Datasheet ntms4503n-d Datasheet

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NTMS4503N

Power MOSFET

28 V, 14 A, N−Channel, SOIC−8

Features

• Low R

• High Power and Current Handling Capability

• Low Gate Charge

• Pb−Free Package is Available

Applications

• DC/DC Converters

• Motor Drives

• Synchronous Rectifier − POL

• Buck Low−Side

DS(on)

(BR)DSS

28 V

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Typ

DS(on)

7.0 mW @ 10 V

8.8 mW @ 4.5 V

ID Max

(Note 1)

14 A

MAXIMUM RATINGS (T

Drain−to−Source Voltage V Gate−to−Source Voltage − Continuous V Drain Current

Continuous @ TA = 25°C (Note 1) Continuous @ TA = 25°C (Note 2) Continuous @ TA = 25°C (Note 3) Single Pulse (tp = 10 ms)

Total Power Dissipation

TA = 25°C (Note 1) TA = 25°C (Note 2) TA = 25°C (Note 3)

Operating and Storage Temperature TJ, T

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C (VDD = 30 V, VGS = 10 V, IL = 12.2 A, L = 1.0 mH, RG = 25 W)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

= 25°C unless otherwise noted)

Rating Symbol Value Unit

stg

28 V

$20 V

14 12

9.0 40

2.5

1.66

0.93

−55 to 150

75 mJ

260 °C

°C

DSS

THERMAL RESISTANCE RATINGS

Rating Symbol Value Unit

Thermal Resistance

Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Junction−to−Ambient (Note 3)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using minimum recommended pad size (Cu area 0.412 in sq), t < 10 s.

2. Surface−mounted on FR4 board using 1″ pad size (Cu area 1.127 in sq) steady state.

3. Surface−mounted on FR4 board using minimum recommended pad size (Cu area 0.412 in sq), steady state.

°C/W 50 75

135

MARKING DIAGRAM &

PIN ASSIGNMENT

SOIC−8 CASE 751 STYLE 12

4503N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

DD DD

4503N

AYWW G

SS SG

ORDERING INFORMATION

Device Package Shipping†

NTMS4503NR2 SOIC−8 2500/Tape & Ree NTMS4503NR2G SOIC−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specificatio Brochure, BRD8011/D.

2500/Tape & Ree

March, 2007 − Rev. 2

1 Publication Order Number:

NTMS4503N/D

Page 2

NTMS4503N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V, VDS = 24 V

VDS = 0 V, VGS = $20 V − − $100 nA

− − 22 − mV/°C

TJ = 25°C − − 1.0 mA

TJ = 100°C − − 25

28 31 − V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage V Negative Threshold Temperature Coefficient V Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

− − −5.0 − mV/°C

VGS = 10 V, ID = 14 A − 7.0 8.0 mW

1.0 − 2.0 V

VGS = 4.5 V, ID = 10 A − 8.8 9.8

Forward Transconductance g

VDS = 10 V, ID = 14 A − 30 − S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Threshold Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q

ISS OSS RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz, V

= 16 V

VGS = 4.5 V, VDS = 16 V, ID = 10 A

− 2400 −

− 1000 −

− 375 −

− 23 −

− 2.0 −

− 5.0 −

− 12 −

SWITCHING CHARACTERISTICS, VGS = V (Note 5)

Turn−On Delay Time t Rise Time tr − 70 − Turn−Off Delay Time t Fall Time t

d(ON)

d(OFF)

VGS = 4.5 V, VDD = 16 V, ID = 10 A,

RG = 2.0 W

− 18.5 −

− 21 −

− 23 −

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t Charge Time T Discharge Time T Reverse Recovery Charge Q

VGS = 0 V, IS = 10 A

VGS = 0 V,

ISD/dt

IS = 14 A

= 100 A/ms,

TJ = 25°C − 0.82 1.2

TJ = 125°C − 0.65 −

− 48 −

− 23 −

− 25 −

− 25 − nC

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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NTMS4503N

DRAIN−TO−SOURCE RESISTANCE (

)

TYPICAL PERFORMANCE CURVES

VGS = 10, 3.6, 3.2 V

DRAIN CURRENT (AMPS)

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

3 V

513 97

Figure 1. On−Region Characteristics

0.011

0.010

0.009

0.008

TJ = 25°C

2.8 V

2.6 V

2.4 V

2.2 V

ID = 14 A TJ = 25°C

VDS ≥ 10 V

DRAIN CURRENT (AMPS)

5 0

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

TJ = −55°C

21.5

2.5

TJ = 100°C

3.5

Figure 2. Transfer Characteristics

0.012

0.011

0.010

0.009

0.008

0.007

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

0.007

0.006 111

DS(on),

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.6 ID = 14 A

VGS = 4.5 V

1.4

1.2

DRAIN−TO−SOURCE

0.8

DS(on),

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

50 150

TJ, JUNCTION TEMPERATURE (°C)

125100 2

0.006

0.005

DRAIN−TO−SOURCE RESISTANCE (W)

0.004 48

DS(on),

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

1000

, LEAKAGE (nA)

DSS

100

VGS = 0 V

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 150°C

TJ = 100°C

12 16

10468

16 20

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−to−Source Leakage Current

vs. Voltage

Page 4

NTMS4503N

TYPICAL PERFORMANCE CURVES

4200

TJ = 25°C

3600

iss

3000

2400

rss

iss

1800

1200

C, CAPACITANCE (pF)

oss

600

10 0 5 105

VDS = 0 V VGS = 0 V

rss

15 20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

t, TIME (ns)

VDD = 16 V ID = 10 A VGS = 4.5 V

100

1 10 100

RG, GATE RESISTANCE (OHMS)

d(off)

d(on)

, GATE−TO−SOURCE VOLTAGE (VOLTS)

510 20

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate−To−Source and

Drain−To−Source Voltage vs. Total Charge

VGS = 0 V

TJ = 25°C

8 7 6 5 4 3 2

, SOURCE CURRENT (AMPS)

1 0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

0.70.4

0.80.6

ID = 10 A TJ = 25°C

0.9

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1.00.5

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

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Page 5

−Y−

−Z−

−X− A

0.25 (0.010) Z

SXS

0.25 (0.010)

SEATING PLANE

NTMS4503N

PACKAGE DIMENSIONS

SOIC−8 NB

CASE 751−07

ISSUE AH

X 45

0.10 (0.004)

SOLDERING FOOTPRINT*

1.52

0.060

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010

J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8

____

N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244

STYLE 12:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

INCHES

7.0

0.275

0.6

0.024

4.0

0.155

1.270

0.050

SCALE 6:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTMS4503N/D