Datasheet ntr4501n Datasheet

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Page 1

NTR4501N

Power MOSFET

20 V, 3.2 A, Single N−Channel, SOT−23

Features

• Leading Planar Technology for Low Gate Charge / Fast Switching

• 2.5 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint

• Pb−Free Packages are Available

Applications

• Load/Power Switch for Portables

• Load/Power Switch for Computing

• DC−DC Conversion

(BR)DSS

20 V

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Typ

DS(on)

70 mW @ 4.5 V

88 mW @ 2.5 V

N−Channel

ID Max

(Note 1)

3.6 A

3.1 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain

Current (Note 1)

Steady State Power

Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Continuous Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

= 25°C unless otherwise stated)

Symbol Value Unit

DSS

Steady

State

TA = 25°C

TA = 85°C 2.4 A

Steady State P

tp = 10 ms

stg

20 V

±12 V

3.2 A

1.25 W

10.0 A

−55 to 150

1.6 A

260 °C

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size.

100

300

°C/W

MARKING DIAGRAM &

SOT−23 CASE 318 STYLE 21

TR1 = Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

PIN ASSIGNMENT

Drain

TR1 M G

Gate

Source

ORDERING INFORMATION

Device Package Shipping†

NTR4501NT1 SOT−23 3000/Tape & Reel

NTR4501NT1G SOT−23

(Pb−Free)

NTR4501NT3 SOT−23 10,000/Tape & Reel

3000/Tape & Reel

June, 2008 − Rev. 7

NTR4501NT3G 10,000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1 Publication Order Number:

SOT−23

(Pb−Free)

NTR4501N/D

Page 2

NTR4501N

Electrical Characteristics (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

(BR)DSS

(BR)DSS/TJ

DSS

VGS = 0 V, ID = 250 mA

VGS = 0 V TJ = 25°C 1.5

VDS = 16 V TJ = 85°C 10

Gate−to−Source Leakage Current I

GSS

VDS = 0 V, VGS = ±12 V ±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage (Note 3)

Negative Threshold

Temperature Coefficient

Drain−to−Source On Resistance

Forward Transconductance g

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 4.5 V, ID = 3.6 A 70 80

VGS = 2.5 V, ID = 3.1 A 88 105

VDS = 5.0 V, ID = 3.6 A 9 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate−to−Source Gate Charge Q

Gate−to−Drain Charge Q

iss

oss

rss

G(TOT)

VGS = 0 V, f = 1.0 MHz,

= 10 V

= 4.5 V, V

= 3.6 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(on)

d(off)

VGS = 4.5 V, VDS = 10 V,

= 3.6 A, RG = 6.0 W

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V, ISD = 1.6 A 0.8 1.2 V

VGS = 0 V,

= 100 A/ms,

IS/dt

IS = 1.6 A

3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

= 10 V,

20 24.5 V

22 mV/°C

0.65 1.2 V

−2.3 mV/°C

200

2.4 6.0

0.5

0.6

6.5 13

12 24

3 6

7.1

1.9

3.0 nC

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Page 3

NTR4501N

7.0

6.0

5.0

VGS = 10 V

VGS = 2.2 V

VGS = 3.0 V

VGS = 2.0 V

VGS = 1.8 V

TJ = 25°C

4.0

3.0 VGS = 1.6 V

2.0

, DRAIN CURRENT (AMPS)

1.0

VGS = 1.4 V

VGS = 1.2 V

012345678910

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.25

ID = 3.2 A T

= 25°C

0.20

0.15

7.0 VDS ≥ 10 V

6.0

5.0

4.0

3.0

2.0

, DRAIN CURRENT (AMPS)

1.0

TJ = 55°C

0.5 1.0 1.5 2.0 2.5 3.0

, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

TJ = 100°C

Figure 2. Transfer Characteristics

0.10 TJ = 25°C

0.09

0.08

0.07

VGS = 2.5 V

VGS = 4.5 V

3.5

0.10

, DRAIN−TO−SOURCE RESISTANCE (W)

0.05 123 6

DS(on)

, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

1.4

ID = 3.2 A V

= 4.5 V

1.2

1.0

, DRAIN−TO−SOURCE

0.8

DS(on)

RESISTANCE (NORMALIZED)

0.6

−50 −25 0 25 50 75 100 125

, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

150

0.06

, DRAIN−TO−SOURCE RESISTANCE (W)

0.05 23 456

DS(on)

, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain

Current and Gate Voltage

1000

VGS = 0 V

TJ = 150°C

100

, LEAKAGE (nA)

DSS

1.0 2 6 10 14 18

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 100°C

2012 1648

Figure 6. Drain−to−Source Leakage

Current versus Voltage

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Page 4

350

300

250

200

NTR4501N

5.0 VGS = 0 V T

= 25°C

4.0

iss

3.0

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

150

100

C, CAPACITANCE (pF)

oss

rss

0 2.5 5 7.5 10 15 20

12.5 17.5

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

100

VDS = 10 V I

= 3.2 A

= 4.5 V

d(on)

t, TIME (ns)

0.1 1 10 100

RG, GATE RESISTANCE (W)

d(off)

2.0

1.0

3 TJ = 25°C I

= 3.2 A

, GATE−TO−SOURCE VOLTAGE (VOLTS)

0 0.5 1.0 1.5 2.0

, TOTAL GATE CHARGE (nC)

2.5 3.0

Figure 8. Gate−to−Source and Drain−to−Source

Voltage versus Total Charge

VGS = 0 V T

= 25°C

, SOURCE CURRENT (AMPS)

0.3 0.6 0.9

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

1.2

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

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Figure 10. Diode Forward Voltage versus

Current

Page 5

NTR4501N

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

SEE VIEW C

0.25

VIEW C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004

STYLE 21:

PIN 1. GATE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.037

0.9

0.035

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0.037

SCALE 10:1

2.0

0.079

inches

PUBLICATION ORDERING INFORMATION

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For additional information, please contact your local Sales Representative

NTR4501N/D