Datasheet ntms4705n Datasheet

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NTMS4705N

Power MOSFET

30 V, 12 A, Single N-Channel, SO-8

Features

•Low R

•Low Gate Charge

•Standard SO-8 Single Package

•Pb-Free Package is Available

Applications

•Notebooks, Graphics Cards

•Synchronous Rectification

•High Side Switch

•DC-DC Converters

MAXIMUM RATINGS (T

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Single Pulse Drain-to-Source Avalanche Energy (V L = 10 mH, R

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

THERMAL RESISTANCE MAXIMUM RATINGS

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t v 10 s (Note 1)

Junction-to-Ambient – Steady State (Note 2)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

2. Surface mounted on FR4 board using the minimum recommended pad size.

DS(on)

= 25°C unless otherwise stated)

Parameter

Steady

State

t v 10 s TA = 25°C 12

Steady

State

t v 10 s 2.3

Steady

State

= 25 V, VGS = 10 V, Peak IL = 7.5 A,

(Cu area = 1.127 in sq [1 oz] including traces).

= 25 W)

Parameter Symbol Value Unit

TA = 25°C

TA = 85°C 7.2

TA = 25°C P

TA = 25°C

TA = 85°C 5.3

TA = 25°C P

tp = 10 ms

Symbol Value Unit

DSS

stg

30 V

±20 V

1.52

7.4

0.85 W

36 A

-55 to 150

3.0 A

210 mJ

260 °C

147

°C

°C/W

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(BR)DSS

30 V

TYP ID MAX

DS(ON)

8.0 mW @ 10 V

10.5 mW @ 4.5 V

N-Channel

(Note 1)

12 A

MARKING DIAGRAM/

PIN ASSIGNMENT

SO-8 CASE 751 STYLE 12

(Note: Microdot may be in either location)

Source Source Source

Gate

4705N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

AYWWG

4705N

Top View

Drain Drain Drain Drain

ORDERING INFORMATION

Device Package Shipping

NTMS4705NR2 SO-8 2500/Tape & Reel

NTMS4705NR2G SO-8

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

2500/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2007

October, 2007 - Rev. 3

1 Publication Order Number:

NTMS4705N/D

Page 2

NTMS4705N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

(BR)DSS

(BR)DSS/TJ

DSS

VGS = 0 V, ID = 250 mA

VGS = 0 V, VDS =

24 V

Gate-to-Source Leakage Current I

GSS

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient

Drain-to-Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 12 A 8.0 10 mW

VGS = 4.5 V, ID = 10 A 10.5 14

Forward Transconductance g

VDS = 15 V, ID = 10 A 19 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Gate Resistance R

iss

oss

rss

G(TOT)

G(TH)

VGS = 0 V, f = 1.0 MHz, VDS = 24 V

VGS = 4.5 V, VDS = 15 V, ID = 10 A

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(on)

d(off)

VGS = 10 V, VDD = 15 V, ID = 1.0 A,

= 3.0 W

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V, IS = 3.0 A

VGS = 0 V, dIS/dt = 100 A/ms,

= 3.0 A

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

30 V

15 mV/°C

TJ = 25°C 1.0 mA

TJ = 125°C 50

1.0 2.5 V

5.0 mV/°C

1078

460

127

11 18

1.1

2.1

5.8

1.76 3.5

7.8

4.7

TJ = 25°C 0.73 1.0

TJ = 125°C 0.51

30 nC

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Page 3

NTMS4705N

TYPICAL PERFORMANCE CURVES

5 V

3.8 V

3.4 V

3.2 V

DRAIN CURRENT (AMPS)

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

513 7

Figure 1. On-Region Characteristics

0.07

0.06

0.05

0.04

0.03

0.02

0.01

DRAIN-TO-SOURCE RESISTANCE (W)

0 7.5

DS(on),

2.5

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

3 V

TJ = 25°C

2.6 V

2.4 V

TJ = 25°C ID = 12 A

VDS ≥ 10 V

DRAIN CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = -55°C

109

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.018 TJ = 25°C

0.014

VGS = 4.5 V

0.010

VGS = 10 V

0.006

DRAIN-TO-SOURCE RESISTANCE (W)

0.002

DS(on),

812420

DRAIN CURRENT (AMPS)

Figure 3. On-Resistance vs. Gate-to-Source

Voltage

1.8 ID = 12 A V

= 4.5 V

1.6

1.4

1.2

DRAIN-TO-SOURCE

DS(on),

0.8

RESISTANCE (NORMALIZED)

0.6

-50 0-25 25

50 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation with

Temperature

1000000

10000

, LEAKAGE (nA)

100

DSS

125100 0

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Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 125°C

105

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain-to-Source Leakage Current

vs. Voltage

Page 4

NTMS4705N

TYPICAL PERFORMANCE CURVES

2500

2000

VDS = 0 V VGS = 0 V

iss

TJ = 25°C

1500

1000

C, CAPACITANCE (pF)

500

rss

iss

oss

rss

10 0 5 105

15 25

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDD = 15 V I

= 12 A

= 4.5 V

t, TIME (ns)

100

d(off)

d(on)

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, TOTAL GATE CHARGE (nC)

Figure 8. Gate-To-Source and

Drain-To-Source Voltage vs. Total Charge

VGS = 0 V T

= 25°C

ID = 10 A T

= 25°C

1 10 100

, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

220

200

180

160

140

120

100

AVALANCHE ENERGY (mJ)

EAS, SINGLE PULSE DRAIN-TO-SOURCE

, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Avalanche Energy vs.

Starting Junction Temperature

, SOURCE CURRENT (AMPS)

0 0.4

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

ID = 10 A

10025

12575

150

0.80.6

1.00.2

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Page 5

NTMS4705N

PACKAGE DIMENSIONS

SOIC-8

CASE 751-07

ISSUE AJ

-Y-

-Z-

-XA

0.25 (0.010)

SEATING PLANE

0.10 (0.004)

0.25 (0.010) Z

SXS

X 45

SOLDERING FOOTPRINT*

1.52

0.060

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.

6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010

J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8

____

N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244

STYLE 12:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

INCHES

7.0

0.275

0.6

0.024

4.0

0.155

1.270

0.050

SCALE 6:1

inches

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTMS4705N/D