Datasheet ntr4101p Datasheet

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Page 1

NTR4101P

Trench Power MOSFET

−20 V, Single P−Channel, SOT−23

Features

• Leading −20 V Trench for Low R

• −1.8 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint

• Pb−Free Package is Available

Applications

• Load/Power Management for Portables

• Load/Power Management for Computing

• Charging Circuits and Battery Protection

DS(on)

(BR)DSS

−20 V

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TYP ID MAX

DS(ON)

70 mW @ −4.5 V

90 mW @ −2.5 V

112 mW @ −1.8 V

−3.2 A

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

ESD Capability (Note 3) C = 100 pF,

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

= 25°C unless otherwise noted)

DSS

Steady State

t ≤ 10 s TA = 25°C −3.2

Steady State

t ≤ 10 s 1.25

Steady State

TA = 25°C

TA = 85°C −1.7

TA = 25°C P

TA = 25°C

TA = 85°C −1.3

TA = 25°C P

tp = 10 ms

RS = 1500 W

ESD 225 V

−55 to

STG

−20 V

±8.0 V

−2.4

0.73

−1.8

0.42 W

−18 A

°C

150

−2.4 A

260 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t < 10 s (Note 1)

Junction−to−Ambient − Steady State (Note 2)

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size.

3. ESD Rating Information: HBM Class 0

170

100

300

°C/W

P−Channel MOSFET

MARKING DIAGRAM &

PIN ASSIGNMENT

Gate

Drain

TR4 MG

Source

SOT−23 CASE 318 STYLE 21

TR4 = Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

NTR4101PT1 SOT−23 3000/Tape & Reel

NTR4101PT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

SOT−23 Pb−Free

3000/Tape & Reel

†

December, 2010 − Rev. 6

1 Publication Order Number:

NTR4101P/D

Page 2

NTR4101P

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 4)

(VGS = 0 V, ID = −250 mA)

Zero Gate Voltage Drain Current (Note 4)

(VGS = 0 V, VDS = −16 V)

Gate−to−Source Leakage Current

(VGS = ±8.0 V, VDS = 0 V)

ON CHARACTERISTICS

Gate Threshold Voltage (Note 4)

(VGS = VDS, ID = −250 mA)

Drain−to−Source On−Resistance

(VGS = −4.5 V, ID = −1.6 A) (VGS = −2.5 V, ID = −1.3 A) (VGS = −1.8 V, ID = −0.9 A)

Forward Transconductance (VDS = −5.0 V, ID = −2.3 A) g

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

(VGS = 0 V, f = 1 MHz, VDS = −10 V)

Reverse Transfer Capacitance C

Total Gate Charge (VGS = −4.5 V, VDS = −10 V, ID = −1.6 A) Q

Gate−to−Source Gate Charge (VDS = −10 V, ID = −1.6 A) Q

Gate−to−Drain “Miller” Charge (VDS = −10 V, ID = −1.6 A) Q

Gate Resistance R

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

(VGS = −4.5 V, VDS = −10 V,

ID = −1.6 A, RG = 6.0 W)

Fall Time t

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage (VGS = 0 V, IS = −2.4 A) V

Reverse Recovery Time

Charge Time t

dISD/dt = 100 A/ms, IS = −1.6 A)

(VGS = 0 V,

Discharge Time t

Reverse Recovery Charge Q

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperature.

Symbol Min Typ Max Unit

(BR)DSS

DSS

GSS

GS(th)

DS(on)

G(tot)

d(on)

d(off)

iss

oss

rss

−20 V

−1.0

±100 nA

−0.4 −0.72 −1.2 V

mW 70 90

112

85 120 210

7.5 S

675 pF

100

7.5 8.5 nC

1.2 nC

2.2 nC

6.5

7.5

12.6

30.2

21.0

−0.82 −1.2 V

12.8 15 ns

9.9 ns

3.0 ns

1008 nC

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Page 3

NTR4101P

TYPICAL PERFORMANCE CURVES (T

DRAIN CURRENT (AMPS)

−I

0.1

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

DRAIN−TO−SOURCE RESISTANCE (W)

0.01 0

DS(on),

Figure 3. On−Resistance vs. Drain Current and

VGS = −10 V − −2.4 V

−2.2 V

−2.0 V

−1.8 V

−1.6 V

632

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

VGS = −5.0 V

−ID, DRAIN CURRENT (AMPS)

T = 125°C

T = 25°C

T = −55°C

Temperature

TJ = 25°C

DRAIN CURRENT (AMPS)

−I 1

0.15

0.14

0.13

0.12

0.11

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

DRAIN−TO−SOURCE RESISTANCE (W)

0.01 0

DS(on),

= 25°C unless otherwise noted)

TJ = −55°C

25°C

125°C

VDS ≥ 20 V

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

VGS = −2.5 V

VGS = −4.5 V

810246

−ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current an

Temperature

1.4

ID = −1.6 A

1.2

1.0

0.8

DRAIN−TO−SOURCE

DS(on),

0.6

RESISTANCE (NORMALIZED)

0.4

−50 0−25 25

Figure 5. On−Resistance Variation with

50 12510075

TJ, JUNCTION TEMPERATURE (°C)

Temperature

100000

10000

1000

100

, LEAKAGE (nA)

DSS

−I 10

1.0

150

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VGS = 0 V

TJ = 150°C

TJ = 125°C

−V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

10 12 14 16

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

Page 4

NTR4101P

1000

800

600

400

C, CAPACITANCE (pF)

200

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1000

VDD = −10 V ID = −1.6 A VGS = −4.5 V

100

t, TIME (ns)

TYPICAL PERFORMANCE CURVES (T

VGS = 0 V

iss

oss

rss

Figure 7. Capacitance Variation

d(off)

d(on)

RG, GATE RESISTANCE (OHMS)

101

TJ = 25°C

12 14 16 18 20

100

= 25°C unless otherwise noted)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

064

−V Qg, TOTAL GATE CHARGE (nC)

ID = −1.6 A TJ = 25°C

Figure 8. Gate−to−Source and Drain−to−Source

Voltage vs. Total Gate Charge

VGS = 0 V

4.5 TJ = 25°C

3.5

2.5

1.5

, SOURCE CURRENT (AMPS)

−I

0.5

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

0.6 0.8

−V

DS,

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1.00.2 0.4

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

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Figure 10. Diode Forward Voltage vs. Current

Page 5

NTR4101P

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

SEE VIEW C

0.25

VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004

STYLE 21:

PIN 1. GATE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

SCALE 10:1

0.037

2.0

0.079

inches

0.95

0.037

0.9

0.035

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTR4101P/D