Datasheet ntms4107n-d Datasheet

NTMS4107N

s

Power MOSFET

30 V, 18 A, Single N−Channel, SO−8

Features

• Ultra Low R

• Optimized for Low Side Synchronous Applications

• High Speed Switching Capability

• Pb−Free Package is Available

Applications

• Notebook Computer Vcore Applications

• Network Applications

• DC−DC Converters

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1)

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 2)

Power Dissipation
(Note 2)

Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Continuous Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche

Energy (V
L = 1 mH, R

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

THERMAL RESISTANCE RATINGS

Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t v 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously . If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Surface−mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412″ sq.).

= 30 V , VGS = 10 V, IPK = 32 A,

DD

= 25 W)

G

(at 4.5 VGS), Low Gate Resistance and Low Q

DS(on)

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

DSS

GS

Steady

State

t v10 s TA = 25°C 18

Steady

State

t v10 s 2.5

Steady

State

Rating Symbol Max Unit

TA = 25°C
TA = 85°C 11

TA = 25°C

TA = 25°C
TA = 85°C 8.0

TA = 25°C

tp = 10 ms

I

D

P

D

I

D

P

D

I

DM

stg

S

E

AS

T

L

R

q

JA

R

q

JA

R

q

JA

30 V

$20 V

15

1.67 W

11

0.93 W

56 A

−55 to 150 °C

3.0 A

512 mJ

260 °C

75
50

135

A

A

°C/W

G

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(BR)DSS

30 V

3.4 mW @ 10 V

4.7 mW @ 4.5 V

G

R

DS(on)

TYP

D

S

ID MAXV

18 A

MARKING DIAGRAM/

PIN ASSIGNMENT

8

1

SO−8
CASE 751
STYLE 12

4107N = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

Source
Source
Source

18

AYWWG

G

Gate

(Top View)

4107N

Drain
Drain
Drain
Drain

ORDERING INFORMATION

Device Package Shipping

NTMS4107NR2 SO−8 2500/Tape & Reel
NTMS4107NR2G SO−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

2500/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 3

1 Publication Order Number:

NTMS4107N/D

NTMS4107N

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V, VDS = 24 V

VDS = 0 V, VGS = $20 V $100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage
Negative Threshold Temperature Coefficient V
Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 4.5 V, ID = 14 A 4.7 5.5 mW

VGS = 10 V, ID = 15 A 3.4 4.5

Forward Transconductance g

FS

VDS = 15 V, ID = 18 A 25 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Gate Resistance R

C

ISS
OSS
RSS

G(TOT)

G(TH)

GS
GD

G

V

= 0 V, f = 1.0 MHz, V

GS

VGS = 4.5 V, VDS = 15 V, ID = 18 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 10 V, VDS = 15 V,

= 1.0 A, RG = 6.0 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

V

SD

RR

a
b

RR

VGS = 0 V, IS = 3.0 A

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 3.0 A

S

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

30 V

21 mV/°C

TJ = 25°C 1.0 mA

TJ = 125°C 10

1.0 2.5 V

7.4 mV/°C

6000

DS

= 15 V

1030

550

45

6.5

16.3

19.3

0.60

9.0
10
94
38

TJ = 25°C 0.8 1.1

TJ = 125°C 0.6

41
20
21
48 nC

pF

nC

W

ns

V

ns

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2

NTMS4107N

6

0

28

28

TYPICAL PERFORMANCE CURVES

3.2 V

24

VGS = 4 V to 10 V

20

16

12

8

DRAIN CURRENT (AMPS)

D,

I

4
0

1735 9

0

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS

Figure 1. On−Region Characteristics

0.008

0.007

0.006

0.005

0.004

VGS = 10 V

4

62

TJ = 125°C

TJ = 25°C

3.0 V

2.8 V

2.6 V

8

10

VDS ≥ 10 V

24

20

16

12

8

DRAIN CURRENT (AMPS)

D,

I

4
0

03

TJ = 125°C

TJ = 25°C

12

TJ = −55°C

4

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.008

0.007

0.006

0.005

0.004

TJ = 25°C

VGS = 4.5 V

5

0.003

TJ = 25°C

0.002

0.001

DRAIN−TO−SOURCE RESISTANCE (W)

TJ = −55°C

0

226

DS(on),

R

10 18 22

146

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Drain Current and

Temperature

2

ID = 16 A
V

= 12 V

GS

1.5

1

DRAIN−TO−SOURCE

0.5

DS(on),

R

RESISTANCE (NORMALIZED)

0

−50 0−25 25
TJ, JUNCTION TEMPERATURE (°C)

50 150

75

125100 0

0.003

0.002

0.001

DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on),

R

Figure 4. On−Resistance vs. Drain Current and

1000000

100000

10000

, LEAKAGE (nA)

1000

DSS

I

VGS = 0 V

100

VGS = 10 V

62

10

14

ID, DRAIN CURRENT (AMPS)

Gate Voltage

TJ = 150°C

TJ = 125°C

5

10 20

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

15

18

22

2

25

3

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−to−Source Leakage Current

vs. Voltage

3

NTMS4107N

TYPICAL PERFORMANCE CURVES

8000
7000

6000

TJ = 25°C

C

iss

5000
4000
3000

C, CAPACITANCE (pF)

2000

C

1000

C

rss

0

0510

15 20 25

oss

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−To−Source and

1000

VDD = 15 V
I

= 1 A

D

= 4.5 V

V

GS

100

t

d(off)

10

8

6

V

QT

4

Q

GS

Q

GD

2

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

V

0

10 20 40

0

30

, TOTAL GATE CHARGE (nC)

Q

G

50 60 70 80 90

Drain−To−Source Voltage vs. Total Charge

12

VGS = 0 V
T

= 25°C

J

10

8

GS

ID = 16 A
T

= 25°C

J

100

t

f

t

t, TIME (ns)

10

1

1 10 100

d(on)

t

r

, GATE RESISTANCE (OHMS)

R

G

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

1000

100

10

VGS = 20 V

1

SINGLE PULSE
TC = 25°C

, DRAIN CURRENT (AMPS)

0.1

D

I

0.01

0.1
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS

Figure 11. Maximum Rated Forward Biased

, SOURCE CURRENT (AMPS)

S

I

R

LIMIT

DS(on)

THERMAL LIMIT
PACKAGE LIMIT

1

Safe Operating Area

6

4

2

0

0.2

V

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

SD

0.40

0.80.6

Figure 10. Diode Forward Voltage vs. Current

10 ms

100 ms

1 ms

10 ms

dc

10

100

1

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4

NTMS4107N

PACKAGE DIMENSIONS

SO−8

CASE 751−07

ISSUE AG

−Y−

−Z−

−X−
A

58

B

1

S

0.25 (0.010)

4

M

M

Y

K

G

C

SEATING
PLANE

0.10 (0.004)

H

D

0.25 (0.010) Z

M

Y

SXS

N

X 45

_

M

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010

J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8

____

N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244

STYLE 12:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

INCHES

SOLDERING FOOTPRINT*

1.52

0.060

7.0

0.275

0.6

0.024

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

4.0

0.155

1.270

0.050

SCALE 6:1

ǒ

inches

mm

Ǔ

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5

NTMS4107N

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