Datasheet ntmfs4835n Datasheet

NTMFS4835N

Power MOSFET

30 V, 104 A, Single N−Channel, SO−8FL

Features

• Low R

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Devices*

Applications

• Refer to Application Note AND8195/D

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

to Minimize Conduction Losses

DS(on)

V

(BR)DSS

30 V

http://onsemi.com

R

MAX ID MAX

DS(ON)

3.5 mW @ 10 V

5.0 mW @ 4.5 V

D (5,6)

104 A

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Note 1)

Power Dissipation R

Continuous Drain Current R (Note 2)

Power Dissipation R

Continuous Drain Current R (Note 1)

Power Dissipation R

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode) I

Drain to Source DV/DT dV/d

Single Pulse Drain−to−Source Avalanche Energy TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 28 Apk, L = 1.0 mH, RG = 25 W

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

(Note 1)

q

JA

(Note 2)

q

JA

(Note 1)

q

JC

q

JA

q

JA

q

JC

= 25°C unless otherwise stated)

J

TA = 25°C

TA = 85°C 14

TA = 25°C P

TA = 25°C

Steady

State

TA = 85°C 9.0

TA = 25°C P

TC = 25°C

TC = 85°C 75

TC = 25°C P

TA = 25°C,

tp = 10 ms

T

I

TJ,

E

DSS

GS

I

D

I

D

I

D

DM

STG

S

AS

T

L

t

30 V

±20 V

20

2.27 W

12

0.89 W

104

62.5 W

208 A

−55 to +150

52 A

6 V/ns

392 mJ

260 °C

A

°C

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING DIAGRAM

D

S

4835N

1

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)

S

AYWWG

S

G

D

ORDERING INFORMATION

Device Package Shipping

NTMFS4835NT1G SO−8FL

(Pb−Free)

NTMFS4835NT3G SO−8FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1500 /

Tape & Reel

5000 /

Tape & Reel

D

†

May, 2010 − Rev. 6

1 Publication Order Number:

NTMFS4835N/D

NTMFS4835N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – Steady State (Note )

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

R

q

JC

R

q

JA

R

q

JA

2.0

55.1

140.1

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

T

J

DSS

GSS

/

VGS = 0 V, ID = 250 mA

VGS = 0 V,

VDS = 24 V

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V to

11.5 V

VGS = 4.5 V

Forward Transconductance g

FS

VDS = 15 V, ID = 15 A 21 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 12 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 11.5 V, VDS = 15 V;

ID = 30 A

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

r

d(OFF)

f

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDS = 15 V, ID = 15 A,

RG = 3.0 W

VGS = 11.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

30 V

22.4

TJ = 25 °C 1.0

TJ = 125°C 10

1.5 1.9 2.5 V

5.3 mV/°C

ID = 30 A 2.9 3.5

ID = 15 A 2.5

ID = 30 A 4.3 5.0

ID = 15 A 3.9

3100

670

360

22 39

4.7

8.3

8.8

52

16

31

22

13

10

23

30

10

mV/°C

mA

mW

pF

nC

ns

http://onsemi.com

2

NTMFS4835N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter UnitMaxTypMinTest ConditionSymbol

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

SD

VGS = 0 V,

IS = 30 A

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

RR

a

b

RR

VGS = 0 V, dIS/dt = 100 A/ms,

= 30 A

I

S

PACKAGE PARASITIC VALUES

Source Inductance L

Drain Inductance L

Gate Inductance L

Gate Resistance R

S

D

G

TA = 25°C

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

TJ = 25°C 0.77 1.0

TJ = 125°C 0.70

27 50

15

12

18 nC

0.65 nH

0.005 nH

1.84 nH

1.3 5.0

V

ns

W

http://onsemi.com

3

NTMFS4835N

TYPICAL PERFORMANCE CURVES

170

150

130

110

90

70

50

, DRAIN CURRENT (AMPS)

30

D

I

10

0

021

VGS = 5.0 to 10 V

3

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.030

0.025

0.020

0.015

170

4.0 V

TJ = 25°C

40

5

768910

3.5 V

3.2 V

3.0 V

2.8 V

2.6 V

ID = 30 A TJ = 25°C

, DRAIN CURRENT (AMPS)

D

I

0.008

0.007

0.006

0.005

0.004

150

130

110

90

70

50

30

10

VDS ≥ 10 V

TJ = 25°C

TJ = −55°CTJ = 125°C

0

1

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

23

VGS = 4.5 V

46

5

0.010

0.005

, DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on)

2

R

4

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

615

Figure 3. On−Resistance vs. Gate−to−Source

2.0

ID = 30 A V

= 10 V

GS

1.5

1.0

(NORMALIZED)

0.5

, DRAIN−TO−SOURCE RESISTANCE

0

DS(on)

−50 250−25 50 75

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

Voltage

0.003

0.002

0.001

, DRAIN−TO−SOURCE RESISTANCE (W)

0

8

10 12

DS(on)

R

10

20

25 30 55

ID, DRAIN CURRENT (AMPS)

VGS = 11.5 V

35

40 5045

60

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

100,000

VGS = 0 V

100

125

10,000

1,000

, LEAKAGE (nA)

DSS

I

100

150

10

8

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 150°C

TJ = 125°C

1612 304

20

24

28

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

http://onsemi.com

4

NTMFS4835N

TYPICAL PERFORMANCE CURVES

5000

4500

C

iss

TJ = 25°C

4000

3500

3000

C

iss

2500

2000

C

rss

1500

C, CAPACITANCE (pF)

1000

500

C

oss

0

15 0 10 15

55

10 25

V

GS

V

DS

20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDS = 15 V ID = 15 A

100

t, TIME (ns)

10

VGS = 11.5 V

t

d(off)

t

f

t

r

t

d(on)

30

12

Q

T

10

V

DS

V

GS

8

6

Q

4

Q

gs

gd

2

0

, GATE−TO−SOURCE VOLTAGE (VOLTS)

0

GS

V

2010 25 504540

155

QG, TOTAL GATE CHARGE (nC)

30

35

Figure 8. Gate−To−Source and Drain−To−Source

Voltage vs. Total Charge

30

VGS = 0 V

25

TJ = 25°C

20

15

10

ID = 30 A TJ = 25°C

55

20

18

16

14

12

10

8

6

4

2

0

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

1000

100

10

VGS = 20 V SINGLE PULSE TC = 25°C

1

, DRAIN CURRENT (AMPS)

D

I

0.1

0.1 1 100

R

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

10

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1 ms

10 ms dc

, SOURCE CURRENT (AMPS)

5

S

I

0

0.5 0.6

0.4 1.1

0.7 0.8

0.9 1.0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

400

360

320

280

240

200

160

120

80

AVALANCHE ENERGY (mJ)

40

, SINGLE PULSE DRAIN−TO−SOURCE

0

AS

25

E

50 75

100 125

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

ID = 28 A

150

http://onsemi.com

5

1000

100

10

, DRAIN CURRENT (AMPS)

D

I

NTMFS4835N

TYPICAL PERFORMANCE CURVES

25°C

100°C

125°C

1

10

PULSE WIDTH (ms)

1000

100001 100

Figure 13. Avalanche Characteristics

http://onsemi.com

6

0.10 C

l

0.10 C

0.05 c

D

2

D1

1234

TOP VIEW

SIDE VIEW

b

8X

A0.10 BC

L

14

E2

6

G

D2

BOTTOM VIEW

56

5

2 X

e/2

0.20 C

A

E1

E

2

A

DETAIL A

K

M

L1

NTMFS4835N

PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)

CASE 488AA−01

ISSUE D

B

2 X

0.20 C

c

DETAIL A

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

3 X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

4 X

q

A1

C

e

SEATING

PLANE

MILLIMETERS

A 0.90 1.00

A1 0.00 −−−

b 0.33 0.41

c 0.23 0.28

D 5.15 BSC D1 4.50 4.90 D2 3.50 −−−

E 6.15 BSC E1 5.50 5.80 E2 3.45 −−−

e 1.27 BSC G 0.51 0.61 K 0.51 −−− L 0.51 0.61

L1 0.05 0.17

M 3.00 3.40

q 0 −−−

_

MAX

1.10

0.05

0.51

0.33

5.10

4.22

6.10

4.30

0.71

−−−

0.71

0.20

3.80 12

_

SOLDERING FOOTPRINT*

3X 4X

1.330

3.200

0.965

2X

0.495

1.270

4.560

2X

1.530

0.750

2X

0.905

0.475

4X

1.000

4.530

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

http://onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loca Sales Representative

NTMFS4835N/D

7