Datasheet ntk3134n-d Datasheet

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Page 1

NTK3134N

l l

Power MOSFET

20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723

Features

• N channel Switch with Low R

DS(on)

• 44% Smaller Footprint and 38% Thinner than SC89

• Low Threshold Levels Allowing 1.5 V R

DS(on)

Rating

• Operated at Low Logic Level Gate Drive

• These are Pb−Free Devices

Applications

• Load/Power Switching

• Interface Switching

• Logic Level Shift

• Battery Management for Ultra Small Portable Electronics

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V Gate−to−Source Voltage V Continuous Drain

Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

2. Surface mounted on FR4 board using the minimum recommended pad size

= 25°C unless otherwise stated)

DSS

Steady

State

t ≤ 5 s TA = 25°C 990

Steady

State

t ≤ 5 s 550

Steady

State

tp = 10 ms

TA = 25°C TA = 85°C 640

TA = 25°C P

TA = 25°C TA = 85°C 540 TA = 25°C P

TJ, T

STG

± 6 V

890

450

750

310 mW

1.8 A

−55 to 150

260 °C

20 V

°C

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(BR)DSS

20 V

TYP ID Max

DS(on)

0.20 W @ 4.5 V

0.26 W @ 2.5 V

0.42 W @ 1.8 V

0.62 W @ 1.5 V

890 mA 790 mA 700 mA 200 mA

SOT−723 (3−LEAD)

Top View

1 − Gate 2 − Source 3 − Drain

MARKING DIAGRAM

KF M

SOT−723

CASE 631AA

STYLE 5

KF = Specific Device Code M = Date Code

ORDERING INFORMATION

Device Package Shipping

NTK3134NT1G SOT−723* 4000 / Tape & Ree NTK3134NT5G SOT−723* 8000 / Tape & Ree †For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

*These packages are inherently Pb−Free.

†

December, 2006 − Rev. 0

1 Publication Order Number:

NTK3134N/D

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NTK3134N

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 3) R Junction−to−Ambient – t = 5 s (Note 3) R Junction−to−Ambient – Steady State Minimum Pad (Note 4) R

3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

4. Surface mounted on FR4 board using the minimum recommended pad size

280 228 400

°C/W

MOSFET ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 250 mA

ID = 250 mA, Reference to 25°C

VGS = 0 V, VDS = 16 V

VDS = 0 V, VGS = ±4.5 V ±0.5

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V Negative Threshold Temperature

Coefficient Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 4.5 V, ID = 890 mA 0.20 0.35 W VGS = 2.5 V, ID = 780 mA 0.26 0.45 VGS = 1.8 V, ID = 700 mA 0.43 0.65 VGS = 1.5 V, ID = 200 mA 0.56 1.2

Forward Transconductance g

VDS = 10 V, ID = 800 mA 1.6 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

ISS OSS RSS

VGS = 0 V, f = 1 MHz, VDS = 16 V

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn On Delay Time t Rise Time t TurnOff Delay Time t

d(OFF)

Fall Time t

d(ON)

VGS = 4.5 V, VDS = 10 V, ID = 500 mA,

RG = 10 W

DRAIN SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V Reverse Recovery Time t Charge Time t Discharge Time t Reverse Recovery Charge Q

VGS = 0 V, IS = 350 mA TJ = 25°C 0.75 1.2 V

VGS = 0 V, d

IS = 1.0 A, VDD = 20 V

ISD/dt

5. Pulse Test: pulse width = 300 ms, duty cycle = 2%

6. Switching characteristics are independent of operating junction temperatures

20 V

18 mV/°C

TJ = 25°C 1.0 mA

TJ = 125°C 2.0

0.45 1.2 V

2.4 mV/°C

79 120 13 20

9.0 15

6.7

4.8

17.3

7.4

= 100 A/ms,

8.1

6.4

1.7

3.0 nC

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NTK3134N

TYPICAL CHARACTERISTICS

2.0

1.5

1.0

, DRAIN CURRENT (A)

0.5

VGS = 4.5 V to 2.2 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

1.50

1.25

1.00

0.75

TJ = 25°C

2.0 V

1.8 V

1.6 V

1.5 V

1.4 V

4.543.535

ID = 0.89 A

TJ = 25°C

, DRAIN CURRENT (A) I

65.52.521.510.50

0.30

0.28

0.25

0.23

2.0

1.5

1.0

0.5

VDS ≥ 5 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

2.01.751.51.251.00.75

TJ = 25°C

VGS = 2.5 V

0.50

0.25

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

0.6

0.5

0.4

0.3

0.2

, DRAIN−TO−SOURCE RESISTANCE (W)

0.1

DS(on)

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS = 1.5 V, ID = 200 mA

VGS = 1.8 V, ID = 710 mA

VGS = 2.5 V, ID = 710 mA

VGS = 4.5 V, ID = 1 A

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

0.20

0.18

, DRAIN−TO−SOURCE RESISTANCE (W)

0.15

632.521.51

5.554.543.5

DS(on)

VGS = 4.5 V

1.81.61.31.10.80.60.3

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10,000

VGS = 0 V

1000

, LEAKAGE (nA)

100

DSS

11590654015−10−35−60

140

TJ = 150°C

TJ = 125°C

2015105.0

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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NTK3134N

TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

140 120

100

100 VGS = 0 V TJ = 25°C

VDD = 10 V ID = 500 mA VGS = 4.5 V

iss

d(on)

d(off)

RG, GATE RESISTANCE (W)

100101

t, TIME (ns)

oss

rss

20121086420

181614

DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation

vs. Gate Resistance

1.0 VGS = 0 V

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, SOURCE CURRENT (A)

0.2

0.1

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

150°C 125°C

25°C

TJ = −55°C

1.00.90.80.70.60.50.40.3

Figure 9. Diode Forward Voltage vs. Current

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NTK3134N

PACKAGE DIMENSIONS

SOT−723

CASE 631AA−01

ISSUE C

−X−

−Y−

X0.08 (0.0032) Y

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

DIM MIN NOM MAX

A 0.45 0.50 0.55 b 0.15 0.21 0.27

b1 0.25 0.31 0.37

C 0.07 0.12 0.17 D 1.15 1.20 1.25 E 0.75 0.80 0.85 e 0.40 BSC

H 1.15 1.20 1.25

L 0.15 0.20 0.25

STYLE 5:

PIN 1. GATE

2. SOURCE

3. DRAIN

INCHES

MIN NOM MAX

0.018 0.020 0.022

0.0059 0.0083 0.0106

0.010 0.012 0.015

0.0028 0.0047 0.0067

0.045 0.047 0.049

0.03 0.032 0.034

0.016 BSC

0.045 0.047 0.049

0.0059 0.0079 0.0098

0.40

0.0157

0.40

0.0157

1.0

0.039

0.40

0.0157

0.40

0.0157

0.40

0.0157

SCALE 20:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTK3134N/D