Datasheet ntmfs4836n Datasheet

NTMFS4836N

Power MOSFET

30 V, 90 A, Single N−Channel, SO−8FL

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Devices

Applications

• Refer to Application Note AND8195/D

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

to Minimize Conduction Losses

DS(on)

V

(BR)DSS

30 V

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R

MAX ID MAX

DS(ON)

4.0 mW @ 10 V

6.0 mW @ 4.5 V

D (5,6)

90 A

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Note 1)

Power Dissipation R

Continuous Drain Current R (Note 2)

Power Dissipation R

Continuous Drain Current R (Note 1)

Power Dissipation R

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode) I

Drain to Source DV/DT dV/dt 6 V/ns

Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 22 Apk, L = 1.0 mH, RG = 25 W)

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

(Note 1)

q

JA

(Note 2)

q

JA

(Note 1)

q

JC

q

JA

q

JA

q

JC

= 25°C unless otherwise stated)

J

TA = 25°C

TA = 85°C 13

TA = 25°C P

TA = 25°C

Steady

State

TA = 85°C 8

TA = 25°C P

TC = 25°C

TC = 85°C 65

TC = 25°C P

TA = 25°C,

tp = 10 ms

DSS

GS

I

D

ID

D

I

D

I

DM

TJ,

T

STG

S

EAS 242 mJ

T

L

30 V

±20 V

18

2.25 W

11

0.89 W

90

55.6 W

180 A

−55 to +150

46 A

260 °C

A

°C

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING DIAGRAM

D

1

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)

S S S G

4836N

AYWWG

G

D

ORDERING INFORMATION

Device Package Shipping

NTMFS4836NT1G SO−8FL

(Pb−Free)

NTMFS4836NT3G SO−8FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1500 /

Tape & Reel

5000 /

Tape & Reel

D

†

May, 2010 − Rev. 6

1 Publication Order Number:

NTMFS4836N/D

NTMFS4836N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – Steady State (Note 4)

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

R

q

JC

R

q

JA

R

q

JA

2.25

55.6

140.8

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage Temperature Coefficient

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

VDS = 24 V

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V to

11.5 V

VGS = 4.5 V

Forward Transconductance g

FS

VDS = 15 V, ID = 15 A 24 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 12 V

VGS = 4.5 V, VDS = 15 V;

VGS = 11.5 V, VDS = 15 V;

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

r

d(OFF)

f

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

VGS = 11.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

ID = 30 A

30 V

25

TJ = 25 °C 1

TJ = 125°C 10

1.5 2.5 V

6.0 mV/°C

ID = 30 A 2.8 4.0

ID = 15 A 2.8

ID = 30 A 4.8 6.0

ID = 15 A 4.8

2677

565

307

20 28

3.2

8.0

45

14

30

20

12

8.0

27

31

7.0

mV/°C

mA

mW

pF

nC

ns

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2

NTMFS4836N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

PACKAGE PARASITIC VALUES

Source Inductance L

Drain Inductance L

Gate Inductance L

Gate Resistance R

RR

SD

a

b

RR

S

D

G

VGS = 0 V,

IS = 30 A

TJ = 25°C 0.83 1.2

TJ = 125°C 0.7

VGS = 0 V, dIS/dt = 100 A/ms,

= 30 A

I

S

TA = 25°C

27.1

13.8

ns

13.3

16 nC

0.65 nH

0.005 nH

1.84 nH

1.2

W

V

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3

NTMFS4836N

TYPICAL PERFORMANCE CURVES

120

110

100

90 80

70

60

50 40

30

, DRAIN CURRENT (AMPS)

20

D

I

10

0

021

VGS = 4.5 to 5.0 V

3

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.030

0.025

0.020

0.015

110

TJ = 25°C

40

5

768910

4.0 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

ID = 30 A TJ = 25°C

0.008

0.007

0.006

0.005

0.004

VDS ≥ 10 V

100

90

80

70

60

50

40

30

, DRAIN CURRENT (AMPS)

20

D

I

10

0

TJ = 25°C

TJ = 125°C

1

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

23

TJ = −55°C

46

VGS = 4.5 V

5

0.010

0.005

, DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on)

2

R

4

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance vs. Gate−to−Source

1.80 ID = 30 A V

= 10 V & 4.5 V

1.60

1.40

1.20

1.00

(NORMALIZED)

0.80

, DRAIN−TO−SOURCE RESISTANCE

0.60

DS(on)

R

GS

−50 250−25 50 75

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.003

0.002

0.001

, DRAIN−TO−SOURCE RESISTANCE (W)

0

615

8

10 12

DS(on)

R

10

20

25 30 55

ID, DRAIN CURRENT (AMPS)

VGS = 11.5 V

35

40 5045

Figure 4. On−Resistance vs. Drain Current and

Voltage

100

125

100,000

10,000

1,000

, LEAKAGE (nA)

100

DSS

I

150

VGS = 0 V

10

8

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Gate Voltage

TJ = 150°C

TJ = 125°C

1612 304

20

24

28

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

60

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4

NTMFS4836N

TYPICAL PERFORMANCE CURVES

5000

4500

C

iss

TJ = 25°C

4000

3500

3000

2500

2000

C

rss

C

iss

1500

C, CAPACITANCE (pF)

1000

500

C

oss

0

15 0 10 15

55

10 25

V

GS

V

DS

20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDS = 15 V ID = 15 A

100

t, TIME (ns)

10

VGS = 11.5 V

t

f

t

d(off)

t

r

t

d(on)

30

12

Q

T

10

8

V

DS

V

GS

6

Q

4

2

Q

gs

gd

ID = 30 A TJ = 25°C

0

, GATE−TO−SOURCE VOLTAGE (VOLTS)

0

GS

V

QG, TOTAL GATE CHARGE (nC)

2010 25 4540

155

30

35

Figure 8. Gate−To−Source and Drain−To−Source

Voltage vs. Total Charge

30

VGS = 0 V

TJ = 25°C

25

20

15

10

20

18

16

14

12

10

8

6

4

2

0

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

1000

100

10

VGS = 20 V SINGLE PULSE TC = 25°C

1

, DRAIN CURRENT (AMPS)

D

I

0.1

0.1 1 100

R

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

10

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1 ms

10 ms

dc

, SOURCE CURRENT (AMPS)

5

S

I

0

0.5 0.6

0.4 1.1

0.7 0.8

0.9 1.0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

260 240 220 200 180 160 140 120 100

80 60 40

AVALANCHE ENERGY (mJ)

20

, SINGLE PULSE DRAIN−TO−SOURCE

0

AS

25

E

50 75

100 125

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

ID = 22 A

150

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5

NTMFS4836N

TYPICAL PERFORMANCE CURVES

100

10

125°C

100°C

, DRAIN CURRENT (AMPS)

D

I

1

125°C

10

PULSE WIDTH (ms)

10001 100

Figure 13. Avalanche Characteristics

10000

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6

0.10 C

0.05 c

D

2

D1

1234

TOP VIEW

SIDE VIEW

b

8X

A0.10 BC

L

14

E2

6

G

D2

BOTTOM VIEW

56

5

2 X

e/2

0.20 C

A

E1

E

2

A

DETAIL A

K

M

L1

NTMFS4836N

PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)

CASE 488AA−01

ISSUE D

B

2 X

0.20 C

c

DETAIL A

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

3 X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

4 X

q

A1

C

e

SEATING

PLANE

MILLIMETERS

A 0.90 1.00

A1 0.00 −−−

b 0.33 0.41

c 0.23 0.28

D 5.15 BSC D1 4.50 4.90 D2 3.50 −−−

E 6.15 BSC E1 5.50 5.80 E2 3.45 −−−

e 1.27 BSC G 0.51 0.61 K 0.51 −−− L 0.51 0.61

L1 0.05 0.17

M 3.00 3.40

q 0 −−−

_

MAX

1.10

0.05

0.51

0.33

5.10

4.22

6.10

4.30

0.71

−−−

0.71

0.20

3.80 12

_

SOLDERING FOOTPRINT*

3X 4X

1.330

3.200

0.965

2X

0.495

1.270

4.560

2X

1.530

0.750

2X

0.905

0.475

4X

1.000

4.530

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTMFS4836N/D

7