Datasheet nttd4401f Datasheet

NTTD4401F

FETKYt Power MOSFET and Schottky Diode

−20 V, −3.3 A P−Channel with 20 V,

1.0 A Schottky Diode, Micro8t Package

The FETKY product family incorporates low R MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier Diodes to offer high e fficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications.

Features

• Low V

and Low Leakage Schottky Diode

F

• Lower Component Placement and Inventory Costs along with Board

Space Savings

• Logic Level Gate Drive – Can be Driven by Logic ICs

• Pb−Free Package is Available

Applications

• Buck Converter

• Synchronous Rectification

• Low Voltage Motor Control

• Load Management in Battery Packs, Chargers, Cell Phones, and

other Portable Products

MOSFET MAXIMUM RATINGS (T

Rating

Drain−to−Source Voltage V Gate−to−Source Voltage V Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 2)

Power Dissipation

(Note 2)

Pulsed Drain

Current

Operating Junction and

Storage Temperature

Single Pulse Drain−to−Source Avalanche

Energy Starting T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size

(Cu area = 0.172 in sq).

Steady

State

Steady

State

t = 10 ms

= 25°C (t v 10 s)

A

= 25°C unless otherwise noted)

A

Symbol Value Unit

DSS

GS

T

= 25°C

A

T

= 100°C −2.1

A

T

= 25°C P

A

T

= 25°C

A

T

= 100°C −1.5

A

T

= 25°C P

A

I

DM

TJ, T

EAS 150 mJ

T

DS(on)

D

STG

L

, true logic l evel

−20 V

$10 V

−3.3

1.42 W

−2.4

0.78 W

−10 A

−55 to 150

260 °C

A

°C

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MOSFET PRODUCT SUMMARY

V

(BR)DSS

−20 V

70 mW @ −4.5 V

100 mW @ −2.7 V

R

DS(on)

Typ

ID Max

−3.3 A

−2.7 A

SCHOTTKY DIODE SUMMARY

VR Max VF MaxIF Max

20 V

G

P−Channel MOSFET

2.0 A

S

D

600 mV @ I

Schottky Diode

A

C

= 2.0 A

F

MARKING DIAGRAM &

PIN ASSIGNMENT

CCDD

8

1

Micro8

CASE 846A

BG = Specific Device Code WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

8

WW

BG G

G

1

AASG

ORDERING INFORMATION

Device Package Shipping

NTTD4401FR2 Micro8 4000/Tape & Reel

NTTD4401FR2G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Micro8

(Pb−Free)

4000/Tape & Reel

†

April, 2007 − Rev. 6

1 Publication Order Number:

NTTD4401F/D

NTTD4401F

SCHOTTKY DIODE MAXIMUM RATINGS (T

Rating

= 25°C unless otherwise noted)

A

Symbol Value Unit

Peak Repetitive Reverse Voltage V 20 V Average Forward Current (Rated VR, TA = 100°C) I Peak Repetitive Forward Current (Note 3) I Non−Repetitive Peak Surge Current (Note 4) I

O FRM FSM

1.0 A

2.0 A 20 A

THERMAL RESISTANCE RATINGS

FET Schottky

Rating Symbol

Junction−to−Ambient – Steady State (Note 5) Junction−to−Ambient – Steady State (Note 6)

MOSFET ELECTRICAL CHARACTERISTICS (T

Characteristic

Symbol Test Condition Min Typ Max Unit

= 25°C unless otherwise noted)

A

R

q

JA

R

q

JA

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

Zero Gate Voltage Drain Current (Note 7) I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

V

GS

V

= 0 V, TJ = 125°C, V

GS

V

DS

V

= 0 V −20 − − V

GS

= 0 V, V

= −16 V

DS

= −16 V

DS

= ±10 V − − ±100 nA

GS

ON CHARACTERISTICS

Gate Threshold Voltage Negative Threshold

Temperature Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

V

GS

V

GS

V

GS

V

DS

= VDS, I

= −250 mA

D

− − 2.5 − mV/°C

= −4.5 V, I = −2.5 V, I

= −10 V, I

= −3.3 A − 70 90

D

= −1.2 A − 100 150

D

= −2.7 A − 4.2 − S

D

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Gate−to−Source Gate Charge Q Gate−to−Drain “Miller’’ Charge Q

C

ISS OSS RSS

G(TOT)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

DS

V

= −4.5 V, V

GS

I

D

= −16 V

DS

= −3.3 A

= −16 V,

SWITCHING CHARACTERISTICS

Turn−On Delay Time Rise Time t Turn−Off Delay Time t Fall Time t

t

d(ON)

r

d(OFF)

f

V

GS

I

D

= −4.5 V, V = −3.3 A, R

= −10 V,

DD

= 6.0 W

G

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage Reverse Recovery Time t Charge Time t Discharge Time t Reverse Recovery Charge Q

3. Rated VR, square wave, 20 kHz, T

4. Surge applied at rated load conditions, half−wave, single phase, 60 Hz.

= 105°C.

A

V

SD RR

a b

RR

V

GS

V

= 0 V, dIS/dt = 100 A/ms,

GS

= 0 V, I

= −2.0 A − −0.88 −1.0 V

S

I

= −3.3 A

S

− − 0.025 0.05 nC

5. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

6. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq).

7. Body diode leakage current.

Max

88 135 °C/W

160 250 °C/W

− − −1.0

− − −25

−0.5 − −1.5 V

− 550 750

− 200 300

− 50 175

− 10 18

− 1.5 3.0

− 5.0 10

− 11 20

− 35 65

− 33 60

− 29 55

− 37 50

− 16 −

− 21 −

Unit

mA

mW

pF

nC

ns

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2

NTTD4401F

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Characteristic

Reverse Breakdown Voltage B Reverse Leakage Current I

Forward Voltage V

Symbol Test Condition Min Typ Max Unit

V

R

F

= 25°C unless otherwise noted)

J

V

= 20 V

R

I

= 1.0 A

F

I

= 2.0 A

F

Voltage Rate of Change dV/dt V

I

= 1.0 mA 20 − − V

R

TA = 25°C − − 0.05

T

= 125°C − − 10

A

T

= 25°C − − 0.5

A

T

= 125°C − − 0.39

A

T

= 25°C − − 0.6

A

T

= 125°C − − 0.53

A

= 20 V − 10,000 −

R

mA

V

V/ms

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3

NTTD4401F

.5

5

4

−I

DRAIN CURRENT (AMPS)R

DRAIN−TO−SOURCE

TYPICAL ELECTRICAL CHARACTERISTICS

VGS = −2.1 V

VGS = −10 V V

3

2

= −4.5 V

GS

VGS = −2.5 V

VGS = −1.9 V

VGS = −1.7 V

1

D,

VGS = −1.5 V

0

6

TJ = 25°C

8

VDS > = −10 V

4

3

2

TJ = 25°C

DRAIN CURRENT (AMPS)

1

D,

TJ = 100°C

−I

TJ = 55°C

0

1

1.5 2

2.54210

30

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.2

0.15

0.1

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.12

0.1

0.08

TJ = 25°C

VGS = −2.7 V

TJ = 25°C

VGS = −4.5 V

0.05

DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on),

R

−V

GS,

Figure 3. On−Resistance vs. Gate−to−Source

1.6 ID = −3.3 A

V

= −4.5 V

1.4

1.2

0.8

DS(on),

RESISTANCE (NORMALIZED)

0.6

GS

1

−25 0 25 75

46

GATE−TO−SOURCE VOLTAGE (VOLTS)

Voltage

12510050

TJ, JUNCTION TEMPERATURE (°C)

0.06

DRAIN−TO−SOURCE RESISTANCE (W)

0.04 1

8

DS(on),

R

1.5 2 2.5 3.5

−I

DRAIN CURRENT (AMPS)

D,

4

432

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1000

VGS = 0 V

TJ = 125°C

100

TJ = 100°C

10

TJ = 25°C

LEAKAGE (nA)

1

DSS,

−I

0.1

0.01

150−50

4 8 12 16

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V

DS,

200

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−to−Source Leakage Current

vs. Voltage

4

NTTD4401F

t, TIME (ns)

0

−I

SOURCE CURRENT (AMPS)

C, CAPACITANCE (pF)

)

TYPICAL ELECTRICAL CHARACTERISTICS

1500

1200

VDS = 0 V

C

iss

VGS = 0 V

TJ = 25°C

900

C

rss

C

600

300

0

5051015

−V

GS

DS

iss

C

oss

C

rss

2010

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDD = −10 V

= −1.2 A

I

D

= −2.7 V

V

GS

5

4

3

2

1

GATE−TO−SOURCE VOLTAGE (VOLTS)

0

GS,

−V

QT

V

GS

Q1

Q2

V

DS

246 10 14

Q

, TOTAL GATE CHARGE (nC)

g

80

ID = −3.3 A

T

= 25°C

J

12

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

100

t

d (off)

t

r

20 18 16 14 12 10 8 6 4 2

DRAIN−TO−SOURCE VOLTAGE (VOLTS

0

DS,

−V

t

f

t

100

10

t

d (off)

t

d (on)

r

1.0 GATE RESISTANCE (W)

R

G,

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

2

10

t, TIME (ns)

t

f

VDD = −10 V

= −3.3 A

I

D

= −4.5 V

V

GS

1.0

10010

R

G,

101.0

GATE RESISTANCE (W)

Figure 10. Resistive Switching Time Variation

vs. Gate Resistance

d (on)

10

VGS = 0 V

1.6

1.2

= 25°C

J

I

S

di/dt

t

a

t

rr

t

b

T

TIME

0.8

I

S

0.25 I

S

t

p

0.4

S,

0

SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−V

SD,

Figure 11. Diode Forward Voltage

vs. Current

0.90.80.70.60.50.4

1

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5

Figure 12. Diode Reverse Recovery Waveform

NTTD4401F

1

D = 0.5

0.2

0.1

0.05

0.02

EFFECTIVE TRANSIENT THERMAL RESPONSE

thja(t),

R

Single Pulse

0.01 1E−03 1E−02 1E−01 1E+00 1E+03 1E+02 1E+03

0.01

0.0125 W 0.0563 W 0.110 W 0.273 W 0.113 W 0.436 W

0.021 F 0.137 F 1.15 F 2.93 F 152 F

Normalized to R

t, TIME (s)

at Steady State (1 inch pad)

∅

ja

261 F

Figure 13. FET Thermal Response

TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS

10

1.0

0.1

, INSTANTANEOUS FORWARD CURRENT (AMPS)

F

I

TJ = 125°C

85°C 25°C

−40 °C

0.40.2 0.3 0.5 0.6 0.8 0.9 0.2 0.4 0.6 0.8

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

V

F

0.7 1.00.1

1.0

0.1

, INSTANTANEOUS FORWARD CURRENT (AMPS)

F

I

85°C

25°C

1.0 1.2

, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

V

F

Figure 14. Typical Forward Voltage Figure 15. Maximum Forward Voltage

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6

1.40

NTTD4401F

TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS

1E−2

1E−3

1E−4

1E−5

, REVERSE CURRENT (AMPS)

1E−6

R

I

1E−7

1000

100

C, CAPACITANCE (pF)

10

1E−1

TJ = 125°C

85°C

25°C

5.0 10

V

, REVERSE VOLTAGE (VOLTS)

R

1E−2

1E−3

1E−4

1E−5

, MAXIMUM REVERSE CURRENT (AMPS)

R

I

15 200

1E−6

5.0 10

V

, REVERSE VOLTAGE (VOLTS)

R

TJ = 125°C

25°C

15 200

Figure 16. Typical Reverse Current Figure 17. Maximum Reverse Current

TYPICAL CAPACITANCE AT 0 V = 170 pF

5.0 10 60 80 100 120 140 160

, REVERSE VOLTAGE (VOLTS)

V

R

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

O

I , AVERAGE FORWARD CURRENT (AMPS)

15 200

0

200

dc

SQUARE WAVE

Ipk/Io = p

Ipk/Io = 5.0

Ipk/Io = 10

Ipk/Io = 20

40

TA, AMBIENT TEMPERATURE (°C)

FREQ = 20 kHz

Figure 18. Typical Capacitance Figure 19. Current Derating

0.7

0.6

0.5

0.4

0.3

0.2

0.1

, AVERAGE POWER DISSIPATION (WATTS)P

FO

Ipk/Io = 20

0

Ipk/Io = 10

, AVERAGE FORWARD CURRENT (AMPS)

I

O

Ipk/Io = p

Ipk/Io = 5.0

0.5

SQUARE

WAVE

1.0 1.5

dc

2.0

Figure 20. Forward Power Dissipation

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NTTD4401F

PACKAGE DIMENSIONS

Micro8t

CASE 846A−02

ISSUE G

−T−

0.038 (0.0015)

PIN 1 ID

SEATING PLANE

DD

H

E

e

E

8 PL

b

0.08 (0.003) A

M

T

S

B

S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED

0.15 (0.006) PER SIDE.

4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.

5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.

DIMAMIN NOM MAX MIN

A1 0.05 0.08 0.15 0.002

b 0.25 0.33 0.40 0.010 c 0.13 0.18 0.23 0.005 D 2.90 3.00 3.10 0.114 E 2.90 3.00 3.10 0.114 e 0.65 BSC L 0.40 0.55 0.70 0.016

H

E

MILLIMETERS

−− −− 1.10 −−

4.75 4.90 5.05 0.187 0.193 0.199

INCHES

NOM MAX

−− 0.043

0.003 0.006

0.013 0.016

0.007 0.009

0.118 0.122

0.026 BSC

0.021 0.028

A

A1

c

L

SOLDERING FOOTPRINT*

8X

1.04

0.041

0.38

0.015

8X

6X

0.0256

3.20

0.126

0.65

0.167

4.24

SCALE 8:1

5.28

0.208

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

FETKY and Micro8 are registered trademarks of International Rectifier Corporation.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTTD4401F/D

8