Datasheet ntmfs4121n Datasheet

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Page 1

NTMFS4121N

Power MOSFET

30 V, 29 A, Single N-Channel, SO-8 Flat Lead

Features

•Low R

•Optimized Gate Charge

•Low Inductance SO-8 Package

•These are Pb-Free Devices

Applications

•Notebooks, Graphics Cards

•DC-DC Converters

•Synchronous Rectification

MAXIMUM RATINGS (T

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current

Power Dissipation (Note 1)

Continuous Drain Current

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain-to-Source Avalanche Energy

Lead Temperature for Soldering Purposes

THERMAL RESISTANCE MAXIMUM RATINGS

Junction-to-Case - Steady State

Junction-to-Ambient - Steady State (Note 1)

Junction-to-Ambient - t v10 s (Note 1)

Junction-to-Ambient - Steady State (Note 2)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

2. Surface mounted on FR4 board using the minimum recommended pad size

DS(on)

= 25°C unless otherwise noted)

Parameter Symbol Value Unit

(Note 1 )

(Note 2)

(VDD = 30 V, VGS = 10 V, IPK = 29 A, L = 1 mH, RG = 25 W)

(1/8″ from case for 10 s)

Parameter Symbol Value Unit

(Cu area = 1.127 in sq [1 oz] including traces).

(Cu area = 1.0 in sq).

Steady

State

t v10 s TA = 25°C 29

Steady

State

t v10 s 6.6

Steady

State

TA = 25°C

TA = 85°C 12

TA = 25°C

TA = 85°C 8.0

TA = 25°C

tp = 10 ms

DSS

stg

30 V

20 V

2.2 W

0.9 W

88 A

-55 to 150

6.5 A

430 mJ

260 °C

2.2 °C/W

56.2

141.1

°C

°C/W

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(BR)DSS

30 V

4.0 mW @ 10 V

5.5 mW @ 4.5 V

DS(on)

Typ

ID Max

(Note 1)

29 A

MARKING DIAGRAM

4121N

SO-8 FLAT LEAD

CASE 488AA

STYLE 1

4121N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

(Note: Microdot may be in either location)

S S G

AYWWG

ORDERING INFORMATION

Device Package Shipping

NTMFS4121NT1G SO-8 FL

(Pb-Free)

NTMFS4121NT3G SO-8 FL

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1500 Tape & Reel

5000 Tape & Reel

†

© Semiconductor Components Industries, LLC, 2007

July, 2007 - Rev. 3

1 Publication Order Number:

NTMFS4121N/D

Page 2

NTMFS4121N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V, VDS = 24 V

VDS = 0 V, VGS = 20 V 100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V

Negative Threshold Temperature Coefficient V

Drain-to-Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 24 A

VGS = 4.5 V, ID = 21 A

Forward Transconductance g

VDS = 15 V, ID = 24 A 20 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Gate Resistance R

ISS

OSS

RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz, V

VGS = 4.5 V, VDS = 15 V, ID = 21 A

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = 4.5 V, VDS = 15 V,

ID = 1.0 A, RL = 15 W, RG = 3.0 W

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V, IS = 6.0 A

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 6.0 A

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

TJ = 25°C

TJ = 125°C

= 24 V

TJ = 25°C

TJ = 125°C

30 V

21 mV/°C

1.0 mA

1.0 2.5 V

7.4 mV/°C

4.2 5.25 mW

5.5 7.0

2700

480

290

24 40

3.0

7.3

10.2

1.5

0.8 1.0

0.6

25.4 nC

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NTMFS4121N

TYPICAL PERFORMANCE CURVES

70 70

DRAIN CURRENT (AMPS)

VGS = 4 V to 10 V

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

3.5 V

TJ = 25°C

3.0 V

2.8 V

2.6 V

2.4 V

Figure 1. On-Region Characteristics

0.009

0.008

0.007

0.006

0.005

0.004

0.003

0.002

DRAIN-TO-SOURCE RESISTANCE (W)

0.001

DS(on),

VGS = 10 V

20 80

10 40 50

ID, DRAIN CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

TJ = -55°C

7060 7060

0.009

0.008

0.007

0.006

0.005

0.004

DRAIN-TO-SOURCE RESISTANCE (W)

0.003

DS(on),

Figure 3. On-Resistance vs. Drain Current and

Temperature

VDS ≥ 10 V

TJ = 25°C

TJ = 125°C

TJ = -55°C

DRAIN CURRENT (AMPS)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

20 8010 40 5030

ID, DRAIN CURRENT (AMPS)

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

1.6 ID = 24 A VGS = 10 V

1.4

1.2

DRAIN-TO-SOURCE

0.8

DS(on),

RESISTANCE (NORMALIZED)

0.6

-50 0-25 25

Figure 5. On-Resistance Variation with

50 150

TJ, JUNCTION TEMPERATURE (°C)

Temperature

100000

10000

1000

, LEAKAGE (nA)

DSS

125100

100

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VGS = 0 V

TJ = 150°C

TJ = 125°C

10 25

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain-to-Source Leakage Current

vs. Voltage

Page 4

NTMFS4121N

TYPICAL PERFORMANCE CURVES

4000

3500

3000

iss

TJ = 25°C

2500

2000

1500

C, CAPACITANCE (pF)

1000

oss

500

0510

rss

15 20

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate-To-Source and

1000

VDD = 15 V ID = 1 A VGS = 4.5 V

, GATE-TO-SOURCE VOLTAGE (VOLTS)

51015

QG, TOTAL GATE CHARGE (nC)

Drain-To-Source Voltage vs. Total Charge

VGS = 0 V

TJ = 25°C

VDD = 15 V VGS = 4.5 V ID = 21 A TJ = 25°C

2520

100

t, TIME (ns)

d(off)

d(on)

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

1000

100

VGS = 20 V

SINGLE PULSE TC = 25°C

, DRAIN CURRENT (AMPS)

0.1

0.01

0.1

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1 ms

10 ms

100

, SOURCE CURRENT (AMPS)

0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

450

400

350

300

250

200

150

100

AVALANCHE ENERGY (mJ)

EAS, SINGLE PULSE DRAIN-TO-SOURCE

TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs

Starting Junction Temperature

0.80.6

1.0

1.2

ID = 29 A

7550

100 125

150

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Page 5

D = 0.5

0.2

0.1

0.05

0.02

0.01

THERMAL RESISTANCE

Rthja(t), EFFECTIVE TRANSIENT

0.001

SINGLE PULSE

1E-03 1E-02 1E-01

NTMFS4121N

1E+00 1E+01 1E+02

t, TIME (seconds)

Figure 13. Thermal Response

1E+03

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Page 6

NTMFS4121N

PACKAGE DIMENSIONS

DFN6 5x6, 1.27P (SO8 FL)

CASE 488AA-01

ISSUE C

0.10 C

0.05 c

1234

TOP VIEW

SIDE VIEW

A0.10 BC

BOTTOM VIEW

2 X

e/2

0.20 C

DETAIL A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE

2 X

0.20 C

4 X

3 X

SEATING

PLANE

DETAIL A

BURRS.

DIM MIN NOM

A1 0.00 ---

D1 4.50 4.90 D2 3.50 ---

E1 5.50 5.80 E2 3.45 ---

L1 0.05 0.17

MILLIMETERS

A 0.90 1.00

b 0.33 0.41

c 0.23 0.28

D 5.15 BSC

E 6.15 BSC

e 1.27 BSC G 0.51 0.61 K 0.51 --- L 0.51 0.61

M 3.00 3.40

q 0 ---

MAX

1.10

0.05

0.51

0.33

5.10

4.22

6.10

4.30

0.71

---

0.71

0.20

3.80 12

SOLDERING FOOTPRINT*

3X 4X

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

1.330

3.200

0.965

0.495

1.270

4.560

1.530

0.750

0.905

0.475

1.000

4.530

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTMFS4121N/D