Datasheet ntluf4189nz Datasheet

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Page 1

NTLUF4189NZ Power MOSFET and

Schottky Diode

30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm mCoolt Package

Features

• Low Qg and Capacitance to Minimize Switching Losses

• Low Profile UDFN 1.6x1.6 mm for Board Space Saving

• Low VF Schottky Diode

• ESD Protected Gate

• This is a Halide−Free Device

• This is a Pb−Free Device

Applications

• DC-DC Boost Converter

• Color Display and Camera Flash Regulators

• Optimized for Power Management Applications for Portable

Products, such as Cell Phones, PMP, DSC, GPS, and others

MAXIMUM RATINGS (T

Parameter Symbol Value Units

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2) TA = 25°C P

Pulsed Drain Current

MOSFET Operating Junction and Storage Temperature

Schottky Operating Junction & Storage Temperature

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Gate-to-Source ESD Rating (HBM) per JESD22−A114F

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

2. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm

, 2 oz. Cu.

= 25°C unless otherwise stated)

DSS

±8.0 V

-55 to 150

-55 to 125

260 °C

Steady

State

t ≤ 5 s TA = 25°C 1.9

Steady

State

t ≤ 5 s TA = 25°C 1.3

Steady

State

TA = 25°C

TA = 85°C 1.1

TA = 25°C

TA = 85°C 0.9

tp = 10 ms

TJ,

STG

TJ,

STG

ESD 1000 V

30 V

1.5

0.8

1.2

0.5 W

8.0 A

°C

1.5 A

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MOSFET

(BR)DSS

30 V

MAX

DS(on)

200 mW @ 4.5 V

250 mW @ 3.0 V

350 mW @ 2.5 V

ID MAXV

1.5 A

0.5 A

SCHOTTKY DIODE

VR MAX IF MAXVF TYP

30 V

N−Channel MOSFET

0.52 V

Schottky Diode

0.5 A

MARKING DIAGRAM

UDFN6

CASE 517AT

mCOOLt

AA = Specific Device Code M = Date Code G = Pb−Free Package

AA MG

PIN CONNECTIONS

N/C

(Top View)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

March, 2009 − Rev. 1

1 Publication Order Number:

NTLUF4189NZ/D

Page 2

NTLUF4189NZ

DEVICE ORDERING INFORMATION

RRM

θJA

†

0.5 A

155

100

245

30 V

°C/W

Device Package Shipping

NTLUF4189NZTAG UDFN6

3000 / Tape & Reel

(Pb−Free)

NTLUF4189NZTBG UDFN6

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Schottky Diode Maximum Ratings (TJ = 25°C unless otherwise stated)

Parameter

Symbol Value Units

Peak Repetitive Reverse Voltage V

DC Blocking Voltage V

Average Rectified Forward Current I

Thermal Resistance Ratings

Parameter

Symbol Max Units

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient – t ≤ 5 s (Note 3)

Junction-to-Ambient – Steady State min Pad (Note 4)

MOSFET Electrical Characteristics (T

= 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 250 μA

ID = 250 μA, ref to 25°C

VGS = 0 V,

= 24 V

TJ = 25°C 1.0 mA

TJ = 85°C 10

VDS = 0 V, VGS = ± 8.0 V 10

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Negative Threshold Temp. Coefficient V

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 4.5 V, ID = 1.5 A 145 200 mW

VGS = 3.0 V, ID = 0.5 A 185 250

VGS = 2.5 V, ID = 0.5 A 220 350

Forward Transconductance g

VDS = 4.0 V, ID = 0.15 A 1.1 S

CHARGES & CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)

4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz,

= 15 V

VGS = 4.5 V, VDS = 15 V;

= 1.5 A

, 2 oz. Cu.

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

6. Switching characteristics are independent of operating junction temperatures

30 V

22 mV/°C

0.4 1.1 1.5 V

3.0 mV/°C

1.4 3.0

0.2

0.4

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Page 3

NTLUF4189NZ

MOSFET Electrical Characteristics (T

= 25°C unless otherwise specified)

Parameter UnitsMaxTypMinTest ConditionSymbol

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = 4.5 V, VDD = 15 V,

= 1A, RG = 6 W

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V,

= 1A

VGS = 0 V, dISD/dt = 100 A/ms,

TJ = 25°C 0.8 1.2

TJ = 85°C 0.75

= 1 A

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Maximum Instantaneous Forward Voltage

Symbol Test Condition Min Typ Max Units

IF = 10 mA 0.27 0.37

IF = 100 mA 0.36 0.46

IF = 500 mA 0.52 0.62

Maximum Instantaneous Reverse Current

VR = 10 V 2.0 10 mA

VR = 30 V 20 200

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise specified)

Maximum Instantaneous Forward Voltage

IF = 10 mA 0.2

IF = 100 mA 0.3

IF = 500 mA 0.51

Maximum Instantaneous Reverse Current

VR = 10 V 80 mA

VR = 30 V 525

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise specified)

Maximum Instantaneous Forward Voltage

IF = 10 mA 0.14

IF = 100 mA 0.27

IF = 500 mA 0.51

Maximum Instantaneous Reverse Current

VR = 10 V 600 mA

VR = 30 V 3000

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Capacitance

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)

4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm

C VR = 5 V, f = 1.0 MHz 6.0 pF

, 2 oz. Cu.

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

6. Switching characteristics are independent of operating junction temperatures

7.0

4.5

10.2

1.2

10.5

8.9

1.6

2.1 nC

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Page 4

NTLUF4189NZ

TYPICAL MOSFET CHARACTERISTICS

TJ = 25°C

, DRAIN CURRENT (A)

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.35

0.30

0.25 ID = 0.5 A

VGS = 4.5 V

ID = 1.5 A

4.0 V

3.5 V

3.0 V

2.5 V

2.0 V

TJ = 25°C

, DRAIN CURRENT (A)

543210

0.35

0.30

0.25

VDS = 4 V

TJ = 125°C

2.0 V

TJ = 25°C

TJ = −55°C

2.51.5 43210.5

2.5 V 3.0 V 3.5 V

4.0 V

3.5

0.20

0.15

, DRAIN−TO−SOURCE RESISTANCE (W)

0.10

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and

1.7 VGS = 4.5 V

1.6 I

= 1.5 A

1.5

1.4

1.3

1.2

1.1

1.0

, DRAIN−TO−SOURCE

0.9

DS(on)

0.8

RESISTANCE (NORMALIZED)

0.7

0.6

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

0.20

0.15

, DRAIN−TO−SOURCE RESISTANCE (W)

3.53.02.52.01.5

4.54.0

0.10

DS(on)

VGS = 4.5 V

TJ = 25°C

1010

98765432

Gate Voltage

1000

VGS = 0 V

TJ = 150°C

100

TJ = 125°C

, LEAKAGE (nA)

DSS

TJ = 85°C

150

1251007550250−25−50

302520151050

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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Page 5

NTLUF4189NZ

TYPICAL MOSFET CHARACTERISTICS

150

125

100

C, CAPACITANCE (pF)

rss

100

VGS = 4.5 V V I

t, TIME (ns)

0.1

Figure 9. Resistive Switching Time Variation

VGS = 0 V

= 25°C

iss

f = 1 MHz

oss

, GATE−TO−SOURCE VOLTAGE (V)

3020151050

VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

= 15 V

= 1.0 A

d(off)

d(on)

1.0 TJ = 150°C

TJ = 125°C

, SOURCE CURRENT (A)

0.1

TJ = −55°C

100101

RG, GATE RESISTANCE (W)

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

vs. Gate Resistance

VGS = 15 V I

= 1.5 A

= 25°C

TJ = 25°C

1.00.80.60.40.2

1.51.2510.750.50.250

1.2 1.

1.10.90.70.50.3 1.3

, DRAIN−TO−SOURCE VOLTAGE (V)

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

, GATE−TO−SOURCE VOLTAGE (V)

0.6

−25 75 100

TJ, TEMPERATURE (°C)

Figure 11. Threshold Voltage

ID = 250 mA

1501255025−50 0

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175

150

125

100

POWER (W)

SINGLE PULSE TIME (s)

Figure 12. Single Pulse Maximum Power

Dissipation

10.010.00010.00001

1000100100.10.0010.0000001

Page 6

NTLUF4189NZ

TYPICAL MOSFET CHARACTERISTICS

175

150

125

100

R(t) (°C/W)

VGS = 8 V SINGLE PULSE

0.1 TC = 25°C

, DRAIN CURRENT (AMPS)

0.01

0.1 1 100 V

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

10 ms

100 ms

1 ms

10 ms

Figure 13. Maximum Rated Forward Biased

Safe Operating Area

0.5

0.2

0.1

0.05

Single Pulse

0.02

0.01

PULSE TIME (sec)

0.10.010.0010.00010.000010.000001

1000100101

Figure 14. FET Thermal Response

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Page 7

C, TOTAL CAPACITANCE (pF)

NTLUF4189NZ

TYPICAL SCHOTTKY CHARACTERISTICS

TA = 25°C

VR, REVERSE VOLTAGE (V)

Figure 15. Total Capacitance

3020151050

1000

100

0.1

, INSTANTANEOUS FORWARD CURRENT (mA)

TJ = 125°C

, INSTANTANEOUS FORWARD VOLTAGE (mV)

Figure 16. Typical Forward Voltage Figure 17. Typical Reverse Current

TJ = 85°C

TJ = 25°C

TJ = −55°C

10000

1000

100

, REVERSE CURRENT (mA)

800

7006005004003002001000

0.1

VR, REVERSE VOLTAGE (V)

TJ = 125°C

TJ = 85°C

TJ = 25°C

2015525

20100

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Page 8

PIN ONE

REFERENCE

0.10 C

0.05 C

0.10 C

DETAIL B

TOP VIEW

SIDE VIEW

(A3)

NTLUF4189NZ

PACKAGE DIMENSIONS

UDFN6 1.6x1.6, 0.5P

CASE 517AT−01

ISSUE O

DETAIL A

OPTIONAL

CONSTRUCTION

EXPOSED Cu

DETAIL B

CONSTRUCTION

SEATING PLANE

OPTIONAL

MOLD CMPD

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND

0.30 mm FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.

MILLIMETERS

DIM MIN MAX

A 0.45 0.55 A1 0.00 0.05 A3 0.13 REF

b 0.20 0.30 D 1.60 BSC E 1.60 BSC

e 0.50 BSC

D1 1.14 1.34 D2 0.38 0.58 E1 0.54 0.74

K 0.20 −−−

L 0.15 0.35

L1 −−− 0.10

DETAIL A

6X 1

SOLDERMASK DEFINED MOUNTING FOOTPRINT*

L6X

BOTTOM VIEW

0.10 B

0.05ACC

NOTE 3

0.48

0.50 PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

1.34

0.58

1.90

0.74

0.32

DIMENSIONS: MILLIMETERS

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected]

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For additional information, please contact your local Sales Representative

NTLUF4189NZ/D