Datasheet ntmd4884nf Datasheet

NTMD4884NF

Power MOSFET and Schottky Diode

30 V, 5.7 A, Single N-Channel with 30 V,

2.8 A, Schottky Barrier Diode

Features

•FETKYt Surface Mount Package Saves Board Space

•Independent Pin-Out for MOSFET and Schottky Allowing for

Design Flexibility

•Low R

Conduction Losses

•Optimized Gate Charge to Minimize Switching Losses

•This is a Pb-Free Device

Applications

•Disk Drives

•DC-DC Converters

•Printers

MOSFET and Low VF Schottky to Minimize

DS(on)

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N-CHANNEL MOSFET

V

(BR)DSS

30 V

R

DS(on)

48 mW @ 10 V

70 mW @ 4.5 V

SCHOTTKY DIODE

VR Max IF MaxVF Max

30 V

0.5 V

Max

ID Max

5.7 A

2.8 A

MOSFET MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current R

Power Dissipation R

q

JA

Continuous Drain Current R

Power Dissipation R

q

JA

Continuous Drain Current R (Note 1)

Power Dissipation R

q

JA

Pulsed Drain Current T

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

(Note 1)

q

JA

(Note 1)

(Note 2)

q

JA

(Note 2)

t < 10 s

q

JA

t < 10 s (Note 1)

Steady

State

SCHOTTKY MAXIMUM RATINGS (T

Peak Repetitive Reverse Voltage V

DC Blocking Voltage V

Average Rectified Forward Current, (Note 1)

= 25°C unless otherwise stated)

J

T

= 25°C

A

T

= 70°C 3.8

A

T

= 25°C P

A

T

= 25°C

A

T

= 70°C 2.6

A

T

= 25°C P

A

T

= 25°C

A

T

= 70°C 4.5

A

T

= 25°C P

A

= 25°C,

A

t

= 10 ms

p

= 25°C unless otherwise stated)

J

Steady

State

t < 10 s 4.1

DSS

GS

I

D

I

D

I

D

I

DM

S

T

RRM

I

F

D

STG

L

R

30 V

±20 V

4.7

1.6 W

3.3

0.77 W

5.7

2.3 W

19 A

-55 to +150

1.3 A

260 °C

30 V

2.8

°C

S

A

G

D

N-Channel MOSFET

A

C

Schottky Diode

MARKING DIAGRAM

& PIN ASSIGNMENT

A

8

1

SOIC-8 CASE 751 STYLE 18

4884NF = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

C CDD

8

4884NF

AYWW

G

1

AASG

ORDERING INFORMATION

Device Package Shipping

A

NTMD4884NFR2G SOIC-8

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

2500/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2008

March, 2008 - Rev. 0

1 Publication Order Number:

NTMD4884NF/D

NTMD4884NF

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter MOSFET & Schottky Symbol Max Unit

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t ≤10 s Steady State (Note 1)

Junction-to-FOOT (Drain) Equivalent to R

Junction-to-Ambient – Steady State (Note 2)

1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.

2. Surface-mounted on FR4 board using the minimum recommended pad size.

q

JC

R

q

JA

R

q

JA

R

q

JF

R

q

JA

79

54

50

163

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage V

Drain-to-Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V

Negative Threshold Temperature Coefficient V

Drain-to-Source On Resistance R

Forward Transconductance g

Gate Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

FS

G

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Total Gate Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(ON)

r

d(OFF)

f

DRAIN-TO-SOURCE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Time Q

SD

RR

a

b

RR

V

GS

V

= 0 V,

GS

V

= 24 V

DS

V

= 0 V, V

DS

V

= VDS, I

GS

V

= 10 V I

GS

V

= 4.5 V I

GS

V

= 5.0 V, I

DS

V

= 0 V, f = 1.0 MHz,

GS

V

= 4.5 V, V

GS

V

= 10 V, V

GS

V

= 10 V, V

GS

I

= 1.0 A, R

D

VGS = 0 V

ID = 1.3 A

= 0 V, I

V

DS

I

= 4.0 A

D

I

= 4.0 A

D

= 250 mA

D

TJ = 25°C

TJ = 125°C

= ±20 V ±100 nA

GS

= 250 mA

D

= 4.0 A

D

= 3.5 A

D

= 4.0 A 10 S

D

= 15 V

= 15 V,

DS

= 15 V,

DS

= 15 V,

DS

= 6.0 W

G

TJ = 25°C

TJ = 125°C

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 4.0 A

30 V

24

mV/°C

1.0

20

1.0 2.5 V

5.0 mV/°C

34 48

50 70

mW

2.4 3.6

280 360

60 80

32 42

2.8 4.2

0.4

1.2

1.0

5.6 8.0

6.0 12

6.5 13

14 26

1.4 7.0

0.8 1.0

0.65

9.2 20

6.0

3.2

3.3

mA

W

pF

nC

ns

V

ns

nC

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2

NTMD4884NF

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic UnitMaxTypMinTest ConditionSymbol

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Parameter Symbol Test Conditions Min Ty p Max Unit

Maximum Instantaneous Forward Voltage

Maximum Instantaneous Reverse Current

V

F

I

R

I

F

I

F

V

R

= 0.1 A

= 2.0 A

= 10 V

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

TYPICAL CHARACTERISTICS

15

10 V

5 V

12

4.5 V

9

6

, DRAIN CURRENT (A)

D

I

3

0

VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

4.2 V

VGS = 4.0 V

TJ = 25°C

2.6 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

543210

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

TJ = 25°C 0.26 0.28

TJ = 125°C 0.11 0.13

TJ = 25°C 0.4 0.50

TJ = 125°C 0.35 0.46

TJ = 25°C 0.020 0.25

TJ = 125°C 10 37

VDS ≥ 10 V

TJ = 125°C

TJ = -55°C

V

mA

TJ = 25°C

543210

0.08

0.07

0.06

0.05

0.04

0.03

, DRAIN-TO-SOURCE RESISTANCE (W)

0.02

DS(on)

R

0.06

ID = 4 A TJ = 25°C

TJ = 25°C

VGS = 4.5 V

0.05

0.04

VGS = 10 V

0.03

, DRAIN-TO-SOURCE RESISTANCE (W)

0.02

108642

DS(on)

VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

R

913121110 14

Figure 3. On-Resistance vs. Gate Voltage Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

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3

158765432

NTMD4884NF

TYPICAL CHARACTERISTICS

1.500

1.375

ID = 4 A VGS = 10 V

1.250

1.125

1.000

, DRAIN-TO-SOURCE

DS(on)

0.875

R

RESISTANCE (NORMALIZED)

0.750

Figure 5. On-Resistance Variation with

350

300

250

200

150

100

C, CAPACITANCE (pF)

50

VGS = 0 V

0

DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate-to-Source and

10,000

VGS = 0 V

TJ = 150°C

1000

, LEAKAGE (nA)

100

DSS

I

TJ = 125°C

10

1251007550250-25-50

150

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 6. Drain-to-Source Leakage Current

Temperature

TJ = 25°C

C

iss

C

oss

C

rss

10

8

6

4

2

, GATE-TO-SOURCE VOLTAGE (V)

GS

0

V

2520151050

vs. Voltage

QT

Q2Q1

ID = 4 A

TJ = 25°C

Drain-to-Source Voltage vs. Total Charge

302520151050

V

GS

6543210

100

10

t, TIME (ns)

1

0.1

Figure 9. Resistive Switching Time Variation

VDD = 15 V ID = 1.0 A VGS = 10 V

RG, GATE RESISTANCE (W)

vs. Gate Resistance

3.0

t

d(off)

t

f

t

d(on)

t

r

2.5

2.0

1.5

1.0

, SOURCE CURRENT (A)

S

I

0.5

0

100101

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4

VGS = 0 V TJ = 25°C

1.00.80.60.40.20

VSD, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

1000

R(t) (°C/W)I

0.01

100

10

1

0.1

100

10

1

0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

0.5

0.2

0.1

0.05

0.02

0.01

NTMD4884NF

TYPICAL CHARACTERISTICS

PULSE TIME (sec)

Figure 11. Thermal Response - R

0.10.010.0010.00010.000010.0000010.0000001

at Steady State (min pad)

q

JA

1000100101

0.1

R(t) (°C/W)

Single Pulse

0.01

0.001

100

10

TJ = 125°C

1

0.1

, INSTANTANEOUS FORWARD CURRENT (A)

F

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 13. Typical Forward Voltage Figure 14. Maximum Forward Voltage

Figure 12. Thermal Response - R

TJ = 85°C

TJ = 25°C

TJ = -55°C

PULSE TIME (sec)

at Steady State (1 inch sq pad)

q

JA

100

10

1.31.10.90.70.50.30.1

0.1

, INSTANTANEOUS FORWARD CURRENT (A)

F

I

VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)

TJ = 125°C

1

0.10.010.0010.00010.000010.0000010.0000001

1000100101

TJ = 85°C

TJ = 25°C

1.31.10.90.70.50.30.1

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5

NTMD4884NF

TYPICAL CHARACTERISTICS

100E-3

10E-3

1E-3

100E-6

, REVERSE CURRENT (A)

10E-6

R

I

1E-6

VR, REVERSE VOLTAGE (V)

Figure 15. Typical Reverse Current Figure 16. Maximum Reverse Current

TJ = 125°C

TJ = 85°C

TJ = 25°C

1000

100

100E-3

10E-3

1E-3

100E-6

10E-6

, MAXIMUM REVERSE CURRENT (A)

R

I

1E-6

30100

VR, REVERSE VOLTAGE (V)

TJ = 25°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

2020

30100

C, CAPACITANCE (pF)

10

25 30

VR, REVERSE VOLTAGE (V)

Figure 17. Capacitance

3520151050

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6

-Y-

-Z-

NTMD4884NF

PACKAGE DIMENSIONS

SOIC-8 NB

CASE 751-07

ISSUE AH

-X-

B

H

A

58

1

4

G

D

0.25 (0.010) Z

M

S

Y

0.25 (0.010)

C

SEATING PLANE

SXS

M

0.10 (0.004)

M

Y

K

N

X 45

_

M

J

SOLDERING FOOTPRINT*

1.52

0.060

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.

6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07.

MILLIMETERS

DIMAMIN MAX MIN MAX

4.80 5.00 0.189 0.197

B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010

J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8

____

N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244

STYLE 18:

PIN 1. ANODE

2. ANODE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. CATHODE

8. CATHODE

INCHES

7.0

0.275

0.6

0.024

4.0

0.155

1.270

0.050

SCALE 6:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

FETKY is a registered trademark of International Rectifier Corporation.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTMD4884NF/D

7