Datasheet ntmfs4935n Datasheet

NTMFS4935N

Power MOSFET

30 V, 93 A, Single N−Channel, SO−8 FL

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• CPU Power Delivery, DC−DC Converters

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Note 1)

Power Dissipation R

(Note 1)

q

JA

Continuous Drain Current R 10 s (Note 1)

Power Dissipation R

≤ 10 s

q

JA

(Note 1)

Continuous Drain Current R (Note 2)

Power Dissipation R

(Note 2)

q

JA

Continuous Drain Current R (Note 1)

Power Dissipation R

(Note 1)

q

JC

Pulsed Drain Current

Current Limited by Package TA = 25°C I

Operating Junction and Storage Temperature

Source Current (Body Diode) I

Drain to Source DV/DT dV/d

Single Pulse Drain−to−Source Avalanche Energy TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 47 Apk, L = 0.1 mH, RG = 25 W

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

to Minimize Conduction Losses

DS(on)

= 25°C unless otherwise stated)

J

Parameter Symbol Value Unit

DSS

GS

TA = 25°C

q

JA

TA = 100°C 13.8

TA = 25°C P

TA = 25°C

≤

q

JA

TA = 100°C 25

TA = 25°C P

I

D

I

D

Steady

State

q

JA

q

JC

TA = 25°C, tp = 10 ms

TA = 25°C

I

D

TA = 100°C 8.2

TA = 25°C P

TC = 25°C

D

I

D

TC = 85°C 59

TC = 25°C P

D

I

DM

Dmax

TJ,

T

STG

S

t

E

AS

T

L

30 V

±20 V

21.8

2.63 W

40

8.7 W

13

0.93 W

93

48 W

275 A

100 A

−55 to +150

44 A

6 V/ns

110 mJ

260 °C

A

°C

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V

(BR)DSS

30 V

G (4)

R

MAX ID MAX

DS(ON)

3.2 mW @ 10 V

4.2 mW @ 4.5 V

D (5,6)

S (1,2,3)

N−CHANNEL MOSFET

93 A

MARKING DIAGRAM

D

1

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

S

4935N

S

AYWWG

S

G

D

A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

NTMFS4935NT1G SO−8 FL

(Pb−Free)

NTMFS4935NT3G SO−8 FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1500 /

Tape & Reel

5000 /

Tape & Reel

D

†

September, 2010 − Rev. 6

1 Publication Order Number:

NTMFS4935N/D

NTMFS4935N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – Steady State (Note 4)

Junction−to−Ambient – (t ≤ 10 s) (Note 3)

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

R

q

JC

R

q

JA

R

q

JA

R

q

JA

2.6

47.5

134.8

14.4

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

T

J

DSS

GSS

/

VGS = 0 V, ID = 250 mA

VGS = 0 V,

VDS = 24 V

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V

VGS = 4.5 V

Forward Transconductance g

FS

VDS = 1.5 V, ID = 15 A 32 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 15 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 10 V, VDS = 15 V; ID = 30 A 49.4 nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

30 V

15

TJ = 25°C 1.0

TJ = 125°C 10

1.2 1.63 2.2 V

4.0 mV/°C

ID = 30 A 2.7 3.2

ID = 15 A 2.7

ID = 30 A 3.7 4.2

ID = 15 A 3.7

3579 4850

1264 1710

39 59

22

5.6

10.2

3.0

16.3

20

27.5

6.6

mV/°C

mA

mW

pF

nC

ns

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2

NTMFS4935N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter UnitMaxTypMinTest ConditionSymbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

r

d(OFF)

f

VGS = 10 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

SD

VGS = 0 V,

IS = 30 A

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

RR

a

b

RR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

PACKAGE PARASITIC VALUES

Source Inductance L

Drain Inductance L

Gate Inductance L

Gate Resistance R

S

D

G

TA = 25°C

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

11.2

18.7

28.3

12.1

TJ = 25°C 0.85 1.1

TJ = 125°C 0.72

44.4

21.6

22.8

45 nC

0.65 nH

0.005 nH

1.84 nH

1.1 2.0

ns

V

ns

W

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3

NTMFS4935N

TYPICAL CHARACTERISTICS

180

10 V

160

7 V

140

4.5

120

100

80

60

, DRAIN CURRENT (A)

40

D

I

20

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.014

0.013

0.012

0.011

0.010

0.009

0.008

0.007

0.006

0.005

0.004

, DRAIN−TO−SOURCE RESISTANCE (W)

0.003

0.002

DS(on)

R

3.0

Figure 3. On−Resistance vs. V

1.9

1.8

ID = 30 A

1.7

VGS = 10 V

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

, DRAIN−TO−SOURCE RES-

0.8

ISTANCE (NORMALIZED)

0.7

DS(on)

0.6

R

0.5

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

4.2 V VGS = 4.0 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

2.6 V

VGS (V) ID, DRAIN CURRENT (A)

TJ = 25°C

2.4 V

43210

ID = 30 A TJ = 25°C

9.08.07.0 106.05.04.02.0

GS

160

140

VDS = 10 V

120

100

80

60

, DRAIN CURRENT (A)

40

D

I

20

0

0.0050

0.0048

0.0046

0.0044

0.0042

0.0040

0.0038

0.0036

0.0034

0.0032

0.0030

0.0028

0.0026

0.0024

, DRAIN−TO−SOURCE RESISTANCE (W)

0.0022

0.0020

DS(on)

R

TJ = 25°C

Figure 4. On−Resistance vs. Drain Current and

TJ = 25°C

TJ = 125°C

VGS = 4.5 V

VGS = 10 V

Gate Voltage

50

10,000

, LEAKAGE (nA)

I

15012510075250−25−50

VGS = 0 V

1000

100

DSS

10

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

TJ = −55°C

2.5

TJ = 150°C

TJ = 125°C

TJ = 85°C

4.03.53.02.01.51.0

14012010080604020

160

30252015105

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4

NTMFS4935N

TYPICAL CHARACTERISTICS

4500

4000

3500

3000

2500

2000

1500

C, CAPACITANCE (pF)

1000

500

0

1000

100

t, TIME (ns)

10

11

VGS = 0 V

C

iss

TJ = 25°C

10

9

QT

8

7

6

5

C

oss

4

3

Qgd

Qgs

2

, GATE−TO−SOURCE VOLTAGE (V)

C

rss

25201510 3050

1

GS

0

V

15 40 50

VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

30

VDD = 15 V ID = 15 A VGS = 10 V

t

d(off)

t

f

t

r

t

d(on)

25

VGS = 0 V

20

TJ = 125°C

15

10

, SOURCE CURRENT (A)

S

I

5

TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A

45353025201050

TJ = 25°C

1

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

1000

100

10

0 ≤ VGS ≤ 20 V

1

Single Pulse

0.1

TC = 25°C

R

Limit

DS(on)

, DRAIN CURRENT (A)

D

I

Thermal Limit Package Limit

0.01

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

vs. Gate Resistance

Safe Operating Area

10 ms

100 ms

1 ms

10 ms

dc

100101

0.90.80.7 1.00.60.50.4

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

0

130 120

ID = 29 A 110 100

90 80 70 60 50 40 30

, SINGLE PULSE DRAIN−TO−

20

AS

E

10

SOURCE AVALANCHE ENERGY (mJ)

1001010.01

0

150125100755025

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

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5

1000

100

R(t) (°C/W)

10

1

0.1

NTMFS4935N

TYPICAL CHARACTERISTICS

Duty Cycle = 50%

20% 10%

5% 2%

1%

0.01

Single Pulse

70

50

40

30

GFS (S)

20

10

0

0.010.0010.00010.000010.000001

PULSE TIME (sec)

0.1 1 10 100 1000

Figure 13. Thermal Response

20 100506060 70 80 90

4030100

ID (A)

Figure 14. GFS vs. ID

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6

0.10 C

l

0.10 C

0.05 c

PIN 5

(EXPOSED PAD)

D

2

D1

1234

TOP VIEW

SIDE VIEW

b

8X

A0.10 BC

L

14

E2

G

D2

BOTTOM VIEW

2 X

e/2

0.20 C

A

E1

E

2

A

DETAIL A

K

M

L1

NTMFS4935N

PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)

CASE 488AA−01

ISSUE D

B

2 X

0.20 C

c

DETAIL A

SOLDERING FOOTPRINT*

3X 4X

1.270

0.965

1.330

2X

0.495

3.200

3 X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

4 X

q

A1

C

e

SEATING

PLANE

0.750

2X

0.905

STYLE 1:

PIN 1. SOURCE

4X

1.000

MILLIMETERS

A 0.90 1.00

A1 0.00 −−−

b 0.33 0.41 c 0.23 0.28

D 5.15 BSC D1 4.50 4.90 D2 3.50 −−−

E 6.15 BSC E1 5.50 5.80 E2 3.45 −−−

e 1.27 BSC G 0.51 0.61 K 0.51 −−−

L 0.51 0.61

L1 0.05 0.17

M 3.00 3.40

q 0 −−−

_

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

MAX

1.10

0.05

0.51

0.33

5.10

4.22

6.10

4.30

0.71

−−−

0.71

0.20

3.80 12

_

4.530

0.475

2X

1.530

4.560

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTMFS4935N/D

7