Datasheet ntljs1102p Datasheet

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Page 1

NTLJS1102P

Power MOSFET

−8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package

Features

• WDFN Package with Exposed Drain Pad for Excellent Thermal

Conduction

• Lowest RDS(on) in 2 x 2 mm Package

• 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate

Drive

• 2 x 2 mm Footprint Same as SC−88 Package

• Low Profile (<0.8 mm) for Easy Fit in Thin Environments

• This is a Halide−Free Device

• This is a Pb−Free Device

Applications

• High Side Load Switch

• Li Ion Battery Linear Mode Charging

• Optimized for Battery and Load Management Applications in

Portable Equipment

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 30 mm2 [2 oz] including traces).

= 25°C unless otherwise stated)

DSS

Steady

State

t v 5 s TA = 25°C −8.1

Steady

State

t v 5 s 3.3

Steady

State

TA = 25°C

TA = 85°C −4.5

TA = 25°C

TA = 85°C −2.7

TA = 25°C P

tp = 10 ms

TJ, T

STG

−8 V

± 6 V

−6.2

1.9

−3.7

0.7 W

−30 A

−55 to

150

−5.5 A

260 °C

°C

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MAX

(BR)DSS

−8.0 V

Pin 1

J6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)

DS(on)

36 mW @ −4.5 V

45 mW @ −2.5 V

68 mW @ −1.8 V

90 mW @ −1.5 V

300 mW @ −1.2 V

P−CHANNEL MOSFET

WDFN6

CASE 506AP

PIN CONNECTIONS

(Top View)

ID MAXV

−6.2 A

−5.5 A

−3.0 A

−1.0 A

−0.2 A

MARKING DIAGRAM

J6MG

6 5 4

November, 2008 − Rev. 0

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 3 of this data sheet.

1 Publication Order Number:

NTLJS1102P/D

Page 2

NTLJS1102P

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – t v 5 s (Note 3)

Junction−to−Ambient – Steady State min Pad (Note 4)

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 30 mm2 [2 oz] including traces).

180

°C/W

MOSFET ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = −250 mA

ID = −250 mA, Ref to 25°C

VGS = 0 V,

VDS = −8V

VDS = 0 V, VGS = ±6V ±0.1

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V

Negative Threshold Temperature

Coefficient

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = −250 mA

VGS = −4.5 V, ID = −6.2 A 25 36 mW

VGS = −4.5 V, ID = −3.0 A 25 36

VGS = −2.5 V, ID = −5.5 A 34 45

VGS = −2.5 V, ID = −3.0 A 34 45

VGS = −1.8 V, ID = −3.0 A 45 68

VGS = −1.5 V, ID = −1.0 A 55 90

VGS = −1.2 V, ID = −0.2 A 80 300

Forward Transconductance g

VDS = −4 V, ID = −6.2 A 14.3 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz, VDS = −4 V

VGS = −4.5 V, VDS = − 4 V;

ID = −6.2 A

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

D(ON)

d(OFF)

VGS = −4.5 V, VDS = −4 V,

ID = −6.2 A, RG = 1 W

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

−8.0 V

−7.2 mV/°C

TJ = 25°C −1.0 mA

TJ = 85°C −10

−0.29 −0.72 V

2.7 mV/°C

1585

350

185

15.7 25

0.8

1.9

3.3

8.0

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Page 3

NTLJS1102P

MOSFET ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter UnitMaxTypMinTest ConditionSymbol

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn−On Delay Time t

D(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

8.0

VGS = −4.5 V, VDS = −4 V,

ID = −8.1 A, RG = 1 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V, IS = −1.0 A

VGS = 0 V, d

IS = −1.0 A

ISD/dt

TJ = 25°C −0.6 −1.0

TJ = 85°C −0.58

55 85

= 100 A/ms,

39 nC

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

ORDERING INFORMATION

Device Package Shipping

NTLJS1102PTBG WDFN6

3000 / Tape & Reel

(Pb−Free)

NTLJS1102PTAG WDFN6

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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Page 4

NTLJS1102P

TYPICAL CHARACTERISTICS

−4.5 V

, DRAIN CURRENT (A)

−I 5

−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

ID = −0.2 A

Figure 3. On−Resistance vs. Gate−to−Source

−2.5 V

−2.0 V

−1.8 V

−1.5 V

VGS = −1.2 V

1.5 4.0 5.0

ID = −6.2 A

−VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

4.53.53.02.52.01.00.50

TJ = 25°C

4.03.02.52.01.51.00.50

3.5 4.5

VDS = −5 V

, DRAIN CURRENT (A)

−I 5

TJ = 125°C

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

−1.2 V −1.5 V

TJ = 25°C

TJ = −55°C

1.25 2.0 2.5

−1.8 V

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

2.251.751.51.00.750.50.250

TJ = 25°C

−2.5 V

VGS = −4.5 V

18141062

201612840

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE (W)

DS(on)

1.5

VGS = −4.5 V

1.4 ID = −6.2 A

1.3

1.2

1.1

1.0

0.9

0.8

0.7

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

100,000

10,000

, LEAKAGE (nA)

1,000

DSS

1251007550250−25−50

150

100

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TJ = 150°C

TJ = 125°C

TJ = 85°C

87654321

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

Page 5

NTLJS1102P

TYPICAL CHARACTERISTICS

2400 2200

2000

1800 1600

1400

1200

oss

1000

800

600

C, CAPACITANCE (pF)

400

200

1000

VGS = −4.5 V VDD = −4 V ID = −6.2 A

100

t, TIME (ns)

Figure 9. Resistive Switching Time Variation

iss

VGS = 0 V T

= 25°C

f = 1 MHz

−V

rss

, GATE−TO−SOURCE VOLTAGE (V)

76543210

−V

−VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

d(off)

TJ = 125°C

d(on)

, SOURCE CURRENT (A)

−I

TJ = 150°C

0.1

TJ = 25°C

TJ = −55°C

100101

RG, GATE RESISTANCE (W)

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

vs. Gate Resistance

VDS = −4 V ID = −6.2 A TJ = 25°C

, DRAIN−TO−SOURCE VOLTAGE (V)

−V

1.0

14121086420

0.90.80.70.60.50.40.30.2

(V)

GS(th)

−V

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

ID = −250 mA

POWER (W)

1251007550250−25−50

150

1E+001E−011E−021E−03

1E+01 1E+02 1E+03

TJ, TEMPERATURE (°C) SINGLE PULSE TIME (s)

Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power

Dissipation

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Page 6

Duty Cycle = 0.5

TYPICAL CHARACTERISTICS

100

VGS = −6 V Single Pulse TC = 25°C

, DRAIN CURRENT (A)

−I

0.1

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 13. Maximum Rated Forward Biased

NTLJS1102P

100 ms

1 ms

10 ms

Limit

DS(on)

Thermal Limit Package Limit

Safe Operating Area

1001010.1

0.2

0.1

0.05

R(t), EFFECTIVE TRANSIENT

THERMAL RESPONSE (NORMALIZED)

0.01

Single Pulse

1E−011E−021E−031E−04

t, TIME (s)

1E+00 1E+01 1E+02 1E+03

Figure 14. FET Thermal Response

= 65°C/W

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Page 7

PIN ONE

REFERENCE

0.10 C

0.08 C

BOTTOM VIEW

NTLJS1102P

PACKAGE DIMENSIONS

WDFN6 2x2

CASE 506AP−01

ISSUE B

NOTE 5

0.05 C

A0.10 C

NOTE 3

SEATING PLANE

A0.10 Cb1B

0.43

1.25

0.34

0.65

PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.

5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL LEAD IS CONNECTED TO TERMINAL LEAD # 4.

6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG.

MILLIMETERS

DIMAMIN MAX

0.70 0.80

A1 0.00 0.05 A3 0.20 REF

b 0.25 0.35

0.51 0.61

2.00 BSC

1.00 1.20

2.00 BSC

1.10 1.30

0.65 BSC

0.15 REF

0.20 0.30

0.27 REF

0.65 REF

SOLDERING FOOTPRINT*

2.30

1.10

0.66

DIMENSIONS: MILLIMETERS

0.35

0.60

0.35

mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTLJS1102P/D