Datasheet ntmfs4839n Datasheet

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NTMFS4839N

Power MOSFET

30 V, 66 A, Single N−Channel, SO−8FL

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Devices*

Applications

• Refer to Application Note AND8195/D

• CPU Power Delivery

• DC−DC Converters

to Minimize Conduction Losses

DS(ON)

(BR)DSS

30 V

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MAX ID MAX

DS(ON)

5.5 mW @ 10 V

9.5 mW @ 4.5 V

66 A

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Note 1)

Power Dissipation R

Continuous Drain Current R (Note 2)

Power Dissipation R

Continuous Drain Current R (Note 1)

Power Dissipation R

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode) I

Drain to Source DV/DT dV/dt 6 V/ns

Single Pulse Drain−to−Source Avalanche Energy TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 19 Apk, L = 1.0 mH, RG = 25 W

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

(Note 1)

(Note 2)

(Note 1)

= 25°C unless otherwise stated)

TA = 25°C

TA = 85°C 11

TA = 25°C P

TA = 25°C

Steady

State

TA = 85°C 7.0

TA = 25°C P

TC = 25°C

TC = 85°C 48

TC = 25°C P

TA = 25°C,

tp = 10 ms

DSS

TJ,

STG

EAS 180.5 mJ

30 V

±20 V

2.17 W

9.5

0.87 W

41.7 W

132 A

−55 to +150

35 A

260 °C

°C

D (5,6)

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING DIAGRAM

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)

4839N

AYWWG

ORDERING INFORMATION

Device Package Shipping

NTMFS4839NT1G SO−8FL

(Pb−Free)

NTMFS4839NT3G SO−8FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1500 /

Tape & Reel

5000 /

Tape & Reel

†

May, 2010 − Rev. 4

1 Publication Order Number:

NTMFS4839N/D

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NTMFS4839N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – Steady State (Note )

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

3.0

57.7

143.4

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

VDS = 24 V

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V to

11.5 V

VGS = 4.5 V

Forward Transconductance g

VDS = 15 V, ID = 15 A 14.7 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 12 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 11.5 V, VDS = 15 V;

ID = 30 A

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

d(ON)

d(OFF)

VGS = 4.5 V, VDS = 15 V, ID = 15 A,

RG = 3.0 W

VGS = 11.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

30 V

TJ = 25 °C 1

TJ = 125°C 10

1.5 2.5 V

5.8 mV/°C

ID = 30 A 4.5 5.5

ID = 15 A 4.5

ID = 30 A 8.4 9.5

ID = 15 A 8.4

1588

352

196

13 18

1.6

4.8

5.8

7.0

8.0

7.0

mV/°C

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NTMFS4839N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter UnitMaxTypMinTest ConditionSymbol

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

VGS = 0 V,

IS = 30 A

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V, dIS/dt = 100 A/ms,

= 30 A

PACKAGE PARASITIC VALUES

Source Inductance L

Drain Inductance L

Gate Inductance L

Gate Resistance R

TA = 25°C

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

6.0 V

, DRAIN CURRENT (A)

012345678

4.6 V

4.4 V

4.2 V

TJ = 25°C

4.0 V

3.5 V

VGS = 3.0 V

, DRAIN CURRENT (A)

123456

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C 0.9 1.2

TJ = 125°C 0.8

22.2

12.5

9.7

10.8 nC

0.93 nH

0.005 nH

1.84 nH

3.3

TC = 25°C

TC = 125°C

TC = −55°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

0.012

0.01

0.008

0.006

, DRAIN−TO−SOURCE RESISTANCE (W)

0.004

2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

ID = 30 A

TJ = 25°C

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Figure 2. Transfer Characteristics

0.01

0.009

0.008

VGS = 4.5 V

0.007

0.006

0.005 VGS = 11.5 V

0.004

0.003

0.002

, DRAIN−TO−SOURCE RESISTANCE (W)

0.001

DS(on)

10 15 20 25 30 35 40

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Temperature

Page 4

NTMFS4839N

1.80 ID = 30 A

= 10 V & 4.5 V

1.60

1.40

1.20

1.00

(NORMALIZED)

0.80

, DRAIN−TO−SOURCE RESISTANCE

0.60

DS(on)

−50 250−25 50 75 125

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000

C, CAPACITANCE (pF)

ISS

RSS

800 600 400 200

1510 5 0 5 1015202530

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

100000

VGS = 0 V

10000

1000

, LEAKAGE (nA)

100

150

4 8 12 16 20 24 28

Figure 6. Drain−to−Source Leakage Current

TJ = 25°C

ISS

OSS

RSS

Figure 7. Capacitance Variation

TJ = 150°C

TJ = 125°C

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

versus Voltage

ID = 30 A TJ = 25°C

GATE−TO−SOURCE VOLTAGE (V)

GS,

0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30

20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

DRAIN−TO−SOURCE VOLTAGE (V)

DS,

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge

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NTMFS4839N

1000

VDS = 15 V

= 30 A

VGS = 11.5 V

100

d(off)

t, TIME (ns)

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

1000

VGS = 20 V Single Pulse TC = 25°C

100

, DRAIN CURRENT (A)

0.1

0.1 1 10 100

Limit

DS(on)

Thermal Limit Package Limit

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

d(on)

10 ms

100 ms

1 ms

10 ms

VGS = 0 V

TJ = 25°C

, SOURCE CURRENT (A)

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

200 190 180 170 160 150 140 130 120

110

100

90 80 70 60 50 40 30

AVALANCHE ENERGY (mJ)

20 10

EAS, SINGLE PULSE DRAIN−TO−SOURCE

25 50 75 100 125 150

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

ID = 19 A

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Page 6

0.10 C

0.05 c

1234

TOP VIEW

SIDE VIEW

A0.10 BC

BOTTOM VIEW

2 X

e/2

0.20 C

DETAIL A

NTMFS4839N

PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)

CASE 488AA−01

ISSUE D

2 X

0.20 C

DETAIL A

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

3 X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

4 X

A1 0.00 −−−

D1 4.50 4.90

D2 3.50 −−−

E1 5.50 5.80 E2 3.45 −−−

SEATING

PLANE

L1 0.05 0.17

MILLIMETERS

A 0.90 1.00

b 0.33 0.41 c 0.23 0.28

D 5.15 BSC

E 6.15 BSC

e 1.27 BSC G 0.51 0.61 K 0.51 −−−

L 0.51 0.61

M 3.00 3.40

q 0 −−−

MAX

1.10

0.05

0.51

0.33

5.10

4.22

6.10

4.30

0.71

−−−

0.71

0.20

3.80 12

SOLDERING FOOTPRINT*

3X 4X

1.330

3.200

0.965

0.495

1.270

4.560

1.530

0.750

0.905

0.475

1.000

4.530

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTMFS4839N/D