 0 V, VGS = ±5.0 V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Drain−to−Source On Resistance

GS(TH)

N VGS = 4.5 V, ID = 100 mA 0.75 1.5

VGS = V

P VGS = −4.5V, ID = −100 mA 2.0 5.0

N VGS = 2.5 V, ID = 50 mA 1.0 2.0

P VGS = −2.5V, ID = −50 mA 2.6 6.0

N VGS = 1.8 V, ID = 20 mA 1.4 3.0

DS(on)

P VGS = −1.8V, ID = −20 mA 3.4 7.0

N VGS = 1.5 V, ID = 10 mA 1.8 4.5

P VGS = −1.5 V, ID = −10 mA 4.0 10

N VGS = 1.2 V, ID = 1.0 mA 2.8

P VGS = −1.2 V, ID = −1.0 mA 6.0

Forward Transconductance

Source−Drain Diode Voltage V

N VDS = 5.0 V, ID = 125 mA 0.48

P VDS = −5.0 V, ID = −125 mA 0.35

N VGS = 0 V, IS = 10 mA

P VGS = 0 V, IS = −10 mA −0.6 −1.0

CAPACITANCES

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

ISS

OSS

RSS

ISS

OSS

RSS

f = 1 MHz, VGS = 0 V

VDS = 15 V

f = 1 MHz, VGS = 0 V

VDS = −15 V

4. Switching characteristics are independent of operating junction temperatures

ID = 250 mA

ID = −250 mA

−20

TJ = 25°C 50

TJ = 85°C 200

TJ = 25°C −50

TJ = 85°C −200

TJ = 25°C

ID = 250 mA

ID = −250 mA

TJ = 25°C

0.4 1.0

−0.4 −1.0

0.6 1.0

12.5

3.6

2.6

13.5

3.8

2.0

100

±100

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NTUD3169CZ

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter UnitMaxTypMinTest ConditionN/PSymbol

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

d(ON)

d(OFF)

VGS = 4.5 V, VDD = 10 V, ID = 200 mA,

RG = 2.0 W

VGS = −4.5 V, VDD = −15 V,

ID = −200 mA, RG = 2.0 W

4. Switching characteristics are independent of operating junction temperatures

16.5

25.5

142

196

145

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NTUD3169CZ

TYPICAL CHARACTERISTICS (N−CHANNEL)

0.4

0.3

0.2

, DRAIN CURRENT (A)

0.1

VGS = 2 thru 5 V

1.8 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

TJ = 25°C

1.6 V

1.4 V

1.2 V

ID = 220 mA TJ = 25°C

0.4

0.3

0.2

, DRAIN CURRENT (A)

0.1

543210

1.50

1.25

1.00

0.75

VDS ≥ 5 V

TJ = 25°C

TJ = −55°C

TJ = 25°C

VGS = 2.5 V

VGS = 4.5 V

TJ = 125°C

3210

, DRAIN−TO−SOURCE

RESISTANCE (W)

DS(on)

VGS, GATE−TO −SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and

1.75

ID = 100 mA

1.50

1.25

1.00

, DRAIN−TO−SOURCE

0.75

DS(on)

RESISTANCE (NORMALIZED)

0.50

VGS = 4.5 V

Figure 5. On−Resistance Variation with

0.50

, DRAIN−TO−SOURCE

RESISTANCE (W)

DS(on)

0.25

543210

Gate Voltage

10,000

VGS = 0 V

1000

, LEAKAGE (nA)

100

DSS

1251007550250−25−50

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

150

TJ = 150°C

TJ = 125°C

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

0.350.30 0.400.250.200.150.100.05

201612840

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NTUD3169CZ

TYPICAL CHARACTERISTICS (N−CHANNEL)

20.0

VGS = 0 V

17.5

15.0

iss

TJ = 25°C

12.5

10.0

oss

7.50

5.00

C, CAPACITANCE (pF)

2.50

rss

GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation

0.200

0.175

0.150

0.125

0.100

VGS = 0 V

TJ = 25°C

20151050

1000

VDD = 10 V I VGS = 4.5 V

100

t, TIME (ns)

= 200 mA

RG, GATE RESISTANCE (W)

vs. Gate Resistance

d(off)

d(on)

100101

0.075

0.050

, SOURCE CURRENT (A)

0.025

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

10.80.60.40.20

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NTUD3169CZ

TYPICAL CHARACTERISTICS (P−CHANNEL)

0.36

0.32

0.28

0.24

0.20

0.16

0.12

, DRAIN CURRENT (A)

0.08

0.04

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 10. On−Region Characteristics Figure 11. Transfer Characteristics

, DRAIN−TO−SOURCE

RESISTANCE (W)

DS(on)

2.0 V

VGS = 2.2 thru 5 V

TJ = 25°C

1.8 V

1.6 V

1.4 V

1.2 V

ID = 200 mA TJ = 25°C

0.36

0.32

0.28

0.24

0.20

0.16

0.12

, DRAIN CURRENT (A)

0.08

0.04

543210

, DRAIN−TO−SOURCE

RESISTANCE (W)

DS(on)

VDS ≥ 5 V

TJ = 25°C

TJ = −55°C

VGS = 2.5 V

VGS = 4.5 V

TJ = 125°C

TJ = 25°C

4210

VGS, GATE−TO −SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 12. On−Resistance vs. Gate Voltage Figure 13. On−Resistance vs. Drain Current

1.75

1.50

1.25

1.00

, DRAIN−TO−SOURCE

0.75

DS(on)

RESISTANCE (NORMALIZED)

0.50

ID = 200 mA

VGS = 4.5 V

Figure 14. On−Resistance Variation with

54321

and Gate Voltage

10,000

VGS = 0 V

1000

, LEAKAGE (nA)

100

DSS

1251007550250−25−50

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

150

TJ = 150°C

TJ = 125°C

Figure 15. Drain−to−Source Leakage Current

Temperature

vs. Voltage

0.350.300.250.200.150.100.05

201612840

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NTUD3169CZ

TYPICAL CHARACTERISTICS (P−CHANNEL)

C, CAPACITANCE (pF)

1000

iss

100

VGS = 0 V

oss

TJ = 25°C

t, TIME (ns)

VDD = 10 V

ID = 200 mA VGS = 4.5 V

RG, GATE RESISTANCE (W)

rss

468 141618

DRAIN−TO−SOURCE VOLTAGE (V)

20121020

Figure 16. Capacitance Variation Figure 17. Resistive Switching Time Variation

vs. Gate Resistance

0.18

0.16

0.14

0.12

0.10

0.08

0.06

, SOURCE CURRENT (A)

0.04

0.02

VGS = 0 V

TJ = 25°C

10.80.60.40.20

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 18. Diode Forward Voltage vs. Current

d(off)

d(on)

100101

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NTUD3169CZ

PACKAGE DIMENSIONS

SOT−963

CASE 527AD−01

ISSUE D

456

12 3

A B

C0.08

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.34 0.37 0.40

b 0.10 0.15 0.20 C 0.07 0.12 0.17 D 0.95 1.00 1.05 E 0.75 0.80 0.85

e 0.35 BSC

L 0.05 0.10 0.15

0.95 1.00 1.05

INCHES

MIN NOM MAX

0.004 0.006 0.008

0.003 0.005 0.007

0.037 0.039 0.041

0.03 0.032 0.034

0.014 BSC

0.002 0.004 0.006

0.037 0.039 0.041

SOLDERING FOOTPRINT*

0.35

0.014

0.90

0.0354

0.20

0.008

0.20

0.008

SCALE 20:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTUD3169CZ/D