Datasheet ntjs4405n Datasheet

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Page 1

NTJS4405N

Small Signal MOSFET

25 V, 1.2 A, Single, N−Channel, SC−88

Features

• Advance Planar Technology for Fast Switching, Low R

• Higher Efficiency Extending Battery Life

• Pb−Free Packages are Available

Applications

• Boost and Buck Converter

• Load Switch

• Battery Protection

DS(on)

(BR)DSS

25 V

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Typ ID Max

DS(on)

249 mW @ 4.5 V

299 mW @ 2.7 V

N−Channel

Drain

1256

1.2 A

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Drain Current t < 5 s TA = 25°C I

Continuous Drain Current

(Note 1)

Power Dissipation (Note 1) Steady State P

Power Dissipation (Note 1) t v 5 s P

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) (Note 1) I

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

ESD Rating − Machine Model 25 V

= 25°C unless otherwise noted)

Rating

Steady

State

TA = 25°C

TA = 75°C 0.80

tp = 10 ms

Symbol Value Unit

25 V

"8.0 V

1.2 A

1.0

0.63 W

0.89 W

3.7 A

−55 to +150

0.8 A

260 °C

°C

DSS

STG

THERMAL RESISTANCE RATINGS

Rating Symbol Max Unit

Junction−to−Lead – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient − t v 5 s (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

102

200

140

°C/W

Gate

4Source

MARKING DIAGRAM &

PIN ASSIGNMENT

DDS

SC−88/SOT−363

CASE 419B

TS = Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

TS M G

DDG

ORDERING INFORMATION

Device Package Shipping†

NTJS4405NT1 SC−88 3000 / Tape & Reel

NTJS4405NT1G SC−88

(Pb−Free)

NTJS4405NT4 SC−88

NTJS4405NT4G SC−88

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

3000 / Tape & Reel

10,000 / Tape & Reel

April, 2011 − Rev. 5

1 Publication Order Number:

NTJS4405N/D

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NTJS4405N

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

= 0 V,

= 20 V

= 0 V, V

= 0 V, I

= 250 mA

= 8.0 V 100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature

Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

GS(TH)/TJ

DS(on)

= VDS, ID = 250 mA

= 4.5 V, I

= 2.7 V, I

= 4.5 V, I

= 5.0 V, I

= 0.6 A 249 350

= 0.2 A 299 400

= 1.2 A 260

= 0.5 A 0.5 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= 4.5 V, V

= 0.95 A

= 10 V

= 5.0 V,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

= 4.5 V, V = 0.5 A, R

= 50 W

= 6.0 V,

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

= 0 V,

= 0.6 A

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

25 V

30 mV/°C

= 25°C 1.0 mA

= 125°C 10

0.65 1.5 V

−2.0 mV/°C

49 60

22.4 30

8.0 12

0.75 1.5

0.10

0.30 0.50

0.20 0.40

6.0 12

4.7 8.0

25 35

41 60

= 25°C 0.82 1.20 V

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NTJS4405N

7 V

4.5

6 V

5.5 V

4.5 V

3.5

2.5

1.5

DRAIN CURRENT (AMPS)

0.5

0.5 3.51.5 2.5 4.5

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

1.0 VGS = 4.5 V

0.8

0.6

TYPICAL PERFORMANCE CURVES (T

4 V

3.5 V

VGS = 3 V

VGS = 2.5 V

VGS = 2 V

TJ = 25°C

1.5

0.5

DRAIN CURRENT (AMPS)

0.4

0.3

= 25°C unless otherwise noted)

VDS ≥ 5 V

TJ = −55°C

25°C

0.5

1.5

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

VGS = 2.7 V

TJ = 125°C

21 2.5

TJ = 125°C

0.4

TJ = 25°C

0.2

DRAIN−TO−SOURCE RESISTANCE (W)

TJ = −55°C

0 5.0

DS(on),

1.0 2.0

ID, DRAIN CURRENT (AMPS)

4.03.0

Figure 3. On−Resistance vs. Drain Current and

Temperature

1.8 ID = 0.6 A V

= 4.5 V

1.6

1.4

1.2

DRAIN−TO−SOURCE

DS(on),

0.8

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

75 150

50 125100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

VGS = 4.5 V

0.2

DRAIN−TO−SOURCE RESISTANCE (W)

0.1

0.4 1

0.2 0.6 21.4

DS(on),

DRAIN CURRENT (AMPS)

1.20.8

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

1000

TJ = 150°C

100

LEAKAGE (nA)

DSS,

02515

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 125°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

1.6 1.8

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NTJS4405N

TYPICAL PERFORMANCE CURVES (T

150

VDS = 0 V

125

iss

100

rss

C, CAPACITANCE (pF)

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

Figure 7. Capacitance Variation

1000

VDD = 6.0 V I

= 0.5 A

= 4.5 V

100

t, TIME (ns)

d(off)

d(on)

Figure 9. Resistive Switching Time Variation

VGS = 0 V

rss

100

52515

GSVDS

VOLTAGE (VOLTS)

101

, GATE RESISTANCE (OHMS)

vs. Gate Resistance

TJ = 25°C

iss

oss

20510

= 25°C unless otherwise noted)

VGS = 4.5 V

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

0 0.6

Drain−to−Source Voltage vs. Total Charge

1.2 VGS = 0 V

1.1

TJ = 25°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, SOURCE CURRENT (AMPS)

0.2

0.1

100

Figure 10. Diode Forward Voltage vs. Current

G(TOT)

VDS = 5.0 V

ID = 0.95 A T

= 25°C

0.40.2

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

0.60.4

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

0.8

0.90.70.50.3

0.8

10.2

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NTJS4405N

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

NOTES:

654

123

−E−

6 PL

E0.2 (0.008)

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30

0.20 REF 0.008 REF

2.00 2.10 2.20

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

SCALE 20:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTJS4405N/D