Datasheet ntmfs4707n Datasheet

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NTMFS4707N

Power MOSFET

30 V, 17 A, Single N-Channel, SOIC-8 Flat Lead

Features

•Fast Switching Times

•Low Gate Charge

•Low R

•Low Inductance SOIC-8 Package

•These are Pb-Free Devices

Applications

•Notebooks, Graphics Cards

•DC-DC Converters

•Synchronous Rectification

MAXIMUM RATINGS (T

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current

Power Dissipation (Note 1)

Continuous Drain Current

Power Dissipation (Note 2) TA = 25°C P

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Single Pulse Drain-to-Source Avalanche Energy

Lead Temperature for Soldering Purposes

THERMAL RESISTANCE MAXIMUM RATINGS

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t ≤ 10 s (Note 1)

Junction-to-Ambient – Steady State (Note 2)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 in sq pad size

2. Surface-mounted on FR4 board using the minimum recommended pad size

DS(on)

= 25°C unless otherwise stated)

Parameter Symbol Value Unit

(Note 1)

(Note 2)

(VDD = 25 V, VGS = 10 V, IPK = 7.0 A, L = 10 mH, RG = 25 W)

(1/8” from case for 10 s)

Parameter Symbol Value Unit

(Cu area = 1.127 in sq [1 oz] including traces).

(Cu area = 0.412 in sq).

Steady

State

t ≤ 10 s TA = 25°C 17

Steady

State

t ≤ 10 s 6.25

Steady

State

TA = 25°C

TA = 85°C 7.4

TA = 25°C

TA = 85°C 4.9

tp ≤ 10 ms

DSS

STG

30 V

±20 V

10.2

2.3

6.9

1.0 W

51 A

-55 to 150

6.25 A

245 mJ

260 °C

122.5

°C

°C/W

http://onsemi.com

(BR)DSS

30 V

Typ

DS(on)

10 mW @ 10 V

13.5 mW @ 4.5 V

N-Channel

ID MaxV

17 A

MARKING DIAGRAM &

PIN ASSIGNMENT

SOIC-8 FLAT LEAD

CASE 488AA

STYLE 1

4707N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

(Note: Microdot may be in either location)

S S S G

4707N

AYWWG

ORDERING INFORMATION

Device Package Shipping

NTMFS4707NT1G SOIC-8 FL

(Pb-Free)

NTMFS4707NT3G 5000/Tape & ReelSOIC-8 FL

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1500/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2007

July, 2007 - Rev. 3

1 Publication Order Number:

NTMFS4707N/D

Page 2

NTMFS4707N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V, VDS = 24 V

VDS = 0 V, VGS = ±20V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V

Negative Threshold

Temperature Coefficient

Drain-to-Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 10 A 10 13 mW

VGS = 4.5 V, ID = 8.0 A 13.5 17

Forward Transconductance g

VDS = 15 V, ID = 10 A 20 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Gate Resistance R

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1.0 MHz, VDS = 24 V

VGS = 4.5 V, VDS = 15 V; ID = 10 A

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(on)

d(off)

VGS = 10 V, VDD = 15 V, ID = 1.0 A,

RG = 3.0 W

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V, IS = 6.25 A

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 6.25 A

3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

30 V

6.5 mV/°C

TJ = 25°C 1.0 mA

TJ = 125°C 50

1.0 2.5 V

5.0 mV/°C

735

295

7.5 15

1.1

2.0

3.6

2.4

6.0

5.0

TJ = 25°C 0.79 1.0

TJ = 125°C 0.59

19 nC

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NTMFS4707N

TYPICAL CHARACTERIZATIONS

DRAIN CURRENT (AMPS)

4.5 V

4 V

3.8 V

3.4 V

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. On-Region Characteristics

0.020

0.015

0.010

VGS = 10 V

TJ = 125°C

TJ = 25°C

TJ = -55°C

TJ = 25°C

3 V

2.8 V

2.6 V

2.4 V

VDS ≥ 10 V

DRAIN CURRENT (AMPS)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

TJ = 125°C

TJ = 25°C

TJ = -55°C

Figure 2. Transfer Characteristics

0.018 TJ = 25°C

0.014

0.010

VGS = 4.5 V

VGS = 10 V

0.005

DRAIN-TO-SOURCE RESISTANCE (W)

DS(on),

515

10 20

ID, DRAIN CURRENT (AMPS)

Figure 3. On-Resistance vs. Drain Current and

Temperature

2.0

ID = 17 A

1.8 VGS = 10 V

1.6

1.4

1.2

DRAIN-TO-SOURCE

1.0

DS(on),

0.8

RESISTANCE (NORMALIZED)

0.6

-50 0-25 25

TJ, JUNCTION TEMPERATURE (°C)

50 150

DRAIN-TO-SOURCE RESISTANCE (W)

25 30

125100 0

100000

, LEAKAGE (nA)

0.006

0.002

DS(on),

8160

ID, DRAIN CURRENT (AMPS)

12 20

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

10000

TJ = 150°C

1000

DSS

100

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

TJ = 125°C

10 20

Figure 5. On-Resistance Variation with

Temperature

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Figure 6. Drain-to-Source Leakage Current

vs. Voltage

Page 4

NTMFS4707N

TYPICAL CHARACTERIZATIONS

1600

1400

VDS = 0 V VGS = 0 V

ISS

TJ = 25°C

1200

1000

RSS

ISS

800

600

C, CAPACITANCE (pF)

400

200

OSS

RSS

10 0 5 105

15 20 25

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

100

VDD = 15 V ID = 1 A VGS = 4.5 V

d(off)

d(on)

t, TIME (ns)

, GATE-TO-SOURCE VOLTAGE (V)

= 4.5 V

ID = 10 A TJ = 25°C

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate-To-Source and

Drain-To-Source Voltage vs. Total Charge

VGS = 0 V TJ = 25°C

102468

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

1000

VGS = 20 V SINGLE PULSE TC = 25°C

100

, DRAIN CURRENT (AMPS)

0.1

0.01

0.1

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1 ms

10 ms

100

, SOURCE CURRENT (AMPS)

0.2

VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

350

300

250

200

150

100

AVALANCHE ENERGY (mJ)

EAS, SINGLE PULSE DRAIN-TO-SOURCE

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

0.40

0.80.6

ID = 7 A

10025

12575

150

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Page 5

NTMFS4707N

3.PACKAGE DIMENSIONS

DFN6 5x6, 1.27P (SO8 FL)

CASE 488AA-01

ISSUE C

0.10 C

0.05 c

1234

TOP VIEW

SIDE VIEW

A0.10 BC

BOTTOM VIEW

2 X

e/2

0.20 C

DETAIL A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE

2 X

0.20 C

4 X

3 X

SEATING

PLANE

DETAIL A

BURRS.

DIM MIN NOM

MILLIMETERS

A 0.90 1.00

A1 0.00 ---

b 0.33 0.41 c 0.23 0.28

D 5.15 BSC D1 4.50 4.90 D2 3.50 ---

E 6.15 BSC E1 5.50 5.80 E2 3.45 ---

e 1.27 BSC

G 0.51 0.61

K 0.51 ---

L 0.51 0.61 L1 0.05 0.17

M 3.00 3.40

q 0 ---

MAX

1.10

0.05

0.51

0.33

5.10

4.22

6.10

4.30

0.71

---

0.71

0.20

3.80 12

SOLDERING FOOTPRINT*

3X 4X

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

1.330

3.200

0.965

0.495

1.270

4.560

1.530

0.750

0.905

0.475

1.000

4.530

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTMFS4707N/D