Datasheet ntr4502p Datasheet

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Page 1

NTR4502P

Power MOSFET

−30 V, −1.95 A, Single, P−Channel, SOT−23

Features

• Leading Planar Technology for Low Gate Charge / Fast Switching

• Low R

for Low Conduction Losses

DS(ON)

• SOT−23 Surface Mount for Small Footprint (3 X 3 mm)

• Pb−Free Packages are Available

Applications

• DC to DC Conversion

• Load/Power Switch for Portables and Computing

• Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.

• Battery Charging Circuits

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Drain Current (Note 1) t < 10 s

Power Dissipation (Note 1)

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8 in from case for 10 s)

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t = 10 s (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).

= 25°C unless otherwise stated)

DSS

TA = 25°C I

TA = 70°C −1.56

t < 10 s P

Steady

State

TA = 25°C I

TA = 70°C −0.90

Steady State P

tp = 10 ms

STG

−30 V

±20 V

−1.95 A

1.25 W

−1.13 A

0.4 W

−6.8 A

−55 to

150

−1.25 A

260 °C

°C/W

300

100

°C

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(BR)DSS

−30 V

TYP ID Max (Note 1)

DS(on)

155 mW @ −10 V

240 mW @ −4.5 V

P−Channel MOSFET

−1.95 A

MARKING DIAGRAM/

PIN ASSIGNMENT

Drain

TR2 M G

Gate

Source

SOT−23 CASE 318 STYLE 21

TR2 = Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

Device Package Shipping†

NTR4502PT1 SOT−23 3000 / Tape & Reel

NTR4502PT1G SOT−23

NTR4502PT3 SOT−23 10000 / Tape & Reel

NTR4502PT3G 10000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

(Pb−Free)

SOT−23

(Pb−Free)

3000 / Tape & Reel

April, 2009 − Rev. 4

1 Publication Order Number:

NTR4502P/D

Page 2

NTR4502P

Electrical Characteristics (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Zero Gate Voltage Drain Current I

(BR)DSS

DSS

VGS = 0 V, ID = −250 mA

VGS = 0 V, VDS = −30 V

TJ = 25°C −1 mA

TJ = 55°C −10

Gate−to−Source Leakage Current I

GSS

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Drain−to−Source On Resistance R

GS(TH)

DS(on)

VGS = VDS, ID = −250 mA

VGS = −10 V, ID = −1.95 A 155 200

VGS = −4.5 V, ID = −1.5 A 240 350

Forward Transconductance g

VDS = −10 V, ID=−1.25 A 3 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz, VDS = −15 V

VGS = −10 V, VDS = −15 V; ID = −1.95 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

VGS =−10 V, VDD = −15 V,

= −1.95 A, RG = 6 W

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)

Forward Diode Voltage

Reverse Recovery Time t

VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.25 A

VGS = 0 V, IS = −1.25 A −0.8 −1.2 V

2. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

−30 V

−1.0 −3.0 V

200

6 10

0.3

1.7

5.2 10

12 20

19 35

17.5 30

23 ns

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Page 3

NTR4502P

, DRAIN CURRENT (A)

−I

012345678910

VGS = −4.0 V

VGS = −3.8 V

VGS = −5.0 V

VGS = −3.6 V

VGS = −7.0 V

VGS = −10 V

VGS = −3.2 V

VGS = −2.4 V

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

VGS = −3.4 V

VGS = −3.0 V

VGS = −2.8 V VGS = −2.6 V

Figure 1. On−Region Characteristics

0.4

ID = −1.95 A T

= 25°C

0.35

0.3

0.25

VDS = −10 V

, DRAIN CURRENT (A)

−I

1234567

TJ = −55°C

TJ = 25°C

TJ = 100°C

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

0.3 TJ = 25°C

0.25

0.2

VGS = −4.5 V

0.2

0.15

, DRAIN−TO−SOURCE RESISTANCE (W)

0.1 345678910

DS(on)

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

1.8

ID = −1.9 A V

= −10 V

1.6

1.4

1.2

(NORMALIZED)

0.8

, DRAIN−TO−SOURCE RESISTANCE

0.6

DS(on)

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

VGS = −10 V

0.15

, DRAIN−TO−SOURCE RESISTANCE (W)

0.1 1 1.5 2 2.5 3 3.5 4 4.5 5

DS(on)

−ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

TJ = 150°C

100

, LEAKAGE (nA)

DSS

−I

2 6 10 14 18 22 26 30

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 100°C

Figure 6. Drain−to−Source Leakage Current

versus Voltage

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Page 4

NTR4502P

500

TJ = 25°C

ISS

VGS = 0 VVDS = 0 V

400

300

ISS

RSS

200

OSS

C, CAPACITANCE (pF)

100

RSS

10 5 0 5 1015202530

100

VDS = −15 V I

= −1.95 V

= −10 V

d(off)

−V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

VOLTAGE (V)

Figure 7. Capacitance Variation

(V)

, GATE−TO−SOURCE VOLTAGE

−V

01234567

ID = −1.95 A T

= 25°C

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

TJ = 25°C

2.5

(V)

, DRAIN−TO−SOURCE VOLTAGE

−V

t, TIME (ns)

d(on)

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

1.5

, SOURCE CURRENT

−I

0.5

0.3 0.6 0.9 1.2

http://onsemi.com

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

Page 5

NTR4502P

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

SEE VIEW C

0.25

VIEW C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003

D 2.80 2.90 3.04 0.110

E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004

STYLE 21:

PIN 1. GATE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.037

0.9

0.035

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0.037

SCALE 10:1

2.0

0.079

inches

PUBLICATION ORDERING INFORMATION

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NTR4502P/D