Datasheet ntud3127c-d Datasheet

NTUD3127C

Small Signal MOSFET

20 V, 200 mA / −180 mA, Complementary,

1.0 x 1.0 mm SOT−963 Package

Features

• Complementary MOSFET Device

• 1.5 V Gate Voltage Rating

• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely

Thin Environments such as Portable Electronics.

• These are Pb−Free Devices

Applications

• Load Switch with Level Shift

• Optimized for Power Management in Ultra Portable Equipment

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

N−Channel Continuous Drain Current (Note 1)

P−Channel Continuous Drain Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current N−Channel

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.

2. Pulse Test: pulse width v300 ms, duty cycle v2%

= 25°C unless otherwise specified)

J

Symbol Value Unit

DSS

Steady

State

t v 5 s

Steady

State

t v 5 s

Steady

State

t v 5 s

P−Channel

TA = 25°C

TA = 85°C 115

TA = 25°C 200

TA = 25°C −140

TA = 85°C −100

TA = 25°C −180

TA = 25°C P

tp = 10 ms

T

I

DM

STG

T

GS

D

S

D

L

20 V

±8 V

160

125

200

800

−600

−55 to

150

200 mA

260 °C

mA

mW

mA

°C

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V

(BR)DSS

P−Channel

−20 V

N−Channel

20 V

R

Max ID Max

DS(on)

5.0 W @ −4.5 V

7.0 W @ −2.5 V

10 W @ −1.8 V 14 W @ −1.5 V

3.0 W @ 4.5 V

4.0 W @ 2.5 V

6.0 W @ 1.8 V 10 W @ 1.5 V

PINOUT: SOT−963

S

1

G

D

2

1

3

2

Top View

MARKING DIAGRAM

SOT−963

CASE 527AA

S = Specific Device Code M = Date Code

1

ORDERING INFORMATION

Device Package Shipping

NTUD3127CT5G SOT−963

(Pb−Free)

8000 / Tape & Reel

6

5

4

−0.18 A

0.20 A

SM

D

1

G

2

S

2

†

August, 2008 − Rev. 1

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1 Publication Order Number:

NTUD3127C/D

NTUD3127C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State, Minimum Pad (Note 3)

R

q

JA

Junction−to−Ambient – t v 5 s (Note 3) 600

3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.

1000

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter Symbol N/P Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

(BR)DSS

N

P

VGS = 0 V

Zero Gate Voltage Drain Current

N VGS = 0 V, VDS = 5.0 V

I

DSS

P VGS = 0 V, VDS = −5.0 V

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

I

DSS

I

GSS

N VGS = 0 V, VDS = 16 V

P VGS = 0 V, VDS= −16 V −100

N

P −100

VDS = 0 V, VGS = ±5.0 V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Drain−to−Source On Resistance

V

GS(TH)

N

P

N VGS = 4.5 V, ID = 100 mA 1.5 3.0

VGS = V

DS

P VGS = −4.5V, ID = −100 mA 4.0 5.0

N VGS = 2.5 V, ID = 50 mA 2.0 4.0

P VGS = −2.5V, ID = −50 mA 5.0 7.0

N VGS = 1.8 V, ID = 20 mA 3.0 6.0

R

DS(on)

P VGS = −1.8V, ID = −20 mA 6.5 10

N VGS = 1.5 V, ID = 10 mA 4.0 10

P VGS = −1.5 V, ID = −10 mA 7.5 14

N VGS = 1.2 V, ID = 1.0 mA 5.5

P VGS = −1.2 V, ID = −1.0 mA 11.5

Forward Transconductance

g

FS

N VDS = 5.0 V, ID = 125 mA 0.35

P VDS = −5.0 V, ID = −125 mA 0.26

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

C

ISS

OSS

RSS

ISS

OSS

RSS

N

P

f = 1 MHz, VGS = 0 V

VDS = 15 V

f = 1 MHz, VGS = 0 V

V

DS

4. Switching characteristics are independent of operating junction temperatures

= −15 V

ID = 250 mA

ID = −250 mA

20

−20

TJ = 25°C 50

TJ = 85°C 200

TJ = 25°C −50

TJ = 85°C −200

TJ = 25°C

ID = 250 mA

ID = −250 mA

0.4 1.0

−0.4 −1.0

9.0

3.0

2.2

12

2.7

1.0

V

nA

100

nA

100

nA

V

W

S

pF

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2

NTUD3127C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter UnitMaxTypMinTest ConditionN/PSymbol

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

r

d(OFF)

f

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDD = 10 V, ID = 200 mA,

N

P

R

VGS = −4.5 V, VDD = −15 V,

= −180 mA, RG = 2.0 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

N VGS = 0 V, IS = 10 mA

P VGS = 0 V, IS = −10 mA −0.65 −1.0

4. Switching characteristics are independent of operating junction temperatures

= 2.0 W

G

TJ = 25°C

15

24

90

60

20

37

112

97

0.60 1.0

ns

V

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3

NTUD3127C

TYPICAL PERFORMANCE CURVES − N−CHANNEL

0.4 0.4 TJ = 25°C

2.0 V

0.3

VGS = 3 V to 5 V

2.5 V

0.2

1.5 V

0.1

DRAIN CURRENT (AMPS)

D,

I

DRAIN CURRENT (AMPS)

D,

I

1.0 V

0

1

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS

25

34

Figure 1. On−Region Characteristics

15

10

ID = 200 mA

TJ = 25°C

0.3

0.2

0.1

2.5

2.0

1.5

VDS ≥ 5 V

TJ = −55°C

TJ = 25°C

0

1

2

3

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

VGS = 2.5 V

VGS = 4.5 V

TJ = 125°C

4

5

1.0

5

0.5

DRAIN−TO−SOURCE RESISTANCE (W)

0

035

DS(on),

R

1

V

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

2

4

Figure 3. On−Resistance vs. Gate Voltage

1.75

ID = 200 mA

1.5 V

= 4.5 V

GS

1.25

DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on),

R

0.1 0.40.05 0.2 0.350.15

Figure 4. On−Resistance vs. Drain Current and

1000

VGS = 0 V

100

1.0

0.75

DRAIN−TO−SOURCE

0.5

DS(on),

0.25

R

RESISTANCE (NORMALIZED)

0

−50 0−25 25

50 150

75

TJ, JUNCTION TEMPERATURE (°C)

125100

, LEAKAGE (nA)

10

DSS

I

1

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.30.25

ID, DRAIN CURRENT (AMPS)

Gate Voltage

TJ = 150°C

TJ = 125°C

12

1648

20

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−to−Source Leakage Current

vs. Voltage

4

NTUD3127C

TYPICAL PERFORMANCE CURVES − N−CHANNEL

15

VGS = 0 V T

= 25°C

12

J

C

iss

9

6

C, CAPACITANCE (pF)

3

0

02 12

14 16

C

oss

C

rss

1846810

20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Resistive Switching Time

0.2

VGS = 0 V T

= 25°C

J

0.15

1000

VDD = 10 V I

= 200 mA

D

= 4.5 V

V

GS

100

t, TIME (ns)

10

1

1 10 100

, GATE RESISTANCE (OHMS)

R

G

Variation vs. Gate Resistance

t

d(off)

t

f

t

r

t

d(on)

0.1

0.05

, SOURCE CURRENT (AMPS)

S

I

0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Diode Forward Voltage vs. Current

0.60.2

0.80.4

1.0

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5

NTUD3127C

TYPICAL PERFORMANCE CURVES − P−CHANNEL

0.36

0.32

0.28

0.24

0.20

0.16

0.12

0.08

DRAIN CURRENT (AMPS)

D,

I

0.04

0

1

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS

Figure 10. On−Region Characteristics

12

8

VGS = 3.5 V to 5 V

3.0 V

TJ = 25°C

2.5 V

0.36

0.32

0.28

VDS ≥ 5 V

0.24

2.0 V

0.20

0.16

1.5 V

1.0 V

0.12

DRAIN CURRENT (AMPS)

0.08

D,

I

0.04

0

25

34

0

1

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Transfer Characteristics

ID = 180 mA

TJ = 25°C

6

TJ = 25°C

5

4

3

TJ = −55°C

2

VGS = 2.5 V

VGS = 4.5 V

TJ = 25°C

3

TJ = 125°C

4

5

4

2

1

DRAIN−TO−SOURCE RESISTANCE (W)

0

035

DS(on),

R

1

V

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

2

4 0.30.25

Figure 12. On−Resistance vs. Gate Voltage

1.75

ID = 180 mA

1.5 V

= 4.5 V

GS

1.25

DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on),

R

0.1 0.40.05 0.2 0.350.15

Figure 13. On−Resistance vs. Drain Current

1000

VGS = 0 V

100

1.0

0.75

DRAIN−TO−SOURCE

0.5

DS(on),

0.25

R

RESISTANCE (NORMALIZED)

0

−50 0−25 25

50 150

75

TJ, JUNCTION TEMPERATURE (°C)

125100

, LEAKAGE (nA)

10

DSS

I

1

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

and Gate Voltage

TJ = 150°C

TJ = 125°C

12

1648

20

Figure 14. On−Resistance Variation with

Temperature

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Figure 15. Drain−to−Source Leakage Current

vs. Voltage

6

NTUD3127C

TYPICAL PERFORMANCE CURVES − P−CHANNEL

16

C

iss

12

VGS = 0 V

= 25°C

T

14 16

J

C

oss

C

rss

20

1846810

8

C, CAPACITANCE (pF)

4

0

02 12

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 16. Capacitance Variation Figure 17. Resistive Switching Time

0.18

VGS = 0 V

0.16 T

= 25°C

0.14

0.12

0.10

0.08

0.06

0.04

, SOURCE CURRENT (AMPS)

S

I

0.02

J

0

0 0.60.2

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

1000

VDD = 10 V I

= 180 mA

D

= 4.5 V

V

GS

100

t, TIME (ns)

10

1

1 10 100

, GATE RESISTANCE (OHMS)

R

G

Variation vs. Gate Resistance

0.80.4

1.0

t

d(off)

t

f

t

r

t

d(on)

Figure 18. Diode Forward Voltage vs. Current

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7

NTUD3127C

PACKAGE DIMENSIONS

SOT−963

CASE 527AA−01

ISSUE D

D

456

12 3

e

−Y−

A

L

−X−

E

H

E

C

b

6X

X0.08

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.40 0.45 0.50

b 0.10 0.15 0.20 C 0.05 0.10 0.15 D 0.95 1.00 1.05 E 0.75 0.80 0.85

e 0.35 BSC

L 0.05 0.10 0.15

H

E

0.95 1.00 1.05

INCHES

MIN NOM MAX

0.016 0.018 0.020

0.004 0.006 0.008

0.002 0.004 0.006

0.037 0.039 0.041

0.03 0.032 0.034

0.014 BSC

0.002 0.004 0.006

0.037 0.039 0.041

SOLDERING FOOTPRINT*

0.35

0.014

0.90

0.0354

0.20

0.008

0.20

0.008

SCALE 20:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTUD3127C/D

8