Datasheet ntmfs4936n-d Datasheet

NTMFS4936N

Power MOSFET

30 V, 79 A, Single N−Channel, SO−8 FL

Features

• Low R

Minimize Conduction, Driver and Switching Losses

• Next Generation Enhanced Body Diode, Engineered for Soft

Recovery, Provides Schottky−Like Performance

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• CPU Power Delivery

• DC−DC Converters

, Low Capacitance and Optimized Gate Charge to

DS(on)

V

(BR)DSS

30 V

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R

MAX ID MAX

DS(ON)

4.0 mW @ 10 V

5.5 mW @ 4.5 V

D (5,6)

79 A

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Note 1)

Power Dissipation R

Continuous Drain Current R (Note 1)

Power Dissipation R

Continuous Drain Current R (Note 2)

Power Dissipation R

Continuous Drain Current R (Note 1)

Power Dissipation R

Pulsed DrainCurrent

Current Limited by Package TA = 25°C I

Operating Junction and Storage Temperature

Source Current (Body Diode) I

Drain to Source DV/DT dV/d

Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, I

L

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

q

JA

(Note 1)

q

JA

≤ 10 s

q

JA

≤ 10 s (Note 1)

q

JA

q

JA

(Note 2)

q

JA

q

JC

(Note 1)

q

JC

= 44 Apk, L = 0.1 mH, RG = 25 W)

= 25°C unless otherwise stated)

J

TA = 25°C

TA = 100°C 12.3

TA = 25°C P

TA = 25°C

TA = 100°C 22

TA = 25°C P

Steady

State

TA = 25°C, tp = 10 ms

TA = 25°C

TA = 100°C 7.3

TA = 25°C P

TC = 25°C

TC =100°C 50

TC = 25°C P

DSS

GS

I

DM

Dmax

TJ,

T

STG

E

AS

T

30 V

±20 V

t

19.5

2.62 W

35

8.4 W

11.6

0.92 W

79

43 W

235 A

100 A

−55 to +150

39.2 A

6.0 V/ns

96.8 mJ

260 °C

D

S

L

A

°C

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING DIAGRAM

D

S

4936N

1

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)

S

AYWWG

S

G

D

ORDERING INFORMATION

Device Package Shipping

NTMFS4936NT1G SO−8 FL

(Pb−Free)

NTMFS4936NT3G SO−8 FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1500 /

Tape & Reel

5000 /

Tape & Reel

D

†

November, 2010 − Rev. 3

1 Publication Order Number:

NTMFS4936N/D

NTMFS4936N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – Steady State (Note 4)

Junction−to−Ambient – (t ≤ 10 s) (Note 3)

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

R

q

JC

R

q

JA

R

q

JA

R

q

JA

2.9

47.7

135.2

14.8

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS

T

DSS

GSS

VGS = 0 V, ID = 250 mA

/

J

VGS = 0 V,

VDS = 24 V

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V

VGS = 4.5 V

Forward Transconductance g

FS

VDS = 1.5 V, ID = 15 A 50 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 15 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 10 V, VDS = 15 V; ID = 30 A 43 nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDS = 15 V,

= 15 A, RG = 3.0 W

I

D

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

30 V

TBD

TJ = 25°C 1.0

TJ = 125°C 10

1.2 1.6 2.2 V

4.0 mV/°C

ID = 30 A 2.9 4.0

ID = 15 A 2.9

ID = 30 A 3.9 5.5

ID = 15 A 3.9

3044

1014

39

19

4.6

9.2

2.4

15.5

20.6

24.6

7.0

mV/°C

mA

mW

pF

nC

ns

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2

NTMFS4936N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter UnitMaxTypMinTest ConditionSymbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 10 V, VDS = 15 V,

= 15 A, RG = 3.0 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 30 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

PACKAGE PARASITIC VALUES

Source Inductance

Drain Inductance L

Gate Inductance L

Gate Resistance R

L

S

D

G

TA = 25°C

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

10.4

19

29

8.0

TJ = 25°C 0.8 1.1

TJ = 125°C 0.65

39

21.5

17.5

36 nC

0.65 nH

0.005 nH

1.84 nH

1.1 2.0

ns

V

ns

W

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3

140

4

120

100

80

60

4.5 V to 10 V

4.0 V

NTMFS4936N

TYPICAL CHARACTERISTICS

140

VGS = 3.8 V

3.6 V

3.4 V

3.2 V

120

100

80

60

VDS = 10 V

TJ = 125°C

40

, DRAIN CURRENT (A)

D

I

20

0

01234

, DRAIN−TO−SOURCE VOLTAGE (V)

V

DS

2.8 V

3.0 V

2.4 V

2.6 V

Figure 1. On−Region Characteristics

0.012

0.011

0.010

0.009

0.008

0.007

0.006

0.005

0.004

0.003

, DRAIN−TO−SOURCE RESISTANCE (W)

0.002

2.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5

DS(on)

R

3.5

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID = 30 A T

= 25°C

J

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

40

, DRAIN CURRENT (A)

D

I

20

0

1 1.5 2 2.5 3 3.5 4

VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ = 25°C

TJ = −55°C

Figure 2. Transfer Characteristics

0.006

0.0055

0.005

0.0045

0.004

0.0035

0.003

0.0025

, DRAIN−TO−SOURCE RESISTANCE (W)

0.002

DS(on)

R

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

20 30 40 50 60 70 80 90 100 110 120 130 1

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1.8

1.7

ID = 30 A

1.6

V

= 10 V

GS

1.5

1.4

1.3

1.2

1.1 1

(NORMALIZED)

0.9

0.8

0.7

, DRAIN−TO−SOURCE RESISTANCE

0.6

DS(on)

0.5

R

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

10000

1000

100

, LEAKAGE (nA)

DSS

I

10

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4

VGS = 0 V

TJ = 150°C

TJ = 125°C

TJ = 85°C

5 1015202530

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

NTMFS4936N

TIME (

)

TYPICAL CHARACTERISTICS

3600

C

3200

iss

2800

2400

2000

1600

C

oss

1200

C, CAPACITANCE (pF)

800

C

400

rss

0

0 5 10 15 20 25 30

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

VDD = 15 V I

= 15 A

D

= 10 V

V

100

ns

t,

GS

10

TJ = 25°C

VGS = 0 V

t

d(off)

t

f

t

r

t

d(on)

10

Q

9

T

8

7

6

5

Q

GS

GD

4

Q

3

2

1

, GATE−TO−SOURCE VOLTAGE (V)

GS

0

V

03 91215 212427 3336 42

VDD = 15 V V I

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate−To−Source and

Drain−To −Source Voltage vs. Total Charge

30

VGS = 0 V

25

20

15

10

TJ = 125°C

TJ = 25°C

= 10 V

GS

= 30 A

D

456183039

, SOURCE CURRENT (A)

S

5

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time

I

0

0.4 0.5 0.6 0.7 0.8 0.9 1.0

, SOURCE−TO−DRAIN VOLTAGE (V)

V

SD

Figure 10. Diode Forward Voltage vs. Current

Variation vs. Gate Resistance

1000

100

10

VGS = 20 V

1

, DRAIN CURRENT (A)

D

I

SINGLE PULSE TC = 25°C

0.1

R

DS(on)

LIMIT

THERMAL LIMIT

0.01

PACKAGE LIMIT

0.1 1 10 100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1 ms

10 ms

dc

100

90

80

70

60

50

40

30

20

AVALANCHE ENERGY (mJ)

10

, SINGLE PULSE DRAIN−TO−SOURCE

0

AS

E

25 50 75 100 125 150

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

ID = 44 A

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NTMFS4936N

TYPICAL CHARACTERISTICS

100

D = 0.5

0.2

10

0.1

0.05

0.02

1

0.01

r(t) (°C/W)

0.1

SINGLE PULSE

0.01

0.001

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t, TIME (ms)

Figure 13. Thermal Response

100

90

80

70

60

50

GFS (S)

40

30

20

10

0

0 10 20 304050 60 708090

, (A)

I

D

Figure 14. GFS vs. I

D

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6

NTMFS4936N

PACKAGE DIMENSIONS

DFN5 5x6, 1.27P (SO8 FL)

CASE 488AA−01

ISSUE D

0.10 C

C

0.05

c

PIN 5

(EXPOSED PAD)

D

2

D1

1234

TOP VIEW

SIDE VIEW

b

8X

A0.10 B

L

14

E2

2 X

e/2

0.20

A

E1

2

A

DETAIL A

K

M

L1

NOTES:

C

B

2 X

0.20 C

4 X

q

E

c

3 X

e

A1

C

SEATING

PLANE

DETAIL A

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

A1 0.00 −−−

D1 4.50 4.90 D2 3.50 −−−

E1 5.50 5.80 E2 3.45 −−−

L1 0.05 0.17

MILLIMETERS

A 0.90 1.00

b 0.33 0.41 c 0.23 0.28 D 5.15 BSC

E 6.15 BSC

e 1.27 BSC G 0.51 0.61 K 0.51 −−− L 0.51 0.61

M 3.00 3.40

q 0 −−−

_

MAX

1.10

0.05

0.51

0.33

5.10

4.22

6.10

4.30

0.71

−−−

0.71

0.20

3.80 12

_

SOLDERING FOOTPRINT*

3X 4X

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

1.330

3.200

0.965

2X

0.495

1.270

0.750

2X

0.905

0.475

4X

1.000

4.530

4.560

2X

1.530

G

D2

BOTTOM VIEW

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTMFS4936N/D

7