Datasheet ntmd6n02r2-d Datasheet

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Page 1

NTMD6N02R2

)

Power MOSFET

6.0 Amps, 20 Volts

N−Channel Enhancement Mode Dual SO−8 Package

Features

• Ultra Low R

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Miniature Dual SOIC−8 Surface Mount Package

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• SOIC−8 Mounting Information Provided

• Pb−Free Package is Available

Applications

• DC−DC Converters

• Low Voltage Motor Control

• Power Management in Portable and Battery−Powered Products,

for example, Computers, Printers, Cellular and Cordless Telephones and PCMCIA Cards

DS(on)

DSS

20 V

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DS(ON)

35 mW @ VGS = 4.5 V

N−Channel

TYP ID MAX

6.0 A

SOIC−8 CASE 751 STYLE 11

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain−to−Source Voltage V Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous V Thermal Resistance,

Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4)

Thermal Resistance,

Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4)

Thermal Resistance

Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4)

1. Mounted onto a 2 in square FR−4 Board (1 in sq. 2 oz. Cu 0.06 in thick single sided), t < 10 seconds.

2. Mounted onto a 2 in square FR−4 Board (1 in sq. 2 oz. Cu 0.06 in thick single sided), t = steady state.

3. Minimum FR−4 or G−10 PCB, t = steady state.

4. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.

= 25°C unless otherwise noted)

DSS

DGR

20 V 20 V

"12 V

62.5

2.0

6.5

5.5 50

102

1.22

5.07

4.07 40

172

0.73

3.92

3.14 30

°C/W

MARKING DIAGRAM

& PIN ASSIGNMENT

Source 1

Gate 1

A A A

Source 2

Gate 2

1 2

3 4

(Top View)

E6N02 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location

ALYWG

E6N02

8 7

6 5

Drain 1 Drain 1 Drain 2 Drain 2

ORDERING INFORMATION

A A A

Device Package Shipping

NTMD6N02R2 SOIC−8 2500/Tape & Reel NTMD6N02R2G SOIC−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

2500/Tape & Reel

†

August, 2005 − Rev. 3

1 Publication Order Number:

NTMD6N02R2/D

Page 2

NTMD6N02R2

MAXIMUM RATINGS (T

= 25°C unless otherwise noted) (continued)

Rating Symbol Value Unit

Operating and Storage Temperature Range TJ, T Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 6.0 Apk, L = 20 mH, RG = 25 W)

Maximum Lead Temperature for Soldering Purposes for 10 sec onds T

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Note 5)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive) Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25°C)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate−Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc) I Gate−Body Leakage Current (VGS = −12 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = −250 mAdc) Temperature Coefficient (Negative)

Static Drain−to−Source On−State Resistance

(VGS = 4.5 Vdc, ID = 6.0 Adc)

(VGS = 4.5 Vdc, ID = 4.0 Adc)

(VGS = 2.7 Vdc, ID = 2.0 Adc)

(VGS = 2.5 Vdc, ID = 3.0 Adc) Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Notes 6 and 7)

Turn−On Delay Time Rise Time t Turn−Off Delay Time t

(VDD = 16 Vdc, ID = 6.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 W)

Fall Time t Turn−On Delay Time Rise Time t Turn−Off Delay Time t

(VDD = 16 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 W)

Fall Time t Total Gate Charge Gate−Source Charge Q Gate−Drain Charge Q

(VDS = 16 Vdc,

VGS = 4.5 Vdc,

ID = 6.0 Adc)

5. Handling precautions to protect against electrostatic discharge is mandatory

6. Indicates Pulse Test: Pulse Width =300 ms max, Duty Cycle = 2%.

7. Switching characteristics are independent of operating junction temperature.

(BR)DSS

DSS

GSS GSS

GS(th)

DS(on)

C C C

d(on)

d(off)

d(on)

d(off)

iss oss rss

f tot gs gd

stg

− 55 to +150 °C 360 mJ

260 °C

Vdc

−

19.2

−

mV/°C

mAdc

−

1.0 10

− − 100 nAdc

− − −100 nAdc

Vdc

0.6

−

0.9

−3.0

1.2

−

mV/°C

−

0.028

0.033

0.035

0.043

0.048

0.049

− 10 − Mhos

− 785 1100 pF

− 260 450

− 75 180

− 12 20

− 50 90

− 45 75

− 80 130

− 11 18

− 35 65

− 45 75

− 60 110

− 12 20

− 1.5 −

− 4.0 −

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NTMD6N02R2

, DRAIN CURRENT (AMPS)

, DRAIN−TO−SOURCE RESISTANCE (OHMS)

ELECTRICAL CHARACTERISTICS (T

Characteristic

BODY−DRAIN DIODE RATINGS (Note 9)

Diode Forward On−Voltage (IS = 4.0 Adc, VGS = 0 Vdc)

Reverse Recovery Time

Reverse Recovery Stored Charge Q

8. Handling precautions to protect against electrostatic discharge is mandatory.

9. Indicates Pulse Test: Pulse Width =300 ms max, Duty Cycle = 2%.

10 V

2.5 V

4.5 V

3.2 V

= 25°C unless otherwise noted) (continued) (Note 8)

(IS = 6.0 Adc, VGS = 0 Vdc)

(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)

(IS = 6.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

2.0 V

TJ = 25°C

1.8 V

Symbol Min Typ Max Unit

VDS ≥ 10 V

−

− 30 −

− 15 −

− 0.02 −

100°C

0.83

0.88

0.75

1.1

1.2

25°C

Vdc

−

0.07

0.06

0.05

0.04

0.03

0.02

0.01

DS(on)

VGS = 1.5 V

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

ID = 6.0 A TJ = 25°C

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance versus

Gate−To−Source Voltage

, DRAIN CURRENT (AMPS)

1.751.51.2510.750.50.250

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = −55°C

21.510.5

Figure 2. Transfer Characteristics

0.05 TJ = 25°C

0.04

0.03

0.02

, DRAIN−TO−SOURCE RESISTANCE (OHMS)

0.010

1086420

DS(on)

ID, DRAIN CURRENT (AMPS)

VGS = 2.5 V

4.5 V

7531

1191

Figure 4. On-Resistance versus Drain Current

and Gate Voltage

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Page 4

NTMD6N02R2

1.6

, DRAIN−TO−SOURCE RESISTANCE

)

C, CAPACITANCE (pF)

2500

1.4

1.2

(NORMALIZED)

0.8

0.6

DS(on)

2000

1500

iss

rss

1000

500

10 0 5 105

ID = 6.0 A V

= 4.5 V

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

VDS = 0 V VGS = 0 V

rss

TJ = 25°C

oss

15 20

1000

100

VGS = 0 V

TJ = 125°C

100°C

, LEAKAGE (nA)

DSS

25°C

0.1

1501251007550250−25−50

0.01

161284

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage Current

versus Voltage

416

iss

, GATE−TO−SOURCE VOLTAGE (VOLT

ID = 6 A

VDS = 16 V VGS = 4.5 V

TJ = 25°C

48 16

Qg, TOTAL GATE CHARGE (nC)

, DRAIN−TO−SOURCE VOLTAGE (VOLTS

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDS = 16 V ID = 6.0 A VGS = 4.5 V

100

d(off)

d(on)

t, TIME (ns)

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

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Figure 8. Gate−To−Source and Drain−To−Source

Voltage versus Total Charge

Page 5

NTMD6N02R2

100

DRAIN−TO−SOURCE DIODE CHARACTERISTICS

VGS = 0 V TJ = 25°C

, SOURCE CURRENT (AMPS)

0 0.2 0.4 0.6

0.8 1.0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

1.2

di/dt

VGS = 20 V SINGLE PULSE TC = 25°C

100 ms

1 ms

10 ms

, DRAIN CURRENT (AMPS)

0.1

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

TIME

0.25 I

Figure 12. Diode Reverse Recovery Waveform

TYPICAL ELECTRICAL CHARACTERISTICS

D = 0.5

0.2

0.1

0.05

0.02

0.01

THERMAL RESISTANCE

Rthja(t), EFFECTIVE TRANSIENT

0.001

SINGLE PULSE

1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 t, TIME (s)

Figure 13. Thermal Response

(pk)

DUTY CYCLE, D = t1/t

(t) = r(t) R

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN

READ TIME AT t T

− TC = P

J(pk)

(pk)

1.0E+02 1.0E+03

(t)

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Page 6

−Y−

−Z−

NTMD6N02R2

PACKAGE DIMENSIONS

SOIC−8

CASE 751−07

ISSUE AG

NOTES:

−X− A

0.25 (0.010)

SEATING PLANE

0.10 (0.004)

0.25 (0.010) Z

SXS

X 45

SOLDERING FOOTPRINT*

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8

____

N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244

STYLE 11:

PIN 1. SOURCE 1

2. GATE 1

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. DRAIN 2

7. DRAIN 1

8. DRAIN 1

INCHES

1.52

0.060

7.0

0.275

0.6

0.024

4.0

0.155

1.270

0.050

SCALE 6:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTMD6N02R2/D