Page 1
NTMD6N04R2
Power MOSFET
40 V, 5.8 A, Dual N-Channel SOIC-8
Features
•Designed for use in low voltage, high speed switching applications
•Ultra Low On-Resistance Provides
Higher Efficiency and Extends Battery Life
- R
- R
•Miniature SOIC-8 Surface Mount Package Saves Board Space
•Diode is Characterized for Use in Bridge Circuits
•Diode Exhibits High Speed, with Soft Recovery
•Pb-Free Package is Available
Applications
•DC-DC Converters
•Computers
•Printers
•Cellular and Cordless Phones
•Disk Drives and Tape Drives
MAXIMUM RATINGS (T
Drain-to-Source Voltage V
Gate-to-Source Voltage - Continuous V
Drain Current (Note 1)
- Continuous @ TA = 25°C
- Single Pulse (tp ≤ 10 ms)
Drain Current (Note 2)
- Continuous @ TA = 25°C
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Operating and Storage Temperature
Range
Single Pulse Drain-to-Source Avalanche
Energy - Starting TJ = 25°C
(VDD = 40 Vdc, VGS = 5.0 Vdc,
Vdc, Peak IL = 7.0 Apk,
L = 10 mH, RG = 25 W)
Thermal Resistance
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
Maximum Lead Temperature for
Soldering Purposes for 10 Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s
2. When surface mounted to an FR4 board using 1″ pad size, t = steady state
= 0.027 W, VGS = 10 V (Typ)
DS(on)
= 0.034 W, VGS = 4.5 V (Typ)
DS(on)
= 25°C unless otherwise noted)
J
Rating Symbol Value Unit
DSS
GS
I
D
I
DM
I
D
P
D
TJ, T
E
R
stg
AS
q
JA
T
L
-55 to +150 °C
40 V
"20 V
5.8
29
4.6 Adc
2.0
1.29
245 mJ
62.5
97
260 °C
Adc
Apk
°C/W
W
http://onsemi.com
G
V
DSS
40 V
R
Typ ID Max
DS(ON)
27 mW @ VGS = 10 V
N-Channel
D
G
S
5.8 A
D
S
MARKING DIAGRAM &
PIN ASSIGNMENT
8
1
SOIC-8
CASE 751
STYLE 11
E6N04 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
D1 D1 D2 D2
8
E6N04
AYWWG
G
1
S1 G1 S2 G2
ORDERING INFORMATION
Device Package Shipping
NTMD6N04R2G SOIC-8
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2500/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1 Publication Order Number:
NTMD6N04R2/D
Page 2
NTMD6N04R2
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mA)
Temperature Coefficient (Positive)
V
Zero Gate Voltage Drain Current
= 40 Vdc, VGS = 0 Vdc, TJ = 25°C)
(V
DS
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate-Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
V
Static Drain-to-Source On-State Resistance
(VGS = 10 Vdc, ID = 5.8 Adc)
(VGS = 4.5 Vdc, ID = 3.9 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 5.8 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 32 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Reverse Transfer Capacitance C
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn-On Delay Time
Rise Time t
Turn-Off Delay Time t
(VDD = 20 Vdc, ID = 5.8 A,
VGS = 10 V,
RG = 6 W)
Fall Time t
Turn-On Delay Time
Rise Time t
Turn-Off Delay Time t
(VDD = 20 Vdc, ID = 5.8 A,
VGS = 4.5 V,
RG = 6 W)
Fall Time t
Gate Charge
(VDS = 20 Vdc,
VGS = 10 Vdc,
ID = 5.8 A)
BODY-DRAIN DIODE RATINGS (Note 3)
Diode Forward On-Voltage (IS = 1.7 Adc, VGS = 0 V)
(IS = 1.7 Adc, VGS = 0 V, TJ = 150°C)
Reverse Recovery Time
(IS = 1.7 A, VGS = 0 V,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
(IS = 1.7 A, dIS/dt = 100 A/ms, VGS = 0 V)
Symbol Min Typ Max Unit
Vdc
V
(BR)DSS
(BR)DSS/TJ
I
DSS
I
GSS
40
-
-
-
47
45
-
-
-
-
1.0
10
- - "100
mV/°C
mAdc
nAdc
Vdc
V
GS(th)
GS(th)/TJ
R
DS(on)
g
FS
C
iss
C
oss
rss
t
d(on)
r
d(off)
f
t
d(on)
r
d(off)
f
Q
T
Q
gs
Q
gd
V
SD
t
rr
t
a
t
b
Q
RR
1.0
-
-
-
1.9
4.7
0.027
0.034
3.0
-
0.034
0.043
mV/°C
Mhos
- 8.12 -
- 723 900
- 156 225
- 53 75
- 10 18
- 20 35
- 45 70
- 40 65
- 15 -
- 55 -
- 30 -
- 35 -
- 20 30
- 2.5 -
- 5.5 -
-
-
0.76
0.56
1.1
-
- 23 -
- 16 -
- 7 -
- 20 - nC
W
pF
ns
ns
nC
Vdc
ns
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
Page 3
NTMD6N04R2
14
12
10
8
6
4
, DRAIN CURRENT (A)
D
I
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
6 V - 10 V
4.0 V
3.8 V
3.6 V
2.4 V
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
0.2
0.15
0.1
TJ = 25°C
3.4 V
3.2 V
3.0 V
2.8 V
VGS = 2.6 V
20
VDS w 10 V
18
16
14
12
10
8
6
, DRAIN CURRENT (A)
D
4
I
2
0
1.5 2 2.5 3 3.5 4
VGS, GATE-TO-SOURCE VOLTAGE (V)
TJ = 25°C
TJ = 100°C
TJ = -55°C
Figure 2. Transfer Characteristics
VGS = 10 V
TJ = 25°C
0.05
0
, DRAIN-TO-SOURCE RESISTANCE (W)
2345678910
DS(on)
R
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 3. On-Resistance vs. Gate-to-Source
1.8
ID = 5.8 A
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
(NORMALIZED)
0.8
0.7
, DRAIN-TO-SOURCE RESISTANCE
0.6
DS(on)
R
V
= 10 V
GS
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. On Resistance Variation with
Temperature
Voltage
10000
, LEAKAGE (nA)
DSS
I
VGS = 0 V
TJ = 150°C
1000
100
TJ = 100°C
10
1
0 3 6 9 1215182124273033363942
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. Drain-to-Source Leakage Current
vs. Voltage
http://onsemi.com
3
Page 4
NTMD6N04R2
2400
VDS = 0 V
VGS = 0 V
1800
1200
600
C, CAPACITANCE (pF)
C
iss
C
rss
C
iss
C
oss
C
0
-10 -5 0 5 10 15 20
V
GS
V
DS
rss
GATE-TO-SOURCE OR DRAIN-TO-SOURCE
VOLTAGE (V)
Figure 6. Capacitance Variation
4
VGS = 0 V
3.5
TJ = 25°C
3
2.5
2
1.5
, SOURCE CURRENT (A)
1
S
I
0.5
0
0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage vs. Current
TJ = 25°C
10
Q
T
8
V
DS
V
GS
6
Q
1
Q
2
2
, GATE-TO-SOURCE VOLTAGE (V)
GS
V
0
ID = 5.8 A
TJ = 25°C
0 3 6 9 12 15 18 21
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
100
VGS = 20 V
Single Pulse T
TA = 25°C
10
C
1
R
DS(on)
THERMAL LIMIT
0.1
, DRAIN CURRENT (A)
D
I
PACKAGE LIMIT
Mounted on FR4 board using 1 in pad size,
0.01
with die operating 10s max.
0.1 1 10 100
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
25
20
15
10
5
0
10 ms
100 ms
1 ms
10 ms
dc
DRAIN-TO-SOURCE VOLTAGE (V)
DS,
V
http://onsemi.com
4
Page 5
-Y-
l
-Z-
NTMD6N04R2
PACKAGE DIMENSIONS
SOIC-8 NB
CASE 751-07
ISSUE AJ
NOTES:
-XA
58
B
1
S
0.25 (0.010)
4
M
M
Y
K
G
C
SEATING
PLANE
0.10 (0.004)
H
D
0.25 (0.010) Z
M
Y
SXS
N
X 45
_
M
SOLDERING FOOTPRINT*
J
1.52
0.060
7.0
0.275
4.0
0.155
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751-01 THRU 751-06 ARE OBSOLETE. NEW
STANDARD IS 751-07.
MILLIMETERS
DIMAMIN MAX MIN MAX
4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8
____
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
INCHES
0.6
0.024
1.270
0.050
SCALE 6:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81-3-5773-3850
http://onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loca
Sales Representative
NTMD6N04R2/D
5
Loading...