Datasheet nts4101p Datasheet

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Page 1

NTS4101P

Power MOSFET

−20 V, −1.37 A, Single P−Channel, SC−70

Features

• Leading −20 V Trench for Low R

• −2.5 V Rated for Low Voltage Gate Drive

• SC−70 Surface Mount for Small Footprint (2x2 mm)

• Pb−Free Package is Available

Applications

• High Side Load Switch

• Charging Circuit

• Single Cell Battery Applications such as: Cell Phones,

Digital Cameras, PDAs

DS(on)

(BR)DSS

−20 V

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Typ ID Max

DS(on)

83 mW @ −4.5 V

88 mW @ −3.6 V

104 mW @ −2.5 V

P−Channel MOSFET

−1.37 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode), Continuous I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

= 25°C unless otherwise stated)

Symbol Value Units

DSS

Steady

State

Steady

State

TA = 25°C

TA = 70°C −0.62

TA = 25°C P

tp = 10 ms

STG

−20 V

±8 V

−1.37

0.329 W

−4.0 A

−55 to

150

−0.5 A

260 °C

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Units

Junction−to−Ambient – Steady State (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

380 °C/W

MARKING DIAGRAM &

PIN ASSIGNMENT

SC−70/SOT−323

CASE 419

STYLE 8

TT = Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

TT M G

ORDERING INFORMATION

Device Package Shipping

†

April, 2011 − Rev. 3

NTS4101PT1 SOT−323 3000/Tape & Reel

NTS4101PT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1 Publication Order Number:

SOT−323

(Pb−Free)

3000/Tape & Reel

NTS4101P/D

Page 2

NTS4101P

ELECTRICAL CHARACTERISTICS (T

Parameter

=25°C unless otherwise stated)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

= 0 V, I

= 0 V,

= −16 V

= 0 V, V

= −250 mA

= ±8 V ±100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V

Negative Threshold

Temperature Coefficient

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance G

GS(TH)

DS(on)

= VDS, ID = −250 mA

= −4.5 V, I

= −3.6 V, I

VGS = −2.5 V, I

= −5.0 V, I

= −1.0 A 83 120

= −0.7 A 88 130

= −0.3 A 104 160

= −1.3 A 5.2 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= −4.5 V, V

= −20 V

= −1.0 A

= −4.5 V,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

= −4.5 V, V

= −1.0 A, R

= −4.0 V,

= 6.2 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time T

Discharge Time T

Reverse Recovery Charge Q

= 0 V,

= −0.3 A

= 0 V, dISD/dt = 100 A/ms,

= −1.0 A

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

−20 −24.5 V

−13.7 mV/°C

= 25°C −1.0 mA

= 70°C −5.0

−0.45 −0.64 −1.5 V

2.7 mV/°C

603 840

90 125

62 85

6.4 9.0

0.7

1.0

1.5

6.2 12

14.9 25

26 40

18 30

= 25°C −0.61 −1.2

= 125°C −0.5

10.9 20

7.1

3.8

4.25 nC

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Page 3

NTS4101P

TYPICAL CHARACTERISTICS

VGS = −4.5 V

−3.5 V

−3.0 V

−2.5 V

−2.2 V

, DRAIN CURRENT (A)

−I

−2.0 V TJ = 25°C

−1.8 V

−1.6 V

−1.4 V

−1.2 V

−1.0 V

024 68

, DRAIN−TO−SOURCE VOLTAGE (V)

−V

Figure 1. On−Region Characteristics

0.16 VGS = −4.5 V

0.12

0.08

TJ = 125°C

= 25°C

VDS w −10 V

, DRAIN CURRENT (A)

−I

TJ = 125°C

TJ = 25°C

TJ = −55°C

0 0.4 0.8 1.2 2.4

−V

, GATE−TO−SOURCE VOLTAGE (V)

1.6 2.0

Figure 2. Transfer Characteristics

0.16 VGS = −3.6 V

TJ = 125°C

0.12

= 25°C

0.08

TJ = −55°C

0.04

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

01 3 5

246

−ID, DRAIN CURRENT (A)

Figure 3. On−Resistance versus Drain Current

and Temperature

1.5 ID = −1.0 A

= −4.5 V

1.3

1.1

(NORMALIZED)

0.9

, DRAIN−TO−SOURCE RESISTANCE

DS(on)

0.7

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

TJ = −55°C

0.04

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

01 3 5

246

−ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Temperature

1000

800

ISS

600

400

C, CAPACITANCE (pF)

200

OSS

RSS

04 8121620

−DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C VGS = 0 V

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Capacitance Variation

Page 4

NTS4101P

TYPICAL CHARACTERISTICS

, GATE−TO−SOURCE VOLTAGE (V)

−V 046

Qg, TOTAL GATE CHARGE (nC)

ID = −1.0 A T

= 25°C

Figure 7. Gate−to−Source and Drain−to−Source

Voltage versus Total Charge

VGS = 0 V

, SOURCE CURRENT (A)

−I

0 0.2 0.4

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

TJ = 125°C

Figure 8. Diode Forward Voltage versus

TJ = 25°C

0.6 1

Current

0.8

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Page 5

NTS4101P

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE N

0.05 (0.002)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

A1 0.00 0.05 0.10 0.000 A2 0.70 REF

b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 D 1.80 2.10 2.20 0.071 E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047

STYLE 8:

PIN 1. GATE

MILLIMETERS

0.80 0.90 1.00 0.032

0.65 BSC

0.38

0.20 0.56

2.00 2.10 2.40 0.079 0.083 0.095

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.035 0.040

0.002 0.004

0.028 REF

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

0.026 BSC

0.015

0.008 0.022

SOLDERING FOOTPRINT*

0.65

0.025

0.9

0.035

0.025

1.9

0.075

0.7

0.028

SCALE 10:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTS4101P/D