Datasheet ntmd6601n Datasheet

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Page 1

NTMD6601NR2G

Power MOSFET

80 V, 2.2 A, Dual N-Channel, SO-8

Features

•Low R

•Low Capacitance to Minimize Driver Losses

•Optimized Gate Charge to Minimize Switching Losses

•Dual SO-8 Surface Mount Package Saves Board Space

•This is a Pb-Free Device

Applications

•LCD Displays

MAXIMUM RATINGS (T

Drain-to-Source Voltage V

Gate-to-Source Voltage - Continuous V

Continuous Drain Current R

Power Dissipation

(Note 1)

Continuous Drain Current R

Power Dissipation

(Note 2)

Continuous Drain Current R (Note 1)

Pulsed Drain Current T

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain-to-Source Avalanche Energy T

= 7.0 Apk, L = 1.0 mH, RG = 25 W

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

to Minimize Conduction Losses

DS(on)

= 25°C unless otherwise stated)

Rating Symbol Value Unit

= 25°C,

= 10 ms

= 25°C P

(Note 1)

(Note 2)

t < 5 s

= 25C, VDD = 50 V, VGS = 10 V,

Steady

State

DSS

= 25°C

= 70°C 1.2

= 25°C

= 70°C 0.9

= 25°C

= 70°C 1.7

-55 to

STG

+150

EAS 2 5 mJ

80 V

±15 V

1.4

1.0 W

1.1

0.6 W

2.2

9.0 A

°C

1.3 A

260 °C

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(BR)DSS

80 V

215 mW @ 10 V

DS(on)

Max

2.2 A

Max

245 mW @ 4.5 V

N-Channel

MARKING DIAGRAM

& PIN ASSIGNMENT

SO-8

CASE 751

STYLE 11

6601N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

D1 D1 D2 D2

6601N

AYWW

S1 G1 S2 G2

THERMAL RESISTANCE RATINGS

Rating Symbol Max Unit

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t≤ 5 s (Note 1)

Junction-to-FOOT (Drain)

Junction-to-Ambient – Steady State (Note 2)

1. Surface-mounted on 2 inch sq FR4 board using 1 inch sq pad size, 1 oz Cu.

2. Surface-mounted on FR4 board using the minimum recommended pad size.

© Semiconductor Components Industries, LLC, 2008

February, 2008 - Rev. 0

120

°C/W

200

1 Publication Order Number:

ORDERING INFORMATION

Device Package Shipping

NTMD6601NR2G SO-8

2500/Tape & Reel

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

NTMD6601N/D

†

Page 2

NTMD6601NR2G

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

= 0 V, I

= 0 V,

= 80 V

= 0 V, V

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient

Drain-to-Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

= VDS, I

= 10 V I

= 5.0 V I

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Total Gate Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

G(TOT)

= 0 V, f = 1.0 MHz, V

= 5.0 V, V

= 10 V, V

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

Fall Time t

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(ON)

d(OFF)

d(ON)

d(OFF)

= 4.5 V, V

= 1.0 A, R

= 10 V, V

= 2.5 A, R

BODY - DRAIN DIODE RATINGS (Note 3)

Forward Diode Voltage

Reverse Recovery Time t

Charge Time T

Discharge Time T

Reverse Recovery Time Q

VGS = 0 V I

= 1.0 A

VGS = 0 V, dIS/dt = 100 A/ms,

= 1.0 A

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

= 250 mA

80 V

99.8

TJ = 25°C

TJ = 125°C

= ±15 V ±100 nA

= 250 mA

1.0 1.9 3.0 V

1.0

4.6

= 2.2 A

= 1.0 A

190 215

215 245

220 400

= 25 V

55 100

16 30

5.0 9.0

= 40 V, I

= 1.0 A

0.4

1.0

2.75

= 40 V, I

= 1.0 A 9.0 15 nC

21 35

= 27 W

= 40 V,

62 105

52 85

50 85

= 40 V,

= 47 W

105

TJ = 25°C

TJ = 150°C

0.8 1.0

0.6

43 86

mV/°C

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Page 3

NTMD6601NR2G

TYPICAL ELECTRICAL CHARACTERISTICS

, DRAIN CURRENT (A)

9 V

8 V

7 V

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

0.5

VGS = 5.0 V

0.4

0.3

0.2

0.1

, DRAIN-TO-SOURCE RESISTANCE (W)

DS(on)

10 V

TJ = 100°C

TJ = 25°C

TJ = -55°C

234 5

, DRAIN CURRENT (A)

4 V

5 V

6 V

VGS = 3.5 V

TJ = 25°C

1.6 1.8 21 1.2 1.40.6 0.80.40.20

VDS ≥ 10 V

, DRAIN CURRENT (A)

TJ = 100°C

VGS, GATE-TO-SOURCE VOLTAGE (V)

TJ = 25°C

TJ = -55°C

563421

Figure 2. Transfer Characteristics

0.3 TJ = 25°C

0.25

0.2

0.15

0.1

0.05

, DRAIN-TO-SOURCE RESISTANCE (W)

02345

DS(on)

ID, DRAIN CURRENT (A)

VGS = 5.0 V

VGS = 10 V

2.5

1.5

(NORMALIZED)

0.5

, DRAIN-TO-SOURCE RESISTANCE

DS(on)

Figure 3. On-Resistance versus

Drain Current and Temperature

VGS = 5.0 V I

= 1.0 A

-25 0 25 50 75

TJ, JUNCTION TEMPERATURE (°C)

100-50

Figure 5. On-Resistance Variation with

Temperature

100,000

10,000

1000

100

, LEAKAGE (nA)

DSS

125 150

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Figure 4. On-Resistance versus Drain Current

and Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 100°C

20 30 40 50 60

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 6. Drain-To-Source Leakage

Current versus Voltage

8010

Page 4

NTMD6601NR2G

TYPICAL ELECTRICAL CHARACTERISTICS

600

500

VGS = 0 VV

= 0 V

iss

TJ = 25°C

400

rss

300

200

C, CAPACITANCE (pF)

100

rss

oss

-5 0 5 10 15 20 V

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

VDD = 64 V I

= 2.2 A

= 5.0 V

100

t, TIME (ns)

td(off)

d(on)

iss

ID = 1.0 A

, GATE-TO-SOURCE VOLTAGE (V)

25-10

0123 456 789

= 25°C

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate-To-Source and Drain-To-Source

Voltage versus Total Charge

2.5

VGS = 0 V T

= 25°C

1.5

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

VGS = 15 V SINGLE PULSE

= 25°C

1 ms

10 ms

, DRAIN CURRENT (A)

DS(on)

LIMIT

THERMAL LIMIT

0.1

PACKAGE LIMIT

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

100 ms

, SOURCE CURRENT (A)

0.5

Figure 10. Diode Forward Voltage versus Current

AVALANCHE ENERGY (mJ)

, SINGLE PULSE DRAIN-TO-SOURCE

1001010.1 E

Figure 12. Maximum Avalanche Energy versus

0.2 1

0.4 0.6 0.8

VSD, SOURCE-TO-DRAIN VOLTAGE (V)

ID = 7.0 A

100 125

150

TJ, STARTING JUNCTION TEMPERATURE (°C)

Starting Junction Temperature

175755025

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Page 5

NTMD6601NR2G

TYPICAL ELECTRICAL CHARACTERISTICS

D = 0.5

0.2

0.1

THERMAL RESISTANCE

0.01

Rthja(t), EFFECTIVE TRANSIENT

0.1

0.05

0.02

0.01

Normalized to qja at 10s.

0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W

Chip

SINGLE PULSE

0.001

1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 t, TIME (s)

Figure 13. Thermal Response

di/dt

0.25 I

TIME

107.55 F1.7891 F0.3074 F0.0854 F0.0154 F

Ambient

1.0E+02 1.0E+03

Figure 14. Diode Reverse Recovery Waveform

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Page 6

-Y-

-Z-

NTMD6601NR2G

PACKAGE DIMENSIONS

SO-8 NB

CASE 751-07

ISSUE AJ

-X-

0.25 (0.010) Z

0.25 (0.010)

SEATING PLANE

SXS

0.10 (0.004)

X 45

SOLDERING FOOTPRINT*

1.52

0.060

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.

6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8

____

N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244

STYLE 11:

PIN 1. SOURCE 1

2. GATE 1

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. DRAIN 2

7. DRAIN 1

8. DRAIN 1

INCHES

7.0

0.275

0.6

0.024

4.0

0.155

1.270

0.050

SCALE 6:1

inches

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTMD6601N/D