Datasheet ntms4706n-d Datasheet

NTMS4706N

Power MOSFET

30 V, 10.3 A, Single N−Channel, SO−8

Features

• Low R

• Low Gate Charge

• Standard SO−8 Single Package

• Pb−Free Package is Available

Applications

• Notebooks, Graphics Cards

• Synchronous Rectification

• High Side Switch

• DC−DC Converters

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1)

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 2)

Power Dissipation
(Note 2)

Pulsed Drain Current
Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche Energy

(VDD = 25 V, VGS = 10 V, IL Peak = 7.5 A,
L = 10 mH, RG = 25 W)

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

THERMAL RESISTANCE MAXIMUM RATINGS

Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 10 s (Note 1)
Junction−to−Ambient – Steady State (Note 2)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

2. Surfacemounted on FR4 board using the minimum recommended pad size.

DS(on)

Parameter Symbol Value Unit

Parameter Symbol Value Unit

[1 oz] including traces).

= 25°C unless otherwise stated)

J

DSS

GS

Steady

State

t v 10 s TA = 25°C 10.3

Steady

State

t v 10 s 2.2

Steady

State

TA = 25°C
TA = 85°C 6.2

TA = 25°C P

TA = 25°C
TA = 85°C 4.6
TA = 25°C P

tp = 10 ms

I

D

D

I

D

D

I

DM

T

stg

S

E

AS

T

L

R

q

JA

R

q

JA

R

q

JA

30 V

±20 V

8.6

1.5

6.4

0.83 W

31 A

−55 to
150

2.1 A

150 mJ

260 °C

83.5
58

150

A

W

A

°C

°C/W

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V

(BR)DSS

30 V

R

TYP ID MAX

DS(ON)

9.0 mW @ 10 V

11.4 mW @ 4.5 V

N−Channel

D

G

(Note 1)

10.3 A

S

MARKING DIAGRAM/

PIN ASSIGNMENT

Source

1

SO−8
CASE 751
STYLE 12

4706N = Device Code
A = Assembly Location
L = WaferLot
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

Source
Source

18

G

Gate

Top View

ALYWG

4706N

Drain
Drain
Drain
Drain

ORDERING INFORMATION

Device Package Shipping

NTMS4706NR2 SO−8 2500/Tape & Reel
NTMS4706NR2G SO−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

2500/Tape & Reel

†

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005

November, 2005 − Rev. 3

1 Publication Order Number:

NTMS4706N/D

NTMS4706N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V
Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V, VDS = 24 V

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V
Negative Threshold Temperature

V

Coefficient
Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 10.3 A 9.0 12 mW

VGS = 4.5 V, ID = 10 A 11.4 15

Forward Transconductance g

FS

VDS = 15 V, ID = 10 A 19 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Gate Resistance R

iss
oss
rss

G(TOT)

G(TH)

GS
GD

G

VGS = 0 V, f = 1.0 MHz, VDS = 24 V

VGS = 4.5 V, VDS = 15 V, ID = 10 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t

d(on)

r

d(off)

f

VGS = 10 V, VDD = 15 V, ID = 1.0 A,

RG = 3.0 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

RR

SD

a

b
RR

VGS = 0 V, IS = 2.1 A

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 2.1 A

3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

30 V

21 mV/°C

TJ = 25°C 1.0 mA

TJ = 125°C 50

1.0 2.5 V

−4.8 mV/°C

950
400
100

10 15

1.25

2.4

4.5

1.82

7.5 12

4.0 8.0
24 40
14 25

TJ = 25°C 0.74 1.0

TJ = 125°C 0.57

34
16
18
29 nC

pF

nC

W

ns

V

ns

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2

NTMS4706N

R

DRAIN−TO−SOURCE RESISTANCE (

)

0

30

0

35

5

TYPICAL PERFORMANCE CURVES

7

TJ = 25°C

2.8 V

2.6 V

2.4 V

2.2 V

8

TJ = 25°C
ID = 10 A

VDS ≥ 10 V

30

25

20

15

10

DRAIN CURRENT (AMPS)

D,

I

5

109

0

TJ = 125°C

TJ = 25°C

TJ = −55°C

3

2

2.51.5 4.

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

3.5

41

Figure 2. Transfer Characteristics

0.018
TJ = 25°C

0.015

VGS = 4.5 V

0.012

VGS = 10 V

16

81242

14

18

10

0.009

DRAIN−TO−SOURCE RESISTANCE (W)

0.006

DS(on),

R

ID, DRAIN CURRENT (AMPS)

10 V

25

20

15

10

DRAIN CURRENT (AMPS)

5

D,

I

0

0

5 V

3.2 V

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

4

3 V

62

513 7

Figure 1. On−Region Characteristics

W

0.03

0.025

0.02

0.015

0.01

0.005

DS(on),

2

3186496102

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

5

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.8
ID = 10.3 A
VGS = 10 V

1.6

1.4

1.2

DRAIN−TO−SOURCE

1

DS(on),

0.8

R

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

50 150

75

TJ, JUNCTION TEMPERATURE (°C)

125100 3

Figure 5. On−Resistance Variation with

Temperature

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

, LEAKAGE (nA)

DSS

I

1000

100

10

VGS = 0 V

TJ = 150°C

TJ = 100°C

126

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

18

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

27

24

21159

3

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3

NTMS4706N

TYPICAL PERFORMANCE CURVES

1800

1500

C

iss

VDS = 0 V VGS = 0 V

TJ = 25°C

1200

C

900

C

rss

iss

600

C

C, CAPACITANCE (pF)

oss

300

C

0

10 0 1020

V

V

DS

GS

20

rss

30

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDD = 10 V
ID = 10.3 A
VGS = 4.5 V

100

t

r

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

V

5

QT

V

DS

4

Q

GS

Q

GD

3

2

1

0

0

2

46

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate−To−Source and

Drain−To−Source Voltage vs. Total Charge

7

VGS = 0 V
TJ = 25°C

6

5

4

V

ID = 10 A
TJ = 25°C

8

GS

10

20

16

12

8

4

0

DS

V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

t

t, TIME (ns)

10

1

f

t

d(off)

t

d(on)

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

3

2

, SOURCE CURRENT (AMPS)

1

S

I

0

0.70.4 0.80.5

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

0.90.6

10.3

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4

NTMS4706N

PACKAGE DIMENSIONS

SOIC−8

CASE 751−07

ISSUE AG

−Y−

−Z−

−X−
A

58

B

1

S

0.25 (0.010)

4

M

M

Y

K

G

N

C

SEATING
PLANE

0.10 (0.004)

H

D

0.25 (0.010) Z

M

Y

SXS

X 45

_

M

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010

J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8

____

N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244

STYLE 12:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

INCHES

SOLDERING FOOTPRINT*

1.52

0.060

7.0

0.275

0.6

0.024

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

4.0

0.155

1.270

0.050

SCALE 6:1

mm

ǒ

inches

Ǔ

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5

NTMS4706N

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NTMS4706N/D

6