Datasheet ntlgd3502n-d Datasheet

NTLGD3502N Power MOSFET

20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package

Features

•Exposed Drain Package

•Excellent Thermal Resistance for Superior Heat Dissipation

•Low Threshold Levels

•Low Profile (< 1 mm) Allows It to Fit Easily into Extremely Thin

Environments

•This is a Pb-Free Device

Applications

•DC-DC Converters (Buck and Boost Circuits)

•Power Supplies

•Hard Disk Drives

MOSFET I MAXIMUM RATINGS (T

Parameter

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Steady

State

t ≤ 5.0 s T

Steady

State

MOSFET II MAXIMUM RATINGS (T

Parameter

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm

2

, 1 oz. Cu

Steady

State

t ≤ 5.0 s T

Steady

State

= 25°C unless otherwise noted)

J

Symbol Value Unit

DSS

GS

T

= 25°C

A

T

= 85°C 3.0

A

= 25°C 5.8

A

T

= 25°C

A

t ≤10 ms

= 25°C unless otherwise noted)

J

T

= 25°C

A

T

= 85°C 2.5

A

= 25°C 4.6

A

T

= 25°C

A

t ≤10 ms

I

D

P

D

I

DM

STG

S

T

L

Symbol Value Unit

DSS

GS

I

D

P

D

I

DM

STG

S

T

L

20 V

±20 V

4.3

1.74 W

17.2 A

-55 to 150

1.6 A

260 °C

20 V

±12 V

3.6

1.74 W

13.8 A

-55 to 150

1.7 A

260 °C

A

°C

A

°C

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MOSFET I

(BR)DSS

20 V

MAX

DS(on)

60 mW @ 4.5 V

ID MAXV

5.8 A

R

MOSFET II

(BR)DSS

20 V

3

Heatsink 1

1

MAX

DS(on)

90 mW @ 4.5 V

4

6

Heatsink 2

2

5

1 = Gate 1 2, 5 = Drain 1/Source 2 3 = Gate 2 4 = Drain 2 6 = Source 1

ID MAXV

4.6 A

13

2

12

654

R

MARKING

DIAGRAMS

DFN6

1

CASE 506AG

3502 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

1

3502

AYWW

G

ORDERING INFORMATION

Device Package Shipping

NTLGD3502NT1G DFN6

(Pb-free)

NTLGD3502NT2G DFN6

(Pb-free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

3000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2007

July, 2007 - Rev. 1

1 Publication Order Number:

NTLGD3502N/D

NTLGD3502N

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t ≤ 5 s (Note 1)

Junction-to-Ambient – Steady State min Pad (Note 2)

Junction-to-Ambient – Pulsed (25% duty cycle) min Pad (Note 2)

R

q

JA

R

q

JA

R

q

JA

R

q

JA

72

40

110

60

°C/W

MOSFET I ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Parameter Symbol Test Conditions Min Typ Max Unit

Off Characteristics

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 250 mA

ID = 250 mA, ref to 25°C

VGS = 0 V, VDS = 16 V

VDS = 0 V, VGS = ±20 V ±100 nA

On Characteristics (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient

Drain-to-Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

VGS = VDS, ID = 250 mA

VGS = 4.5 V, ID = 4.3 A 50 60

VDS = 10 V, ID = 4.0 A 5.9 S

Charges, Capacitances & Gate Resistance

Input Capacitance

C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

G(TOT)

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Gate Resistance R

ISS

OSS

RSS

GS

GD

G

VGS = 0 V, f = 1 MHz, VDS = 10 V

VGS = 4.5 V, VDS = 10 V; ID = 4.3 A

(Note 3)

Switching Characteristics, VGS = 4.5 V (Note 4)

Turn-On Delay Time

t

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

d(ON)

r

f

VGS = 4.5 V, VDD = 10 V,

I

= 4.3 A, RG = 10 W

D

Drain-Source Diode Characteristics

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V, IS = 1.6 A

VGS = 0 V, d

ISD/dt

I

= 1.0 A

S

3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

4. Switching characteristics are independent of operating junction temperatures

20 V

10 mV/°C

TJ = 25°C 1.0 mA

TJ = 125°C 10

1.0 1.7 2.0 V

-4.4 mV/°C

250 480

138 200

52 90

2.9 4.0

1.0

1.1

1.5

7.0 12

17.5 25

8.6 15

3.3 5.0

TJ = 25°C 0.78 1.2

TJ = 125°C 0.63

= 100 A/ms,

16.7

8.2

8.5

7.0 nC

mW

pF

nC

W

ns

V

ns

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2

NTLGD3502N

MOSFET II ELECTRICAL CHARACTERISTICS (T

Parameter

Symbol Test Conditions Min Typ Max Unit

= 25°C unless otherwise noted)

J

Off Characteristics

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 250 mA

ID = 250 mA, ref to 25°C

VGS = 0 V, VDS = 16 V

VDS = 0 V, VGS = ±12 V ±100 nA

On Characteristics (Note 5)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient

Drain-to-Source On Resistance R

V

GS(TH)

V

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 4.5 V, ID = 3.4 A 70 90 mW

VGS = 2.5 V, ID = 1.7 A 95 120

Forward Transconductance g

FS

VDS = 10 V, ID = 3.4 A 6.7 S

Charges, Capacitances & Gate Resistance

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

VGS = 0 V, f = 1 MHz, VDS = 10 V

VGS = 4.5 V, VDS = 10 V; ID = 3.4 A

Switching Characteristics, VGS = 4.5 V (Note 6)

Turn-On Delay Time

t

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

d(ON)

r

f

VGS = 4.5 V, VDD = 16 V,

I

= 3.4 A, RG = 10 W

D

Drain-Source Diode Characteristics

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

SD

RR

a

b

RR

VGS = 0 V, IS = 1.7 A

VGS = 0 V, d

ISD/dt

I

= 1.0 A

S

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

6. Switching characteristics are independent of operating junction temperatures

20 V

22 mV/°C

TJ = 25°C 1 mA

TJ = 125°C 10

0.6 2.0 V

-2.8 mV/°C

144 275

67 125

22 40

2.1 5.0

0.11

0.42

0.7

4.8 10

13.6 25

9.0 20

1.9 5.0

TJ = 25°C 0.8 1.15

TJ = 150°C 0.63

= 100 A/ms,

12

8.0

4.0

5.0 nC

pF

nC

ns

V

ns

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NTLGD3502N

TYPICAL MOSFET I N-CHANNEL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

10 10

9

8

3.5 V

7

6

VGS = 3.7 V to 6.5 V

TJ = 25°C

3.3 V

3.1 V

2.9 V

5

4

2.7 V

3

DRAIN CURRENT (AMPS)

2

D,

I

1

2.5 V

2.3 V

0

1

0

V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

32

5

4

678

Figure 1. On-Region Characteristics

0.2

0.1

ID = 4.3 A T

= 25°C

J

0.0510

0.0505

0.0500

0.0495

VDS ≥ 10 V

9

8

7

6

5

4

3

DRAIN CURRENT (AMPS)

2

D,

I

1 0

1

21.5 2.5

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

VGS = 4.5 V

25°C

100°C

TJ = -55°C

3

43.5

DRAIN-TO-SOURCE RESISTANCE (W)

0

2.5

DS(on),

R

V

, GATE-TO-SOURCE VOLTAGE (VOLTS)

GS

Figure 3. On-Resistance vs. Gate-to-Source

Voltage

1.7 ID = 4.3 A

1.6 V

= 4.5 V

GS

1.5

1.4

1.3

1.2

1.1

1.0

DRAIN-TO-SOURCE

0.9

DS(on),

0.8

R

RESISTANCE (NORMALIZED)

0.7

0.6

50 125100

-50 0-25 25

75 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation with

Temperature

0.0490

DRAIN-TO-SOURCE RESISTANCE (W)

0.0485

6.0

5.55.04.53.0 4.03.5

R

1.5 2.5 4.5

DS(on),

ID, DRAIN CURRENT (AMPS)

3.5

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

10,000

VGS = 0 V

TJ = 150°C

1000

, LEAKAGE (nA)

DSS

I

TJ = 125°C

100

520

10 15

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain-to-Source Leakage Current

vs. Voltage

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4

400

350

300

250

200

NTLGD3502N

TYPICAL MOSFET I N-CHANNEL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

6

VGS = 0 V

C

ISS

TJ = 25°C

Q

T

V

DS

4

Q

GS

Q

GD

12

10

8

V

GS

6

150

100

C, CAPACITANCE (pF)

C

OSS

C

RSS

50

0

010 25

5

15 20

DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

100

VDD = 10 V I

= 4.3 A

D

= 4.5 V

V

GS

t

r

10

t, TIME (ns)

t

d(off)

t

d(on)

t

f

1

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

2

GATE-TO-SOURCE VOLTAGE (V)

GS,

0

V

012

30

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate-to-Source and

Drain-to-Source Voltage vs. Total Charge

10

VGS = 0 V

TJ = 125°C

TJ = 150°C

1

, SOURCE CURRENT (AMPS)

S

I

0.1

0.5 0.7 0.8

V

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

SD

Figure 10. Diode Forward Voltage vs. Current

ID = 4.3 A T

= 25°C

J

TJ = 25°C

TJ = -55°C

4

2

DRAIN-TO-SOURCE VOLTAGE (V)

DS,

0

V

3

0.90.60.4

1.0

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.001

0.000001 0.00001 0.001 0.01 1 100 1000

EFFECTIVE TRANSIENT THERMAL RESPONSE

thja(t),

R

Single Pulse

0.0001 0.1 10 t, TIME (s)

Figure 11. FET Thermal Response

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5

NTLGD3502N

TYPICAL MOSFET II N-CHANNEL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

77

6

VGS = 2.4 V to 10 V

5

4

TJ = 25°C

2.2 V

2 V

VDS ≥ 10 V

6

5

4

3

2

DRAIN CURRENT (AMPS)

D,

1

I

0

0.4

0

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

Figure 12. On-Region Characteristics

0.2

1.6

1.8 V

1.6 V

2

DRAIN CURRENT (AMPS)

D,

I

1

0

3.2 3.6 4

232.41.20.8

2.8

1

0.12 ID = 3.4 A T

= 25°C

J

100°C

25°C

TJ = -55°C

21.5 2.5

3

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 13. Transfer Characteristics

TJ = 25°C

43.5

0.1

VGS = 2.5 V

0.1

0.08

DRAIN-TO-SOURCE RESISTANCE (W)

DS(on),

R

0

1

23

V

, GATE-TO-SOURCE VOLTAGE (VOLTS)

GS

Figure 14. On-Resistance vs. Gate-to-Source

Voltage

1.8 ID = 3.4 A V

= 4.5 V

GS

1.6

1.4

1.2

DRAIN-TO-SOURCE

1

DS(on),

0.8

R

RESISTANCE (NORMALIZED)

0.6

-50 0-25 25

TJ, JUNCTION TEMPERATURE (°C)

75 150

50 125100

0.06

DRAIN-TO-SOURCE RESISTANCE (W)

54

0.04

6

1.5 2.5 4.5

DS(on),

R

ID, DRAIN CURRENT (AMPS)

VGS = 4.5 V

3.5

Figure 15. On-Resistance vs. Drain Current

and Gate Voltage

1000

VGS = 0 V

TJ = 150°C

100

, LEAKAGE (nA)

10

DSS

I

1

5

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

TJ = 100°C

10 15

20

Figure 16. On-Resistance Variation with

Temperature

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Figure 17. Drain-to-Source Leakage Current

vs. Voltage

6

NTLGD3502N

TYPICAL MOSFET II N-CHANNEL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

400

VGS = 0 V

TJ = 25°C

300

200

100

C, CAPACITANCE (pF)

C

ISS

C

OSS

C

RSS

0

015

510

DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 18. Capacitance Variation

100

VDS = 16 V I

= 3.4 A

D

= 4.5 V

V

GS

6

4

V

Q

GS

2

GATE-TO-SOURCE VOLTAGE (V)

GS,

0

V

012

20

Drain-to-Source Voltage vs. Total Charge

10

Q

T

DS

Q

GD

Qg, TOTAL GATE CHARGE (nC)

Figure 19. Gate-to-Source and

VGS = 0 V

TJ = 100°C

V

GS

ID = 3.4 A T

= 25°C

J

TJ = 25°C

12

10

8

6

4

2

0

DRAIN-TO-SOURCE VOLTAGE (V)

DS,

V

t

d(off)

t

d(on)

r

t

f

10

t, TIME (ns)

1

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 20. Resistive Switching Time Variation

vs. Gate Resistance

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

TJ = 150°C

1

, SOURCE CURRENT (AMPS)

S

I

0.1

0.5 0.7 0.8

V

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

SD

TJ = -55°C

Figure 21. Diode Forward Voltage vs. Current

0.90.60.4

1.0

0.001

0.000001 0.00001 0.001 0.01 1 100 1000

EFFECTIVE TRANSIENT THERMAL RESPONSE

thja(t),

R

0.0001 0.1 10 t, TIME (s)

Figure 22. FET Thermal Response

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7

Single Pulse

PIN 1

REFERENCE

2X

6X

D

C0.15

TOP VIEW

C0.10

C0.08

SIDE VIEW

D2

L

13

D3

K

(A3)

NTLGD3502N

PACKAGE DIMENSIONS

DFN6 3*3 MM, 0.95 PITCH

CASE 506AG-01

A

ISSUE O

B

E

A

SEATING PLANE

A1

4X

e

C

0.450

0.0177

E2

NOTES:

1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMESNION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.90 1.00 A1 0.00 0.03 0.05 A3 0.20 REF

b 0.35 0.40 0.45

D 3.00 BSC D2 1.00 1.10 1.20 D3 0.65 0.75 0.85

E 3.00 BSC E2 1.50 1.60 1.70

e 0.95 BSC

K 0.21 --- ---

L 0.30 0.40 0.50 H1 0.05 REF H2 0.40 REF

SOLDERING FOOTPRINT*

0.850

0.0334

0.950

0.0374

64

0.35

0.014

SCALE 10:1

1.700

0.685

ǒ

inches

mm

Ǔ

H1 H2

BOTTOM VIEW

6X

b

0.10

0.05

(NOTE 3)

C AB

C

3.31

0.130

0.63

0.025

1.20

0.0472

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTLGD3502N/D