Datasheet ntud3128n Datasheet

Page 1
NTUD3128N
Small Signal MOSFET
20 V, 200 mA, Dual N-Channel, 1.0 mm x
1.0 mm SOT-963 Package
•Dual N-Channel MOSFET
•Offers a Low R
Package
Solution in the Ultra Small 1.0 x 1.0 mm
DS(ON)
•1.5 V Gate Voltage Rating
•Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics
•These are Pb-Free Devices
Applications
•General Purpose Interfacing Switch
•Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (T
Parameter Symbol Value Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Continuous Drain Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature TJ,
Source Current (Body Diode) (Note 2) I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
= 25°C unless otherwise specified)
J
DSS
GS
Steady
State
t v 5 s
Steady
State
t v 5 s
TA = 25°C
TA = 85°C 115
TA = 25°C 200
TA = 25°C P
tp = 10 ms
T
I
I
DM
STG
T
D
D
S
L
20 V
±8 V
160
125
200
800 mA
-55 to 150
200 mA
260 °C
mA
mW
°C
G1
V
(BR)DSS
20 V
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D1
S1
PINOUT: SOT-963
S
1
1
G
2
1
3
D
2
SOT-963
CASE 527AA
R
MAX ID Max
DS(ON)
3.0 W @ 4.5 V
4.0 W @ 2.5 V
6.0 W @ 1.8 V
10 W @ 1.5 V
G2
N-Channel
MOSFET
Top View
0.2 A
D2
S2
D
6
1
G
5
2
S
4
2
MARKING DIAGRAM
N MG
1
© Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 0
N = Specific Device Code M = Date Code G = Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
1 Publication Order Number:
NTUD3127C/D
Page 2
NTUD3128N
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t = 5 s (Note 3) 600
R
q
JA
3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
1000
°C/W
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
I
DSS
VGS = 0 V, VDS = 5 V
VGS = 0 V, VDS = 16 V TJ = 25°C 100
Gate-to-Source Leakage Current I
GSS
VDS = 0 V, VGS = ±5.0 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Drain-to-Source On Resistance
V
GS(TH)
VGS = VDS, ID = 250 mA
VGS = 4.5 V, ID = 100 mA 1.5 3.0
VGS = 2.5 V, ID = 50 mA 2.0 4.0
R
DS(ON)
VGS = 1.8 V, ID = 20 mA 3.0 6.0
VGS = 1.5 V, ID = 10 mA 4.0 10
VGS = 1.2 V, ID = 1.0 mA 5.5
Forward Transconductance g
Source-Drain Diode Voltage V
FS
SD
VDS = 5.0 V, ID = 125 mA 0.35 S
VGS = 0 V, ID = 10 mA 0.6 1.0 V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
C
ISS
OSS
RSS
f = 1.0 MHz, VGS = 0 V
V
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn-On Delay Time
Rise Time t
Turn-Of f Delay Time t
Fall Time t
t
d(ON)
r
d(OFF)
f
VGS = 4.5 V, VDD = 10 V, ID = 200 mA,
R
4. Switching characteristics are independent of operating junction temperatures.
= 15 V
DS
= 2.0 W
G
20 V
TJ = 25°C 50
TJ = 85°C 200
0.4 1.0 V
9.0
3.0
2.2
15
24
90
60
nA
W
pF
ns
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2
Page 3
NTUD3128N
TYPICAL PERFORMANCE CURVES
0.4 0.4 TJ = 25°C
2.0 V
0.3
VGS = 3 V to 5 V
2.5 V
0.2
1.5 V
0.1
DRAIN CURRENT (AMPS)
D,
I
DRAIN CURRENT (AMPS)
D,
I
1.0 V
0
0
1
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
25
34
Figure 1. On-Region Characteristics
15
10
ID = 200 mA
TJ = 25°C
0.3
0.2
0.1
2.5
2.0
1.5
VDS ≥ 5 V
TJ = -55°C
TJ = 25°C
0
0
1
2
3
VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
TJ = 25°C
VGS = 2.5 V
VGS = 4.5 V
TJ = 125°C
4
5
1.0
5
0.5
DRAIN-T O-SOURCE RESISTANCE (W)
0
035
DS(on),
R
1
V
, GATE-T O-SOURCE VOLTAGE (VOLTS)
GS
2
4
Figure 3. On-Resistance vs. Gate Voltage
1.75
ID = 200 mA
1.5 V
= 4.5 V
GS
1.25
DRAIN-T O-SOURCE RESISTANCE (W)
0
DS(on),
R
0.1 0.40.05 0.2 0.350.15
Figure 4. On-Resistance vs. Drain Current and
1000
VGS = 0 V
100
1.0
0.75
DRAIN-T O-SOURCE
0.5
DS(on),
0.25
R
RESISTANCE (NORMALIZED)
0
-50 0-25 25
50 150
75
TJ, JUNCTION TEMPERATURE (°C)
125100
, LEAKAGE (nA)
10
DSS
I
1
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.30.25
ID, DRAIN CURRENT (AMPS)
Gate Voltage
TJ = 150°C
TJ = 125°C
12
1648
20
Figure 5. On-Resistance Variation with
Temperature
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Figure 6. Drain-to-Source Leakage Current
vs. Voltage
3
Page 4
NTUD3128N
TYPICAL PERFORMANCE CURVES
15
VGS = 0 V T
= 25°C
12
J
C
iss
9
6
C, CAPACITANCE (pF)
3
0
02 12
46810
14 16
18
C
oss
C
rss
20
GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation Figure 8. Resistive Switching Time
0.2
VGS = 0 V T
= 25°C
J
0.15
1000
VDD = 10 V I
= 200 mA
D
= 4.5 V
V
GS
100
t, TIME (ns)
10
1
1 10 100
, GATE RESISTANCE (OHMS)
R
G
Variation vs. Gate Resistance
t
d(off)
t
f
t
r
t
d(on)
0.1
0.05
, SOURCE CURRENT (AMPS)
S
I
0
0
0.60.2
0.80.4
1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device Package Shipping
NTUD3128NT5G SOT-963
8000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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NTUD3128N
PACKAGE DIMENSIONS
SOT-963
CASE 527AA-01
ISSUE A
D
456
12 3
e
-Y-
A
L
-X-
E
H
E
C
b
6X
X0.08
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
DIM MIN NOM MAX
A 0.40 0.45 0.50
b 0.10 0.15 0.20 C 0.05 0.10 0.15 D 0.95 1.00 1.05 E 0.75 0.80 0.85
e 0.35 BSC
L 0.05 0.10 0.15
H
E
0.95 1.00 1.05
INCHES
MIN NOM MAX
0.016 0.018 0.020
0.004 0.006 0.008
0.002 0.004 0.006
0.037 0.039 0.041
0.03 0.032 0.034
0.014 BSC
0.002 0.004 0.006
0.037 0.039 0.041
SOLDERING FOOTPRINT*
0.35
0.35
0.014
0.014
0.90
0.0354
0.20
0.08
0.20
0.08
mm
ǒ
SCALE 20:1
inches
Ǔ
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTUD3128N/D
5
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