Datasheet ntr0202pl Datasheet

Page 1
NTR0202PL
Power MOSFET
−20 V, −400 mA, P−Channel SOT−23 Package
• Low R
R
DSon
R
DSon
Provides Higher Efficiency and Extends Battery Life
DS(on)
= 0.80 W, VGS = −10 V = 1.10 W, VGS = −4.5 V
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Packages are Available
Applications
• DC−DC Converters
• Computers
• Printers
• PCMCIA Cards
• Cellular and Cordless Telephones
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Continuous Drain Current @ TA = 25°C
Pulsed Drain Current (t
Total Power Dissipation @ TA = 25°C (Note 1) P
Operating and Storage Temperature Range TJ, T
Thermal Resistance − Junction−to−Ambient
Source Current (Body Diode) I
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
= 25°C unless otherwise noted)
J
Rating
≤ 10 ms)
p
Symbol Value Unit
stg
−20 V
$20 V
−0.4
−1.0
225 mW
− 55 to 150
556 °C/W
0.4 A
260 °C
A
°C
R
DSS
I
I
DM
T
GS
D
q
S
D
JA
L
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(BR)DSS
−20 V
R
DS(on)
550 mW @ −10 V
P−Channel
G
Typ
D
S
ID MAXV
−400 mA
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
PL M G
SOT−23 CASE 318 STYLE 21
PL = Specific Device Code M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
G
1
Gate2Source
ORDERING INFORMATION
Device Package Shipping
NTR0202PLT1 SOT−23 3000 Tape & Reel
†
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
NTR0202PLT1G SOT−23
(Pb−Free)
NTR0202PLT3 SOT−23 10,000 Tape & Reel
NTR0202PLT3G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
1 Publication Order Number:
3000 Tape & Reel
10,000 Tape & Reel
NTR0202PL/D
Page 2
NTR0202PL
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
= 0 V, ID = −10 mA)
(V
GS
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
(VDS = −20 V, VGS = 0 V, TJ = 25°C) (VDS = −20 V, VGS = 0 V, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 V, VDS = 0 V) I
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
= VGS, ID = −250 mA)
(V
DS
(Negative Temperature Coefficient)
Static Drain−to−Source On−Resistance
(V
= −10 V, ID = −200 mA)
GS
(VGS = −4.5 V, ID = −50 mA)
Forward Transconductance
(V
= −10 V, ID = −200 mA)
DS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance C
(VDS = −5.0 V, VGS = 0 V,
F = 1.0 MHz)
Reverse Transfer Capacitance C
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
(VDD = −15 V, ID = −200 mA,
= −10 V, RG = 6.0 W)
V
GS
Fall Time t
Total Gate Charge
Gate−Source Charge Q
(VDS = −15 V, ID = −200 mA,
VGS = −10 V)
Gate−Drain Charge Q
BODY−DRAIN DIODE CHARACTERISTICS (Note 2)
Diode Forward Voltage (Note 2)
= −400 mA, VGS = 0 V)
(I
S
(IS = −400 mA, VGS = 0 V, TJ = 150°C)
Reverse Recovery Time
(IS = −1.0 A, VGS = 0 V,
/dt = 100 A/ms)
dI
S
Reverse Recovery Stored Charge (IS = −1.0 A, VGS = 0 V,
/dt = 100 A/ms)
dI
S
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
−20 33
mV/°C
mA
−1.0
−10
±100 nA
−2.3 V mV/°C
0.80
1.10
pF
ns
nC
−1.0
V
GS(th)
R
DS(on)
C
t
d(on)
d(off)
Q
V
GSS
g
fs
iss
oss
rss
r
f
TOT
GS
GD
SD
−1.1 −1.9
3.0
0.55
0.80
0.5 Mhos
70
74
26
3.0
6.0
18
4
2.18
0.41
0.40
−0.8
−0.65
t
rr
t
a
t
b
Q
RR
11.8
9
3
0.007
ns
mC
V
W
V
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Page 3
NTR0202PL
0.75
VGS = −10 V
TJ = 25°C
−6 V
0.5
−5.5 V
−5 V
−4 V
−3.5 V
0.25
, DRAIN CURRENT (AMPS)
D
−I
−4.5 V
−3 V
−2.5 V
0
0 0.25 0.5 0.75 1.0
−V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On−Region Characteristics
1.5 TJ = 150°C
1
TJ = 25°C
1
VDS ≥ −10 V
0.75 TJ = 125°C
0.5 TJ = 25°C
0.25
, DRAIN CURRENT (AMPS)
D
−I
0
0 12345
−V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
TJ = 40°C
Figure 2. Transfer Characteristics
1.0
0.75
0.5
VGS = −4.5 V
VGS = −10 V
0.5 TJ = 40°C
, DRAIN−TO−SOURCE RESISTANCE (W)
0
0.125 0.25 0.375 0.5
DS(on)
R
, DRAIN CURRENT (AMPS)
−I
D
Figure 3. On−Resistance versus Drain Current
2.5
2
1.5
1
, DRAIN−TO−SOURCE
0.5
DS(on)
R
RESISTANCE (NORMALIZED)
ID = −0.05 A V
= −4.5 V
GS
ID = −0.2 A V
= −10 V
GS
0
−40 −15 10 35 60 85 110 135
, JUNCTION TEMPERATURE (°C)
T
J
Figure 5. On−Resistance Variation with
Temperature
150
0.25
, DRAIN−TO−SOURCE RESISTANCE (W)
0
0.125 0.25 0.375 0.5 0.625 0.75 0.875 1.0
DS(on)
R
, DRAIN CURRENT (AMPS)
−I
D
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1000
VGS = 0 V
TJ = 150°C
100
10
, LEAKAGE (nA)
DSS
1
−I
TJ = 25°C
0.1 2 6 10 14 18
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−V
DS
Figure 6. Drain−to−Source Leakage
Current versus Voltage
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Page 4
NTR0202PL
100
C
iss
TJ = 25°C
80
C
rss
60
C
iss
40
C
oss
20
C, CAPACITANCE (pF)
C
rss
0
10 5 0 5 10 15 20
−V
GS
−V
DS
−GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
100
VDD = −16 V I
= −0.2 A
D
= −4.5 V
V
GS
t
d(off)
10
Q
T
7.5
C
5
Q
Q
1
2
iss
2.5
C
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
−V
0
rss
0 0.5 1 1.5 2
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total
Charge
1
VGS = 0 V T
= 25°C
J
0.75
TJ = 25°C I
= −0.4 A
D
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V
t
10
f
t, TIME (ns)
t
r
t
d(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0.5
0.25
, SOURCE CURRENT (AMPS)
S
−I
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
−V
SD
Figure 10. Diode Forward Voltage versus
Current
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NTR0202PL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
H
SEE VIEW C
E
c
0.25
q
L
L1
VIEW C
3
E
12
b
e
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004
L1
H
E
STYLE 21:
PIN 1. GATE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104
2. SOURCE
3. DRAIN
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.9
0.035
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
0.037
SCALE 10:1
2.0
0.079
ǒ
inches
mm
Ǔ
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NTR0202PL/D
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