Datasheet ntmfs4898nf Datasheet

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NTMFS4898NF

Power MOSFET

30 V, 117 A, Single N−Channel, SO−8FL

Features

• Integrated Schottky Diode

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Note 1)

Power Dissipation

(Note 1)

Continuous Drain Current R 10 sec

Power Dissipation

t v 10 sec

JA,

Continuous Drain Current R (Note 2)

Power Dissipation

(Note 2)

Continuous Drain Current R (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Current limited by package TA = 25°C I

Operating Junction and Storage Temperature

Source Current (Body Diode) I

Drain to Source dV/dt dV/dt 6 V/ns

Single Pulse Drain−to−Source Avalanche Energy (V

= 39 Apk, L = 0.3 mH, RG = 25 W)

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

to Minimize Conduction Losses

DS(on)

= 25°C unless otherwise stated)

Parameter

TA = 25°C

Steady

State

tp=10ms

= 50 V, VGS = 10 V,

TA = 85°C 16.2

TA = 25°C P

TA = 25°C

TA = 85°C 26.5

TA = 25°C P

TA = 25°C

TA = 85°C 9.5

TA = 25°C P

TC = 25°C

TC = 85°C 84.4

TC = 25°C P

TA = 25°C I

Symbol Value Unit

DSS

Dmaxpkg

TJ,

STG

EAS 228 mJ

30 V

±20 V

22.5

2.72 W

36.7

7.23 W

13.2

0.93 W

117

73.5 W

234 A

100 A

−55 to +150

92 A

260 °C

°C

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(BR)DSS

30 V

MAX ID MAX

DS(ON)

3.0 mW @ 10 V

4.8 mW @ 4.5 V

N−CHANNEL MOSFET

117 A

MARKING DIAGRAM

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

S S S

4898NF AYWWG

ORDERING INFORMATION

Device Package Shipping

NTMFS4898NFT1G SO−8FL

NTMFS4898NFT3G SO−8FL

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy

and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

(Pb−Free)

Tape & Reel

†

1500 /

5000 /

June, 2010 − Rev. 2

1 Publication Order Number:

NTMFS4898NF/D

Page 2

NTMFS4898NF

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 2)

Junction−to−Ambient − t v 10 sec

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

1.7

134.2

17.3

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 1.0 mA 30 V

VGS = 0 V,

= 24 V

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 1.0 mA 1.5 2.5 V

VGS = 10 V

VGS = 4.5 V

Forward Transconductance g

VDS = 1.5 V, ID = 15 A 77 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 12 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 10 V, VDS = 15 V,

= 30 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = 4.5 V, VDS = 15 V,

= 15 A, RG = 3.0 W

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

TJ = 25 °C 40 500

4 mV/°C

ID = 30 A 2.2 3.0

ID = 15 A 2.2

ID = 30 A 3.4 4.8

ID = 15 A 3.4

3233

700

310

24.5

3.2

49.5

17.6

8.3

mV/°C

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NTMFS4898NF

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter UnitMaxTypMinTest ConditionSymbol

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = 10 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VGS = 0 V,

IS = 2.0 A

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

PACKAGE PARASITIC VALUES

Source Inductance

Drain Inductance L

Gate Inductance L

Gate Resistance R

TA = 25°C

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

11.3

17.8

37.3

5.6

TJ = 25°C 0.38 0.70

TJ = 125°C 0.31

26.7

13.7

13.0

17.3 nC

0.65

0.20

1.5

1.4

200

180

10 V

7.5 V

160

140

120

100

, DRAIN CURRENT (A)

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

VGS = 4.4 V

TYPICAL CHARACTERISTICS

160

TJ = 25°C

4.2 V

4.0 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

4.53.52.51.50.5

140

120

100

, DRAIN CURRENT (A)

543210

VDS = 10 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

4321

4.53.52.51.5

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NTMFS4898NF

TYPICAL CHARACTERISTICS

0.019

0.017

0.015

0.013

0.011

0.009

0.007

0.005

0.003

, DRAIN−TO−SOURCE RESISTANCE (W)

0.001

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

1.8 ID = 30 A

1.7 V

= 10 V

1.6

1.5

1.4

1.3

1.2

1.1

1.0

, DRAIN−TO−SOURCE

0.9

DS(on)

0.8

RESISTANCE (NORMALIZED)

0.7

0.6

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

4500

4000

3500

iss

3000

2500

2000

1500

C, CAPACITANCE (pF)

1000

500

oss

rss

42428 50

VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Voltage

Temperature

ID = 30 A T

= 25°C

TJ = 25°C V

= 0 V

0.005

TJ = 25°C

0.004 VGS = 4.5 V

0.003

VGS = 10 V

0.002

, DRAIN−TO−SOURCE RESISTANCE (W)

0.001

10987543

DS(on)

40 100

706050302010

9080

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1.0E−01

1.0E−02

1.0E−03

1.0E−04

, LEAKAGE (A)

DSS

1.0E−05

1.0E−06

150

1251007550250−25−50

VGS = 0 V

TJ = 150°C

TJ = 125°C

TJ = 25°C

1510 3020

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

, GATE−TO−SOURCE VOLTAGE (V)

3220161280

ID = 30 A T

= 25°C

VDD = 15 V VGS = 10 V

15 40

45353025201050

Drain−to−Source Voltage vs. Total Charge

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NTMFS4898NF

TYPICAL CHARACTERISTICS

1000

VDD = 15 V ID = 15 A VGS = 10 V

100

t, TIME (ns)

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

1000

100

VGS = 30 V

Single Pulse

0.1

TC = 25°C

, DRAIN CURRENT (A)

Thermal Limit

0.01

Package Limit

VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE(°C)

Figure 11. Maximum Rated Forward Biased

vs. Gate Resistance

Limit

DS(on)

Safe Operating Area

160

d(off)

d(on)

10 ms

100 ms

1 ms

10 ms

, SOURCE CURRENT (A)

100101

250

200

150

100

, SINGLE PULSE DRAIN−TO−

SOURCE AVALANCHE ENERGY (mJ)

1001010.1

VGS = 0 V T

= 25°C

0.4 0.6

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

ID = 39 A

75 1501251005025

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

0.80.70.50.30.20.1

(S)

140

120

100

30 120

VDS = 1.5 V

90756045150

105

DRAIN CURRENT (A)

Figure 13. gFS vs. Drain Current

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Page 6

0.05

0.10 C

1234

TOP VIEW

SIDE VIEW

A0.10 B

BOTTOM VIEW

2 X

e/2

0.20

DETAIL A

NTMFS4898NF

PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)

CASE 488AA−01

ISSUE D

2 X

0.20 C

DETAIL A

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

3 X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

4 X

A1 0.00 −−−

D1 4.50 4.90

D2 3.50 −−−

E1 5.50 5.80 E2 3.45 −−−

SEATING

PLANE

L1 0.05 0.17

MILLIMETERS

A 0.90 1.00

b 0.33 0.41 c 0.23 0.28

D 5.15 BSC

E 6.15 BSC

e 1.27 BSC G 0.51 0.61 K 0.51 −−−

L 0.51 0.61

M 3.00 3.40

q 0 −−−

MAX

1.10

0.05

0.51

0.33

5.10

4.22

6.10

4.30

0.71

−−−

0.71

0.20

3.80 12

SOLDERING FOOTPRINT*

3X 4X

1.330

3.200

0.965

0.495

1.270

4.560

1.530

0.750

0.905

0.475

1.000

4.530

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTMFS4898NF/D