Datasheet ntljf3118n Datasheet

NTLJF3118N

Power MOSFET and Schottky Diode

20 V, 4.6 A, mCool] N-Channel, with

2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package

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Features

•WDFN 2x2 mm Package Provides Exposed Drain Pad for

Excellent Thermal Conduction

•Footprint Same as SC-88 Package

•1.8 V V

Rated R

GS

DS(on)

•Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

•Low VF 2 A Schottky Diode

•This is a Pb-Free Device

Applications

•DC-DC Boost/Buck Converter

•Low Voltage Hard Disk DC Power Source

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current

(Note 1)

Power Dissipation

(Note 1)

Continuous Drain Current

(Note 2)

Power Dissipation

(Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size.

= 25°C unless otherwise noted)

J

DSS

GS

T

I

P

I

P

I

DM

STG

T

D

S

L

T

= 25°C

Steady

State

t ≤ 5 s T

Steady

State

t ≤ 5 s 2.2

Steady

State

A

T

= 85°C 2.8

A

= 25°C 4.6

A

T

= 25°C

A

T

= 25°C

A

T

= 85°C 1.9

A

T

= 25°C

A

t

= 10 ms

p

20 V

±12 V

3.8

1.5

2.6

0.7

18 A

-55 to 150

1.8 A

260 °C

A

W

A

°C

MOSFET

R

Max

(BR)DSS

20 V

DS(on)

65 mW @ 4.5 V

85 mW @ 2.5 V

120 mW @ 1.8 V

SCHOTTKY DIODE

VR Max IF MaxVF Typ

S

0.41 V

A

K

SCHOTTKY DIODE

20 V

D

G

N-CHANNEL MOSFET

MARKING DIAGRAM

1

WDFN6

CASE 506AN

JK = Specific Device Code M = Date Code G = Pb-Free Package

(Note: Microdot may be in either location)

1 2 3

PIN CONNECTIONS

K

6

5

D

4

N/C

A

1

2

D

3

(Top View)

I

MaxV

D

3.8 A

2.0 A

1.7 A

2.0 A

JK MG

G

K

G

S

6 5 4

© Semiconductor Components Industries, LLC, 2007

August, 2007 - Rev. 1

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

1 Publication Order Number:

NTLJF3118N/D

NTLJF3118N

SCHOTTKY DIODE MAXIMUM RATINGS (T

Parameter

Peak Repetitive Reverse Voltage V

DC Blocking Voltage V

Average Rectified Forward Current I

= 25°C unless otherwise noted)

J

Symbol Value Unit

RRM

R

F

20 V

2.0 A

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient – t ≤ 5 s (Note 3)

Junction-to-Ambient – Steady State Min Pad (Note 4)

R

q

JA

R

q

JA

R

q

JA

3. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface Mounted on FR4 Board using the minimum recommended pad size.

MOSFET ELECTRICAL CHARACTERISTICS (T

Parameter

Symbol Test Conditions Min Typ Max Unit

= 25°C unless otherwise noted)

J

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

V

DS

V

= 0 V, I

GS

I

= 250 mA, Ref to 25°C

D

= 16 V, V

V

DS

GS

= 0 V, V

D

= 0 V

GS

= 250 mA

TJ = 25°C 1.0

TJ = 85°C 10

= ±8.0 V $100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient

V

GS(TH)/TJ

Drain-to-Source On-Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

V

GS

V

GS

DS

= VDS, I

= 4.5, I

= 2.5, I

= 1.8, I

= 10 V, I

= 250 mA

D

= 3.8 A 37 65

D

= 2.0 A 46 85

D

= 1.7 A 65 120

D

=1.7 A 4.2 S

D

0.4 0.7 1.0 V

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

V

= 0 V, f = 1 MHz, V

GS

V

= 4.5 V, V

GS

DS

= 10 V, I

DS

D

= 10 V

= 3.8 A

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

V

GS

I

D

= 4.5 V, V

= 1.0 A, R

= 16 V,

DD

= 2.0 W

G

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

V

SD

RR

VGS = 0 V, IS =1.0 A TJ = 25°C 0.69 1.0 V

V

GS

= 0 V, d

= 100 A/ms, I

ISD/dt

= 1.0 A

S

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

20 V

83

58

°C/W

177

10.4 mV/°C

mA

-3.0 mV/°C

mW

271

pF

72

43

3.7

nC

0.3

0.6

1.0

3.8

ns

4.7

11.1

5.8

10.2 ns

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NTLJF3118N

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Parameter

Maximum Instantaneous

Forward Voltage

Maximum Instantaneous

Reverse Current

Symbol Test Conditions Min Typ Max Unit

V

F

I

R

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Parameter

Maximum Instantaneous

Forward Voltage

Maximum Instantaneous

Reverse Current

Symbol Test Conditions Min Typ Max Unit

V

F

I

R

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Parameter Symbol Test Conditions Min Ty p Max Unit

Maximum Instantaneous

Forward Voltage

Maximum Instantaneous

Reverse Current

V

F

I

R

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Parameter

Capacitance C V

Symbol Test Conditions Min Typ Max Unit

= 25°C unless otherwise noted)

J

I

= 0.1 A 0.26 0.35

F

I

= 1.0 A 0.35 0.42

F

I

= 2.0 A 0.41 0.52

F

V

= 20 V 0.20 5.0

R

V

= 10 V 0.045 1.0

R

= 85°C unless otherwise noted)

J

I

= 0.1 A 0.18

F

I

= 1.0 A 0.29

F

I

= 2.0 A 0.36

F

V

= 20 V 4.9

R

V

= 10 V 1.6

R

= 125°C unless otherwise noted)

J

I

= 0.1 A 0.13

F

I

= 1.0 A 0.25

F

I

= 2.0 A 0.33

F

V

= 20 V 42

R

V

= 10 V 13

R

= 25°C unless otherwise noted)

J

= 5.0 V, f = 1.0 MHz 52.3 pF

R

V

mA

V

mA

V

mA

ORDERING INFORMATION

Device Package Shipping

NTLJF3118NTAG WDFN6

3000 / Tape & Reel

(Pb-Free)

NTLJF3118NTBG WDFN6

3000 / Tape & Reel

(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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3

NTLJF3118N

TYPICAL N-CHANNEL PERFORMANCE CURVES (T

10

8

6

4

2

, DRAIN CURRENT (AMPS)

D

I

0

0 0.5 21

0.1

0.09

0.08

VGS = 4 V to 2.2 V

, DRAIN-TO-SOURCE VOLTAGE (V)

V

DS

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

TJ = 25°C

1.5 2.5 3.5

3

TJ = 25°C I

= 3.8 A

D

2.0 V

1.8 V

1.6 V

1.4 V

1.2 V

10

VDS ≥ 10 V

8

6

4

TJ = 100°C

, DRAIN CURRENT (AMPS)

2

D

I

0

4

1

0.14 TJ = 25°C

0.12

0.1

= 25°C unless otherwise noted)

J

TJ = 25°C

TJ = -55°C

1.5

, GATE-TO-SOURCE VOLTAGE (V)

V

GS

2

VGS = 1.8 V

2.5

0.07

0.06

0.05

0.04

, DRAIN-TO-SOURCE RESISTANCE (W)

0.03

DS(on)

R

1.0

VGS, GATE-TO-SOURCE VOLTAGE (V)

4.03.0

Figure 3. On-Resistance versus Drain Current

1.5 ID = 3.8 A

1.4

V

= 4.5 V

GS

1.3

1.2

1.1

1.0

(NORMALIZED)

0.9

0.8

, DRAIN-TO-SOURCE RESISTANCE

0.7

DS(on)

-50 50250-25 75 125100

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation with

Temperature

0.08

0.06

VGS = 2.5 V

0.04 VGS = 4.5 V

0.02

, DRAIN-TO-SOURCE RESISTANCE (W)

0

DS(on)

R

1

5.02.0

6.0

32

410

56789

ID, DRAIN CURRENT (A)

Figure 4. On-Resistance versus Drain Current

and Gate Voltage

10000

1000

, LEAKAGE (nA)

DSS

I

150

100

VGS = 0 V

TJ = 150°C

TJ = 100°C

212104

6 8 14 16 18

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

20

Figure 6. Drain-to-Source Leakage Current

versus Voltage

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NTLJF3118N

TYPICAL N-CHANNEL PERFORMANCE CURVES (T

600

500

400

300

200

C, CAPACITANCE (pF)

100

0

10

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)

100

VDS = 0 V

C

iss

C

rss

5 5 15 20

VGS = 0 V

C

oss

010

V

GS

V

DS

Figure 7. Capacitance Variation

VDD = 16 V I

= 1.0 A

D

= 4.5 V

V

GS

t

d(off)

TJ = 25°C

= 25°C unless otherwise noted)

J

5

QT

4

3

V

DS

Q

GS

2

Q

GD

V

GS

1

, GATE-TO-SOURCE VOLTAGE (VOLTS)

V

GS

0

123

ID = 3.8 A T

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate-To-Source and Drain-To-Source

Voltage versus Total Charge

2

VGS = 0 V TJ = 25°C

1.5

= 25°C

J

V

20

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

16

12

8

4

0

4

t

f

10

t, TIME (ns)

1

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

t

r

t

d(on)

1

0.5

, SOURCE CURRENT (AMPS)

S

I

0

0.4

0.6

, SOURCE-TO-DRAIN VOLTAGE (V)

V

SD

0.80.70.5

Figure 10. Diode Forward Voltage versus Current

0.9

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NTLJF3118N

)

10

TJ = 125°C

1.0

0.1

, INSTANTANEOUS FORWARD CURRENT (AMPS

F

I

0.1 0.2 0.4

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

TYPICAL SCHOTTKY PERFORMANCE CURVES (T

10

TJ = 85°C

TJ = 25°C

TJ = -55°C

0.6 0.8

1.00.70.3 0.5

0.9 0.9

1.0

0.1

, INSTANTANEOUS FORWARD CURRENT (AMPS)

F

I

= 25°C unless otherwise noted)

J

TJ = 85°C

TJ = 125°C

TJ = 25°C

0.6 0.80.1 0.2 0.4

VF, MAXIMUM FORWARD VOLTAGE (V)

1.00.70.3 0.5

Figure 11. Typical Forward Voltage Figure 12. Maximum Forward Voltage

1.0E+0

100E-3

TJ = 125°C

10E-3

TJ = 85°C

1.0E+0

100E-3

10E-3

TJ = 125°C

TJ = 85°C

1.0E-3

, REVERSE CURRENT (AMPS)

100E-6 R

I

10E-6

1.0E-3

TJ = 25°C

0

VR, REVERSE VOLTAGE (V)

10 20

100E-6

R

I , MAXIMUM REVERSE CURRENT (AMPS)

10E-6

0

, REVERSE VOLTAGE (V)

V

R

10 20

Figure 13. Typical Reverse Current Figure 14. Maximum Reverse Current

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NTLJF3118N

PACKAGE DIMENSIONS

WDFN6, 2x2

CASE 506AN-01

ISSUE B

6X

2X

PIN ONE

REFERENCE

0.10 C

0.08 C

6X

L

D2

D

A

B

E

A3

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN

0.15 AND 0.20mm FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.

MILLIMETERS

DIMAMIN MAX

0.70 0.80

A1 0.00 0.05 A3 0.20 REF

b 0.25 0.35

D 2.00 BSC

D2 0.57 0.77

2.00 BSC

E

E2

0.90 1.10

e

0.65 BSC

0.25 REF

K

L

0.20 0.30

J

0.15 REF

A

A1

SEATING

C

D2

4X

1

3

e

PLANE

6X

0.43

SOLDERING FOOTPRINT*

2.30

6X

0.35

1

E2

2X

0.65

PITCH

6X

K

6

J6X

BOTTOM VIEW

4

b

6X

A0.10 C

B

0.05 C

NOTE 3

0.250.25

2X

0.72

1.05

DIMENSIONS: MILLIMETERS

*For additional information on our Pb-Free strategy

and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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For additional information, please contact your local Sales Representative

NTLJF3118N/D

7