Datasheet ntk3043n-d Datasheet

NTK3043N

l
l

Power MOSFET

20 V, 285 mA, N−Channel with ESD
Protection, SOT−723

Features

• Enables High Density PCB Manufacturing

• 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89

• Low Voltage Drive Makes this Device Ideal for Portable Equipment

• Low Threshold Levels, V

• Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin

Environments such as Portable Electronics

• Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels Using the Same Basic Topology

• These are Pb−Free Devices

GS(TH)

< 1.3 V

V

(BR)DSS

20 V

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R

TYP ID Max

DS(on)

1.5 W @ 4.5 V

2.4 W @ 2.5 V

5.1 W @ 1.8 V

6.8 W @ 1.65 V

Top View

285 mA

Applications

• Interfacing, Switching

• High Speed Switching

• Cellular Phones, PDAs

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1)

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 2)

Power Dissipation
(Note 2)

Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) (Note 2) I
Lead Temperature for Soldering Purposes

(1/8” from case for 10 seconds)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size.

= 25°C unless otherwise stated)

J

DSS

GS

Steady

State

t v 5 s TA = 25°C 285
Steady

State

t v 5 s 545

Steady

State

TA = 25°C
TA = 85°C 185

TA = 25°C P

TA = 25°C
TA = 85°C 155
TA = 25°C P

tp = 10 ms

I

D

D

I

D

D

I

DM

STG

S

T

L

20 V
±10 V
255

440

210

310

400 mA

−55 to
150

286 mA
260 °C

mA

mW

mA

mW

°C

3

12

1 − Gate
2 − Source
3 − Drain

MARKING
DIAGRAM

KA

M

SOT−723

CASE 631AA

KA = Device Code
M = Date Code

1

ORDERING INFORMATION

Device Package Shipping

NTK3043NT1G SOT−723* 4000 / Tape & Ree
NTK3043NT5G SOT−723* 8000 / Tape & Ree
†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

*These packages are inherently Pb−Free.

†

© Semiconductor Components Industries, LLC, 2006

April, 2006 − Rev. 3

1 Publication Order Number:

NTK3043N/D

NTK3043N

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Junction−to−Ambient – Steady State Minimum Pad (Note 4)

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

4. Surface−mounted on FR4 board using the minimum recommended pad size.

R

q

JA

R

q

JA

R

q

JA

280
228
400

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

J

Parameter Test Condition Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

VGS = 0 V, ID = 100 mA

ID = 100 mA, Reference to 25°C

V

Temperature Coefficient
Zero Gate Voltage Drain Current VGS = 0 V,

VDS = 16 V

TJ = 25°C

TJ = 125°C 10

Gate−to−Source Leakage Current VDS = 0 V, VGS = ±5 V I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage
Gate Threshold Temperature Coefficient V
Drain−to−Source On Resistance

VGS = VDS, ID = 250 mA

VGS = 4.5V, ID = 10 mA

VGS = 4.5V, ID = 255 mA 1.6 3.8

VGS = 2.5 V, ID = 1 mA 2.4 4.5
VGS = 1.8 V, ID = 1 mA 5.1 10

VGS = 1.65 V, ID = 1 mA 6.8 15

Forward Transconductance VDS = 5 V, ID = 100 mA g

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance
Output Capacitance C

VGS = 0 V, f = 1 MHz, VDS = 10 V

Reverse Transfer Capacitance C

SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4)

Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t

VGS = 4.5 V, VDD = 5 V, ID = 10 mA,

RG = 6 W

Fall Time t

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VGS = 0 V, IS= 286 mA

TJ = 25°C

TJ = 125°C 0.69
Reverse Recovery Time
Charge Time t
Discharge Time t

VGS = 0 V, VDD = 20 V, dISD/dt = 100 A/ms,

IS = 286 mA

Reverse Recovery Charge Q

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

V

(BR)DSS

(BR)DSS/TJ

I

DSS

GSS

V

GS(TH)

GS(TH)/TJ

R

DS(ON)

FS

C

ISS
OSS
RSS

t

d(ON)

r

d(OFF)

f

V

SD

t

RR

a
b

RR

20 V

27

mV/°C

1

1

0.4 1.3 V

−2.4 mV/°C

1.5 3.4

0.275 S

11

8.3

2.7

13
15
94
55

0.83 1.2

9.1

7.1

2.0

3.7 nC

mA

mA

W

pF

ns

V

ns

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2

NTK3043N

R

DRAIN−TO−SOURCE RESISTANCE (

)

0

0.3

.3

0.3

TYPICAL PERFORMANCE CURVES

2.5 V

2.2 V

2.0 V

1.8 V

1.6 V

1.4 V

4

0.2

0.1

DRAIN CURRENT (AMPS)

D,

I

0

0

1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 3 V to 10 V

2

TJ = 25°C

35

Figure 1. On−Region Characteristics

W

5

4

3

2

ID = 0.255 A
TJ = 25°C

VDS ≥ 5 V

0.2

0.1

DRAIN CURRENT (AMPS)

D,

I

0

12

TJ = 25°C

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 125°C

1.5

TJ = −55°C

2.5

Figure 2. Transfer Characteristics

6

5

4

VGS = 2.5 V

3

TJ = 25°C

1

01

16

DS(on),

27593

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

4

8 0.2

10

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

9.0

8.0

7.0

6.0

5.0

4.0

DRAIN−TO−SOURCE

RESISTANCE

3.0

2.0

DS(on),

R

1.0
0

−50 0−25 25

VGS = 1.65 V, ID = 1 mA

VGS = 1.8 V, ID = 10 mA

VGS = 2.5 V, ID = 10 mA

VGS = 4.5 V, ID = 10 mA

50 150

75

TJ, JUNCTION TEMPERATURE (°C)

125100

Figure 5. On−Resistance Variation with

Temperature

2

DRAIN−TO−SOURCE RESISTANCE (W)

00

DS(on),

R

0.1

ID, DRAIN CURRENT (AMPS)

VGS = 4.5 V

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1000

, LEAKAGE (nA)

DSS

I

100

10

VGS = 0 V

TJ = 150°C

TJ = 125°C

1

5

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

10

15

2

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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3

NTK3043N

TYPICAL PERFORMANCE CURVES

25

TJ = 25°C

20

C

iss

C

rss

15

10

C, CAPACITANCE (pF)

5

0

VGS = 0 VVDS = 0 V

10 5 0 5 10 15 20

GS

V

DS

V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

0.4
VGS = 0 V

0.3

1000

VDD = 5 V

= 10 mA

I

D

VGS = 4.5 V

100

C

iss

C

oss

C

rss

t, TIME (ns)

t

d(off)

t

f

t

r

t

d(on)

10

1

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 8. Resistive Switching Time

Variation vs. Gate Resistance

TJ = 25°C

0.2

0.1

, SOURCE CURRENT (AMPS)

S

I

TJ = 150°C

TJ = 125°C

0

0.4 0.70.5
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Diode Forward Voltage vs. Current

TJ = −55°C

0.90.8

1.00.6

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4

b1

NTK3043N

PACKAGE DIMENSIONS

SOT−723

CASE 631AA−01

ISSUE B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

−X−

D

3

1

2

e

−Y−

E

b

2X

X0.08 (0.0032) Y

A

H

L

E

C

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

DIM MIN NOM MAX

A 0.45 0.50 0.55

b 0.15 0.21 0.27

b1 0.25 0.31 0.37

C 0.07 0.12 0.17
D 1.15 1.20 1.25

E 0.75 0.80 0.85
e 0.40 BSC

H 1.15 1.20 1.25

E

L 0.15 0.20 0.25

INCHES

MIN NOM MAX

0.018 0.020 0.022

0.0059 0.0083 0.0106

0.010 0.012 0.015

0.0028 0.0047 0.0067

0.045 0.047 0.049

0.03 0.032 0.034

0.016 BSC

0.045 0.047 0.049

0.0059 0.0079 0.0098

SOLDERING FOOTPRINT*

0.40

0.0157

0.40

0.0157

1.0

0.039

0.40

0.0157

0.40

0.0157

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0.40

0.0157

SCALE 20:1

mm

ǒ

inches

Ǔ

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NTK3043N/D