Datasheet ntk3142p Datasheet

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NTK3142P

Small Signal MOSFET

−20 V, −280 mA, P−Channel with ESD Protection, SOT−723

Features

• Enables High Density PCB Manufacturing

• 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89

• Low Voltage Drive Makes this Device Ideal for Portable Equipment

• Low Threshold Levels, 1.8 V R

• Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin

Environments such as Portable Electronics

• Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels Using the Same Basic Topology.

• This is a Pb−Free Device

DS(on)

Rating

(BR)DSS

−20 V

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TYP ID Max

DS(on)

2.7 W @ −4.5 V

4.1 W @ −2.5 V

6.1 W @ −1.8 V

SOT−723 (3−LEAD)

−280 mA

Applications

• Interfacing, Switching

• High Speed Switching

• Cellular Phones, PDA’s

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) (Note 2) I

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size.

= 25°C unless otherwise stated)

Symbol Value Unit

DSS

Steady

State

t v 5 s TA = 25°C

Steady

State

t v 5 s

Steady

State

TA = 25°C

TA = 85°C

TA = 25°C P

TA = 25°C I

TA = 85°C

TA = 25°C

tp = 10 ms

STG

−20 V

±8.0 V

−260

−185

−280

400

500

−215

−155

280

−310 mA

−55 to

150

−240 mA

260 °C

°C

1 − Gate 2 − Source 3 − Drain

Top View

MARKING DIAGRAM

CASE 631AA

SOT−723

KB = Specific Device Code M = Date Code

KB M

ORDERING INFORMATION

Device Package Shipping

NTK3142PT1G SOT−723

(Pb−Free)

NTK3142PT5G SOT−723

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

4000/Tape & Reel

4 mm Pitch

8000/Tape & Reel

2 mm Pitch

†

November, 2009 − Rev. 2

1 Publication Order Number:

NTK3142P/D

Page 2

NTK3142P

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – t = 5 s (Note 3)

Junction−to−Ambient – Steady State Minimum Pad (Note 4)

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

4. Surface−mounted on FR4 board using the minimum recommended pad size.

315

250

440

°C/W

MOSFET ELECTRICAL CHARACTERISTICS (T

Parameter

Symbol Test Condition Min Ty p Max Unit

= 25°C unless otherwise specified)

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = −100 mA

ID = −100 mA, Reference to 25°C

VGS = 0 V,

VDS = −16 V

VDS = 0 V, VGS = ±5 V $1

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(ON)

VGS = VDS, ID = −250 mA

VGS = −4.5V, ID = −260 mA 2.9 4.0

VGS = −4.5V, ID = −10 mA 2.7 3.4

VGS = −2.5 V, ID = −1 mA 4.1 5.3

VGS = −1.8 V, ID = −1 mA 6.1 10

Forward Transconductance g

VDS = −5 V, ID = −10 mA 73 mS

CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

ISS

OSS

RSS

VGS = 0 V, f = 1 MHz, VDS = −10 V

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = −4.5 V, VDD = −5 V, ID = −100 mA,

= 6 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V, IS= −10 mA

VGS = 0 V, VDD = −20 V,

/dt = 100 A/ms, IS = −1.0 A

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

−20 V

TJ = 25°C −1.0

TJ = 125°C −2.0

−0.4 −1.3 V

−2.0

15.3

4.3

2.3

8.4 16

15.3 28

37.5 80

22.7 43

TJ = 25°C 0.69 −1.2

TJ = 125°C 0.56

37 80

15.9 30

21.1 50

20 70 nC

mV/°C

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Page 3

NTK3142P

TYPICAL PERFORMANCE CURVES

0.4

TJ = 25°C

VGS = −4 V to −10 V

0.4 VDS ≥ −5 V

−3.0 V

0.3

0.2

−2.5 V

0.3

0.2

TJ = 25°C

−2.2 V

0.1

DRAIN CURRENT (AMPS)

−I

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V

Figure 1. On−Region Characteristics

DRAIN−TO−SOURCE RESISTANCE (W)

1.5

−2.0 V

−1.8 V

−1.6 V

−1.4 V

2.5

ID = −0.26 A T

= 25°C

0.1

DRAIN CURRENT (AMPS)

TJ = 150°C

−I

30.5

TJ = −40°C

1.5

2.5

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

DRAIN−TO−SOURCE RESISTANCE (W)

VGS = −2.5 V

VGS = −4.5 V

DS(on),

27593

−V

, GATE−TO−SOURCE VOLTAGE (VOLTS)

8 0.2

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

0 0.30.1

DS(on),

−ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

9.0 VGS = −0.01 V

8.0

7.0

6.0

5.0

4.0

DRAIN−TO−SOURCE

RESISTANCE

3.0

DS(on),

2.0

1.0

−50 0−25 25

Figure 5. On−Resistance Variation with

VGS = −1.8 V

VGS = −2.5 V

VGS = −4.5 V

50 150

TJ, JUNCTION TEMPERATURE (°C)

Temperature

1000

100

, LEAKAGE (nA)

DSS

−I

125100

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VGS = 0 V

TJ = 150°C

TJ = 125°C

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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NTK3142P

TYPICAL PERFORMANCE CURVES

iss

C, CAPACITANCE (pF)

oss

rss

0 2.5 5 7.5 10 12.5 15

−DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

0.3

0.2

VGS = 0 V

TJ = 25°C VGS = 0 V

17.5 20

1000

VDD = −5 V I

= −10 mA

= −4.5 V

100

d(off)

t, TIME (ns)

d(on)

1 10 100

, GATE RESISTANCE (OHMS)

Figure 8. Resistive Switching Time

Variation vs. Gate Resistance

125°CTJ = 150°C 25°C −40°C

0.1

, SOURCE CURRENT (AMPS)

−I

0.4 0.70.5

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−V

Figure 9. Diode Forward Voltage vs. Current

1.0

1.10.6

0.90.8

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Page 5

NTK3142P

PACKAGE DIMENSIONS

SOT−723

CASE 631AA−01

ISSUE D

BOTTOM VIEW

TOP VIEW

−X−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

−Y−

X0.08 Y

SIDE VIEW

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

DIM MIN NOM MAX

A 0.45 0.50 0.55

b 0.15 0.21 0.27

b1 0.25 0.31 0.37

C 0.07 0.12 0.17 D 1.15 1.20 1.25

E 0.75 0.80 0.85 e

H 1.15 1.20 1.25

L2 0.15 0.20 0.25

STYLE 3:

PIN 1. ANODE

2. ANODE

3. CATHODE

0.40 BSC

0.29 REF

RECOMMENDED

SOLDERING FOOTPRINT*

0.40

0.27

PACKAGE

OUTLINE

1.50

0.52

0.36

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTK3142P/D