Datasheet nts2101p-d Datasheet

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Page 1

NTS2101P

Power MOSFET

−8.0 V, −1.4 A, Single P−Channel, SC−70

Features

• Leading Trench Technology for Low R

• −1.8 V Rated for Low Voltage Gate Drive

• SC−70 Surface Mount for Small Footprint (2 x 2 mm)

• Pb−Free Package is Available

Applications

• High Side Load Switch

• Charging Circuit

• Single Cell Battery Applications such as Cell Phones,

Digital Cameras, PDAs, etc.

Extending Battery Life

DS(on)

(BR)DSS

−8.0 V

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Typ ID Max

DS(on)

65 mW @ −4.5 V 78 mW @ −2.5 V

117 mW @ −1.8 V

P−Channel MOSFET

−1.4 A

MAXIMUM RATINGS (T

Parameter Symbol Value Units

Drain−to−Source Voltage V Gate−to−Source Voltage V Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current Operating Junction and Storage Temperature TJ,

Source Current (Body Diode), Continuous I Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

= 25°C unless otherwise stated)

−8.0 V ±8.0 V

−1.4

0.29 W

−3.0 A

−55 to 150

−0.46 A 260 °C

DSS

Stead

State

t ≤ 5 s TA = 25°C −1.5 A

Steady

State

t ≤ 5 s 0.33 W

TA = 25°C TA = 70°C −1.1

TA = 25°C P

tp = 10 ms

STG

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Units

Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient − t ≤ 5 s (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

430 375

°C/W

MARKING DIAGRAM &

PIN ASSIGNMENT

SC−70/SOT−323

CASE 419

STYLE 8

TS = Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location) *Date Code orientation may vary depending

upon manufacturing location.

Drain

TS M G

Gate Source

ORDERING INFORMATION

Device Package Shipping

NTS2101PT1 SOT−323 3000/Tape & Reel

NTS2101PT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

SOT−323

(Pb−Free)

3000/Tape & Reel

†

March, 2006 − Rev. 1

1 Publication Order Number:

NTS2101P/D

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NTS2101P

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V Drain−to−Source Breakdown Voltage

Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

= 0 V,

= −6.4 V

= 0 V, I

= 0 V, V

= −250 mA

T T

= ±8.0 V ±100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V Negative Threshold

Temperature Coefficient

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

= VDS, ID = −250 mA

= −4.5 V, I

= −2.5 V, I

VGS = −1.8 V, I

= −1.0 A 65 100

= −0.5 A 78 140

= −0.3 A 117 210

CHARGES AND CAPACITANCES

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Threshold Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q

ISS OSS RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= −5.0 V, V

= −8.0 V

= −1.0 A

= −5.0 V,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time t Rise Time t Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

= −4.5 V, V

= −1.0 A, R

= −4.0 V,

= 6.2 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t Charge Time T Discharge Time T Reverse Recovery Charge Q

a b

= 0 V,

= −0.3 A

= 0 V, dISD/dt = 100 A/ms,

= −1.0 A

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

−8.0 −20 V

−10 mV/°C

= 25°C −1.0 mA

= 70°C −5.0

−0.45 −0.7 V

2.6 mV/°C

640 120

6.4

0.7

1.0

1.5

6.2 15 26 18

= 25°C −0.62 −1.2

= 125°C −0.51

23.4

7.7

15.7

9.5 nC

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NTS2101P

8.0

−I

DRAIN CURRENT (AMPS)

DRAIN−TO−SOURCE RESISTANCE (

)

DRAIN−TO−SOURCE

TYPICAL ELECTRICAL CHARACTERISTICS

−2.2 V

TJ = 25°C

−2.0 V

6.0 VGS = −2.5 V to −4.5 V

4.0

2.0

−1.8 V

−1.6 V

−1.4 V

−1.2 V

0 1.0 2.0 3.0 4.0

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.16 VGS = −4.5 V

0.12

TJ = 125°C

0.08

TJ = 25°C

−1.0 V

VDS w −10 V

6.0

4.0

2.0

DRAIN CURRENT (AMPS)

−I 0

0 0.4 0.8 1.2 1.6 2.0

TJ = 125°C

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.16 VGS = −2.5 V

0.12

0.08

TJ = 125°C

TJ = 25°C TJ = −55°C

TJ = 25°C

TJ = −55°C

2.4 2

0.04

0 2.0 4.0 6.0 8.0

DS(on),

TJ = −55°C

−ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Drain Current and

Temperature

1.5 ID = −1.0 A

VGS = −4.5 V

1.3

1.1

0.9

DS(on),

RESISTANCE (NORMALIZED)

0.7

−50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.04

DRAIN−TO−SOURCE RESISTANCE (W)

0 2.0 4.0 6.0 8.

DS(on),

−ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current

and Temperature

1000

800

600

400

C, CAPACITANCE (pF)

200

ISS

OSS

RSS

246

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C VGS = 0 V

Figure 6. Capacitance Variation

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NTS2101P

TYPICAL ELECTRICAL CHARACTERISTICS

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

0 8.0

−V

2.0

QG, TOTAL GATE CHARGE (nC)

VDS = −5.0 A ID = −1.0 A TA = 25°C

4.0

6.0

Figure 7. Gate−to−Source and Drain−to−Source

Voltage vs. Total Gate Charge

4.0 VGS = 0 V

3.0

2.0

TJ = 125°C

1.0

, SOURCE CURRENT (AMPS)

−I 0

0 0.2 0.4 0.6 0.8 1.0

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

TJ = 25°C

Figure 8. Diode Forward Voltage vs. Current

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NTS2101P

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE M

0.05 (0.002)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

A1 0.00 0.05 0.10 0.000 A2 0.7 REF

b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004

D 1.80 2.10 2.20 0.071

E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047

STYLE 8:

PIN 1. GATE

MILLIMETERS

0.80 0.90 1.00 0.032

0.65 BSC

0.425 REF

2.00 2.10 2.40 0.079 0.083 0.095

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.035 0.040

0.002 0.004

0.028 REF

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

0.026 BSC

0.017 REF

SOLDERING FOOTPRINT*

0.65

0.025

1.9

0.075

0.9

0.035

0.7

0.028

SCALE 10:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTS2101P/D