Datasheet ntlgf3402p Datasheet

NTLGF3402P

l

s

l

Power MOSFET and Schottky Diode

−20 V, −3.9 A FETKY), P−Channel,

2.0 A Schottky Barrier Diode, DFN6

Features

• Flat Lead 6 Terminal Package 3x3x1 mm

• Enhanced Thermal Characteristics

• Low VF and Low Leakage Schottky Diode

• Reduced Gate Charge to Improve Switching Response

• This is a Pb−Free Device

Applications

• Buck Converter

• High Side DC−DC Conversion Circuits

• Power Management in Portable, HDD and Computing

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MOSFET

R

TYP

(BR)DSS

−20 V

DS(on)

110 mW @ −4.5 V

SCHOTTKY DIODE

VR MAX IF MAXVF TYP

20 V

2

0.36 V

5

ID MAXV

−3.9 A

2.0 A

13

2

MOSFET MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V Gate−to−Source Voltage V Continuous Drain

Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 0.5 in sq).

Steady

State

t ≤ 10 s T Steady

State

t ≤ 10 s 3.0

Steady

State

t

= 25°C unless otherwise noted)

J

Symbol Value Unit

DSS

GS

I

P

I

P

DM

T

D

S

L

T

= 25°C

A

T

= 85°C −2.0

A

= 25°C −3.9

A

T

= 25°C

A

T

= 25°C

A

T

= 85°C −1.7

A

T

= 25°C

A

= 10 ms

p

STG

−20 V ±12 V

−2.7

1.6

−2.3

1.14 W

11 A

−55 to 150

1.1 A

260 °C

A

W

A

°C

3

4

Heatsink

1 6

654

1, 6 = Anode 2, 5 = Source 3 = Gate 4 = Drain/Cathode

MARKING

DIAGRAMS

1

DFN6

1

CASE 506AH

3402 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

3402

AYWW

G

ORDERING INFORMATION

Device Package Shipping

NTLGF3402PT1G

NTLGF3402PT2G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD801 1/D.

DFN6

(Pb−Free)

DFN6

(Pb−Free)

3000 / Tape & Ree

†

March, 2006 − Rev. 1

1 Publication Order Number:

NTLGF3402P/D

NTLGF3402P

SCHOTTKY DIODE MAXIMUM RATINGS (T

Parameter

Peak Repetitive Reverse Voltage V DC Blocking Voltage V Average Rectified Forward Current I

= 25°C unless otherwise noted)

J

Symbol Max Unit

RRM

R

F

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient – t ≤ 10 s (Note 2) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – t ≤ 10 s (Note 3)

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

MOSFET ELECTRICAL CHARACTERISTICS (T

Parameter

Symbol Test Conditions Min Typ Max Unit

= 25°C unless otherwise noted)

J

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage

Temperature Coefficient Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

V

DS

V

GS

= −16 V, V

V

DS

= 0 V, I

GS

= 0 V, V

= −250 mA

D

= 0 V

= ±12 V ±100 nA

GS

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage Gate Threshold

Temperature Coefficient Drain−to−Source On−Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

V

GS

V

GS

V

GS

V

DS

= VDS, I

= −4.5, I = −2.5, I

= −10 V, I

= −250 mA

D

= −2.7 A 110 140 mW

D

= −1.0 A 190 225

D

= −2.7 A 4.8 S

D

CHARGES AND CAPACITANCES

Input Capacitance Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Threshold Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q

C

ISS OSS RSS

G(TOT)

G(TH)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

DS

V

= −4.5 V, V

GS

I

D

= −10 V

DS

= −2.7 A

= −10 V,

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time Rise Time t Turn−Off Delay Time t Fall Time t

t

d(ON)

r

d(OFF)

f

V

GS

I

D

= −4.5 V, V = −2.7 A, R

= −16 V,

DD

= 2.4 W

G

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

R

q

JA

R

q

JA

R

q

JA

R

q

JA

−20 V

TJ = 25°C −1.0 mA

TJ = 125°C −5.0

−0.6 −2.0 V

20 V 20 V

2.0 A

110 °C/W

58 °C/W 79 °C/W 41 °C/W

−9.0 mV/°C

2.7 mV/°C

230 350

pF

105 225

40 75

3.8 10

nC

0.32

0.7

1.6

6.2 15

ns 22 30 25 45 34 60

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NTLGF3402P

MOSFET ELECTRICAL CHARACTERISTICS (T

Parameter

Symbol Test Conditions Min Typ Max Unit

= 25°C unless otherwise noted)

J

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage Reverse Recovery Time t Charge Time t Discharge Time t Reverse Recovery Charge Q

V

SD

RR

a b

RR

V

GS

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Parameter

Maximum Instantaneous Forward Voltage

Maximum Instantaneous Reverse Current

Symbol Test Conditions Min Typ Max Unit

V

F

I

R

= 0 V, I

= −1.1 A TJ = 25°C −0.8 −1.2 V

S

V

GS

dI

= 25°C unless otherwise noted)

J

V

R

= 0 V, I

S

/dt = 100 A/ms

S

I

= 0.1 A 0.32 0.34

F

I

= 1.0 A 0.36 0.39

F

= 5 V, TJ = 100°C 12 mA

V

= 10 V 70 mA

R

V

= 20 V 225

R

6. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

7. Switching characteristics are independent of operating junction temperatures.

= −1.1 A ,

53

ns 15 38 37 nC

V

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3

NTLGF3402P

0

6

TYPICAL P−CHANNEL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

−2.8 V

5

VGS = −3 V to −10 V

−2.6 V

4

3

2

DRAIN CURRENT (AMPS)

D,

1

−I 0

0.4

0

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V

DS

1.6

2

TJ = 25°C

−2.4 V

−2.2 V

−2 V

−1.8 V

−1.6 V

2.41.20.8

2.8

Figure 1. On−Region Characteristics

VDS ≥ −10 V

5

4

3

2

DRAIN CURRENT (AMPS)

D,

1

−I 0

1

100°C

25°C

TJ = −55°C

21.5 2.5

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

3

43.5

0.25 TJ = 25°C

0.2

ID = −2.7 A T

= 25°C

J

VGS = −2.5 V

0.15

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

DS(on),

R

0

35

24

−V

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

6910

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.5 ID = −2.7 A V

= −4.5 V

GS

1

DRAIN−TO−SOURCE

DS(on),

R

RESISTANCE (NORMALIZED)

0.5

−50 0−25 25

−TJ, JUNCTION TEMPERATURE (°C)

75 150

50 125100

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

87

0.05

1.5 2.5 3.5

DS(on),

R

−ID, DRAIN CURRENT (AMPS)

VGS = −4.5 V

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

1000

, LEAKAGE (nA)

100

DSS

−I

10

5

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 150°C

TJ = 100°C

10 15

2

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−to−Source Leakage Current

vs. Voltage

4

NTLGF3402P

C, CAPACITANCE (pF)

TYPICAL P−CHANNEL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

700

VDS = 0 V

600

C

ISS

500

400

300

C

RSS

200

100

0

10 0

5

−V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

100

GS

VGS = 0 V

510

−V

DS

C

OSS

TJ = 25°C

15

t

f

t

d(off)

t

r

20

6

Q

T

−V

4

DS

Q

GS

Q

GD

−V

GS

2

GATE−TO−SOURCE VOLTAGE (V)

GS,

0

−V 01234

ID = −2.7 A T

= 25°C

J

12

10

8

6

4

2

0

DRAIN−TO−SOURCE VOLTAGE (V)

DS,

−V

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

10

VGS = 0 V

10

t, TIME (ns)

VDS = −16 V I

= −2.7 A

D

= −4.5 V

V

GS

1

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

t

d(on)

TJ = 100°C

TJ = 25°C

1

TJ = 150°C

, SOURCE CURRENT (AMPS)

S

−I

0.1

0.5 0.7 0.8

−V

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

SD

TJ = −55°C

Figure 10. Diode Forward Voltage vs. Current

0.90.60.4

1.0

0.001

0.000001 0.00001 0.001 0.01 1 100 1000

EFFECTIVE TRANSIENT THERMAL RESPONSE

thja(t),

R

0.0001 0.1 10 t, TIME (s)

Figure 11. FET Thermal Response

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Single Pulse

NTLGF3402P

10

I

, INSTANTANEOUS FORWARD

I

REVERSE CURRENT (AMPS)

5

10

0

TYPICAL SCHOTTKY PERFORMANCE CURVES (T

TJ = 100°C

TJ = 125°C

1

CURRENT (AMPS)

F

0.1

0.10

0.30

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 12. Typical Forward Voltage Figure 13. Maximum Forward Voltage

1E+0

100E−3

TJ = 25°C

TJ = −40°C

TJ = 125°C

0.50

1

CURRENT (AMPS)

TJ = 125°C

, INSTANTANEOUS FORWARD

F

I

0.1

0.10 VF, MAXIMUM INSTANTANEOUS FORWARD

1E+0

100E−3

= 25°C unless otherwise noted)

J

TJ = 100°C

TJ = 25°C

0.30 0.50

VOLTAGE (VOLTS)

TJ = 125°C

10E−3

1E−3

100E−6

R,

10E−6

0

3.5

3

2.5

square wave

2

Ipk/Io = p

1.5

Ipk/Io = 5

1

Ipk/Io = 10 Ipk/Io = 20

0.5 0

AVERAGE FORWARD CURRENT (AMPS)

25

O,

I

TJ = 100°C

TJ = 25°C

10

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. Typical Reverse Current

freq = 20 kHz

dc

45 145

65 125105

TL, LEAD TEMPERATURE (°C)

85

10E−3

1E−3

100E−6

MAXIMUM REVERSE CURRENT (AMPS)

R,

10E+0

I

20

0

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Maximum Reverse Current

1.8

1.6

1.4

1.2 1

Ipk/Io = 20

0.8

0.6

0.4

0.2 0

, AVERAGE POWER DISSIPATION (WATTS)

01

FO

P

Ipk/Io = 10

0.5 1.5 2.5

IO, AVERAGE FORWARD CURRENT (AMPS)

Ipk/Io = p

Ipk/Io = 5

TJ = 100°C

TJ = 25°C

10

square wave

2

dc

3.

3

Figure 16. Current Derating

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Figure 17. Forward Power Dissipation

0.1

0.01

NTLGF3402P

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.001

0.000001 0.00001 0.001 0.01 1 100 1000

EFFECTIVE TRANSIENT THERMAL RESPONSE

thja(t),

R

Single Pulse

0.0001 0.1 10 t, TIME (s)

Figure 18. Thermal Response Junction−to−Ambient

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NTLGF3402P

PACKAGE DIMENSIONS

DFN6 3*3 MM, 0.95 PITCH

CASE 506AH−01

ISSUE O

PIN 1

REFERENCE

2X

6X

D

C0.15

TOP VIEW

C0.10

C0.08

SIDE VIEW

D2

L

13

K

64

BOTTOM VIEW

(A3)

A

B

E

A

SEATING PLANE

A1

C

NOTES:

1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMESNION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.90 1.00 A1 0.00 0.03 0.05 A3 0.20 REF

b 0.35 0.40 0.45

D 3.00 BSC D2 2.40 2.50 2.60

E 3.00 BSC E2 1.50 1.60 1.70

e 0.95 BSC

K 0.21 −−− −−−

L 0.30 0.40 0.50

SOLDERING FOOTPRINT*

0.450

4X

e

0.0177

0.950

0.0374

E2

1.700

0.685

SCALE 10:1

mm

ǒ

inches

Ǔ

6X

b

0.10

0.05

(NOTE 3)

C AB

C

3.31

0.130

0.63

0.025

2.60

0.1023

FETKY is a registered trademark of International Rectifier Corporation.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTLGF3402P/D

8