Datasheet nttfs4937n-d Datasheet

NTTFS4937N

Power MOSFET

30 V, 75 A, Single N−Channel, m8FL

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Low−Side DC−DC Converters

• Power Load Switch

• Notebook Battery Management

• Motor Control

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R

Power Dissipation R (Note 1)

Continuous Drain Current R (Note 1)

Power Dissipation

≤ 10 s (Note 1)

R

q

JA

Continuous Drain Current R

Power Dissipation

(Note 2)

R

q

JA

Continuous Drain Current R

Power Dissipation

(Note 1)

R

q

JC

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Drain to Source dV/dt dV/dt 6.0 V/ns

Single Pulse Drain−to−Source Avalanche Energy (T

= 25°C, VDD = 50 V, VGS = 10 V,

J

= 37 Apk, L = 0.1 mH, RG = 25 W)

I

L

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

to Minimize Conduction Losses

DS(on)

= 25°C unless otherwise stated)

J

Parameter

(Note 1)

q

JA

q

JA

≤ 10 s

q

JA

Steady

State

(Note 2)

q

JA

(Note 1)

q

JC

TA = 25°C, tp = 10 ms

Symbol Value Unit

DSS

GS

TA = 25°C

TA = 85°C 12

TA = 25°C P

TA = 25°C

TA = 85°C 18

TA = 25°C P

TA = 25°C

TA = 85°C 8.0

TA = 25°C P

TC = 25°C

TC = 85°C 54

TC = 25°C P

I

D

I

D

I

D

I

D

I

DM

T

stg

S

E

AS

T

L

30 V

±20 V

17

2.24 W

25

4.6 W

11

0.86 W

75

43.1 W

230 A

−55 to +150

48 A

68.5 mJ

260 °C

A

°C

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V

(BR)DSS

30 V

R

DS(on)

4.5 mW @ 10 V

7.0 mW @ 4.5 V

N−Channel MOSFET

D (5−8)

G (4)

MAX ID MAX

75 A

S (1,2,3)

MARKING DIAGRAM

1

WDFN8

(m8FL)

CASE 511AB

4937 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

1

S

4937

S

AYWWG

S G

G

D D D D

ORDERING INFORMATION

Device Package Shipping

NTTFS4937NTAG WDFN8

(Pb−Free)

NTTFS4937NTWG WDFN8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1500/Tape & Reel

5000/Tape & Reel

†

January, 2011 − Rev. 1

1 Publication Order Number:

NTTFS4937N/D

NTTFS4937N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – Steady State (Note 4)

Junction−to−Ambient – (t ≤ 10 s) (Note 3)

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm

2

, 1 oz. Cu).

R

q

JC

R

q

JA

R

q

JA

R

q

JA

2.9

55.9

144.6

27.4

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

V

= 24 V

DS

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance R

V

GS(TH)

V

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V

VGS = 4.5 V

Forward Transconductance g

FS

VDS = 1.5 V, ID = 15 A 37 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

iss

oss

rss

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1.0 MHz, VDS = 15 V

VGS = 4.5 V, VDS = 15 V, ID = 20 A

VGS = 10 V, VDS = 15 V, ID = 20 A 35.5 nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

VGS = 4.5 V, VDS = 15 V,

= 15 A, RG = 3.0 W

I

D

5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

30 V

15 mV/°C

TJ = 25°C 1.0 mA

TJ = 125°C 10

1.2 1.6 2.2 V

4.0 mV/°C

ID = 20 A 3.4 4.5 mW

ID = 10 A 3.4

ID = 20 A 4.9 7.0

ID = 10 A 4.8

2540

893

26

15.7

4.0

7.6

1.9

13.9

21.2

7.4

pF

nC

ns

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2

NTTFS4937N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter UnitMaxTypMinTest ConditionSymbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

VGS = 10 V, VDS = 15 V,

= 15 A, RG = 3.0 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 20 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 20 A

PACKAGE PARASITIC VALUES

Source Inductance

Drain Inductance L

Gate Inductance L

Gate Resistance R

L

S

D

G

TA = 25°C

5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

9.8

19.8

28.8

4.0

TJ = 25°C 0.85 1.1

TJ = 125°C 0.75

38.5

20.2

18.2

33 nC

0.38

0.054

1.3

1.1 2.0

ns

V

ns

nH

W

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3

NTTFS4937N

TYPICAL CHARACTERISTICS

100

10 V

90

80

70

60

50

40

30

, DRAIN CURRENT (A)

D

20

I

10

0

4.5 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

VGS = 4.0 V

2.4 V

TJ = 25°C

43.52.51.50.5 4.5

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.060

ID = 20 A T

GS

= 25°C

J

0.050

0.040

0.030

0.020

0.010

, DRAIN−TO−SOURCE RESISTANCE (W)

0.000

DS(on)

2345678910

R

VGS (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. V

2.0

1.9 ID = 20 A

1.8 V

= 10 V

GS

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

, DRAIN−TO−SOURCE

0.8

0.7

DS(on)

R

0.6

RESISTANCE (NORMALIZED)

0.5

0.4

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

2.6 V

90

80

70

60

50

40

30

, DRAIN CURRENT (A)

20

D

I

10

53210

0

0.0070

0.0065

0.0060

0.0055

0.0050

0.0045

0.0040

0.0035

, DRAIN−TO−SOURCE RESISTANCE (W)

0.0030 10 150160

DS(on)

R

Figure 4. On−Resistance vs. Drain Current and

10,000

1000

, LEAKAGE (nA)

100

DSS

I

10

VDS ≥ 10 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

2.5

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

20 30 40 50 60 70 80 90 100110120130140

Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 125°C

TJ = 85°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

4.03.53.02.01.51.0

30252015105

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4

NTTFS4937N

TYPICAL CHARACTERISTICS

2800

C

2600

iss

2400 2200 2000 1800 1600 1400 1200

C

oss

VGS = 0 V T

= 25°C

J

1000

800

C, CAPACITANCE (pF)

600 400 200

0

C

rss

2520151050

VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

1000

VDD = 15 V I

= 15 A

D

= 10 V

V

GS

100

t, TIME (ns)

10

1

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

1000

100

10

VGS = 20 V

1

Single Pulse

, DRAIN CURRENT (A)

D

0.1

I

R

DS(on)

TC = 25°C

Limit Thermal Limit Package Limit

0.01

0.01 1 10 100

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

t

d(off)

t

f

t

r

t

d(on)

10 ms

100 ms

1 ms

10 ms

dc

11

10

9

8

7

6

5

4

3

2

, GATE−TO−SOURCE VOLTAGE (V)

1

GS

0

V

30

0 2 4 6 8 101214161820222426283032

30

25

20

15

10

, SOURCE CURRENT (A)

S

I

5

0

100101

70

60

50

40

30

20

, SINGLE PULSE DRAIN−TO−

10

AS

E

SOURCE AVALANCHE ENERGY (mJ)

0

QT

TJ = 25°C

Qgd

Qgs

VDD = 15 V V

= 10 V

GS

= 20 A

I

D

Drain−to−Source Voltage vs. Total Charge

VGS = 0 V

TJ = 125°C

TJ = 25°C

0.90.80.7 1.00.60.50.4

V

, SOURCE−TO−DRAIN VOLTAGE (V)

SD

Figure 10. Diode Forward Voltage vs. Current

ID = 37 A

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

150125100755025

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5

100

10

1

R(t) (°C/W)

0.1

0.01

Duty Cycle = 50%

20% 10%

5%

2%

1%

Single Pulse

NTTFS4937N

TYPICAL CHARACTERISTICS

0.010.0010.00010.000010.000001

PULSE TIME (sec)

Figure 13. Thermal Response

0.1 1 10 100 1000

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6

NTTFS4937N

PACKAGE DIMENSIONS

WDFN8 3.3x3.3, 0.65P

CASE 511AB−01

ISSUE B

0.05

0.10 C

8X

A0.10 BC

c

G

D

D1

78

1234

TOP VIEW

SIDE VIEW

b

L

14

E2

8

D2

BOTTOM VIEW

56

5

2X

E1

e/2

C

0.20

A

B

E

A

DETAIL A

K

M

L1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH

2X

0.20 C

4X

q

c

6X

e

A1

C

SEATING

PLANE

DETAIL A

PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

A1 0.00 −−−

D1 2.95 3.05 D2 1.98 2.11

E1 2.95 3.05 E2 1.47 1.60

L1 0.06 0.13

MILLIMETERS

A 0.70 0.75

b 0.23 0.30 c 0.15 0.20

D

E

e 0.65 BSC G 0.30 0.41 K 0.64 −−−

L 0.30 0.43

M 1.40 1.50

q 0 −−−

3.30 BSC

_

MAX

0.80

0.05

0.40

0.25

3.15

2.24

3.15

1.73

0.51

−−−

0.56

0.20

1.60 12

_

INCHES

MIN NOM

0.028 0.030

0.000 −−−

0.009 0.012

0.006 0.008

0.130 BSC

0.116 0.120

0.078 0.083

0.130 BSC

0.116 0.120

0.058 0.063

0.026 BSC

0.012 0.016

0.025 −−−

0.012 0.017

0.002 0.005

0.055 0.059 0 −−−

_

MAX

0.031

0.002

0.016

0.010

0.124

0.088

0.124

0.068

0.020

−−−

0.022

0.008

0.063 12

_

SOLDERING FOOTPRINT*

0.75

PACKAGE OUTLINE

0.57

8X

0.650.42 PITCH

4X

0.66

3.60

2.30

0.47

2.37

3.46

DIMENSION: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTTFS4937N/D

7