Datasheet ntljs4149 Datasheet

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NTLJS4149P

Power MOSFET

-30 V, -5.9 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package

Features

•WDFN Package with Exposed Drain Pad for Excellent Thermal

Conduction

•2x2 mm Footprint Same as SC-88 Package

•Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

•This is a Pb-Free Device

Applications

•Li Ion Battery Linear Mode Charging for Portable Power

Management in Noisy Environment

•DC-DC Conversion Buck/Boost Circuits

•High Side Switching

(BR)DSS

-30 V

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DS(on)

62 mW @ -4.5 V

75 mW @ -2.5 V

MAXV

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size.

= 25°C unless otherwise noted)

DSS

= 25°C

Steady

State

t ≤ 5 s T

Steady

State

t ≤ 5 s 3.2

Steady

State

= 85°C -3.3

= 25°C -5.9

= 25°C P

= 25°C

= 85°C -2.0

= 25°C

= 10 ms

STG

-30 V

±12 V

-4.5

-2.7

-18 A

-55 to 150

-1.5 A

260 °C

1.9

0.7 W

°C

P-CHANNEL MOSFET

Pin 1

(Note: Microdot may be in either location)

WDFN6

CASE 506AP

J9 = Specific Device Code M = Date Code G = Pb-Free Package

MARKING DIAGRAM

J9MG

PIN CONNECTIONS

(Top View)

ORDERING INFORMATION

Device Package Shipping

NTLJS4149PTAG WDFN6

(Pb-Free)

NTLJS4149PTBG WDFN6

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

3000/Tape & Reel

†

6 5 4

© Semiconductor Components Industries, LLC, 2007

July, 2007 - Rev. 0

1 Publication Order Number:

NTLJS4149P/D

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NTLJS4149P

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient – t ≤ 5 s (Note 3)

Junction-to-Ambient – Steady State Min Pad (Note 4)

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface Mounted on FR4 Board using the minimum recommended pad size.

180

°C/W

MOSFET ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage V

Drain-to-Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

DSS

GSS

= -250 mA, Ref to 25°C

= -24 V, V

= 0 V, I

= 0 V, V

= -250 mA

= 0 V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V

Negative Threshold Temperature Coefficient

GS(TH)/TJ

Drain-to-Source On-Resistance R

Forward Transconductance g

GS(TH)

DS(on)

= VDS, I

= -4.5 V, I

= -2.5 V, I

= -4.5 V, I

= -6.0 V, I

= -250 mA

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= -4.5 V, V

= -15 V

= -2.0 A

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(ON)

d(OFF)

= -4.5 V, V = -2.0 A, R

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V, IS = -1.5 A

= 0 V, dIS/dt = 100 A/ms,

= -1.5 A

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

-30 V

-1.8 mV/°C

TJ = 25°C -0.1 -1.0

TJ = 85°C -1.0 -10

= ±12 V ±0.1

-0.4 -1.0 V

3.1 mV/°C

= -2.0 A 43 62

= -2.0 A 56 75

= -4.5 A 43 62

= -3.0 A 10 S

960

130

9.9 15

= -15 V,

0.8

1.45

2.75

6.9

= -15 V,

= 2.0 W

TJ = 25°C -0.75 -1.2

TJ = 85°C -0.65

35 60

0.016

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NTLJS4149P

TYPICAL PERFORMANCE CURVES (T

, DRAIN CURRENT (AMPS)

-I

021

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.2

0.15

VGS = -1.9 V to -7 V

TJ = 25°C

-1.8 V

-1.7 V

-1.6 V

-1.5 V

-1.4 V

-1.3 V

-1.2 V

-1.1 V

ID = -2.0 A TJ = 25°C

= 25°C unless otherwise noted)

VDS ≥ -10 V

TJ = 25°C

, DRAIN CURRENT (AMPS)

-I

0.07

0.06

TJ = 100°C

TJ = -55°C

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

1.5

20.5

2.5

0.1

0.05

, DRAIN-TO-SOURCE RESISTANCE (W)

DS(on)

132

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 3. On-Resistance versus

Gate-to-Source Voltage

1.6 ID = -2.0 A

= -4.5 V

1.4

1.2

1.0

(NORMALIZED)

0.8

, DRAIN-TO-SOURCE RESISTANCE

0.6

DS(on)

-50 50250-25 75 125100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation with

Temperature

VGS = -2.5 V

0.05

0.04

, DRAIN-TO-SOURCE RESISTANCE (W)

0.03

DS(on)

4 789

-ID, DRAIN CURRENT (AMPS)

VGS = -4.5 V

410

Figure 4. On-Resistance versus Drain Current

and Gate Voltage

100000

10000

, LEAKAGE (nA)

1000

DSS

-I

150

100

015105

VGS = 0 V

TJ = 150°C

TJ = 100°C

20 25

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain-to-Source Leakage Current

versus Voltage

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NTLJS4149P

TYPICAL PERFORMANCE CURVES (T

2400

1800

VDS = 0 V

iss

1200

rss

600

C, CAPACITANCE (pF)

5 5 15 20

-V

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)

1000

VDD = -24 V ID = -2.0 A VGS = -4.5 V

100

t, TIME (ns)

1 10 100

VGS = 0 V

oss

010

-V

Figure 7. Capacitance Variation

RG, GATE RESISTANCE (OHMS)

TJ = 25°C

25 3010

d(off)

d(on)

= 25°C unless otherwise noted)

, GATE-TO-SOURCE VOLTAGE (VOLTS)

-V

ID = -4.5 A TJ = 25°C

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate-To-Source and Drain-To-Source

Voltage versus Total Charge

VGS = 0 V

TJ = 25°C

, SOURCE CURRENT (AMPS)

-I 0

-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

0.6

0.80.40.2

1.0

-V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

1.2

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

Figure 10. Diode Forward Voltage versus Current

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Page 5

PIN ONE

REFERENCE

0.10 C

0.08 C

NTLJS4149P

PACKAGE DIMENSIONS

WDFN6 2x2

CASE 506AP-01

ISSUE B

SEATING

PLANE

A0.10 Cb1B

0.05 C

0.43

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.

5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL LEAD IS CONNECTED TO TERMINAL LEAD # 4.

6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG.

MILLIMETERS

DIMAMIN MAX

0.70 0.80

A1 0.00 0.05 A3 0.20 REF

b 0.25 0.35

0.51 0.61

2.00 BSC

1.00 1.20

2.00 BSC

1.10 1.30

0.65 BSC

0.15 REF

0.20 0.30

0.27 REF

0.65 REF

SOLDERMASK DEFINED

MOUNTING FOOTPRINT*

2.30

1.10

0.35

BOTTOM VIEW

NOTE 5

A0.10 C

0.05 C

NOTE 3

1.25

0.34

0.65

PITCH

0.60

0.35

0.66

DIMENSIONS: MILLIMETERS

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTLJS4149P/D