Datasheet nttfs4943n-d Datasheet

NTTFS4943N

Power MOSFET

30 V, 41 A, Single N−Channel, m8FL

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• DC−DC Converters

• Power Load Switch

• Notebook Battery Management

• Motor Control

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R

Power Dissipation R (Note 1)

Continuous Drain Current R (Note 1)

Power Dissipation

≤ 10 s (Note 1)

R

q

JA

Continuous Drain Current R

Power Dissipation

(Note 2)

R

q

JA

Continuous Drain Current R

Power Dissipation

(Note 1)

R

q

JC

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Drain to Source dV/dt dV/dt 6.0 V/ns

Single Pulse Drain−to−Source Avalanche Energy (T

= 25°C, VDD = 50 V, VGS = 10 V,

J

= 25 Apk, L = 0.1 mH, RG = 25 W)

I

L

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

to Minimize Conduction Losses

DS(on)

= 25°C unless otherwise stated)

J

Parameter

(Note 1)

q

JA

q

JA

≤ 10 s

q

JA

Steady

State

(Note 2)

q

JA

(Note 1)

q

JC

TA = 25°C, tp = 10 ms

Symbol Value Unit

DSS

GS

TA = 25°C

TA = 85°C 9.2

TA = 25°C P

TA = 25°C

TA = 85°C 13

TA = 25°C P

TA = 25°C

TA = 85°C 5.7

TA = 25°C P

TC = 25°C

TC = 85°C 29

TC = 25°C P

I

D

I

D

I

D

I

D

I

DM

T

stg

S

E

AS

T

L

30 V

±20 V

12.7

2.17 W

18

4.35 W

8.0

0.84 W

41

22.3 W

125 A

−55 to +150

25 A

31 mJ

260 °C

A

°C

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V

(BR)DSS

30 V

R

DS(on)

7.2 mW @ 10 V

11 m W @ 4.5 V

N−Channel MOSFET

D (5−8)

G (4)

MAX ID MAX

41 A

S (1,2,3)

MARKING DIAGRAM

1

WDFN8

(m8FL)

CASE 511AB

4943 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

1

S

4943

S

AYWWG

S G

G

D D D D

ORDERING INFORMATION

Device Package Shipping

NTTFS4943NTAG WDFN8

(Pb−Free)

NTTFS4943NTWG WDFN8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1500/Tape & Reel

5000/Tape & Reel

†

January, 2011 − Rev. 1

1 Publication Order Number:

NTTFS4943N/D

NTTFS4943N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – Steady State (Note 4)

Junction−to−Ambient – (t ≤ 10 s) (Note 3)

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm

2

, 1 oz. Cu).

R

q

JC

R

q

JA

R

q

JA

R

q

JA

5.6

57.5

149.2

28.7

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

V

= 24 V

DS

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance R

V

GS(TH)

V

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V

VGS = 4.5 V

Forward Transconductance g

FS

VDS = 1.5 V, ID = 15 A 29.3 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

iss

oss

rss

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1.0 MHz, VDS = 15 V

VGS = 4.5 V, VDS = 15 V, ID = 20 A

VGS = 10 V, VDS = 15 V, ID = 20 A 20.4 nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

VGS = 4.5 V, VDS = 15 V,

= 15 A, RG = 3.0 W

I

D

5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

30 V

15 mV/°C

TJ = 25°C 1.0 mA

TJ = 125°C 10

1.2 2.2 V

4.0 mV/°C

ID = 20 A 5.1 7.2 mW

ID = 10 A 5.1

ID = 20 A 7.6 11

ID = 10 A 7.5

1386

440

23

9.2

2.3

4.5

1.35

10.6

21

17.7

2.96

pF

nC

ns

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2

NTTFS4943N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter UnitMaxTypMinTest ConditionSymbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

VGS = 10 V, VDS = 15 V,

= 15 A, RG = 3.0 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 20 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 20 A

PACKAGE PARASITIC VALUES

Source Inductance

Drain Inductance L

Gate Inductance L

Gate Resistance R

L

S

D

G

TA = 25°C

5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

7.6

19.5

22

2.6

TJ = 25°C 0.88 1.2

TJ = 125°C 0.78

26.2

13.2

13

17 nC

0.38

0.054

1.3

1.1 2.0

ns

V

ns

nH

W

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3

NTTFS4943N

0

TYPICAL CHARACTERISTICS

, DRAIN CURRENT (A)R

D

I

0.060

0.050

0.040

0.030

70

60

50

40

30

20

10

10 V

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

4.5 V

4.0 V

TJ = 25°C

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

2.6 V

2.4 V

4

53210

60 55

VDS ≥ 10 V 50

45

40 35

30

25

20

, DRAIN CURRENT (A)

15

D

I

10

5

0

TJ = 125°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ = 25°C

TJ = −55°C

2.5

4.03.53.02.01.51.0

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

ID = 20 A T

= 25°C

J

0.010

0.009

0.008

0.007

TJ = 25°C

VGS = 4.5 V

0.020

0.010

, DRAIN−TO−SOURCE RESISTANCE (W)

0.000

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. V

1.9

1.8

ID = 20 A

1.7

V

= 10 V

GS

1.6

1.5

1.4

1.3

1.2

1.1

1.0

, DRAIN−TO−SOURCE

0.9

0.8

DS(on)

0.7

RESISTANCE (NORMALIZED)

0.6

0.5

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

50

Temperature

GS

0.006 VGS = 10 V

0.005

, DRAIN−TO−SOURCE RESISTANCE (W)

0.004

987106542

DS(on)

R

10

705030 90604020

803 10

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10,000

, LEAKAGE (nA)

DSS

I

15012510075250−25−50

VGS = 0 V

TJ = 150°C

1000

TJ = 125°C

100

TJ = 85°C

10

30252015105

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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4

NTTFS4943N

TYPICAL CHARACTERISTICS

1800

1600

1400

1200

1000

800

600

C, CAPACITANCE (pF)

400

200

0

1000

VDD = 15 V I V

100

t, TIME (ns)

10

1

Figure 9. Resistive Switching Time Variation

1000

11 VGS = 0 V T

= 25°C

C

iss

J

10

9

8

TJ = 25°C

QT

7

6

5

C

oss

4

Qgs

3

Qgd

2

, GATE−TO−SOURCE VOLTAGE (V)

C

rss

25201510 3050

1

GS

0

V

616

VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

30

VGS = 0 V

= 15 A

D

GS

= 10 V

t

d(off)

25

20

t

f

t

r

t

d(on)

15

10

, SOURCE CURRENT (A)

S

I

5

TJ = 125°C

0

100101

V

RG, GATE RESISTANCE (W)

, SOURCE−TO−DRAIN VOLTAGE (V)

SD

Figure 10. Diode Forward Voltage vs. Current

vs. Gate Resistance

40

TJ = 25°C

VDD = 15 V V

= 10 V

GS

= 20 A

I

D

181412108420

0.90.80.7 1.00.60.50.4

ID = 25 A

20

100

10

1

, DRAIN CURRENT (A)

D

0.1

I

VGS = 20 V Single Pulse TC = 25°C

R

DS(on)

Limit Thermal Limit Package Limit

0.01

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

30

10 ms

100 ms

1 ms

20

10 ms

dc

10

, SINGLE PULSE DRAIN−TO−

AS

E

SOURCE AVALANCHE ENERGY (mJ)

0

1001010.01

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5

150125100755025

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

100

R(t) (°C/W)

0.1

10

10%

1

NTTFS4943N

TYPICAL CHARACTERISTICS

Duty Cycle = 50%

20%

5%

2%

1%

Single Pulse

0.01

0.010.0010.00010.000010.000001

PULSE TIME (sec)

0.1 1 10 100 1000

Figure 13. Thermal Response

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6

NTTFS4943N

PACKAGE DIMENSIONS

WDFN8 3.3x3.3, 0.65P

CASE 511AB−01

ISSUE B

0.05

0.10 C

8X

A0.10 BC

c

G

D

D1

78

1234

TOP VIEW

SIDE VIEW

b

L

14

E2

8

D2

BOTTOM VIEW

56

5

2X

E1

e/2

K

C

0.20

A

B

E

A

DETAIL A

M

L1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH

2X

0.20 C

4X

q

c

6X

e

A1

C

SEATING

PLANE

DETAIL A

PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

A1 0.00 −−−

D1 2.95 3.05 D2 1.98 2.11

E1 2.95 3.05 E2 1.47 1.60

L1 0.06 0.13

MILLIMETERS

A 0.70 0.75

b 0.23 0.30 c 0.15 0.20

D

E

e 0.65 BSC G 0.30 0.41 K 0.64 −−−

L 0.30 0.43

M 1.40 1.50

q 0 −−−

3.30 BSC

_

MAX

0.80

0.05

0.40

0.25

3.15

2.24

3.15

1.73

0.51

−−−

0.56

0.20

1.60 12

_

INCHES

MIN NOM

0.028 0.030

0.000 −−−

0.009 0.012

0.006 0.008

0.130 BSC

0.116 0.120

0.078 0.083

0.130 BSC

0.116 0.120

0.058 0.063

0.026 BSC

0.012 0.016

0.025 −−−

0.012 0.017

0.002 0.005

0.055 0.059 0 −−−

_

MAX

0.031

0.002

0.016

0.010

0.124

0.088

0.124

0.068

0.020

−−−

0.022

0.008

0.063 12

_

SOLDERING FOOTPRINT*

0.75

PACKAGE OUTLINE

0.57

8X

0.650.42 PITCH

4X

0.66

3.60

2.30

0.47

2.37

3.46

DIMENSION: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTTFS4943N/D

7