Datasheet ntmfs4744n-d Datasheet

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NTMFS4744N

Power MOSFET

30 V, 53 A, Single N-Channel, SO-8 FL

Features

•Low RDS(on) to Minimize Conduction Losses

•Low Capacitance to Minimize Driver Losses

•Optimized Gate Charge to Minimize Switching Losses

•These are Pb-Free Devices

Applications

•CPU Power Delivery

•DC-DC Converters

•Low Side Switching

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain-to-Source Voltage V Gate-to-Source Voltage V

Continuous Drain Current R (Note 1)

Power Dissipation R

Continuous Drain Current R (Note 2)

Power Dissipation R

Continuous Drain Current R (Note 1)

Power Dissipation R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain-to-Source Avalanche

Energy (VDD = 50 V, VGS = 10 V, IL = 24 Apk, L = 1.0 mH, RG = 25 W)

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

(Note 1)

(Note 2)

(Note 1)

= 25°C unless otherwise stated)

TA = 25°C

TA = 85°C 8.0

TA = 25°C P

TA = 25°C

Steady

State

tp=10ms

TA = 85°C 5.0

TA = 25°C P

TC = 25°C

TC = 85°C 38

TC = 25°C P

TA = 25°C I

DSS

STG

EAS 286 mJ

30 V 20 V 11

2.2 W

7.0

0.88 W

47.2 W

106 A

-55 to +150

46 A

260 °C

°C

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(BR)DSS

30 V

DS(on)

10 mW @ 10 V

14 mW @ 4.5 V

N-Channel

MAX

ID MAXV

53 A

MARKING DIAGRAM

SO-8 FLAT LEAD

CASE 488AA

STYLE 1

4744N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)

S S S G

4744N

AYWWG

ORDERING INFORMATION

Device Package Shipping

NTMFS4744NT1G SO-8 FL

(Pb-Free)

NTMFS4744NT3G 5000 Tape & ReelSO-8 FL

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1500 Tape & Reel

†

© Semiconductor Components Industries, LLC, 2007

July, 2007 - Rev. 4

1 Publication Order Number:

NTMFS4744N/D

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NTMFS4744N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction-to-Case (Drain)

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – Steady State (Note 2)

1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.

2. Surface-mounted on FR4 board using the minimum recommended pad size.

2.65

56.9

142.4

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

VDS = 24 V

VDS = 0 V, VGS = 20 V 100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V

Negative Threshold Temperature Coefficient V

Drain-to-Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V to

11.5 V

VGS = 4.5 V

Forward Transconductance g

VDS = 15 V, ID = 15 A 25 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Total Gate Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 12 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 11.5 V, VDS = 15 V;

ID = 30 A

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = 4.5 V, VDS = 15 V, ID = 30 A,

RG = 3.0 W

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

30 V

TJ = 25 °C 1.0

TJ = 125°C 10

1.5 2.5 V

5.0 mV/°C

ID = 30 A 7.6

ID = 15 A 7.3

ID = 10 A 7.3 10

ID = 30 A 10.4

ID = 15 A 10.1

ID = 10 A 9.9 14

1300

550

132

10 17

0.9

1.8

5.9

25 37

203

mV/°C

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NTMFS4744N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter UnitMaxTypMinTest ConditionSymbol

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = 11.5 V, VDS = 15 V,

ID = 30 A, RG = 3.0 W

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

VGS = 0 V,

IS = 30 A

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

PACKAGE PARASITIC VALUES

Source Inductance L

Drain Inductance L

Gate Inductance L

Gate Resistance R

TA = 25°C

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

7.0

4.7

TJ = 25°C 0.78 1.2

TJ = 125°C 0.7

37 60

37 nC

0.65

0.005

1.84

2.0 5.0

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NTMFS4744N

TYPICAL PERFORMANCE CURVES

10 V

4.5 V

, DRAIN CURRENT (AMPS)

3.5 V

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

TJ = 25°C

3 V

2.8 V

2.6 V

2.4 V

4 10

, DRAIN CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

TJ = -55°C

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.1 ID = 30 A

0.08

0.06

0.020

0.016

0.012

VGS = 10 V

TJ = 125°C

0.04

0.02

, DRAIN-TO-SOURCE RESISTANCE (W)

DS(on)

2.6

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

3.4

3.8

Figure 3. On-Resistance vs. Gate-to-Source

Voltage

1.8 ID = 9 A V

= 10 V

1.6

1.4

1.2

1.0

(NORMALIZED)

0.8

, DRAIN-TO-SOURCE RESISTANCE

0.6

DS(on)

-50 50250-25 75 125100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation with

Temperature

4.2

4.6

0.008

0.004

, DRAIN-TO-SOURCE RESISTANCE (W)

DS(on)

Figure 4. On-Resistance vs. Drain Current and

1000

100

, LEAKAGE (nA)

DSS

0.1

150

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain-to-Source Leakage Current

TJ = 25°C

TJ = -55°C

ID, DRAIN CURRENT (AMPS)

15 20

Temperature

TJ = 125°C

TJ = 85°C

TJ = 25°C

1812 300

vs. Drain Voltage

255

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NTMFS4744N

TYPICAL PERFORMANCE CURVES

2000

1600

1200

800

C, CAPACITANCE (pF)

400

0 8 12 20

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)

iss

oss

rss

TJ = 25°C

VGS = 0 V

Figure 7. Capacitance Variation

1000

100

t, TIME (ns)

d(off)

d(on)

, GATE-TO-SOURCE VOLTAGE (VOLTS)

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate-To-Source and Drain-To-Source

Voltage vs. Total Charge

VGS = 0 V

TJ = 150°C

TJ = 25°C

ID = 30 A TJ = 25°C

VDS = 15 V ID = 30 A

1 10 100

RG, GATE RESISTANCE (OHMS)

VGS = 4.5 V

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

1000

VGS = 2.0 V SINGLE PULSE

100

TC = 25°C

, DRAIN CURRENT (A)

0.1

0.01

0.1 1 10 100

RDS(on) LIMIT Thermal Limit Package Limit

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1 ms

10 ms

, SOURCE CURRENT (AMPS)

0.1

0.2

VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

300

200

100

AVALANCHE ENERGY (mJ)

EAS, SINGLE PULSE DRAIN-TO-SOURCE

50 75 175

TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

0.60.4

100 125

0.8

ID = 24 A

150

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Page 6

100

, DRAIN CURRENT (AMPS)

NTMFS4744N

TYPICAL PERFORMANCE CURVES

25°C

125°C

100°C

PULSE WIDTH (ms)

10001 100

Figure 13. Avalanche Characteristics

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Page 7

NTMFS4744N

PACKAGE DIMENSIONS

DFN6 5x6, 1.27P (SO8 FL)

CASE 488AA-01

ISSUE C

0.10 C

0.05 c

1234

TOP VIEW

SIDE VIEW

A0.10 BC

BOTTOM VIEW

2 X

e/2

0.20 C

DETAIL A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE

2 X

0.20 C

4 X

3 X

SEATING

PLANE

DETAIL A

BURRS.

DIM MIN NOM

A1 0.00 ---

D1 4.50 4.90 D2 3.50 ---

MILLIMETERS

A 0.90 1.00

b 0.33 0.41 c 0.23 0.28 D 5.15 BSC

E 6.15 BSC E1 5.50 5.80 E2 3.45 ---

e 1.27 BSC

G 0.51 0.61

K 0.51 ---

L 0.51 0.61 L1 0.05 0.17

M 3.00 3.40

q 0 ---

MAX

1.10

0.05

0.51

0.33

5.10

4.22

6.10

4.30

0.71

---

0.71

0.20

3.80 12

SOLDERING FOOTPRINT*

3X 4X

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

1.330

3.200

0.965

0.495

1.270

4.560

1.530

0.750

0.905

0.475

1.000

4.530

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTMFS4744N/D