Datasheet nts4001n-d Datasheet

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NTS4001N

Small Signal MOSFET

30 V, 270 mA, Single N−Channel, SC−70

Features

• Low Gate Charge for Fast Switching

• Small Footprint − 30% Smaller than TSOP−6

• ESD Protected Gate

• Pb−Free Package is Available

Applications

• Low Side Load Switch

• Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC

• Buck Converters

• Level Shifts

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(BR)DSS

30 V

DS(on)

1.0 W @ 4.0 V

1.5 W @ 2.5 V

SC−70/SOT−323 (3 LEADS)

Gate31

TYP ID Max

270 mA

MAXIMUM RATINGS (T

Parameter Symbol Value Units

Drain−to−Source Voltage V Gate−to−Source Voltage V Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1) Pulsed Drain Current Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).

= 25°C unless otherwise stated)

DSS

Stead

State

Steady

State

TA = 25 °C TA = 85 °C 200 TA = 25 °C P

t =10 ms

STG

30 V ±20 V 270

330 mW

800 mA

−55 to 150

270 mA 260 °C

°C

Source

(Top View)

MARKING DIAGRAM

SC−70 / SOT−323

CASE 419

STYLE 8

TD = Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location) *Date Code orientation may vary depending

upon manufacturing location.

PIN ASSIGNMENT

TD M G

ORDERING INFORMATION

Device Package Shipping

Drain

†

NTS4001NT1 SC−70 3000/Tape & Reel

NTS4001NT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

September, 2006 − Rev. 4

1 Publication Order Number:

SC−70

(Pb−Free)

3000/Tape & Reel

NTS4001N/D

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NTS4001N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage

Temperature Coefficient Zero Gate Voltage Drain Current I Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS GSS

= 0 V, I

= 0 V, V

= 100 mA

= 30 V 1.0

= ±10 V ±1.0

30 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V Gate Threshold

Temperature Coefficient

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

= VDS, ID = 100 mA

= 4.0 V, I

= 2.5 V, I

= 3.0 V, I

= 10 mA 1.0 1.5 W

= 10 mA 1.5 2.0

= 10 mA 80 mS

0.8 1.2 1.5 V

CHARGES AND CAPACITANCES

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Threshold Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q

ISS OSS RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= 5.0 V, V

= 0.1 A

= 5.0 V

= 24 V,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time td Rise Time tr 23 Turn−Off Delay Time td

(ON)

(OFF)

= 4.5 V, V

= 10 mA, R

= 5.0 V, = 50 W

Fall Time tf 82

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

= 0 V,

= 10 mA

= 0 V, dIS/dt = 8.0 A/ms,

= 10 mA

= 25°C 0.65 0.7

= 125°C 0.43

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

60 mV/ °C

mA mA

−3.4 mV/ °C

20 33

19 32

7.25 12

0.9 1.3

0.2

0.3

0.2

5.0 ns

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NTS4001N

0.2

0.1

DRAIN−TO−SOURCE RESISTANCE (

)

0.18

0.16

0.14

0.12

0.1

0.08

0.06

DRAIN CURRENT (AMPS)

0.04

0.02 0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

1.25 VGS = 10 V

1.0

TYPICAL PERFORMANCE CURVES (T

VGS = 10 V to 3 V

VGS = 2.75 V

2.5 V

0.8

TJ = 125°C

1.20.4

TJ = 25°C

2.25 V

2 V

1.75 V

1.5 V

21.6

= 25°C unless otherwise noted)

VDS = 5 V

0.08

0.06

0.04

DRAIN CURRENT (AMPS)

0.02

1.2 21.6 2.

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

1.25 TJ = 25°C

1.0

1.4

TJ = 125°C

25°C

TJ = −55°C

1.8

VGS = 4.5 V

0.75 TJ = 25°C

0.5

0.25

DS(on),

0.005

0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS)

TJ = −55°C

0.205

Figure 3. On−Resistance vs. Drain Current and

Temperature

1.8

1.6

1.4

ID = 0.01 A VGS = 10 V

0.75 VGS = 10 V

0.5

DRAIN−TO−SOURCE RESISTANCE (W)

0.25

DS(on),

0.005

0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

1000

0.20

1.2 1

TJ = 150°C

TJ = 125°C

vs. Voltage

0.8

DRAIN−TO−SOURCE

0.6

0.4

DS(on),

RESISTANCE (NORMALIZED)

0.2 0

−50 0−25 25

Figure 5. On−Resistance Variation with

50 125100

75 150

TJ, JUNCTION TEMPERATURE (°C)

Temperature

, LEAKAGE (nA)

100

DSS

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

Figure 6. Drain−to−Source Leakage Current

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NTS4001N

C, CAPACITANCE (pF)

TYPICAL PERFORMANCE CURVES (T

VDS = 0 V VGS = 0 V

iss

rss

TJ = 25°C

iss

oss

rss

010 10

GSVDS

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

0.1 VGS = 0 V

0.08

TJ = 25°C

= 25°C unless otherwise noted)

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

0 0.2

0.4 1

0.6

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source Voltage vs. Total

Gate Charge

ID = 0.1 A TJ = 25°C

0.8

0.06

0.04

0.02

, SOURCE CURRENT (AMPS)

0.5 0.60.55 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Diode Forward Voltage vs. Current

0.65

0.7 0.75

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NTS4001N

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE M

0.05 (0.002)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

A1 0.00 0.05 0.10 0.000 A2 0.7 REF

b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004

D 1.80 2.10 2.20 0.071

E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047

STYLE 8:

PIN 1. GATE

MILLIMETERS

0.80 0.90 1.00 0.032

0.65 BSC

0.425 REF

2.00 2.10 2.40 0.079 0.083 0.095

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.035 0.040

0.002 0.004

0.028 REF

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

0.026 BSC

0.017 REF

SOLDERING FOOTPRINT*

0.65

0.025

1.9

0.075

0.9

0.035

0.7

0.028

SCALE 10:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTS4001N/D